TW200725699A - Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor device - Google Patents
Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor deviceInfo
- Publication number
- TW200725699A TW200725699A TW095131877A TW95131877A TW200725699A TW 200725699 A TW200725699 A TW 200725699A TW 095131877 A TW095131877 A TW 095131877A TW 95131877 A TW95131877 A TW 95131877A TW 200725699 A TW200725699 A TW 200725699A
- Authority
- TW
- Taiwan
- Prior art keywords
- laser processing
- photo mask
- thin film
- film transistor
- area
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a projection photo mask, laser processing method and laser processing apparatus to irradiate target for making uniform crystal. It also provides a thin film transistor device with uniform electric characteristic for irradiating target. The projection photo mask 25 of the invention forms the first light transparent pattern 25a on the first and the fourth areas BA, BD and the second light transparent pattern 25b on the second and the third areas BB, BC. The laser 31 from light source 21 irradiates the installed projection photo mask 25 according to the order in the first area BA, the second area BB, the third area BC, and the fourth area BD. The laser irradiates the semiconductor film 37 through the said the first and the second light transparent patterns 25a, 25b.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005248456 | 2005-08-29 | ||
JP2005334880A JP2007096244A (en) | 2005-08-29 | 2005-11-18 | Projection mask, laser machining method, laser machining device, and thin-film transistor element |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200725699A true TW200725699A (en) | 2007-07-01 |
Family
ID=37808810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095131877A TW200725699A (en) | 2005-08-29 | 2006-08-29 | Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2007096244A (en) |
TW (1) | TW200725699A (en) |
WO (1) | WO2007026723A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI829748B (en) * | 2018-08-27 | 2024-01-21 | 美商萬騰榮公司 | Ultraviolet laser apparatus, method of making electronic part, method of using display fabrication apparatus, and ultraviolet reflective mirror |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101191404B1 (en) * | 2006-01-12 | 2012-10-16 | 삼성디스플레이 주식회사 | Mask for silicone crystallization, method for crystallizing silicone using the same and display device |
JP2009289922A (en) * | 2008-05-28 | 2009-12-10 | Sharp Corp | Mask, laser crystallization apparatus, laser crystallization method, crystal material, and semiconductor device |
JP2009302251A (en) * | 2008-06-12 | 2009-12-24 | Sharp Corp | Laser crystallization device, mask, laser crystallization method, crystal material, and semiconductor element |
JP5093815B2 (en) * | 2009-02-13 | 2012-12-12 | 株式会社日本製鋼所 | Method and apparatus for crystallizing amorphous film |
WO2018109912A1 (en) * | 2016-12-15 | 2018-06-21 | 堺ディスプレイプロダクト株式会社 | Laser annealing apparatus, laser annealing method, and mask |
JP2019036636A (en) * | 2017-08-15 | 2019-03-07 | 株式会社ブイ・テクノロジー | Laser irradiation device, thin film transistor manufacturing method and projection mask |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001028346A (en) * | 1999-07-14 | 2001-01-30 | Sumitomo Heavy Ind Ltd | Shutter mechanism for precise irradiation and control method |
KR100303142B1 (en) * | 1999-10-29 | 2001-11-02 | 구본준, 론 위라하디락사 | Fabricating method of liquid crystal display pannel |
JP3945805B2 (en) * | 2001-02-08 | 2007-07-18 | 株式会社東芝 | Laser processing method, liquid crystal display device manufacturing method, laser processing device, and semiconductor device manufacturing method |
KR100379361B1 (en) * | 2001-05-30 | 2003-04-07 | 엘지.필립스 엘시디 주식회사 | crystallization method of a silicon film |
US6809801B2 (en) * | 2002-03-11 | 2004-10-26 | Sharp Laboratories Of America, Inc. | 1:1 projection system and method for laser irradiating semiconductor films |
US6733931B2 (en) * | 2002-03-13 | 2004-05-11 | Sharp Laboratories Of America, Inc. | Symmetrical mask system and method for laser irradiation |
JP2004119971A (en) * | 2002-09-04 | 2004-04-15 | Sharp Corp | Laser processing method and laser processing device |
JP2004207691A (en) * | 2002-12-11 | 2004-07-22 | Sharp Corp | Semiconductor thin film manufacturing method and apparatus, semiconductor thin film manufactured by method, and semiconductor element using thin film |
KR100646160B1 (en) * | 2002-12-31 | 2006-11-14 | 엘지.필립스 엘시디 주식회사 | A mask for sequential lateral solidification and a silicon crystallizing method using the same |
-
2005
- 2005-11-18 JP JP2005334880A patent/JP2007096244A/en active Pending
-
2006
- 2006-08-29 WO PCT/JP2006/317019 patent/WO2007026723A1/en active Application Filing
- 2006-08-29 TW TW095131877A patent/TW200725699A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI829748B (en) * | 2018-08-27 | 2024-01-21 | 美商萬騰榮公司 | Ultraviolet laser apparatus, method of making electronic part, method of using display fabrication apparatus, and ultraviolet reflective mirror |
US11885990B2 (en) | 2018-08-27 | 2024-01-30 | Materion Corporation | UV reflective mirrors for display fabrication |
Also Published As
Publication number | Publication date |
---|---|
JP2007096244A (en) | 2007-04-12 |
WO2007026723A1 (en) | 2007-03-08 |
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