TW200712185A - Abrasive agent for semiconductor - Google Patents

Abrasive agent for semiconductor

Info

Publication number
TW200712185A
TW200712185A TW095118884A TW95118884A TW200712185A TW 200712185 A TW200712185 A TW 200712185A TW 095118884 A TW095118884 A TW 095118884A TW 95118884 A TW95118884 A TW 95118884A TW 200712185 A TW200712185 A TW 200712185A
Authority
TW
Taiwan
Prior art keywords
abrasive agent
polishing
semiconductor
abrasive
formula
Prior art date
Application number
TW095118884A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshinori Kon
Iori Yoshida
Norihito Nakazawa
Original Assignee
Asahi Glass Co Ltd
Seimi Chem Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Seimi Chem Kk filed Critical Asahi Glass Co Ltd
Publication of TW200712185A publication Critical patent/TW200712185A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H10P95/062—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095118884A 2005-06-06 2006-05-26 Abrasive agent for semiconductor TW200712185A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005165768A JP2006339594A (ja) 2005-06-06 2005-06-06 半導体用研磨剤

Publications (1)

Publication Number Publication Date
TW200712185A true TW200712185A (en) 2007-04-01

Family

ID=37498261

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118884A TW200712185A (en) 2005-06-06 2006-05-26 Abrasive agent for semiconductor

Country Status (7)

Country Link
US (1) US20080086950A1 (enExample)
EP (1) EP1890321A1 (enExample)
JP (1) JP2006339594A (enExample)
KR (1) KR20080012864A (enExample)
CN (1) CN101189706A (enExample)
TW (1) TW200712185A (enExample)
WO (1) WO2006132055A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101068068B1 (ko) * 2002-07-22 2011-09-28 아사히 가라스 가부시키가이샤 반도체용 연마제, 그 제조 방법 및 연마 방법
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
CN101512733A (zh) * 2006-09-11 2009-08-19 旭硝子株式会社 用于半导体集成电路装置的抛光剂、抛光方法以及半导体集成电路装置的制造方法
WO2008032681A1 (en) * 2006-09-13 2008-03-20 Asahi Glass Co., Ltd. Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
KR101075491B1 (ko) 2009-01-16 2011-10-21 주식회사 하이닉스반도체 반도체 소자의 제조방법
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
JP4784694B1 (ja) * 2010-05-27 2011-10-05 横浜ゴム株式会社 液状凝固剤およびタイヤパンクシール材セット
SG188460A1 (en) * 2010-09-08 2013-04-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
JP2012146976A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP6051632B2 (ja) * 2011-07-20 2016-12-27 日立化成株式会社 研磨剤及び基板の研磨方法
US10287457B2 (en) * 2012-11-02 2019-05-14 Lawrence Livermore National Security, Llc Polishing slurry preventing agglomeration of charged colloids without loss of surface activity
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN105778774A (zh) * 2014-12-23 2016-07-20 安集微电子（上海）有限公司 一种化学机械抛光液
KR102514041B1 (ko) * 2015-12-09 2023-03-24 삼성전자주식회사 반도체 소자 제조 방법
JP6602720B2 (ja) * 2016-04-04 2019-11-06 グローバルウェーハズ・ジャパン株式会社 半導体基板の保護膜形成方法
CN107369618B (zh) * 2017-07-07 2020-02-21 上海华虹宏力半导体制造有限公司 晶圆的平坦化方法
CN111316399B (zh) * 2017-08-31 2023-12-26 胜高股份有限公司 半导体晶片的制造方法
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002198331A (ja) * 2000-12-26 2002-07-12 Jsr Corp 研磨方法
ATE470236T1 (de) * 2002-04-30 2010-06-15 Hitachi Chemical Co Ltd Poliermittel und polierverfahren
KR101068068B1 (ko) * 2002-07-22 2011-09-28 아사히 가라스 가부시키가이샤 반도체용 연마제, 그 제조 방법 및 연마 방법
JP2004123931A (ja) * 2002-10-03 2004-04-22 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤

Also Published As

Publication number Publication date
CN101189706A (zh) 2008-05-28
WO2006132055A1 (ja) 2006-12-14
JP2006339594A (ja) 2006-12-14
US20080086950A1 (en) 2008-04-17
EP1890321A1 (en) 2008-02-20
KR20080012864A (ko) 2008-02-12

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