TW200721312A - Semiconductor on glass insulator with deposited barrier layer - Google Patents

Semiconductor on glass insulator with deposited barrier layer

Info

Publication number
TW200721312A
TW200721312A TW095130584A TW95130584A TW200721312A TW 200721312 A TW200721312 A TW 200721312A TW 095130584 A TW095130584 A TW 095130584A TW 95130584 A TW95130584 A TW 95130584A TW 200721312 A TW200721312 A TW 200721312A
Authority
TW
Taiwan
Prior art keywords
barrier layer
semiconductor
deposited barrier
glass insulator
glass substrate
Prior art date
Application number
TW095130584A
Other languages
English (en)
Other versions
TWI305014B (en
Inventor
James Gregory Couillard
Kishor Purushottam Gadkaree
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of TW200721312A publication Critical patent/TW200721312A/zh
Application granted granted Critical
Publication of TWI305014B publication Critical patent/TWI305014B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
TW095130584A 2005-08-26 2006-08-20 Semiconductor on glass insulator with deposited barrier layer TWI305014B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/213,130 US7268051B2 (en) 2005-08-26 2005-08-26 Semiconductor on glass insulator with deposited barrier layer

Publications (2)

Publication Number Publication Date
TW200721312A true TW200721312A (en) 2007-06-01
TWI305014B TWI305014B (en) 2009-01-01

Family

ID=37772148

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095130584A TWI305014B (en) 2005-08-26 2006-08-20 Semiconductor on glass insulator with deposited barrier layer

Country Status (7)

Country Link
US (1) US7268051B2 (zh)
EP (1) EP1929511B1 (zh)
JP (1) JP2009506540A (zh)
KR (1) KR101291956B1 (zh)
CN (1) CN101248515B (zh)
TW (1) TWI305014B (zh)
WO (1) WO2007024549A2 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102005052357A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
US7619283B2 (en) 2007-04-20 2009-11-17 Corning Incorporated Methods of fabricating glass-based substrates and apparatus employing same
EP1993128A3 (en) * 2007-05-17 2010-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
US7696058B2 (en) * 2007-10-31 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5548395B2 (ja) * 2008-06-25 2014-07-16 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5700617B2 (ja) * 2008-07-08 2015-04-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
KR101058105B1 (ko) * 2009-04-06 2011-08-24 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
KR101127574B1 (ko) * 2009-04-06 2012-03-23 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
US8674468B2 (en) * 2009-05-29 2014-03-18 Carestream Health, Inc. Imaging array with dual height semiconductor and method of making same
US7948017B2 (en) * 2009-06-19 2011-05-24 Carestream Health, Inc. Digital radiography imager with buried interconnect layer in silicon-on-glass and method of fabricating same
US8129810B2 (en) * 2009-06-19 2012-03-06 Carestream Health, Inc. Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates
US7968358B2 (en) * 2009-07-29 2011-06-28 Carestream Health, Inc. Digital radiographic flat-panel imaging array with dual height semiconductor and method of making same
DE102009042886A1 (de) 2009-09-24 2011-05-26 Schott Ag Verfahren zur Herstellung einer Solarzelle oder eines Transistors mit einer kristallinen Silizium-Dünnschicht
US8377825B2 (en) * 2009-10-30 2013-02-19 Corning Incorporated Semiconductor wafer re-use using chemical mechanical polishing
US8562849B2 (en) * 2009-11-30 2013-10-22 Corning Incorporated Methods and apparatus for edge chamfering of semiconductor wafers using chemical mechanical polishing
US9404160B2 (en) 2009-12-22 2016-08-02 Becton, Dickinson And Company Methods for the detection of microorganisms
JP5643509B2 (ja) * 2009-12-28 2014-12-17 信越化学工業株式会社 応力を低減したｓｏｓ基板の製造方法
US8357974B2 (en) 2010-06-30 2013-01-22 Corning Incorporated Semiconductor on glass substrate with stiffening layer and process of making the same
US8405036B2 (en) 2010-08-24 2013-03-26 Carestream Health, Inc. Digital radiography imager with buried interconnect layer in silicon-on-glass and method of fabricating same
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP5810718B2 (ja) * 2011-03-18 2015-11-11 富士ゼロックス株式会社 シリコン層転写用基板及び半導体基板の製造方法
CN103872189B (zh) * 2012-12-18 2016-09-07 比亚迪股份有限公司 垂直结构白光led芯片及其制备方法
EP3475975B1 (en) * 2016-06-24 2021-12-15 Qromis, Inc. Method of manufacture of a polycrystalline ceramic substrate
FR3079661A1 (fr) * 2018-03-29 2019-10-04 Soitec Procede de fabrication d'un substrat pour filtre radiofrequence

