1359444 修正日期:100年10月3日 爲第95116733號中文說明書無劃線修正本 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種排氣系統以及使用此系統製造薄 膜的半導體製造裝置與方法’且特別是有關於一種具有增 大尺寸的化學蒸汽沈積（chemical vapor deposition, CVD ) 設備’其中可穩定地執行高溫控制並且可穩定地傳入與排 出處理氣體。 【先前技術】 一般來說’當半導體裝置圖樣變的更精細來最大化每 單位晶圓輸出時’會利用對於能量敏感的感光膜。然而， 因為由於在感光膜下的材料層會發生散佈的反射光，所以 會執行使用氮化物膜的抗反射塗層（anti-reflection coating， ARC)製程來防止散佈的反射光。再者，因為晶圓尺寸的 逐漸增加，目前已使用200毫米或更大尺寸的晶圓。 在至少一個反應室（Chamber)中此大尺寸晶圓會經歷 半導體裝置製造所需的各種製程。此製程包括使用用於傳 入至反應室的沈積物的反應氣體在晶圓上形成材料層的製 程與/或根據預先定義圖樣使用用於蝕刻的反應氣體蝕刻 形成在晶圓上的材料層的製程。 例如，晶圓會經歷在晶圓上藉由CVD、PECVD或類 似=法此積預定的材料層（例如氧化物薄膜或氮化物膜） 的製程、藉由蝕刻材料層形成接觸孔來使半導體基質與金 屬線，此電性接觸的製程、灰化來移除用於接觸孔圖案結 構的光阻劑圖樣的製程以及蝕刻來移除在蝕刻接觸孔期間 1359444 修正日期:1〇〇年10月3日 爲第95116733號中文說明書無劃線修正本 損壞的基質石夕層的碎處理製程。 在用於沈積或蝕刻的反應氣體從上以順流方式導入至 反應至以執行沈積或餘刻製程的案例令，氣體注入單元會 女裝在反應室的上部以致於反應氣體可均勻地分佈在晶圓 的整個表面。 然而，在此相關技術中，會定義出用於防止感光膜的 較底圖樣的散佈反射的氮化物膜，但其會使得在後續蝕刻 裝私的感光膜圖樣倒塌。再者，當晶圓尺寸變大時，氣體 庄入單元無法在晶圓的整個表面均勻地注入反應氣體。 圖1是繪示相關技術半導體製造裝置的概念剖面圖。 圖2是相關技術喷頭（showerhead)與擋板（baffle) 的透視圖。 請參照圖1與圖2’相關技術半導體製造裝置包括具 有反應空間的反應室（chamber) 10、配置在反應室1〇的 底部以允許晶圓21置於其上的加熱（heater)區塊20、排 列在反應室10上以提供反應氣體至反應室1〇的喷頭單元 30、塑形在反應室1〇兩側且在加熱區塊2〇與喷頭單元3〇 之間的數個排氣孔40以及用於將非反應氣體透過排氣孔 40排出反應室10的泵接口 42。再者，閘閥（未繪示）會塑 形在反應室10的側表面。此外，會排列額外電漿產生單元來 在反應室中產生電漿。 相關技術喷頭單元30包括可注入反應氣體的氣體供 應孔31、閂住反應氣體供應孔31的喷頭33以及安裝在噴 頭33的預先製作擋板32,其中擋板32具有相同於噴頭的 7 1359444 修正日期:1〇〇年10月3日 爲第95116733號中文說明書無劃線修正本 尺寸以均勻地注入反應氣體至喷頭33。 在此喷頭單元30中’擋板32會以相同於喷頭33的大 小來塑造。因此，在設備定期與不定期維護時所需的大量 時間與成本會造成問題。也就是，在製程期間弧光處理的 案例中，喷頭33與安裝在喷頭33的預先製作擋板32會被 影響並且因此損壞。基此，擋板32應該與喷頭33 —起交 換。再者，在檔板32被拆解且之後再在喷頭33中組合的 案例中，擋板的組合狀態會因為工作者的技術而改變。基 此，又會造成由於在噴頭單元30内的擋板32與噴頭33 中的氣體污染或者電槳弧光產生使得維護時間變的更長以 致於降低設備的運作率與生產力。再者，也會產生較大的 維護成本。 此外，使用相關技術半導體製造裝置製造薄膜的方法 也具也下列問題。 也就是，反應氣體會經由噴頭單元3〇的氣體供應孔31 導入並且藉由擋板32的裝置均勻地供應至喷頭33的整個内 部空間。之後，反應氣體會經由噴頭33均勻地注入反應室 10。此時，低溫反應氣體會再次導入至晶圓（其會穩定在 薄膜形成溫度）以致於晶圓的溫度會務微下降。也就是， 在低溫度反應氣體通過擋板32與喷頭33的同時會有時間 延遲，因此，在反應室10中的溫度會立即地下降，並且在 一段時間後薄膜會較佳地在穩定溫度下沈積。 再者，在相關技術半導體製造裝置中，排氣孔4〇與泵 接口 42會排列在噴頭單元30與加熱區塊2〇之間的反應室 8 爲第仙⑺3號中織明書無劃線修正本 修正日期·年月3日 s 的侧壁上，經由此來移除在反應室1〇中的剩餘反應氣體與 反應時的其他生成物。然而，在大尺寸裝置的例子中，未 反應氣體的完全移除會在加熱區塊2〇的邊緣中緩慢地執 行並且當僅經由反應室的侧表面移除反應氣體時未反應氣 體無法均勻地移除。基此，未反應氣體再次於晶圓21上反 應時要在晶圓21上形成具有均句厚度的高品質薄膜就會 變的相當困難。再者，會很難確認反應氣體的均勻分佈。 也就是，不容易根據注入至反應室1〇的反應氣體的增加或 減少來控制反應氣體的分佈。 【發明内容】 本發明是要解決上述的問題，因此本發明的目的就是 提供一種排氣系統、半導體製造裝置以及使用此裝置製作 薄膜的方法，其中最佳化擋板（其提供在反應氣體導入至 大尺寸設備的喷頭的入口處）的尺寸以快速地與均勻地分 佈反應氣體在喷頭的整個内部空間並且最小化分佈氣體至 晶圓所花的時間，另外，修改反應氣體移除路徑以容易地 移除在反應室中反應氣體與反應時的其他生成物以及均勻 地分佈反應氣體以致於可以改善薄膜的均勻度。 根據本發明的目的是提供一種氣體注入系統，其包括 氣體供應裝置、擋板與喷頭。氣體供應裝置包括氣體供應 孔，氣體可經由氣體供應孔來提供，擋板是與氣體供應孔 結合在一起並且具有相同或大於氣體供應孔的尺寸，擋板 是置於離氣體供應孔下方預先定義距離的位置，噴頭是配 置於擋板下方並且是用以均勻地注入氣體至反應室。 ^444 ^444 修正日期:100年10月3日 爲第95116733號中文說明書無劃線修正# 當氣體供應孔的尺寸是1時，則擋板的尺寸最好是在 1.0至10.0的範圍内。 #板最好是透過炼接與固定程序與氣體供應孔結合在 一起。擋板可塑形.g II形平板、具有圓錐形或半球形的上 表面的平板或者具有形成在至少其上表面—部份不規則圖 形的平板。 本發明的再-目的是提供一種排氣系統，其包括排氣 f兀、排氣導5丨管與排氣系。排氣單元包括排氣孔，其中 乳體是經由排氣孔導人。排氣導引管用以導引欲排出的氣 體至排軋孔。排氣泵連結至排氣導引管。 排氣單70最好是一個薄板，其邊緣上具有彎曲或傾斜 表面，並且數個排氣孔建構在彎曲或傾斜表面。 本發明的又一目的是提供一種半導體製造裝置，其包 括反應至、喷頭單元、加熱區塊與泵接口。喷頭單元用以 ^經由氣體供應孔導人的預蚊義氣體至反應室，喷頭 早疋包括域難應孔結合在_起的擋板，檔板是具有相 同或士於氣體供應孔的尺寸並且是置於離氣體供應孔下方 預先^義轉的位置。加熱區塊是提供在喷頭單元下方以 許曰a圓置於其上。果接口是置於加熱區塊下方並且與數個 排氣孔一起提供。 喷頭單元最好包括氣體供應裝置、擋板與喷頭。氣體 Ί裝置，括氣體供應孔’氣體可經由氣體供應孔來提 ’、擋板疋透過炫接程序與氣體供應孔結合在一起。喷頭 是配置於揚板下方並且用以均勻地注人氣體至反應室。 1359444 修正日期:100年10月3日 爲第95116733號中文說明書無劃線修正本 當氣體供應孔的尺寸是1時，則擋板的尺寸最好是在 1.0至10.0的範圍内，並且在擋板與氣體供應孔的距離 好是在0.1至0.2公分範圍内。 _泵接口包括排氣單元、排氣導引管與排氣泵。排氣單 X會塑形為-個薄板’其邊緣上具有彎曲或傾斜表面並 且，個排氣孔建構在彎曲或傾斜表面上，其中氣體是經由 排氣孔導入。排氣導引管是用U導引欲排出的氣體至排氣 孔。排氣泵是連結至排氣導引管。 加熱區塊最好包括由AIN材料形成的加熱板盘支撐 物、加熱元件以及溫度感測器；並且加熱區塊可執行在攝 氏400至600度範圍内的溫度控制。 本發明的另一目的是提供一種使用半導體製造裝置製 作半，體薄膜的方法，其中半導體製造裝置包括反應室、 ，頭單元、加熱區塊與泵接口，而噴頭單元用以注入經由 氣體供應孔導入的預先定義氣體至反應室，另外喷頭單元 包括與氣體供應孔結合在一起的擋板，擋板是與氣體供應 孔結合在一起並且具有相同或大於氣體供應孔的尺寸，擋 板是置於離氣體供應孔下方預先定義距離的位置，加熱^ 塊是提供在喷頭單元下方以允許晶圓置於其上，泵接:是 置於加熱區塊下方並且與數個排氣孔一起提供，此方法包括： 放置晶圓在反應室中的加熱區塊上並且之後加熱置於加熱 區塊上的晶圓；藉由透過喷頭單元提供處理氣體至反應^ 來在晶圓上形成薄膜；以及經由泵接口移除雜質。 較佳地，晶圓會被加熱至攝氏400至6〇〇度的溫度並 11 1359444 修正日期:100年10月3日 爲第95116733號中文說明書無劃線修正本 且處理氣體會由電漿的裝置來作動。 【實施方式】 為讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下。然其並非用以限定本發明，任何熟習此技藝 者，在不脫離本發明之精神和範圍内，當可作些許之更動 與潤飾，因此本發明之保護範圍當視後附之申請專利範圍 所界定者鱗。在®中，相同元件會以㈣號碼來編號。 圖3根據本發明實施例繪示半導體製造裝置的概念剖 面圖，圖4疋顯示圖3的A部分的放大圖，圖5A至5E 與6A至6C是根據本發明實施例繪示擋板的概念剖面圖， 圖7疋根據本發明實施例顯示泵接口的概念示意圖。 請參照圖3至7，本發明的半導體製造裝置包括反應 室110、噴頭單元130、加熱區塊120與泵接口 14〇，其中 反應室110具有預先定義的反應空間與預先定義底部彎曲表 面，喷頭單元130包括與氣體供應孔131結合在一起的擋 板132以注入氧體至反應室no，加熱區塊12〇是配置在 喷頭單元130下方以允許晶圓121置於其上，泵接口 140 包括塑形在反應室110的彎曲底部表面的數個排氣孔142。 半導體製造裝置更包括用以控制反應室11〇的開啟與關閉的 閘閥（未繪示），並且晶圓121是透過閘閥載入至加熱區塊 120上或從反應室no取出。再者’在反應室11()中的壓 力會藉由閘閥的裝置來保持固定。另外’半導體製造裝置更 包括額外壓力控制器（未繪示）以及額外電漿產生器（未繪 12 爲第95116733號中文說明書無劃線修正本 修正曰期:1〇〇年1〇月3日 示），其中額外壓力控制器用以將反應室11〇保持在固定内 墨力下，以及額外電漿產生器用以在反應室110中產生 電漿。 〜 此外，反應室110會向上開啟並且更提供反應室蓋（未 繪示）以遮蓋反應室110的開啟上侧。再者，喷頭單元 母建構在反應室盍的既定位置中。當然，反應室11〇可建 構成單一單元或分為上反應室.與下反應室。 _用以載入與取出晶圓121的額外頂升銷〇iftpin)(未 綠示）會提供在加熱區塊12G中，並且用以旋轉加熱區塊 U0的驅動轴（未繪示）會提供在加熱區塊12〇的底部。 ，者，會額外地提供用以測量力σ熱區塊12G溫度的感測 器。當然’加熱區塊本身可以上下移動。加熱區塊120最 好具有相同於晶® 121的職。更好的是加熱區塊120是 以大於晶圓121來建構。再者，—個或數個晶圓121會置 於加熱區塊120上。 、此加熱區塊12〇包括加熱板122與支撐物124，其是 】料所構成。此外，加熱元件126 *安裝在加熱區 並且會提供用於感測晶圓加熱溫度的溫度感測 。此時，加熱線圈會最好是用作為加熱元件 尊4’較佳的是單一加熱線圈連續地與均勻地排列在 整個加熱板122上。去妙,^oQ „ · 田然，本發明不限於此，各種加熱構 Λ地域整個加舰塊12G。較佳的是此 加”、、&塊120會產峰的媒Λ ^ 座生約攝氏100至700度的熱並且維持所 產生的熱。也就Β，目士 疋具有攝氏400至600高溫的熱可施予 1359444 修正日期:1〇〇年10月3日 爲第95116733號中文說明書無劃線修正本 至晶圓121以增加將置於晶圓121上的薄膜的強度。 如圖4所示，喷頭單元13〇包括可提供氣體的氣體供 應孔131、經由熔接與氣體供應孔131結合在一起並且排 列至氣體供應孔131的末端的擋板132以及配置在擋板 132下方用以均勻地注入氣體至反應室no的喷頭η]。 較佳的是擋板132是按照用於氣體供應孔13i尺寸的 最佳尺寸來製作。也就是，最佳化擋板132的尺寸以致於 反應氣體可均勻地分佈在喷頭133的整個内部空間並且使 得反應氣體經由喷頭133到達基質所需的時間為最小以致 於穩定反應溫度（攝氏400至600度）所需的時間為最小。 由於經由氣體供應孔131提供的反應氣體會碰撞擋板132 至少一次，所以經由氣體供應孔131直線往前的反應氣體 會均勻地提供在喷頭133的整個區域。至此，擋板的尺寸 最好能減少。也就是，假設氣體供應孔131的尺寸T1是i， 則擋板132的尺寸T2最好是在1.0至1〇 〇的範圍。更佳 的是撞板132的尺寸T2在1.5至5.5的範圍。此外，氣體 供應孔131底端至擋板132之間的距離H1最好是在0.1 至20公分的範圍。 上述的範圍可以依據氣體供應孔的尺寸、流率與擋板 的尺寸而變動。 擋板132可以是圓形、橢圓或多邊形。當然，擂板132 的形狀不限於此’只要能讓從氣體供應孔131提供的氣體 均勻地注入至喷頭133，皆可使用任何形狀來實作。 如圖4所示’擋板132較佳形狀是平板。也就是，擋 1359444 修正日期:100年10月3日 爲第95116733號中文說明書無劃線修正本 板最佳形狀是圓形平板。