TW200715057A - Positive resist composition and method for forming resist pattern - Google Patents

Positive resist composition and method for forming resist pattern

Info

Publication number
TW200715057A
TW200715057A TW095115324A TW95115324A TW200715057A TW 200715057 A TW200715057 A TW 200715057A TW 095115324 A TW095115324 A TW 095115324A TW 95115324 A TW95115324 A TW 95115324A TW 200715057 A TW200715057 A TW 200715057A
Authority
TW
Taiwan
Prior art keywords
resist composition
acid
positive resist
alkali
forming
Prior art date
Application number
TW095115324A
Other languages
English (en)
Other versions
TWI338193B (en
Inventor
Hiroshi Shimbori
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005134025A external-priority patent/JP2006309050A/ja
Priority claimed from JP2005134026A external-priority patent/JP2006309051A/ja
Priority claimed from JP2005137296A external-priority patent/JP4757532B2/ja
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200715057A publication Critical patent/TW200715057A/zh
Application granted granted Critical
Publication of TWI338193B publication Critical patent/TWI338193B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095115324A 2005-05-02 2006-04-28 Positive resist composition and method for forming resist pattern TWI338193B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005134025A JP2006309050A (ja) 2005-05-02 2005-05-02 電子線を用いてＭＥＭＳ（ＭｉｃｒｏＥｌｅｃｔｒｏＭｅｃｈａｎｉｃａｌＳｙｓｔｅｍｓ）を製造するためのポジ型レジスト組成物およびレジストパターン形成方法
JP2005134026A JP2006309051A (ja) 2005-05-02 2005-05-02 ｇ線、ｉ線、ＫｒＦエキシマレーザーおよび電子線から選ばれる少なくとも２種の露光光源を用いて露光する工程に用いられるポジ型レジスト組成物およびレジストパターン形成方法
JP2005137296A JP4757532B2 (ja) 2005-05-10 2005-05-10 電子線用ポジ型レジスト組成物およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200715057A true TW200715057A (en) 2007-04-16
TWI338193B TWI338193B (en) 2011-03-01

Family

ID=37396406

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095115324A TWI338193B (en) 2005-05-02 2006-04-28 Positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
US (1) US7816072B2 (zh)
TW (1) TWI338193B (zh)
WO (1) WO2006120896A1 (zh)

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TWI391781B (zh) * 2007-11-19 2013-04-01 Tokyo Ohka Kogyo Co Ltd 光阻組成物，光阻圖型之形成方法，新穎化合物及酸產生劑
US8470189B2 (en) * 2008-06-03 2013-06-25 Tdk Corporation Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element
JP5544212B2 (ja) * 2009-04-27 2014-07-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物およびその製造方法、酸発生剤
JP2011057663A (ja) 2009-08-11 2011-03-24 Sumitomo Chemical Co Ltd 化合物及びフォトレジスト組成物
KR20150129676A (ko) * 2013-03-14 2015-11-20 디아이씨 가부시끼가이샤 변성 노볼락형 페놀 수지, 레지스트 재료, 도막 및 레지스트 영구막
KR102352289B1 (ko) * 2014-04-17 2022-01-19 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 디스플레이 기판의 제조 방법
JP6650696B2 (ja) 2014-09-08 2020-02-19 信越化学工業株式会社 ドライフィルム積層体の製造方法
US9946157B2 (en) * 2015-03-31 2018-04-17 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
CN106744664B (zh) * 2016-11-22 2019-01-18 歌尔股份有限公司 在mems传感器上形成过滤网的方法以及mems传感器

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Publication number Priority date Publication date Assignee Title
JPS59194834A (ja) 1983-04-19 1984-11-05 昭和電工株式会社 ポリウレタンフオ−ムとオレフイン系重合体混合物の成形物とからなる積層物
JPH03218005A (ja) 1990-01-23 1991-09-25 Oki Electric Ind Co Ltd レジストパターン形成方法
JP2547944B2 (ja) 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
JPH06289614A (ja) 1993-04-06 1994-10-18 Tokyo Ohka Kogyo Co Ltd ネガ型感放射線レジスト組成物
JPH07134412A (ja) 1993-11-11 1995-05-23 Tokyo Ohka Kogyo Co Ltd ネガ型放射線感応性レジスト組成物
JPH0829987A (ja) 1994-07-19 1996-02-02 Nippon Telegr & Teleph Corp <Ntt> ポジ型シリコーンレジスト材料
JP3046225B2 (ja) 1995-06-15 2000-05-29 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
JPH097924A (ja) 1995-06-21 1997-01-10 Nec Corp 半導体装置の製造装置及び半導体装置の製造方法
JP3665166B2 (ja) * 1996-07-24 2005-06-29 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JP3959763B2 (ja) 1996-11-19 2007-08-15 Ｔｄｋ株式会社 微小機械素子の製造方法
TW530192B (en) * 1997-01-27 2003-05-01 Shinetsu Chemical Co Partially hydrogenated polymer compound and chemically sensitized positive resist material
TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
JP3904329B2 (ja) * 1998-05-20 2007-04-11 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2002110536A (ja) 2000-10-05 2002-04-12 Tdk Corp レジストパターン、レジストパターンの作製方法、薄膜のパターニング方法、及びマイクロデバイスの製造方法
JP2002258481A (ja) 2001-03-01 2002-09-11 Sumitomo Bakelite Co Ltd 感放射線性組成物
US20030006055A1 (en) * 2001-07-05 2003-01-09 Walsin Advanced Electronics Ltd Semiconductor package for fixed surface mounting
JP4951827B2 (ja) 2001-08-17 2012-06-13 Ｊｓｒ株式会社 スルホニル構造を有する化合物、それを用いた感放射線性酸発生剤、ポジ型感放射線性樹脂組成物、及びネガ型感放射線性樹脂組成物
JP3568925B2 (ja) * 2001-10-30 2004-09-22 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法および薄膜磁気ヘッドの製造方法ならびに薄膜パターン形成方法
JP3918542B2 (ja) 2001-12-11 2007-05-23 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6764808B2 (en) * 2002-02-27 2004-07-20 Advanced Micro Devices, Inc. Self-aligned pattern formation using wavelenghts
JP4253486B2 (ja) * 2002-09-25 2009-04-15 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法
JP4149306B2 (ja) 2003-04-30 2008-09-10 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2004354609A (ja) 2003-05-28 2004-12-16 Tokyo Ohka Kogyo Co Ltd 化学増幅型ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP2005010215A (ja) 2003-06-16 2005-01-13 Tokyo Ohka Kogyo Co Ltd １つの基板上に集積回路と液晶ディスプレイ部分が形成された基板製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP4533639B2 (ja) * 2003-07-22 2010-09-01 富士フイルム株式会社 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法
JP4173413B2 (ja) 2003-08-28 2008-10-29 東京応化工業株式会社 リフトオフ用レジストパターンの形成方法
TWI366067B (en) * 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
EP1835342A3 (en) * 2006-03-14 2008-06-04 FUJIFILM Corporation Positive resist composition and pattern forming method using the same

Also Published As

Publication number Publication date
US7816072B2 (en) 2010-10-19
WO2006120896A1 (ja) 2006-11-16
US20090068594A1 (en) 2009-03-12
TWI338193B (en) 2011-03-01

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