TW200724633A - Polishing slurries and methods for utilizing same - Google Patents
Polishing slurries and methods for utilizing sameInfo
- Publication number
- TW200724633A TW200724633A TW095136293A TW95136293A TW200724633A TW 200724633 A TW200724633 A TW 200724633A TW 095136293 A TW095136293 A TW 095136293A TW 95136293 A TW95136293 A TW 95136293A TW 200724633 A TW200724633 A TW 200724633A
- Authority
- TW
- Taiwan
- Prior art keywords
- abrasive particles
- methods
- polishing slurries
- utilizing same
- particles
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000002002 slurry Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000002245 particle Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72227005P | 2005-09-30 | 2005-09-30 | |
US75555405P | 2005-12-30 | 2005-12-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200724633A true TW200724633A (en) | 2007-07-01 |
Family
ID=37499367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095136293A TW200724633A (en) | 2005-09-30 | 2006-09-29 | Polishing slurries and methods for utilizing same |
Country Status (11)
Country | Link |
---|---|
US (1) | US8105135B2 (zh) |
EP (1) | EP1928966A2 (zh) |
JP (1) | JP2009509784A (zh) |
KR (1) | KR101022982B1 (zh) |
AU (1) | AU2006297240B2 (zh) |
BR (1) | BRPI0616706A2 (zh) |
CA (1) | CA2624246A1 (zh) |
IL (1) | IL190409A0 (zh) |
NO (1) | NO20082052L (zh) |
TW (1) | TW200724633A (zh) |
WO (1) | WO2007041199A2 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2700408A1 (en) * | 2007-10-05 | 2009-04-09 | Saint-Gobain Ceramics & Plastics, Inc. | Improved silicon carbide particles, methods of fabrication, and methods using same |
EP2215175A1 (en) | 2007-10-05 | 2010-08-11 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
US20100062287A1 (en) * | 2008-09-10 | 2010-03-11 | Seagate Technology Llc | Method of polishing amorphous/crystalline glass to achieve a low rq & wq |
US9567492B2 (en) * | 2014-08-28 | 2017-02-14 | Sinmat, Inc. | Polishing of hard substrates with soft-core composite particles |
JP6756460B2 (ja) * | 2014-12-26 | 2020-09-16 | 株式会社フジミインコーポレーテッド | 研磨方法及びセラミック製部品の製造方法 |
JP2017002166A (ja) | 2015-06-09 | 2017-01-05 | テイカ株式会社 | ガラス及びセラミック研磨用組成物 |
JP6694745B2 (ja) * | 2016-03-31 | 2020-05-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US11078380B2 (en) | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
GB2584372B (en) * | 2018-02-22 | 2022-04-13 | Massachusetts Inst Technology | Method of reducing semiconductor substrate surface unevenness |
US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60172465A (ja) | 1984-02-20 | 1985-09-05 | Nec Corp | 高密度磁気デイスク基板の研磨方法 |
US5086021A (en) * | 1990-06-28 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Dielectric composition |
US5102769A (en) * | 1991-02-04 | 1992-04-07 | Xerox Corporation | Solution coated carrier particles |
US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
US5441549A (en) * | 1993-04-19 | 1995-08-15 | Minnesota Mining And Manufacturing Company | Abrasive articles comprising a grinding aid dispersed in a polymeric blend binder |
US5487965A (en) * | 1994-09-06 | 1996-01-30 | Xerox Corporation | Processes for the preparation of developer compositions |
US5521046A (en) * | 1995-03-13 | 1996-05-28 | Olin Corporation | Liquid colored toner compositions with fumed silica |
US5837436A (en) * | 1995-07-28 | 1998-11-17 | Fuji Photo Film Co., Ltd. | Silver halide color photographic material and package thereof |
US5935772A (en) * | 1995-11-21 | 1999-08-10 | Fuji Photo Film Co., Ltd. | Silver halide photographic light-sensitive material and package thereof |
GB2311996A (en) * | 1996-04-12 | 1997-10-15 | Reckitt & Colman Inc | Hard surface scouring cleansers ` |
DE69806337T2 (de) | 1998-03-05 | 2003-06-05 | Piguet Frederic Sa | Kalendermechanismus für Uhrwerk |
KR100581649B1 (ko) | 1998-06-10 | 2006-05-23 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 금속 cmp에서 광택화를 위한 조성물 및 방법 |
US6818153B2 (en) * | 1998-10-13 | 2004-11-16 | Peter Burnell-Jones | Photocurable thermosetting luminescent resins |
JP2000336344A (ja) * | 1999-03-23 | 2000-12-05 | Seimi Chem Co Ltd | 研磨剤 |
JP4151179B2 (ja) | 1999-11-22 | 2008-09-17 | Jsr株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
US20020039839A1 (en) * | 1999-12-14 | 2002-04-04 | Thomas Terence M. | Polishing compositions for noble metals |
AU2001288212A1 (en) * | 2000-09-08 | 2002-03-22 | 3M Innovative Properties Company | Abrasive sheet, method of manufacturing the same and method to abrade a fiber optic connector |
EP1332194B1 (en) * | 2000-10-06 | 2007-01-03 | 3M Innovative Properties Company | Ceramic aggregate particles |
CA2423597A1 (en) * | 2000-10-16 | 2002-04-25 | 3M Innovative Properties Company | Method of making ceramic aggregate particles |
TWI292780B (zh) | 2000-12-12 | 2008-01-21 | Showa Denko Kk | |
US20040011991A1 (en) | 2001-06-13 | 2004-01-22 | Markle Richard J. | Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor |
MY144587A (en) * | 2001-06-21 | 2011-10-14 | Kao Corp | Polishing composition |
JP3895949B2 (ja) * | 2001-07-18 | 2007-03-22 | 株式会社東芝 | Cmp用スラリー、およびこれを用いた半導体装置の製造方法 |
US20030092271A1 (en) * | 2001-09-13 | 2003-05-15 | Nyacol Nano Technologies, Inc. | Shallow trench isolation polishing using mixed abrasive slurries |
US20030211747A1 (en) | 2001-09-13 | 2003-11-13 | Nyacol Nano Technologies, Inc | Shallow trench isolation polishing using mixed abrasive slurries |
US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
US20030171078A1 (en) * | 2002-03-06 | 2003-09-11 | Fuji Photo Film Co., Ltd. | Polishing member and method for polishing end faces of optical fibers |
US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
JP2004200268A (ja) * | 2002-12-17 | 2004-07-15 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US6896591B2 (en) | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
JP2004247605A (ja) | 2003-02-14 | 2004-09-02 | Toshiba Corp | Cmp用スラリーおよび半導体装置の製造方法 |
US20040216388A1 (en) * | 2003-03-17 | 2004-11-04 | Sharad Mathur | Slurry compositions for use in a chemical-mechanical planarization process |
JP4322035B2 (ja) | 2003-04-03 | 2009-08-26 | ニッタ・ハース株式会社 | 半導体基板用研磨組成物及びこれを用いた半導体基板研磨方法 |
US20050056810A1 (en) | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
JP2005236275A (ja) | 2004-01-23 | 2005-09-02 | Jsr Corp | 化学機械研磨用水系分散体および化学機械研磨方法 |
JP4433918B2 (ja) * | 2004-07-15 | 2010-03-17 | コニカミノルタエムジー株式会社 | 画像形成方法 |
US20060065989A1 (en) * | 2004-09-29 | 2006-03-30 | Thad Druffel | Lens forming systems and methods |
-
2006
- 2006-09-29 JP JP2008533597A patent/JP2009509784A/ja not_active Ceased
- 2006-09-29 EP EP06815657A patent/EP1928966A2/en not_active Withdrawn
- 2006-09-29 AU AU2006297240A patent/AU2006297240B2/en not_active Ceased
- 2006-09-29 BR BRPI0616706-3A patent/BRPI0616706A2/pt not_active IP Right Cessation
- 2006-09-29 CA CA002624246A patent/CA2624246A1/en not_active Abandoned
- 2006-09-29 US US11/541,431 patent/US8105135B2/en active Active
- 2006-09-29 TW TW095136293A patent/TW200724633A/zh unknown
- 2006-09-29 KR KR1020087010126A patent/KR101022982B1/ko active IP Right Grant
- 2006-09-29 WO PCT/US2006/037825 patent/WO2007041199A2/en active Application Filing
-
2008
- 2008-03-24 IL IL190409A patent/IL190409A0/en unknown
- 2008-04-29 NO NO20082052A patent/NO20082052L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR101022982B1 (ko) | 2011-03-18 |
US20070087667A1 (en) | 2007-04-19 |
BRPI0616706A2 (pt) | 2011-06-28 |
US8105135B2 (en) | 2012-01-31 |
NO20082052L (no) | 2008-04-29 |
KR20080059606A (ko) | 2008-06-30 |
JP2009509784A (ja) | 2009-03-12 |
WO2007041199A3 (en) | 2007-06-28 |
EP1928966A2 (en) | 2008-06-11 |
AU2006297240A1 (en) | 2007-04-12 |
AU2006297240B2 (en) | 2009-04-09 |
CA2624246A1 (en) | 2007-04-12 |
WO2007041199A2 (en) | 2007-04-12 |
IL190409A0 (en) | 2008-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200724633A (en) | Polishing slurries and methods for utilizing same | |
HUP0500174A2 (hu) | Új szerkezetű abrazív tárgyak és csiszolási eljárások | |
BR0310025A (pt) | Abrasivos revestidos aperfeiçoados | |
WO2009046311A3 (en) | Composite slurries of nano silicon carbide and alumina | |
TW200718647A (en) | Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same | |
TW200635704A (en) | Composition and method for polishing a sapphire surface | |
WO2006039413A3 (en) | Cmp pade dresser with oriented particles and associated methods | |
WO2004083328A3 (en) | Slurry compositions for use in a chemical-mechanical planarization process having non-spherical abrasive particles | |
SG163546A1 (en) | Use of cmp for aluminum mirror and solar cell fabrication | |
MY146929A (en) | Polishing pad | |
MY126717A (en) | Cmp composition containing silane modified abrasive particles. | |
WO2008149864A1 (ja) | ガラス基板の研磨方法 | |
TW200724657A (en) | Abrasive particulate material, and method of planarizing a workpiece using the abrasive particulate material | |
TW200734441A (en) | Compositions and methods for CMP of indium tin oxide surfaces | |
DE60208818D1 (de) | Mahl-verfahren mit kubischen malhkörpern | |
MX2009007825A (es) | Productos abrasivos recubiertos que contienen agregados. | |
TW200715394A (en) | Polishing slurry, method of treating surface of GaxIN1-xAsyR1-y crystal and GaxIn1-xAsyR1-y crystal substrate | |
EP1302522A3 (en) | Gel-free colloidal abrasive and polishing compositions and methods of using them | |
TW200613532A (en) | Composition for polishing semiconductor | |
TW200714414A (en) | Polishing pad and method for manufacturing polishing pads | |
TW200738856A (en) | Polishing composition and polishing method | |
IL179570A0 (en) | Cmp composition for improved oxide removal rate | |
TW200716730A (en) | Polishing composition and polishing method | |
TW200740973A (en) | Adjuvant for CMP slurry | |
TW200734120A (en) | Polishing grindstone and method for producing same |