當然，如圖5A至5E，各種圖樣 可建構在平板表面或者平板的上側圓錐地建構或彎曲以致 於氣體可以均勻地分佈。也就是，如圖5A所示平板可與 上面的圓錐表面一起建構。換言之，平板可以以竹帽子形 狀來製造。如圖5B所示，平板也可以以上面彎曲表面來 建構。此外，預先定義圖樣可在擋板132的表面上建構。 如圖5C所示，不規則形狀可建構在平板的整個上表面。1359444 Amendment date: October 3, 100 is the Chinese manual No. 95116733. There is no slash correction. The present invention relates to an exhaust system and a semiconductor using the system for manufacturing a thin film. The manufacturing apparatus and method 'and particularly relates to a chemical vapor deposition (CVD) apparatus having an increased size in which high temperature control can be stably performed and a process gas can be stably introduced and discharged. [Prior Art] In general, an energy sensitive photosensitive film is utilized when the semiconductor device pattern becomes finer to maximize the output per unit wafer. However, since the scattered light is scattered due to the material layer under the photosensitive film, an anti-reflection coating (ARC) process using a nitride film is performed to prevent the scattered reflected light. Furthermore, wafer sizes of 200 mm or larger have been used because of the increasing wafer size. This large size wafer undergoes various processes required for semiconductor device fabrication in at least one chamber. The process includes a process of forming a layer of material on a wafer using a reactive gas for a deposit introduced into the reaction chamber and/or etching a layer of material formed on the wafer using a reactive gas for etching according to a predefined pattern. Process. For example, the wafer may undergo a process of forming a predetermined material layer (eg, an oxide film or a nitride film) on the wafer by CVD, PECVD, or the like, forming a contact hole by etching the material layer to form the semiconductor substrate. Process with the metal line, this electrical contact, ashing to remove the photoresist pattern for the contact hole pattern structure and etching to remove during the etch contact hole 1594944 Revision date: October 3, 1 The Chinese manual No. 95116733 has no scribe line to correct the broken processing process of the damaged matrix. In the case where the reaction gas for deposition or etching is introduced from the top to the reaction to perform the deposition or the remnant process, the gas injection unit is placed on the upper portion of the reaction chamber so that the reaction gas can be uniformly distributed in the crystal. The entire surface of the circle. However, in this related art, a nitride film for preventing the scattering reflection of the base pattern of the photosensitive film is defined, but it causes the pattern of the photosensitive film which is subsequently etched to collapse. Furthermore, when the wafer size becomes large, the gas entraining unit cannot uniformly inject the reaction gas over the entire surface of the wafer. 1 is a conceptual cross-sectional view showing a related art semiconductor manufacturing apparatus. 2 is a perspective view of a related art shower head and baffle. Referring to FIG. 1 and FIG. 2', a semiconductor manufacturing apparatus includes a reaction chamber having a reaction space 10, and a heater block 20 disposed at the bottom of the reaction chamber 1 to allow the wafer 21 to be placed thereon. a showerhead unit 30 arranged on the reaction chamber 10 to supply a reaction gas to the reaction chamber 1 , a plurality of rows arranged on both sides of the reaction chamber 1 and between the heating block 2〇 and the head unit 3〇 The air holes 40 and the pump interface 42 for discharging the non-reactive gas through the exhaust holes 40 out of the reaction chamber 10. Further, a gate valve (not shown) is molded on the side surface of the reaction chamber 10. In addition, an additional plasma generating unit is arranged to generate plasma in the reaction chamber. The related art head unit 30 includes a gas supply hole 31 into which a reaction gas can be injected, a head 33 that latches the reaction gas supply hole 31, and a pre-made baffle 32 mounted on the head 33, wherein the baffle 32 has the same nozzle 7 1359444 Revision date: October 3, 2010 is the Chinese manual No. 95116733. The size is corrected without a scribe line to uniformly inject the reaction gas into the nozzle 33. In this head unit 30, the 'baffle 32' will be shaped the same as the size of the head 33. Therefore, the large amount of time and cost required for periodic and occasional maintenance of the equipment can cause problems. That is, in the case of the arc treatment during the process, the head 33 and the prefabricated shutter 32 mounted on the head 33 are affected and thus damaged. Accordingly, the baffle 32 should be interchanged with the head 33. Further, in the case where the shutter 32 is disassembled and then combined in the head 33, the combined state of the shutters may be changed by the skill of the worker. Accordingly, the maintenance time is made longer due to gas contamination in the shutter 32 and the head 33 in the head unit 30 or the generation of the arc of the electric pad, so that the operation rate and productivity of the apparatus are lowered. Furthermore, it also generates a large maintenance cost. Further, the method of manufacturing a film using the related art semiconductor manufacturing apparatus also has the following problems. That is, the reaction gas is introduced through the gas supply hole 31 of the head unit 3's and is uniformly supplied to the entire inner space of the head 33 by the means of the shutter 32. Thereafter, the reaction gas is uniformly injected into the reaction chamber 10 via the head 33. At this time, the low-temperature reaction gas is again introduced to the wafer (which is stabilized at the film formation temperature) so that the temperature of the wafer is slightly lowered. That is, there is a time lag while the low temperature reaction gas passes through the baffle 32 and the showerhead 33, so that the temperature in the reaction chamber 10 is immediately lowered, and the film is preferably at a stable temperature after a period of time. Lower deposition. Furthermore, in the related art semiconductor manufacturing apparatus, the vent hole 4 〇 and the pump interface 42 are arranged in the reaction chamber 8 between the head unit 30 and the heating block 2 为 for the first syllabary (7) No. 3 The side wall of this correction date and the 3rd day of the year is corrected, and the remaining reaction gas in the reaction chamber 1〇 and other products during the reaction are removed. However, in the example of the large-sized device, complete removal of the unreacted gas may be performed slowly in the edge of the heating block 2〇 and the unreacted gas may not be uniformly distributed when the reaction gas is removed only via the side surface of the reaction chamber Remove. Accordingly, it becomes quite difficult to form a high-quality film having a uniform thickness on the wafer 21 when the unreacted gas is again reacted on the wafer 21. Furthermore, it is difficult to confirm the uniform distribution of the reaction gas. That is, it is not easy to control the distribution of the reaction gas in accordance with the increase or decrease of the reaction gas injected into the reaction chamber 1〇. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is therefore an object of the present invention to provide an exhaust system, a semiconductor manufacturing apparatus, and a method of fabricating a film using the same, wherein an optimized baffle (provided in the introduction of a reactive gas) The size of the nozzle to the nozzle of the large-sized device is sized to quickly and evenly distribute the reaction gas throughout the internal space of the showerhead and minimize the time it takes to distribute the gas to the wafer. In addition, the reaction gas removal path is modified. The uniformity of the film can be improved by easily removing the reaction gas in the reaction chamber and other products at the time of the reaction and uniformly distributing the reaction gas. SUMMARY OF THE INVENTION It is an object of the present invention to provide a gas injection system that includes a gas supply, a baffle and a showerhead. The gas supply device includes a gas supply hole, and the gas can be supplied through the gas supply hole, the baffle is combined with the gas supply hole and has the same size or larger than the gas supply hole, and the baffle is placed under the gas supply hole to be predefined In the distance position, the spray head is disposed below the baffle and is used to uniformly inject gas into the reaction chamber. ^444^444 Amendment date: October 3, 100 is the Chinese manual No. 95116733 without scribe correction. When the size of the gas supply hole is 1, the size of the baffle is preferably in the range of 1.0 to 10.0. The #板 is preferably combined with the gas supply hole through the refining and fixing process. The baffle can be shaped. The g-shaped plate, the flat plate having the conical or hemispherical upper surface or the flat plate formed on at least the upper surface thereof - a portion of the irregular pattern. A further object of the present invention is to provide an exhaust system comprising an exhaust gas, an exhaust gas conduit, and an exhaust system. The exhaust unit includes a vent hole in which the body is guided through the vent hole. The exhaust guide pipe is used to guide the gas to be discharged to the discharge hole. The exhaust pump is coupled to the exhaust guide tube. The exhaust sheet 70 is preferably a thin plate having a curved or inclined surface on its edge, and a plurality of vent holes are constructed on the curved or inclined surface. It is still another object of the present invention to provide a semiconductor manufacturing apparatus including a reaction to, a head unit, a heating block and a pump interface. The nozzle unit is used for guiding the pre-mosquito gas to the reaction chamber via the gas supply hole, and the nozzle includes a baffle plate which is combined with the domain of the hole and the baffle plate has the same or the gas supply hole. The size is placed in a position that is pre-turned below the gas supply hole. The heating block is provided below the head unit with a circle placed thereon. The interface is placed under the heating block and is supplied with several vents. The showerhead unit preferably includes a gas supply, a baffle and a showerhead. The gas enthalpy device, including the gas supply hole 'gas, can be lifted through the gas supply hole, and the baffle 结合 is coupled to the gas supply hole through the splicing process. The spray head is disposed below the riser and is used to uniformly inject gas into the reaction chamber. 1359444 Revision date: October 3, 100 is the Chinese manual No. 95116733. There is no scribe correction. When the size of the gas supply hole is 1, the size of the baffle is preferably in the range of 1.0 to 10.0, and is in the block. The distance between the plate and the gas supply hole is preferably in the range of 0.1 to 0.2 cm. The pump interface includes an exhaust unit, an exhaust guide tube, and an exhaust pump. The exhaust sheet X is shaped as a thin plate having a curved or inclined surface on its edge and a venting opening is formed on the curved or inclined surface, wherein the gas is introduced through the venting opening. The exhaust guide pipe guides the gas to be exhausted to the exhaust hole by U. The exhaust pump is connected to the exhaust guide. The heating block preferably includes a heated plate support formed of an AIN material, a heating element, and a temperature sensor; and the heated block can