TW200723367A - Supporting structure for a heating element, insulating structure, heating device and substrate processing apparatus - Google Patents

Supporting structure for a heating element, insulating structure, heating device and substrate processing apparatus

Info

Publication number
TW200723367A
TW200723367A TW095111194A TW95111194A TW200723367A TW 200723367 A TW200723367 A TW 200723367A TW 095111194 A TW095111194 A TW 095111194A TW 95111194 A TW95111194 A TW 95111194A TW 200723367 A TW200723367 A TW 200723367A
Authority
TW
Taiwan
Prior art keywords
heating element
power feed
feed portions
heating
heat insulating
Prior art date
Application number
TW095111194A
Other languages
English (en)
Other versions
TWI308364B (en
Inventor
Hitoshi Murata
Shinobu Sugiura
Tetsuya Kosugi
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW200723367A publication Critical patent/TW200723367A/zh
Application granted granted Critical
Publication of TWI308364B publication Critical patent/TWI308364B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW095111194A 2005-09-26 2006-03-30 Supporting structure for a heating element, insulating structure, heating device and substrate processing apparatus TWI308364B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005277207A JP4820137B2 (ja) 2005-09-26 2005-09-26 発熱体の保持構造体

Publications (2)

Publication Number Publication Date
TW200723367A true TW200723367A (en) 2007-06-16
TWI308364B TWI308364B (en) 2009-04-01

Family

ID=37959297

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111194A TWI308364B (en) 2005-09-26 2006-03-30 Supporting structure for a heating element, insulating structure, heating device and substrate processing apparatus

Country Status (4)

Country Link
JP (1) JP4820137B2 (zh)
KR (2) KR100742451B1 (zh)
CN (2) CN100452291C (zh)
TW (1) TWI308364B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4331768B2 (ja) * 2007-02-28 2009-09-16 東京エレクトロン株式会社 熱処理炉及び縦型熱処理装置
US8395096B2 (en) 2009-02-05 2013-03-12 Sandvik Thermal Process, Inc. Precision strip heating element
JP5529646B2 (ja) * 2010-06-25 2014-06-25 株式会社日立国際電気 加熱装置、基板処理装置、基板処理方法及び半導体装置の製造方法
DE202009011719U1 (de) * 2009-08-28 2010-10-21 Eugen Forschner Gmbh Einrichtung zur Kontaktierung eines beheizbaren Schlauchs
JP5565188B2 (ja) * 2010-08-10 2014-08-06 東京エレクトロン株式会社 ヒータ装置
JP5686467B2 (ja) * 2010-10-15 2015-03-18 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5802052B2 (ja) * 2011-05-19 2015-10-28 株式会社ニューフレアテクノロジー 半導体製造装置及び半導体製造方法
JP5743746B2 (ja) 2011-06-27 2015-07-01 東京エレクトロン株式会社 熱処理炉及び熱処理装置
CN103484934A (zh) * 2012-06-11 2014-01-01 绿种子材料科技股份有限公司 气相沉积装置及其加热系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506389A (en) * 1993-11-10 1996-04-09 Tokyo Electron Kabushiki Kaisha Thermal processing furnace and fabrication method thereof
JPH07253276A (ja) * 1994-03-16 1995-10-03 Tokyo Electron Ltd 熱処理炉及びその製造方法
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
KR100682190B1 (ko) * 1999-09-07 2007-02-12 동경 엘렉트론 주식회사 실리콘 산질화물을 포함하는 절연막의 형성 방법 및 장치
JP3598032B2 (ja) * 1999-11-30 2004-12-08 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法並びに保温ユニット
JP2001208478A (ja) * 2000-01-31 2001-08-03 Tokyo Electron Ltd 熱処理装置
JP4267506B2 (ja) 2001-01-11 2009-05-27 株式会社日立国際電気 プラズマ処理装置
JP4350322B2 (ja) * 2001-04-27 2009-10-21 株式会社日立国際電気 加熱処理装置
JP2003213432A (ja) * 2002-01-24 2003-07-30 Shinko Seiki Co Ltd プラズマｃｖｄ装置用電極
JP3881937B2 (ja) * 2002-07-05 2007-02-14 株式会社日立国際電気 半導体製造装置または加熱装置
JP2004221102A (ja) 2003-01-09 2004-08-05 Hitachi Kokusai Electric Inc 基板処理装置

Also Published As

Publication number Publication date
JP2007088324A (ja) 2007-04-05
CN100452291C (zh) 2009-01-14
TWI308364B (en) 2009-04-01
KR100719307B1 (ko) 2007-05-18
JP4820137B2 (ja) 2011-11-24
KR100742451B1 (ko) 2007-07-25
CN2917150Y (zh) 2007-06-27
KR20070034978A (ko) 2007-03-29
KR20070034911A (ko) 2007-03-29
CN1941278A (zh) 2007-04-04

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