TW200727342A - A plasma enhanced atomic layrer deposition system - Google Patents
A plasma enhanced atomic layrer deposition systemInfo
- Publication number
- TW200727342A TW200727342A TW095108981A TW95108981A TW200727342A TW 200727342 A TW200727342 A TW 200727342A TW 095108981 A TW095108981 A TW 095108981A TW 95108981 A TW95108981 A TW 95108981A TW 200727342 A TW200727342 A TW 200727342A
- Authority
- TW
- Taiwan
- Prior art keywords
- processing chamber
- process material
- chamber
- plasma enhanced
- processing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/090,256 US7651568B2 (en) | 2005-03-28 | 2005-03-28 | Plasma enhanced atomic layer deposition system |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200727342A true TW200727342A (en) | 2007-07-16 |
Family
ID=37033920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095108981A TW200727342A (en) | 2005-03-28 | 2006-03-16 | A plasma enhanced atomic layrer deposition system |
Country Status (3)
Country | Link |
---|---|
US (1) | US7651568B2 (zh) |
TW (1) | TW200727342A (zh) |
WO (1) | WO2006104863A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI601845B (zh) * | 2015-08-31 | 2017-10-11 | 精微超科技公司 | 具有旋轉反應器管之電漿增強型原子層沈積系統 |
TWI813223B (zh) * | 2021-03-26 | 2023-08-21 | 美商應用材料股份有限公司 | 熱噴淋頭 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100776843B1 (ko) * | 2001-02-09 | 2007-11-16 | 동경 엘렉트론 주식회사 | 성막 장치 및 Ti막 성막 장치 |
JP4943669B2 (ja) * | 2005-06-08 | 2012-05-30 | 東京エレクトロン株式会社 | 真空装置のシール構造 |
EP2487441A3 (en) * | 2005-07-21 | 2012-11-21 | Hard Technologies Pty Ltd | Duplex surface treatment of metal objects |
JP4997842B2 (ja) * | 2005-10-18 | 2012-08-08 | 東京エレクトロン株式会社 | 処理装置 |
KR100849929B1 (ko) * | 2006-09-16 | 2008-08-26 | 주식회사 피에조닉스 | 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치 |
US7829158B2 (en) * | 2007-05-07 | 2010-11-09 | Tokyo Electron Limited | Method for depositing a barrier layer on a low dielectric constant material |
JP5308679B2 (ja) * | 2008-01-22 | 2013-10-09 | 東京エレクトロン株式会社 | シール機構、シール溝、シール部材及び基板処理装置 |
TWI494030B (zh) * | 2008-07-07 | 2015-07-21 | Lam Res Corp | 供使用於電漿處理腔室中之含真空間隙的面向電漿之探針裝置 |
WO2010005933A2 (en) | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber |
US20110065287A1 (en) * | 2009-09-11 | 2011-03-17 | Tokyo Electron Limited | Pulsed chemical vapor deposition of metal-silicon-containing films |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
US8580693B2 (en) * | 2010-08-27 | 2013-11-12 | Applied Materials, Inc. | Temperature enhanced electrostatic chucking in plasma processing apparatus |
US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
KR101253908B1 (ko) * | 2011-06-02 | 2013-04-16 | 주식회사 케이씨텍 | 원자층 증착장치의 8분기 샤워헤드 모듈 |
US9017481B1 (en) * | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
JP6054695B2 (ja) * | 2011-11-25 | 2016-12-27 | 東京エレクトロン株式会社 | 成膜装置 |
CN102677022B (zh) * | 2012-01-04 | 2014-12-24 | 北京印刷学院 | 一种原子层沉积装置 |
JP2013182961A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
WO2014143903A1 (en) * | 2013-03-15 | 2014-09-18 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and a gasket for use therein |
TWI627305B (zh) * | 2013-03-15 | 2018-06-21 | 應用材料股份有限公司 | 用於轉盤處理室之具有剛性板的大氣蓋 |
US9478438B2 (en) * | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
JP5800969B1 (ja) * | 2014-08-27 | 2015-10-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム、記録媒体 |