perform temperature control in the range of 400 to 600 degrees Celsius. Another object of the present invention is to provide a method of fabricating a semi-body film using a semiconductor manufacturing apparatus, wherein the semiconductor manufacturing apparatus includes a reaction chamber, a head unit, a heating block and a pump interface, and the head unit is used for injecting through the gas supply hole The introduced pre-defined gas is introduced into the reaction chamber, and the shower head unit includes a baffle combined with the gas supply hole, the baffle is combined with the gas supply hole and has the same or larger size than the gas supply hole, and the baffle is placed At a pre-defined distance from the gas supply aperture, a heating block is provided below the showerhead unit to allow the wafer to be placed thereon. Pumping: is placed below the heating block and is provided with several vents The method includes: placing a wafer on a heating block in the reaction chamber and then heating the wafer placed on the heating block; forming a film on the wafer by supplying a processing gas to the reaction through the head unit; And removing impurities via the pump interface. Preferably, the wafer is heated to a temperature of 400 to 6 degrees Celsius and 11 1359444. Revision date: October 3, 100 is the number 9511733 Chinese specification without a sizing correction and the processing gas will be made of plasma. The device is activated. The above and other objects, features, and advantages of the present invention will become more fully understood from However, it is not intended to limit the invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Define the scales. In ®, the same components are numbered in (4) numbers. 3 is a conceptual cross-sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 4A is an enlarged view of a portion A of FIG. 3, and FIGS. 5A to 5E and 6A to 6C are diagrams showing a concept of a baffle according to an embodiment of the present invention. Cross-sectional view, Figure 7 is a conceptual schematic diagram showing a pump interface in accordance with an embodiment of the present invention. Referring to FIGS. 3 through 7, the semiconductor manufacturing apparatus of the present invention includes a reaction chamber 110, a showerhead unit 130, a heating block 120, and a pump interface 14A, wherein the reaction chamber 110 has a predefined reaction space and a predefined bottom curved surface. The head unit 130 includes a baffle 132 combined with a gas supply hole 131 to inject oxygen into the reaction chamber no, and a heating block 12 is disposed under the head unit 130 to allow the wafer 121 to be placed thereon, the pump interface 140 includes a plurality of venting holes 142 shaped to the curved bottom surface of the reaction chamber 110. The semiconductor manufacturing apparatus further includes a gate valve (not shown) for controlling opening and closing of the reaction chamber 11A, and the wafer 121 is loaded onto or removed from the heating block 120 through the gate valve. Further, the pressure in the reaction chamber 11 () is kept fixed by the device of the gate valve. In addition, the 'semiconductor manufacturing equipment includes an additional pressure controller (not shown) and an additional plasma generator (not shown 12 is No. 95116733 Chinese manual no slash correction this revision period: 1 year 1 month 3 days Show) wherein an additional pressure controller is used to maintain the reaction chamber 11 在 under a fixed internal ink force, and an additional plasma generator is used to generate plasma in the reaction chamber 110. Further, the reaction chamber 110 is opened upward and a reaction chamber cover (not shown) is further provided to cover the open upper side of the reaction chamber 110. Furthermore, the showerhead unit is constructed in a predetermined position in the reaction chamber. Of course, the reaction chamber 11 can be constructed as a single unit or divided into an upper reaction chamber and a lower reaction chamber. An additional jack pin (not shown) for loading and unloading the wafer 121 is provided in the heating block 12G, and a drive shaft (not shown) for rotating the heating block U0 is provided. At the bottom of the heating block 12〇. Further, a sensor for measuring the temperature of the force σ hot block 12G is additionally provided. Of course, the heating block itself can move up and down. The heating block 120 preferably has the same position as the Crystal® 121. More preferably, the heating block 120 is constructed to be larger than the wafer 121. Furthermore, one or more wafers 121 will be placed on the heating block 120. The heating block 12 includes a heating plate 122 and a support 124, which are made of material. In addition, the heating element 126* is mounted in the heating zone and provides temperature sensing for sensing the heating temperature of the wafer. At this time, the heating coil is preferably used as a heating element. Preferably, a single heating coil is continuously and uniformly arranged over the entire heating plate 122. Go to Miao, ^oQ „ · Tian Ran, the invention is not limited to this, all kinds of heating structure and the entire area of the ship 12G. It is better to add the "," & block 120 will produce the peak of the media ^ seat about Heat from 100 to 700 degrees Celsius and maintain the heat generated. In other words, the scorpion 疋 has a heat of 400 to 600 ° C. The heat can be applied to 1354944. Date of revision: October 3, 2010 is No. 95116733 Chinese manual without scribe correction to wafer 121 to increase will be placed The strength of the film on wafer 121. As shown in FIG. 4, the head unit 13A includes a gas supply hole 131 that can supply a gas, a baffle 132 that is coupled to the end of the