TW200710928A - Gas exhaust system and semiconductor manufacturing apparatus and method for manufacturing thin film using the same - Google Patents
Gas exhaust system and semiconductor manufacturing apparatus and method for manufacturing thin film using the sameInfo
- Publication number
- TW200710928A TW200710928A TW095116733A TW95116733A TW200710928A TW 200710928 A TW200710928 A TW 200710928A TW 095116733 A TW095116733 A TW 095116733A TW 95116733 A TW95116733 A TW 95116733A TW 200710928 A TW200710928 A TW 200710928A
- Authority
- TW
- Taiwan
- Prior art keywords
- shower head
- manufacturing apparatus
- semiconductor manufacturing
- thin film
- gas
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050040009A KR100747735B1 (ko) | 2005-05-13 | 2005-05-13 | 반도체 제조 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200710928A true TW200710928A (en) | 2007-03-16 |
TWI359444B TWI359444B (en) | 2012-03-01 |
Family
ID=37705059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095116733A TWI359444B (en) | 2005-05-13 | 2006-05-11 | Semiconductor manufacturing apparatus and method f |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100747735B1 (zh) |
TW (1) | TWI359444B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8617349B2 (en) | 2009-10-15 | 2013-12-31 | Orbotech LT Solar, LLC. | Showerhead assembly for plasma processing chamber |
US9287152B2 (en) | 2009-12-10 | 2016-03-15 | Orbotech LT Solar, LLC. | Auto-sequencing multi-directional inline processing method |
US9462921B2 (en) | 2011-05-24 | 2016-10-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
CN112342528A (zh) * | 2019-08-06 | 2021-02-09 | 台湾积体电路制造股份有限公司 | 半导体制程机台及其应用的方法 |
US11015247B2 (en) | 2017-12-08 | 2021-05-25 | Lam Research Corporation | Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
CN113913784A (zh) * | 2020-11-13 | 2022-01-11 | 台湾积体电路制造股份有限公司 | 气体幕帘元件、传送气体的导管系统与传送气体的方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101380861B1 (ko) * | 2007-11-09 | 2014-04-03 | 참엔지니어링(주) | 플라즈마 에칭 챔버 |
KR101494601B1 (ko) * | 2013-06-21 | 2015-02-23 | 주식회사 테스 | 가스공급유닛 및 이를 구비한 박막증착장치 |
KR102585595B1 (ko) * | 2017-07-31 | 2023-10-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 배플을 갖는 가스 공급 부재 |
US11077410B2 (en) | 2017-10-09 | 2021-08-03 | Applied Materials, Inc. | Gas injector with baffle |
CN114657643B (zh) * | 2020-12-24 | 2023-10-03 | 中国科学院微电子研究所 | 晶片处理设备 |
KR20240073395A (ko) | 2022-11-18 | 2024-05-27 | 주식회사 한화 | 기판 처리 장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07189966A (ja) * | 1993-12-28 | 1995-07-28 | Mitsubishi Electric Corp | スクロール圧縮機 |
KR100406176B1 (ko) * | 2000-06-19 | 2003-11-19 | 주식회사 하이닉스반도체 | 샤워헤드 및 이를 이용한 액체 원료 공급 장치 |
KR20040103216A (ko) * | 2003-05-31 | 2004-12-08 | 삼성전자주식회사 | 절연막 증착 장치 |
KR20050001748A (ko) * | 2003-06-26 | 2005-01-07 | 엘지.필립스 엘시디 주식회사 | 화학기상 증착장비 |
-
2005
- 2005-05-13 KR KR1020050040009A patent/KR100747735B1/ko active IP Right Grant
-
2006
- 2006-05-11 TW TW095116733A patent/TWI359444B/zh not_active IP Right Cessation
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8617349B2 (en) | 2009-10-15 | 2013-12-31 | Orbotech LT Solar, LLC. | Showerhead assembly for plasma processing chamber |
US9287152B2 (en) | 2009-12-10 | 2016-03-15 | Orbotech LT Solar, LLC. | Auto-sequencing multi-directional inline processing method |
US9462921B2 (en) | 2011-05-24 | 2016-10-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
US11053587B2 (en) | 2012-12-21 | 2021-07-06 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
TWI697942B (zh) * | 2012-12-21 | 2020-07-01 | 美商諾發系統有限公司 | 用於遠距離電漿原子層沉積之自由基來源設計 |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
US10494717B2 (en) | 2015-05-26 | 2019-12-03 | Lam Research Corporation | Anti-transient showerhead |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US11608559B2 (en) | 2016-12-14 | 2023-03-21 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US11101164B2 (en) | 2016-12-14 | 2021-08-24 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US12000047B2 (en) | 2016-12-14 | 2024-06-04 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US11015247B2 (en) | 2017-12-08 | 2021-05-25 | Lam Research Corporation | Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
CN112342528A (zh) * | 2019-08-06 | 2021-02-09 | 台湾积体电路制造股份有限公司 | 半导体制程机台及其应用的方法 |
CN112342528B (zh) * | 2019-08-06 | 2023-02-17 | 台湾积体电路制造股份有限公司 | 半导体制程机台及其应用的方法 |
CN113913784B (zh) * | 2020-11-13 | 2024-03-08 | 台湾积体电路制造股份有限公司 | 气体幕帘元件、传送气体的导管系统与传送气体的方法 |
US11971057B2 (en) | 2020-11-13 | 2024-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas transport system |
CN113913784A (zh) * | 2020-11-13 | 2022-01-11 | 台湾积体电路制造股份有限公司 | 气体幕帘元件、传送气体的导管系统与传送气体的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20060117613A (ko) | 2006-11-17 |
KR100747735B1 (ko) | 2007-08-09 |
TWI359444B (en) | 2012-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |