TW200727348A - Polar fluid removal from surfaces using supercritical fluids - Google Patents

Polar fluid removal from surfaces using supercritical fluids

Info

Publication number
TW200727348A
TW200727348A TW095111813A TW95111813A TW200727348A TW 200727348 A TW200727348 A TW 200727348A TW 095111813 A TW095111813 A TW 095111813A TW 95111813 A TW95111813 A TW 95111813A TW 200727348 A TW200727348 A TW 200727348A
Authority
TW
Taiwan
Prior art keywords
fluids
supercritical
devices
removal
supercritical fluids
Prior art date
Application number
TW095111813A
Other languages
English (en)
Inventor
Paul A Farrar
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200727348A publication Critical patent/TW200727348A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
TW095111813A 2005-05-16 2006-04-03 Polar fluid removal from surfaces using supercritical fluids TW200727348A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/130,011 US20060254612A1 (en) 2005-05-16 2005-05-16 Polar fluid removal from surfaces using supercritical fluids

Publications (1)

Publication Number Publication Date
TW200727348A true TW200727348A (en) 2007-07-16

Family

ID=36646118

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111813A TW200727348A (en) 2005-05-16 2006-04-03 Polar fluid removal from surfaces using supercritical fluids

Country Status (7)

Country Link
US (1) US20060254612A1 (zh)
EP (1) EP1886341A1 (zh)
JP (1) JP2008541479A (zh)
KR (1) KR20080027258A (zh)
CN (1) CN101176191A (zh)
TW (1) TW200727348A (zh)
WO (1) WO2006124157A1 (zh)

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DE102006015382A1 (de) * 2006-04-03 2007-10-04 Robert Bosch Gmbh Verfahren zur Behandlung von nanoskalige Poren aufweisendem Material
US20070240740A1 (en) * 2006-04-13 2007-10-18 Mcdermott Wayne T Cleaning of contaminated articles by aqueous supercritical oxidation
US8500913B2 (en) 2007-09-06 2013-08-06 Micron Technology, Inc. Methods for treating surfaces, and methods for removing one or more materials from surfaces
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US8012877B2 (en) * 2008-11-19 2011-09-06 Texas Instruments Incorporated Backside nitride removal to reduce streak defects
JP5235734B2 (ja) * 2009-03-12 2013-07-10 東京エレクトロン株式会社 基板洗浄方法
EP2383771B1 (de) * 2010-04-29 2020-04-22 EV Group GmbH Vorrichtung und Verfahren zum Lösen einer Polymerschicht von einer Oberfläche eines Substrats
JP5985156B2 (ja) * 2011-04-04 2016-09-06 東京エレクトロン株式会社 半導体基板の超臨界乾燥方法及び装置
TWI689004B (zh) * 2012-11-26 2020-03-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
KR101406132B1 (ko) * 2013-05-30 2014-06-13 씨엔비산업주식회사 이산화탄소를 이용한, 식각 및 건조 일원화 장치 및 방법
CN105492382A (zh) * 2013-08-21 2016-04-13 韩化石油化学株式会社 用于改性石墨烯的方法和设备
CN104867844A (zh) * 2014-02-25 2015-08-26 陈柏颖 材料低温优化方法及其装置
CN104979234A (zh) * 2014-04-08 2015-10-14 陈柏颕 反应装置及其方法
US11152221B2 (en) * 2019-02-20 2021-10-19 Applied Materials, Inc. Methods and apparatus for metal silicide deposition
KR20230025563A (ko) * 2021-08-12 2023-02-22 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN115521605A (zh) * 2022-09-29 2022-12-27 五邑大学 多孔介电材料、制备方法及轻质电容式压力传感器

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US4817652A (en) * 1987-03-26 1989-04-04 Regents Of The University Of Minnesota System for surface and fluid cleaning
US4962776A (en) * 1987-03-26 1990-10-16 Regents Of The University Of Minnesota Process for surface and fluid cleaning
JP2663483B2 (ja) * 1988-02-29 1997-10-15 勝 西川 レジストパターン形成方法
US5185296A (en) * 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
MX9603063A (es) * 1994-01-31 1997-05-31 Bausch & Lomb Tratamiento de lentes de contacto con fluido supercritico.
JPH08330266A (ja) * 1995-05-31 1996-12-13 Texas Instr Inc <Ti> 半導体装置等の表面を浄化し、処理する方法
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6077792A (en) * 1997-07-14 2000-06-20 Micron Technology, Inc. Method of forming foamed polymeric material for an integrated circuit
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
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US6228563B1 (en) * 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6858089B2 (en) * 1999-10-29 2005-02-22 Paul P. Castrucci Apparatus and method for semiconductor wafer cleaning
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JP2004335988A (ja) * 2003-03-12 2004-11-25 Nippon Telegr & Teleph Corp <Ntt> 超臨界処理方法及び装置
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Also Published As

Publication number Publication date
EP1886341A1 (en) 2008-02-13
CN101176191A (zh) 2008-05-07
KR20080027258A (ko) 2008-03-26
JP2008541479A (ja) 2008-11-20
WO2006124157A1 (en) 2006-11-23
US20060254612A1 (en) 2006-11-16

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