JP5916909B1 (ja) * | 2015-02-06 | 2016-05-11 | 株式会社日立国際電気 | 基板処理装置、ガス整流部、半導体装置の製造方法およびプログラム |
US9963782B2 (en) * | 2015-02-12 | 2018-05-08 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US10253412B2 (en) * | 2015-05-22 | 2019-04-09 | Lam Research Corporation | Deposition apparatus including edge plenum showerhead assembly |
WO2017070634A1 (en) * | 2015-10-23 | 2017-04-27 | Applied Materials, Inc. | Methods for spatial metal atomic layer deposition |
KR20170048787A (ko) * | 2015-10-27 | 2017-05-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP6570993B2 (ja) * | 2015-12-16 | 2019-09-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR20190092154A (ko) * | 2018-01-30 | 2019-08-07 | 삼성전자주식회사 | 반도체 설비의 실링 장치 및 기류 산포 제어 장치 |
FI4013905T3 (fi) | 2019-08-12 | 2023-05-19 | Kurt J Lesker Company | Erittäin puhtaat olosuhteet atomimittakaavan prosessointiin |
US20210066051A1 (en) * | 2019-08-28 | 2021-03-04 | Applied Materials, Inc. | High conductance lower shield for process chamber |
USD931241S1 (en) | 2019-08-28 | 2021-09-21 | Applied Materials, Inc. | Lower shield for a substrate processing chamber |
DE102020112568A1 (de) | 2020-02-14 | 2021-08-19 | AIXTRON Ltd. | Gaseinlassorgan für einen CVD-Reaktor |
US20230253189A1 (en) * | 2020-07-13 | 2023-08-10 | Lam Research Corporation | Seal venting in a substrate processing chamber |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3672207A (en) * | 1971-01-04 | 1972-06-27 | North American Rockwell | Apparatus for verifying hermeticity of small electronic assemblies |
KR0171600B1 (ko) * | 1990-02-26 | 1999-03-30 | 이노우에 아끼라 | 밀봉장치 |
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
US5735960A (en) * | 1996-04-02 | 1998-04-07 | Micron Technology, Inc. | Apparatus and method to increase gas residence time in a reactor |
US5997963A (en) * | 1998-05-05 | 1999-12-07 | Ultratech Stepper, Inc. | Microchamber |
US6232248B1 (en) * | 1998-07-03 | 2001-05-15 | Tokyo Electron Limited | Single-substrate-heat-processing method for performing reformation and crystallization |
KR100596822B1 (ko) * | 1999-03-30 | 2006-07-03 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치, 그 보수 방법 및 그 시공 방법 |
KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
US6962348B2 (en) * | 2002-07-29 | 2005-11-08 | Tokyo Electron Limited | Sealing apparatus having a single groove |
US20040082251A1 (en) * | 2002-10-29 | 2004-04-29 | Applied Materials, Inc. | Apparatus for adjustable gas distribution for semiconductor substrate processing |
-
2005
- 2005-03-28 US US11/090,256 patent/US7651568B2/en not_active Expired - Fee Related
-
2006
- 2006-03-16 TW TW095108981A patent/TW200727342A/zh unknown
- 2006-03-22 WO PCT/US2006/010682 patent/WO2006104863A2/en active Application Filing
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI601845B (zh) * | 2015-08-31 | 2017-10-11 | 精微超科技公司 | 具有旋轉反應器管之電漿增強型原子層沈積系統 |
TWI813223B (zh) * | 2021-03-26 | 2023-08-21 | 美商應用材料股份有限公司 | 熱噴淋頭 |
US11946140B2 (en) | 2021-03-26 | 2024-04-02 | Applied Materials, Inc. | Hot showerhead |
Also Published As
Publication number | Publication date |
---|---|
WO2006104863A2 (en) | 2006-10-05 |
US20060213438A1 (en) | 2006-09-28 |
WO2006104863A3 (en) | 2007-10-04 |
US7651568B2 (en) | 2010-01-26 |
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