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3352340B2 (ja) * 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
CA2232796C (en) 1997-03-26 2002-01-22 Canon Kabushiki Kaisha Thin film forming process
US6155909A (en) 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
JPH11307747A (ja) 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
US6093623A (en) 1998-08-04 2000-07-25 Micron Technology, Inc. Methods for making silicon-on-insulator structures
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW452866B (en) * 2000-02-25 2001-09-01 Lee Tien Hsi Manufacturing method of thin film on a substrate
US6323408B1 (en) 2000-02-29 2001-11-27 Chi Fai Liu Music creation
US6610582B1 (en) 2002-03-26 2003-08-26 Northrop Grumman Corporation Field-assisted fusion bonding
US7176528B2 (en) 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
JP2004335642A (ja) * 2003-05-06 2004-11-25 Canon Inc 基板およびその製造方法
FR2856192B1 (fr) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator Procede de realisation de structure heterogene et structure obtenue par un tel procede
JP4523299B2 (ja) * 2003-10-31 2010-08-11 学校法人早稲田大学 薄膜コンデンサの製造方法

Also Published As

Publication number Publication date
KR20080049068A (ko) 2008-06-03
EP1929511A2 (en) 2008-06-11
US20070048968A1 (en) 2007-03-01
WO2007024549A3 (en) 2007-09-07
CN101248515A (zh) 2008-08-20
WO2007024549A2 (en) 2007-03-01
EP1929511A4 (en) 2009-09-23
TWI305014B (en) 2009-01-01
JP2009506540A (ja) 2009-02-12
US7268051B2 (en) 2007-09-11
CN101248515B (zh) 2012-03-28
KR101291956B1 (ko) 2013-08-09
EP1929511B1 (en) 2016-04-13

Similar Documents

Publication Publication Date Title
TW200721312A (en) Semiconductor on glass insulator with deposited barrier layer
WO2006112995A3 (en) Glass-based semiconductor on insulator structures and methods of making same
TW200619165A (en) High strain glass/glass-ceramic containing semiconductor-on-insulator structures
ATE539180T1 (de) Sioc:h-beschichtete substrate und herstellungsverfahren dafür
TW200711108A (en) Semiconductor memory device with dielectric structure and method for fabricating the same
TW200625529A (en) Contact hole structures and contact structures and fabrication methods thereof
WO2008051503A3 (en) Light-emitter-based devices with lattice-mismatched semiconductor structures
TW200608418A (en) Thin-film material and the production process thereof
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
TW200628574A (en) Adhesion promoter, electroactive layer and electroactive device comprising same, and method
TW200729343A (en) Method for fabricating controlled stress silicon nitride films
WO2008063337A3 (en) Semiconductor-on-diamond devices and associated methods
WO2008069930A3 (en) Flexible substrates having a thin-film barrier
TW200705017A (en) Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
EP1998369A3 (en) Semiconductor substrate and manufacturing method of semiconductor device
WO2007078686A3 (en) Method of polishing a semiconductor-on-insulator structure
WO2009092794A3 (fr) Objet muni d'un element graphique reporte sur un support et procede de realisation d'un tel objet
TW200741978A (en) Stressor integration and method thereof
WO2010009716A3 (de) Strahlungsemittierende vorrichtung und verfahren zur herstellung einer strahlungsemittierenden vorrichtung
TW200631078A (en) A method of making a semiconductor structure for high power semiconductor devices
TW200746456A (en) Nitride-based semiconductor device and production method thereof
TW200746265A (en) Methods and apparatus for epitaxial film formation
TW200725889A (en) Semiconductor device and method for forming the same
TW200729483A (en) Vertical organic transistor and fabricating method of the same
FR2960703B1 (fr) Dispositif optoelectronique avec electrode enterree

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees