TW200720836A - Projection mask, laser-machining method, laser machining apparatus, and thin-film transistor element - Google Patents

Projection mask, laser-machining method, laser machining apparatus, and thin-film transistor element

Info

Publication number
TW200720836A
TW200720836A TW095131876A TW95131876A TW200720836A TW 200720836 A TW200720836 A TW 200720836A TW 095131876 A TW095131876 A TW 095131876A TW 95131876 A TW95131876 A TW 95131876A TW 200720836 A TW200720836 A TW 200720836A
Authority
TW
Taiwan
Prior art keywords
laser
projection mask
axis
film transistor
transistor element
Prior art date
Application number
TW095131876A
Other languages
English (en)
Inventor
Junichiro Nakayama
Hiroshi Tsunasawa
Ikumi Itsumi
Masashi Maekawa
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200720836A publication Critical patent/TW200720836A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
TW095131876A 2005-08-29 2006-08-29 Projection mask, laser-machining method, laser machining apparatus, and thin-film transistor element TW200720836A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005248455A JP2007067020A (ja) 2005-08-29 2005-08-29 投影マスク、レーザ加工方法、レーザ加工装置および薄膜トランジスタ素子

Publications (1)

Publication Number Publication Date
TW200720836A true TW200720836A (en) 2007-06-01

Family

ID=37808809

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131876A TW200720836A (en) 2005-08-29 2006-08-29 Projection mask, laser-machining method, laser machining apparatus, and thin-film transistor element

Country Status (3)

Country Link
JP (1) JP2007067020A (zh)
TW (1) TW200720836A (zh)
WO (1) WO2007026722A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097453A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 低温多晶硅薄膜、薄膜晶体管及各自制备方法、显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3642546B2 (ja) * 1997-08-12 2005-04-27 株式会社東芝 多結晶半導体薄膜の製造方法
KR100303142B1 (ko) * 1999-10-29 2001-11-02 구본준, 론 위라하디락사 액정표시패널의 제조방법
JP2003037061A (ja) * 2001-07-24 2003-02-07 Sharp Corp 半導体薄膜およびその形成方法並びに半導体装置
JP2004119971A (ja) * 2002-09-04 2004-04-15 Sharp Corp レーザ加工方法およびレーザ加工装置
JP2004207691A (ja) * 2002-12-11 2004-07-22 Sharp Corp 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
KR100646160B1 (ko) * 2002-12-31 2006-11-14 엘지.필립스 엘시디 주식회사 순차측면결정화를 위한 마스크 및 이를 이용한 실리콘결정화 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097453A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 低温多晶硅薄膜、薄膜晶体管及各自制备方法、显示装置
WO2017028499A1 (zh) * 2015-08-14 2017-02-23 京东方科技集团股份有限公司 低温多晶硅薄膜、薄膜晶体管及各自制备方法、显示装置
CN105097453B (zh) * 2015-08-14 2018-10-19 京东方科技集团股份有限公司 低温多晶硅薄膜、薄膜晶体管及各自制备方法、显示装置

Also Published As

Publication number Publication date
JP2007067020A (ja) 2007-03-15
WO2007026722A1 (ja) 2007-03-08

Similar Documents

Publication Publication Date Title
TWI263337B (en) Semiconductor device and semiconductor device producing system
TWI595326B (zh) 成膜罩體之製造方法及雷射加工裝置
KR100873927B1 (ko) 기판상의 반도체막 영역의 레이저 결정화 처리를 위한 공정 및 마스크 투영 시스템
TW200501235A (en) Method of manufacturing an active matrix substrate and an image display device using the same
JP5432438B2 (ja) レーザ光線の均一な角度分布生成装置
AU2003304487A8 (en) Microlithographic projection exposure
US9802270B2 (en) Laser machining apparatus
TW200606507A (en) Variable mask device for crystallizing silicon layer and method for crystallizing using the same
TW200616061A (en) Laser beam processing apparatus for processing semiconductor wafer in production of semiconductor devices, laser beam processing method executed therein, and such semiconductor wafer processed thereby
TW200500666A (en) Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2000066133A5 (zh)
JP2020044579A5 (ja) レーザーリフロー装置
TW200641410A (en) Display device with polarizer sheet and method for manufacturing polarizer sheet
CN204300754U (zh) 光照射装置
TW200500822A (en) Lithographic apparatus and device manufacturing method
TW200611079A (en) Lithographic apparatus, control system and device manufacturing method
TW200725699A (en) Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor device
KR20090029748A (ko) 광 균일화 장치 및 가공 면에 선형 강도 분포를 발생시키기위한 레이저 장치
US20140168624A1 (en) Exposure apparatus, method of controlling the same, and alignment method for exposure
TW200720836A (en) Projection mask, laser-machining method, laser machining apparatus, and thin-film transistor element
JP2007235117A5 (zh)
DE50205605D1 (de) Vorrichtung zur substratbehandlung mittels laserstrahlung
CN105643107A (zh) 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状
TW200722935A (en) Exposure apparatus, exposure method, projection optical system and device manufacturing method
EP1536283A4 (en) MASK, INSPECTION METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE