TW200725922A - Solar cell - Google Patents

Solar cell

Info

Publication number
TW200725922A
TW200725922A TW095137824A TW95137824A TW200725922A TW 200725922 A TW200725922 A TW 200725922A TW 095137824 A TW095137824 A TW 095137824A TW 95137824 A TW95137824 A TW 95137824A TW 200725922 A TW200725922 A TW 200725922A
Authority
TW
Taiwan
Prior art keywords
solar cell
silicon
aluminum
spikes
consequently
Prior art date
Application number
TW095137824A
Other languages
English (en)
Inventor
Takeshi Akatsuka
Shunichi Igarashi
Original Assignee
Naoetsu Electronics Co Ltd
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Naoetsu Electronics Co Ltd, Shinetsu Chemical Co filed Critical Naoetsu Electronics Co Ltd
Publication of TW200725922A publication Critical patent/TW200725922A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
TW095137824A 2005-12-28 2006-10-13 Solar cell TW200725922A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005378053A JP2009087957A (ja) 2005-12-28 2005-12-28 太陽電池

Publications (1)

Publication Number Publication Date
TW200725922A true TW200725922A (en) 2007-07-01

Family

ID=38228015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137824A TW200725922A (en) 2005-12-28 2006-10-13 Solar cell

Country Status (3)

Country Link
JP (1) JP2009087957A (zh)
TW (1) TW200725922A (zh)
WO (1) WO2007077655A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603344B (zh) * 2013-04-04 2017-10-21 Namics Corp Conductive paste for electrode formation, solar cell manufacturing method, and solar cell

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7976734B2 (en) * 2008-09-10 2011-07-12 E.I. Du Pont De Nemours And Company Solar cell electrodes
WO2010124161A1 (en) * 2009-04-23 2010-10-28 E. I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces
KR101225978B1 (ko) * 2009-06-25 2013-01-24 엘지전자 주식회사 태양전지 및 그 제조방법
KR101814014B1 (ko) 2011-03-25 2018-01-03 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
KR102100291B1 (ko) 2011-11-11 2020-04-13 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
KR101985929B1 (ko) 2011-12-09 2019-06-05 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
AT512041B1 (de) * 2012-05-04 2013-05-15 Mikroelektronik Ges Mit Beschraenkter Haftung Ab Verfahren zur Herstellung eines metallisierten Substrats
US20140158192A1 (en) * 2012-12-06 2014-06-12 Michael Cudzinovic Seed layer for solar cell conductive contact
ES2684721T3 (es) * 2013-04-02 2018-10-04 Heraeus Deutschland GmbH & Co. KG Partículas que comprenden AI, Si y Mg en pastas electroconductoras y preparación de células fotovoltaicas
US11222878B2 (en) 2019-04-30 2022-01-11 Ab Mikroelektronik Gesellschaft Mit Beschraenkter Haftung Electronic power module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293451A (en) * 1978-06-08 1981-10-06 Bernd Ross Screenable contact structure and method for semiconductor devices
JPS5555563A (en) * 1978-10-19 1980-04-23 Matsushita Electric Ind Co Ltd Electrode material for semiconductor device
JPH09283781A (ja) * 1996-04-09 1997-10-31 Sanyo Electric Co Ltd 光起電力装置
JP2005135942A (ja) * 2003-10-28 2005-05-26 Canon Inc 電極配設方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603344B (zh) * 2013-04-04 2017-10-21 Namics Corp Conductive paste for electrode formation, solar cell manufacturing method, and solar cell

Also Published As

Publication number Publication date
WO2007077655A1 (ja) 2007-07-12
JP2009087957A (ja) 2009-04-23

Similar Documents

Publication Publication Date Title
TW200725922A (en) Solar cell
TW200633165A (en) Semiconductor package structure having enhanced thermal dissipation characteristics
US20070007614A1 (en) Schottky diode with improved surge capability
CN104064591A (zh) 半导体装置
TWI268595B (en) Damascene structure and process at semiconductor substrate level
TW200729491A (en) Silicon carbide semiconductor device and method for producing the same
EP1256985A3 (en) Lateral power MISFET
EP1638147A3 (en) III-V nitride semiconductor device and method for fabricating the same
TW430950B (en) Semiconductor device having reduced effective substrate resistivity and associated methods
EP1630883A3 (en) Molecular photovoltaics
EP0712160A3 (en) Improvements in or relating to semiconductor devices
EP2434534A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
GB2378040A (en) Use of AIN as copper passivation layer and thermal conductor
EP1313147A3 (en) Power MOSFET device
EP1675175A3 (en) Wired circuit board
TW200605280A (en) Semiconductor device
EP1104025A4 (en) SEMICONDUCTOR DEVICE
TW200608572A (en) Semiconductor device
WO2003105274A3 (en) INTEGRATED HIGH GAIN ANTENNA AND ASSOCIATED DEVICES
TW200633188A (en) Methods and structures for electrical communication with an overlying electrode for a semiconductor element
EP1317000A3 (en) Semiconductor device having leadless package structure
TWI256734B (en) Low temperature nitridation of amorphous high-k metal-oxide in inter-gates insulator stack
CN102439713A (zh) 具有电隔离背表面的凸点自隔离的GaN晶体管芯片
TW200511346A (en) Solid electrolytic capacitor
TW200409355A (en) Chip-scale schottky device