gas supply hole 131 via a fusion and gas supply hole 131, and is disposed at the baffle 132. Below the nozzle η] for uniformly injecting gas into the reaction chamber no. It is preferable that the shutter 132 be fabricated in an optimum size for the size of the gas supply hole 13i. That is, the size of the baffle 132 is optimized such that the reaction gas can be uniformly distributed throughout the entire internal space of the showerhead 133 and the time required for the reaction gas to reach the substrate via the showerhead 133 is minimized to stabilize the reaction temperature (Celsius The time required from 400 to 600 degrees is minimal. Since the reaction gas supplied through the gas supply hole 131 collides with the baffle 132 at least once, the reaction gas flowing straight forward through the gas supply hole 131 is uniformly provided over the entire area of the shower head 133. At this point, the size of the baffle is preferably reduced. That is, assuming that the size T1 of the gas supply hole 131 is i, the size T2 of the baffle 132 is preferably in the range of 1.0 to 1 〇. More preferably, the size T2 of the striker 132 is in the range of 1.5 to 5.5. Further, the distance H1 between the bottom end of the gas supply hole 131 and the baffle 132 is preferably in the range of 0.1 to 20 cm. The above range may vary depending on the size of the gas supply hole, the flow rate, and the size of the baffle. The baffle 132 can be circular, elliptical or polygonal. Of course, the shape of the seesaw 132 is not limited to this. Any shape can be used as long as the gas supplied from the gas supply hole 131 can be uniformly injected into the head 133. As shown in Figure 4, the baffle 132 is preferably in the form of a flat plate. That is, block 1359444 Revision date: October 3, 100 is the Chinese manual No. 95116733. There is no scribe correction. The best shape of this board is a circular plate. Of course, as shown in Figs. 5A to 5E, various patterns may be constructed to be conically constructed or curved on the upper surface of the flat plate or the flat plate so that the gas can be uniformly distributed. That is, the flat plate as shown in Fig. 5A can be constructed together with the upper conical surface. In other words, the flat plate can be manufactured in the shape of a bamboo hat. As shown in Fig. 5B, the flat plate can also be constructed with the upper curved surface. Additionally, a predefined pattern can be constructed on the surface of the baffle 132. As shown in Fig. 5C, the irregular shape can be constructed on the entire upper surface of the flat plate.
如圖5D所示’不規則形狀可建構在平板的侧面。如圖5E 所示’具有規則圖樣的不平坦圖形也可建構在平板的整個 上表面。 上述形狀與圖樣可提供暴露從氣體供應孔131提供的 氣體的表面的至少一部分。暴露氣體的表面可以以圖6A 所示的螺旋形狀、圖6B所示的數個螺旋或圖6(：所示的數 個不規則圖樣來製造。 如上所述’擋板132的尺寸會減少並且暴露至氣體的 表面也會修正，以致於氣體可以均勻地注入在喷頭133的 上表面。 此外，擋板132會與氣體供應孔131結合在一起。也 就是’如圖所示氣體供應孔131與擋板132會使用耦接元 件整體地彼此熔接，此耦接元件是作為額外延伸桿以允許 擋板132與氣體供應孔131分開。當然，孔與擋板可透過 螺栓來彼此整體地輕接。此時，只要輕接元件不阻礙氣體 •經由擋板132注入，用於耦接擋板132與氣體供應孔131 的輕接元件可以作各種的改變。也就是，擋板132與氣體 15 。乃444 修正日期:1〇〇年10月3曰 爲第95116733號中文說明書無劃線修正本 <· 供應孔131可使用單一耦接元件或數個耦接元件來彼此耦 接°基此’由於當拆開噴頭單元13〇時擋板132不需要獨 立分開，所以維護成本可以降低。再者，在設備定期維護 期間交換擋板132與氣體供應孔丨31所需的時間可以減少。 在此實施例中’泵接口 14〇是建構在反應室11〇的底部 (亦即加熱區塊的底部）以致於未反應卻留在反應室n〇 中的氣體可以均勻地從反應室11()中排除。泵接口 14〇包 括建構在反應室110的底表面的排氣孔142以允許未反應氣 體通過此孔’泵接口 140還包括配置在反應室11〇的外部周 圍（其是排氣孔142建構的地方）的排氣導引管143，泵接 口 140更包括建構在排氣導引管⑷的一部分中的泵⑷以將 氣體排出至外部。 在溥膜形成製程之後，未反應氣體與反應時的其他生 成物會留在大尺寸晶圓121上，但根據本發明其可經由在 反應室110的内牆與加熱區塊120邊緣之間的小縫藉由泵 接口 140的裝置來在加熱區塊120下方被移除。在此，在向 下排出期間所產生的璇渦現象可藉由允許反應室〗以彎 曲，表面以及在彎曲底表面中建構排氣孔142來避免。也 就疋，以側壁與底表面不會彼此垂直而以預先定義角度彎 曲與傾斜方式來建構反應室110的底部，並且排氣孔142 會鑽過反應至的考曲表面。排氣孔142不限於置於此，其 可建構在加熱區塊120的底部的任何區域。再者，排氣孔 142可以規則間隔均勻地排列並且維持固定的尺寸。'當 然’排氣孔142也可以各種尺寸以各種_來排列。排^ 1359444 修正日期:100年10月3曰 爲第95116733號中文說明書無劃線修正本 孔較佳的尺寸是在1至100毫米範圍内並且排氣孔之間的 平均間隔最好是在1至100毫米範圍内。此些排氣孔能夠 進行有效排氣處理。 本實施例的排氣孔142可以塑形為額外平板，其可依 次排列至反應室110的底部或者與反應室11〇結合在一起。 前述本實施例的半導體製造裝置可以以單一反應室的 型式來布置並且使用在半導體製造製程中。另外，數個反 應至也可以以組合型式與另一個反應室連結。也就是，本 發明的半導體製造裝置在放置晶圓的部分更包括載入鎖以 及用以從载入鎖搬運晶圓至反應室的搬運架。數個反應室 會藉由閘閥的裝置與另一個反應室連結以保護内部環境。 以下將詳細描述本實施例的半導體製造裝置的運作。 在閘閥打開之後’置於載入鎖上的晶圓121會藉由搬 運架置於本實施例的反應室110 (其包括預先定義反應空 間）中的加熱區塊12〇上。在閘閥關閉之後，在反應室11〇 中的塵力會調整至沈積壓力並且加熱區塊12〇會加熱至攝 氏400至600度的沈積溫度。此時，需要一段穩定來允許 晶圓穩定在上述溫度以進行後續製程。 在此期間，外部沈積氣體會透過喷頭單元130均勻地 喷麗至反應室110。此時，沈積氣體會透過氣體供應孔131 注入並且由氣體供應孔131導入的氣體會藉由與孔結合在 一起的檔板132的裝置來均勻地散佈在喷頭133上。在本 實施例中’由於擋板132會以最佳尺寸與氣體供應孔ι31 結合在一起’所以能夠最小化沈積氣體喷灑與通過喷頭單 17 1359444 修正日期:1〇〇年10月3日 爲第95116733號中文說明書無劃線修正本 元130所花的時間並且之後到達基質。因此，在反應室ι10 中改變的瞬間溫度可在沈積氣體注入期間最小化^例如， 在喷頭單元130的擋板132以大於氣體供應孔1.2至2.0 倍的大小製作的案例中’直線通過氣體供應孔131移動的 氣體會碰撞擋板132並且之後以水平方向散佈。此外，由 於擋板132的尺寸是小的’所以碰撞擋板132的氣體可在 短時間内到達基質’並且因此在氣體注入期間反應室11〇 溫度輕微改變的時間可以縮短。基此，薄膜沈積的穩定時 間可以縮短。 經由擋板132均勻地散佈在喷頭133上的沈積氣體會 透過喷頭133均勻地噴灑至反應室11〇〇此時，氣體到達 基質所花的時間以及在氣體注入期間反應室内溫度輕微改 變的時間會根據沈積氣體的注入量與注入率而有所不同。 再者，氣體注入反應室110的速度也可被改變並且經由噴 頭133注入氣體的均勻度也可被控制。根據將形成在晶圓 121上的薄膜各種氣體都可作為沈積氣體。 如上所述，使用反應室110中的加熱區塊12〇可以使 晶圓121的溫度會穩定在攝氏400至600度的範圍内。較 佳的是電漿會產生在反應室中以沈積薄膜在晶圓121上。 當然’薄膜可在無產生電漿下沈積在晶圓121上。在完成 薄膜沈積製程後’剩餘在反應室11〇中的未反應氣體與反 應時的其他生成物會經由配置於加熱區塊120底部的泵接 口 140來移除。也就是，在反應程序期間或反應程序之後，反 應時的其他生成物會留在大尺寸晶圓121上並且未反應氣 18 1359444 修正日期:100年10月3曰 爲第95116733號中文說明書無劃線修正本 體會在加熱區塊120之上。因此，在反應程序完成之後， 此反應時的其他生成物與未反應氣體會被均勻地與完全地 移除。因此在本實施例中，反應時的其他生成物與未反應 氣體會被吸至反應室110的底部（亦即放置晶圓121的加 熱區塊120的底部區域）以致於可以被均勻地移除。由於 是向下而非向上或經由側壁排出，所以可更有效地移除氣 體。此時，反應時的其他生成物與未反應氣體會經由在加 熱區塊120與反應室no的内壁之間的預先定義間隔排出 至置於加熱區塊120的底部的泵接口 140。期間，在本實施 例中’包括數個排氣孔142的圓形與輕微傾斜平板會排列至 反應室110的底部以防止當氣體在加熱區塊12〇之下排出 時所發生的氣體旋渴現象。也就是，平板是在兩個邊緣以 預先定義彎曲表面來建構並且數個排氣孔142是建構在彎 曲表面上’所以可以避免排氣的漩渦現象。 藉由泵接口 140的裝置可以避免因沈積氣體的非均勻排 氣所造成的薄膜不規則。 如上所述’在未反應氣體與反應時的其他生成物移除 之後，閘閥會打開並且置於加熱區塊的晶圓會由搬運架從 反應室取出並且置於載入鎖上。 使用本實施例的半導體製造裝置的薄膜形成製程可最 小化在反應室中溫度的下降並且允許反應氣體的溫度梯度 均勻在整個基質上’以致於可以解決反應氣體不均勻分佈 所造成度問題以改善薄膜的均勻度。再者，在設備定期與 不定期維護案例中’由於使用與氣體供應孔結合在一起的 19 1359444 修正日期:1〇〇年10月3曰 爲第95116733號中文說明書無劃線修正本 小擋板所以可以降少維護時間與成本，並且不具此技術的 人員也可輕易的完成維護。 各種半導體薄膜皆可使用上述本實施例的半導體製造 裝置來製作n以下將參考圖式詳細說明製造用作為用以形 成半導體元件圖樣的罩幕膜的氮化物膜的方法。以下將以 大尺寸晶圓（300毫米）來描述。 圖8是根據本發明實施例綠示使用半導體製造裝·置製 造半導體元件的方法的概念剖面圖。 如圖8(a)所示’硬罩幕膜220會在晶圓21〇上形成， 並且依序覆蓋抗反射薄膜230與感光膜在硬罩幕膜22〇 上。之後，感光膜會圖案化並形成為感光膜圖樣24〇〇 如圖8(b)所示，會使用感光膜圖樣24〇來圖案化硬罩 幕膜220。如圖8(c)所示，會執行使用硬罩幕臈22〇作為 蝕刻罩幕的蝕刻製程以實行圖案化程序，亦即部分地移除 晶圓210。儘官本實施例是描述形成硬罩幕膜來圖案 化晶圓210，但本發明不限於此。也就是，硬 2〇 可用於所有製作半導體元件的製程。 、 此硬罩幕膜220 ▼以氮化物膜、氧化物薄膜或其混和 物來形成。此硬罩幕膜22G可作輕料幕以防止在感光 膜倒塌所造成的下方蝕刻同時蝕刻晶圓21〇。因此，用作 為硬罩幕膜220的氮化物應相較於晶圓21〇具有高蝕刻選 擇性’並且氮化物膜本身應更硬。此外，倘若要^用2 物膜作為蝕刻罩幕時則氮化物膜應該在固定厚度下製作。 為了形成硬的氮化物膜，氮化物應該在攝氏4〇〇至_度 20 1359444 修正日期:100年10月3日 爲第95116733號中文說明書無劃線修正本 的高溫下沈積。再者，為了在大尺寸晶圓21〇上形成均勻 厚度且厚的的氮化物膜，將形成氮化物膜材料並施予至晶 圓的氮化物氣體應均勻地喷灑。倘若此硬罩幕膜22〇是使 用在本實施例的半導體製造裝置中時，則可滿足兩個上 條件。 此外，以下將描述處理清潔根據本發明的半導體製造 裝置的程序。 " 一般來說，倘若在反應室中執行薄膜沈積製程時，薄 臈會fe微地沈*積在反應室的内牆與喷頭的表面。 當後續程序成功執行之後由於熱膨脹係數的差異所以 熱壓力會產生在沈積在喷頭上的薄膜上。基此，當執行後 續製程薄膜會部分地分離並且在薄膜中會產生雜質。為了 解決此問題，根據本發明將使用電漿產生器經由氣體供應 管、擋板與噴頭提供與注入清潔源，電漿產生器是用作為 在反應室的上部控制電漿元件的遠端以引導蝕刻製程。基 此，可以移除剩餘在反應室的内牆與喷頭表面的薄膜。此 時，NR可用作為清潔源氣體，並且NR電漿蝕刻也可使 用此來執行。 如上所述，使用與氣體供應孔結合在一起的小尺寸擋 板可以使反應氣體可均勻地分佈在喷頭上並且經由噴頭均 勻地且快速地注入在置於加熱器的基質上。 、 再者，反應氣體經由喷頭到達基質所化的時間也可最 小化以將使得穩定反應溫度所需的時間最小。 再者，設備的維護時間與成本也可降低。 21 1359444 爲第95116733號中文說明書無劃線修正本修正日期:⑽年l〇月3曰 此外’反應時的其他生成物可藉由改變用以經由基質 的底部移除反應氣體的路徑而輕易地移除。因此’薄膜的 均勻度可藉由均勻地分佈反應氣體而改善。 【圖式簡單說明】 圖1是繪示相關技術半導體製造裝置的概念剖面圖° 圖2是相關技術喷頭（showerhead)與擔板（baf0e> 的透視圖。 · 圖3根據本發明實施例繪示半導體製造裝置的概念杳lJ 面圖+。 圖4是顯示圖3的A部分的放大圖。 圖5A至5E與6A至6C是根據本發明實施例繪示擋 板的概念剖面圖。 圖7是根據本發明實施例顯示泵接口的概念示意圖。 圖8是根據本發明實施例繪示使用半導體製造裝置製 造半導體元件的方法的概念剖面圖。 【主要元件符號說明】 1〇 ·反應室（chamber) 2〇 ·加熱（heater)區塊 21 .晶圓 30 :噴頭單元 31 :氣體供應孔 32 :擋板 33 :噴頭 4〇 :排氣孔 22 1359444 修正日期:1〇〇年10月3日 • 爲第95116733號中文說明書無劃線修正本 42 :泵接口 110 :反應室 120 :加熱區塊 121 :晶圓 122 :加熱板 124 :支撐物 126 :加熱元件 130 :噴頭單元 # 131 :氣體供應孔 132 :擋板 133 :噴頭 140 :泵接口 142 :排氣孔 143 :排氣導引管 144 :泵 210 :晶圓 φ 220 :硬罩幕膜 230 :抗反射薄膜 240 ··感光膜圖樣 23As shown in Fig. 5D, the irregular shape can be constructed on the side of the flat plate. An uneven pattern having a regular pattern as shown in Fig. 5E can also be constructed on the entire upper surface of the flat plate. The above shape and pattern may provide at least a portion of the surface that exposes the gas supplied from the gas supply hole 131. The surface on which the gas is exposed may be manufactured in a spiral shape as shown in FIG. 6A, a plurality of spirals as shown in FIG. 6B, or a plurality of irregular patterns shown in FIG. 6 (the above-described 'the size of the baffle 132 is reduced and The surface exposed to the gas is also corrected so that the gas can be uniformly injected into the upper surface of the head 133. Further, the baffle 132 is combined with the gas supply hole 131. That is, the gas supply hole 131 as shown. The baffle 132 is integrally welded to each other using a coupling member that acts as an additional extension rod to allow the baffle 132 to be separated from the gas supply hole 131. Of course, the hole and the baffle can be integrally connected to each other through the bolt. At this time, as long as the light-contacting member does not hinder the gas and is injected through the shutter 132, the light-contacting member for coupling the shutter 132 and the gas supply hole 131 can be variously changed. That is, the shutter 132 and the gas 15 are. 444 Revision Date: October 3, 2010 is No. 95116733 Chinese Manual No Scribe Revisions <· Supply hole 131 can be coupled to each other using a single coupling element or several coupling elements. As when disassembled When the head unit 13 is not required to be separately separated, the maintenance cost can be reduced. Further, the time required to exchange the shutter 132 and the gas supply port 31 during periodic maintenance of the apparatus can be reduced. In this embodiment The pump port 14 is constructed at the bottom of the reaction chamber 11 (i.e., at the bottom of the heating block) so that the unreacted gas remaining in the reaction chamber n can be uniformly removed from the reaction chamber 11 (). 14〇 includes a venting opening 142 constructed in a bottom surface of the reaction chamber 110 to allow unreacted gas to pass through the orifice. The pump interface 140 further includes an outer portion disposed around the reaction chamber 11〇 (which is where the venting opening 142 is constructed). The exhaust gas guiding tube 143, the pump interface 140 further includes a pump (4) constructed in a part of the exhaust gas guiding tube (4) to discharge the gas to the outside. After the bismuth film forming process, the unreacted gas and other generation during the reaction The material will remain on the large size wafer 121, but it may be under the heating block 120 via the slit between the inner wall of the reaction chamber 110 and the edge of the heating block 120 by means of the pump interface 140 in accordance with the present invention. Was removed Here, the vortex phenomenon generated during the downward discharge can be avoided by allowing the reaction chamber to be curved, the surface, and the vent hole 142 in the curved bottom surface. That is, the side wall and the bottom surface are not The bottom of the reaction chamber 110 is constructed to be perpendicular to each other and bent and inclined at a predetermined angle, and the vent hole 142 is drilled through the test surface to which the reaction is applied. The vent hole 142 is not limited thereto, and may be constructed in the heating zone. Any area of the bottom of the block 120. Further, the venting holes 142 may be evenly spaced at regular intervals and maintained in a fixed size. 