TW200726573A - Method of manufacturing chemical mechanical polishing pad - Google Patents

Method of manufacturing chemical mechanical polishing pad

Info

Publication number
TW200726573A
TW200726573A TW095134332A TW95134332A TW200726573A TW 200726573 A TW200726573 A TW 200726573A TW 095134332 A TW095134332 A TW 095134332A TW 95134332 A TW95134332 A TW 95134332A TW 200726573 A TW200726573 A TW 200726573A
Authority
TW
Taiwan
Prior art keywords
group
chemical mechanical
mechanical polishing
polishing pad
forming
Prior art date
Application number
TW095134332A
Other languages
English (en)
Inventor
Yukio Hosaka
Hiroyuki Tano
Hideki Nishimura
Hiroshi Shiho
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200726573A publication Critical patent/TW200726573A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Milling Processes (AREA)
  • Machine Tool Units (AREA)
TW095134332A 2005-09-16 2006-09-15 Method of manufacturing chemical mechanical polishing pad TW200726573A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005270688A JP2007081322A (ja) 2005-09-16 2005-09-16 化学機械研磨パッドの製造方法

Publications (1)

Publication Number Publication Date
TW200726573A true TW200726573A (en) 2007-07-16

Family

ID=37591729

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095134332A TW200726573A (en) 2005-09-16 2006-09-15 Method of manufacturing chemical mechanical polishing pad

Country Status (6)

Country Link
EP (1) EP1764189B1 (zh)
JP (1) JP2007081322A (zh)
KR (1) KR101248641B1 (zh)
CN (1) CN1970232B (zh)
DE (1) DE602006006512D1 (zh)
TW (1) TW200726573A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
TWI774770B (zh) * 2017-06-14 2022-08-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 梯形cmp溝槽圖案
TWI799413B (zh) * 2017-06-14 2023-04-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 偏置脈衝cmp溝槽圖案

Families Citing this family (20)

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JP2009289925A (ja) * 2008-05-28 2009-12-10 Sumco Corp 半導体ウェーハの研削方法、研削用定盤および研削装置
JP5596030B2 (ja) 2008-06-26 2014-09-24 スリーエム イノベイティブ プロパティズ カンパニー 多孔質エレメントを有する研磨パッド及びその製造方法と使用方法
KR20110033277A (ko) * 2008-07-18 2011-03-30 쓰리엠 이노베이티브 프로퍼티즈 캄파니 플로팅 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법과 이용 방법
SG181678A1 (en) 2009-12-30 2012-07-30 3M Innovative Properties Co Polishing pads including phase-separated polymer blend and method of making and using the same
JP5706178B2 (ja) * 2010-02-05 2015-04-22 株式会社クラレ 研磨パッド
US8709114B2 (en) * 2012-03-22 2014-04-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing chemical mechanical polishing layers
US9034063B2 (en) * 2012-09-27 2015-05-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing grooved chemical mechanical polishing layers
CN102922414B (zh) * 2012-10-18 2016-12-21 上海华虹宏力半导体制造有限公司 化学机械抛光装置
JP6545261B2 (ja) * 2014-10-17 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 付加製造プロセスを使用する、複合材料特性を有するｃｍｐパッド構造
US10875146B2 (en) * 2016-03-24 2020-12-29 Rohm And Haas Electronic Materials Cmp Holdings Debris-removal groove for CMP polishing pad
US10586708B2 (en) * 2017-06-14 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Uniform CMP polishing method
US10857647B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
US10861702B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
KR102059647B1 (ko) * 2018-06-21 2019-12-26 에스케이씨 주식회사 슬러리 유동성이 향상된 연마패드 및 이의 제조방법
CN110707007A (zh) * 2019-09-26 2020-01-17 芜湖德锐电子技术有限公司 一种芯片抛光方法
WO2021090122A1 (en) * 2019-11-04 2021-05-14 3M Innovative Properties Company Polishing article, polishing system and method of polishing
KR102570825B1 (ko) * 2020-07-16 2023-08-28 한국생산기술연구원 다공성 돌출 패턴을 포함하는 연마 패드 및 이를 포함하는 연마 장치
CN114310656B (zh) * 2020-09-29 2024-03-08 Sk恩普士有限公司 抛光垫、抛光垫的制造方法及半导体器件的制造方法
KR102502516B1 (ko) * 2021-03-12 2023-02-23 에스케이엔펄스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
CN114833384B (zh) * 2022-05-27 2023-09-12 西北机器有限公司 一种双螺旋槽的加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08197434A (ja) * 1995-01-23 1996-08-06 Sony Corp 研磨用パッド
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6001001A (en) * 1997-06-10 1999-12-14 Texas Instruments Incorporated Apparatus and method for chemical mechanical polishing of a wafer
JPH11156699A (ja) * 1997-11-25 1999-06-15 Speedfam Co Ltd 平面研磨用パッド
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
DE60039054D1 (de) * 1999-03-30 2008-07-10 Nikon Corp Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23)
JP2000286218A (ja) * 1999-03-30 2000-10-13 Nikon Corp 研磨部材、研磨装置及び研磨方法
US6217426B1 (en) * 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
JP2001071256A (ja) * 1999-08-31 2001-03-21 Shinozaki Seisakusho:Kk 研磨パッドの溝形成方法及び装置並びに研磨パッド
WO2001098027A1 (en) * 2000-06-19 2001-12-27 Struers A/S A multi-zone grinding and/or polishing sheet
SG131737A1 (en) * 2001-03-28 2007-05-28 Disco Corp Polishing tool and polishing method and apparatus using same
JP3955066B2 (ja) * 2002-04-03 2007-08-08 東邦エンジニアリング株式会社 研磨パッドと該研磨パッドの製造方法および該研磨パッドを用いた半導体基板の製造方法
US7377840B2 (en) * 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
JP4393780B2 (ja) * 2003-03-28 2010-01-06 三菱マテリアルテクノ株式会社 溝加工装置
DE10356669A1 (de) * 2003-12-04 2004-06-09 Wacker Siltronic Ag Werkzeug mit linearem Verschleißverhalten zur materialabtragenden Bearbeitung von scheibenförmigen Werkstücken
JP4645825B2 (ja) * 2004-05-20 2011-03-09 Ｊｓｒ株式会社 化学機械研磨パッド及び化学機械研磨方法
US20050260929A1 (en) * 2004-05-20 2005-11-24 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing method
EP1848569B1 (en) * 2005-02-18 2016-11-23 NexPlanar Corporation Customized polishing pads for cmp and method of using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
TWI561341B (en) * 2011-01-26 2016-12-11 Nexplanar Corp Polishing pad with concentric or approximately concentric polygon groove pattern
TWI774770B (zh) * 2017-06-14 2022-08-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 梯形cmp溝槽圖案
TWI799413B (zh) * 2017-06-14 2023-04-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 偏置脈衝cmp溝槽圖案

Also Published As

Publication number Publication date
JP2007081322A (ja) 2007-03-29
KR101248641B1 (ko) 2013-03-28
CN1970232B (zh) 2010-09-29
EP1764189A1 (en) 2007-03-21
EP1764189B1 (en) 2009-04-29
KR20070032236A (ko) 2007-03-21
CN1970232A (zh) 2007-05-30
DE602006006512D1 (de) 2009-06-10

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