'Of course' the venting holes 142 may also be arranged in various sizes in various sizes. Rows 1359444 Revision date: The specification of the hole is preferably in the range of 1 to 100 mm and the average interval between the vent holes is preferably in the range of 1 to 100 mm. These vents allow for efficient exhaust treatment. The venting opening 142 of the present embodiment may be shaped as an additional flat plate which may be sequentially arranged to the bottom of the reaction chamber 110 or to be combined with the reaction chamber 11A. The foregoing semiconductor manufacturing apparatus of the present embodiment can be arranged in a single reaction chamber type and used in a semiconductor manufacturing process. Alternatively, several reactions can be combined with another reaction chamber in a combined pattern. That is, the semiconductor manufacturing apparatus of the present invention further includes a load lock and a carrier for transporting the wafer from the load lock to the reaction chamber at the portion where the wafer is placed. Several reaction chambers are connected to another reaction chamber by means of a gate valve to protect the internal environment. The operation of the semiconductor manufacturing apparatus of the present embodiment will be described in detail below. After the gate valve is opened, the wafer 121 placed on the load lock is placed on the heating block 12 in the reaction chamber 110 of the present embodiment (which includes the predefined reaction space) by the transport rack. After the gate valve is closed, the dust force in the reaction chamber 11A is adjusted to the deposition pressure and the heating block 12 is heated to a deposition temperature of 400 to 600 degrees Celsius. At this point, a period of stabilization is required to allow the wafer to stabilize at the above temperatures for subsequent processing. During this time, the external deposition gas is uniformly sprayed through the head unit 130 to the reaction chamber 110. At this time, the deposition gas is injected through the gas supply hole 131 and the gas introduced from the gas supply hole 131 is uniformly spread on the shower head 133 by the means of the baffle 132 combined with the hole. In the present embodiment, 'because the baffle 132 will be combined with the gas supply hole ι31 in an optimum size', it is possible to minimize the deposition of the deposition gas and the passage of the nozzle through the nozzle. 17 1359444 Revision date: October 3, 1 For the Chinese manual No. 95116733, the time taken for the original element 130 is corrected without a scribe line and then reaches the substrate. Therefore, the instantaneous temperature changed in the reaction chamber ι10 can be minimized during the deposition of the deposition gas. For example, in the case where the baffle 132 of the head unit 130 is made larger than the gas supply hole by 1.2 to 2.0 times, the line passes straight through the gas. The gas moved by the supply hole 131 collides with the baffle 132 and is then spread in the horizontal direction. Further, since the size of the baffle 132 is small 'so that the gas colliding with the baffle 132 can reach the substrate in a short time' and thus the time during which the temperature of the reaction chamber 11 轻微 is slightly changed during gas injection can be shortened. Accordingly, the stabilization time of film deposition can be shortened. The deposition gas uniformly distributed on the shower head 133 via the baffle 132 is uniformly sprayed to the reaction chamber 11 through the showerhead 133. At this time, the time taken for the gas to reach the substrate and the temperature in the reaction chamber are slightly changed during the gas injection. The time will vary depending on the amount of deposition of the deposition gas and the injection rate. Further, the velocity at which the gas is injected into the reaction chamber 110 can also be changed and the uniformity of the gas injected through the nozzle 133 can also be controlled. Various gases according to the film to be formed on the wafer 121 can be used as the deposition gas. As described above, the use of the heating block 12 in the reaction chamber 110 allows the temperature of the wafer 121 to be stabilized in the range of 400 to 600 degrees Celsius. Preferably, plasma is generated in the reaction chamber to deposit a film on wafer 121. Of course, the film can be deposited on the wafer 121 without plasma generation. The unreacted gas remaining in the reaction chamber 11〇 and other products in the reaction after the completion of the thin film deposition process are removed via the pump interface 140 disposed at the bottom of the heating block 120. That is, during the reaction process or after the reaction process, other products at the time of the reaction may remain on the large-sized wafer 121 and the unreacted gas is 18 1359444. The date of revision: October 3, 100, is No. 95116733. The line correction body will be above the heating block 120. Therefore, after the completion of the reaction procedure, the other products and unreacted gases at the time of the reaction are uniformly and completely removed. Therefore, in the present embodiment, other products and unreacted gases during the reaction are sucked to the bottom of the reaction chamber 110 (that is, the bottom portion of the heating block 120 where the wafer 121 is placed) so that it can be uniformly removed. . The gas can be removed more efficiently because it is discharged downward rather than upwards or via the side walls. At this time, the other products and unreacted gases at the time of the reaction are discharged to the pump port 140 placed at the bottom of the heating block 120 via a predetermined interval between the heating block 120 and the inner wall of the reaction chamber no. During this embodiment, a circular and slightly inclined flat plate including a plurality of vent holes 142 is arranged to the bottom of the reaction chamber 110 to prevent gas thirst which occurs when the gas is discharged under the heating block 12〇. phenomenon. That is, the flat plate is constructed with two predefined edges on the curved surface and the plurality of vent holes 142 are constructed on the curved surface so that the vortex of the exhaust gas can be avoided. Membrane irregularities due to non-uniform exhaust of the deposited gas can be avoided by the means of the pump interface 140. As described above, after the unreacted gas and other products at the time of the reaction are removed, the gate valve is opened and the wafer placed in the heating block is taken out of the reaction chamber by the carrier and placed on the load lock. The thin film forming process using the semiconductor manufacturing apparatus of the present embodiment can minimize the temperature drop in the reaction chamber and allow the temperature gradient of the reaction gas to be uniform throughout the substrate so that the problem of uneven distribution of the reaction gas can be solved to improve The uniformity of the film. Furthermore, in the case of regular and unscheduled maintenance of the equipment '19 1359444 due to the use of the gas supply hole, the date of correction: October 3, 2010, No. 95116733 Chinese manual, no marking correction Therefore, maintenance time and cost can be reduced, and maintenance can be easily accomplished by personnel without this technology. Various semiconductor thin films can be produced by using the semiconductor manufacturing apparatus of the above-described embodiment. Hereinafter, a method of manufacturing a nitride film used as a mask film for forming a semiconductor element pattern will be described in detail with reference to the drawings. The following will be described in large size wafers (300 mm). Figure 8 is a conceptual cross-sectional view showing a method of fabricating a semiconductor device using a semiconductor fabrication apparatus in accordance with an embodiment of the present invention. As shown in Fig. 8(a), the hard mask film 220 is formed on the wafer 21, and sequentially covers the anti-reflection film 230 and the photosensitive film on the hard mask film 22A. Thereafter, the photosensitive film is patterned and formed into a photosensitive film pattern 24. As shown in Fig. 8(b), the hard mask film 220 is patterned using the photosensitive film pattern 24?. As shown in Fig. 8(c), an etching process using a hard mask 22 as an etching mask is performed to carry out a patterning process, i.e., partially removing the wafer 210. The present embodiment is described as forming a hard mask film to pattern the wafer 210, but the present invention is not limited thereto. That is, hard 2 〇 can be used for all processes for fabricating semiconductor components. The hard mask film 220 is formed of a nitride film, an oxide film, or a mixture thereof. The hard mask film 22G can be used as a light curtain to prevent etching of the wafer 21 while etching under the photosensitive film collapse. Therefore, the nitride used as the hard mask film 220 should have a higher etching selectivity than the wafer 21A and the nitride film itself should be harder. In addition, if a 2 film is used as the etching mask, the nitride film should be formed at a fixed thickness. In order to form a hard nitride film, the nitride should be in the range of 4 〇〇 to _ degrees 20 1359444. Revision date: October 3, 100 is the high temperature deposition of the Chinese specification No. 95116733 without a scribe line. Further, in order to form a nitride film of uniform thickness and thickness on the large-sized wafer 21, the nitride gas which forms the nitride film material and is applied to the wafer should be uniformly sprayed. If the hard mask film 22 is used in the semiconductor manufacturing apparatus of the present embodiment, two upper conditions can be satisfied. Further, a procedure for cleaning the semiconductor manufacturing apparatus according to the present invention will be described below. " Generally, if a thin film deposition process is performed in the reaction chamber, the thin layer will accumulate on the inner wall of the reaction chamber and the surface of the showerhead. When the subsequent procedure is successfully performed, the thermal stress is generated on the film deposited on the shower head due to the difference in thermal expansion coefficient. Accordingly, when the subsequent process is performed, the film is partially separated and impurities are generated in the film. In order to solve this problem, according to the present invention, a plasma generator is used to supply and inject a cleaning source via a gas supply pipe, a baffle and a showerhead, and the plasma generator is used to control the distal end of the plasma element at the upper portion of the reaction chamber to guide Etching process. Accordingly, the film remaining on the inner wall of the reaction chamber and the surface of the head can be removed. At this time, NR can be used as a cleaning source gas, and NR plasma etching can also be performed using this. As described above, the use of the small-sized baffle combined with the gas supply hole allows the reaction gas to be uniformly distributed on the shower head and uniformly and rapidly injected onto the substrate placed on the heater via the shower head. Furthermore, the time that the reaction gas reaches the substrate via the showerhead can also be minimized to minimize the time required to stabilize the reaction temperature. Furthermore, the maintenance time and cost of the equipment can also be reduced. 21 1359444 is the Chinese manual No. 95116733. There is no slash correction. The date of this revision is: (10) Year 3 months 3 曰 In addition, other products in the reaction can be easily changed by changing the path for removing the reaction gas through the bottom of the substrate. Remove. Therefore, the uniformity of the film can be improved by uniformly distributing the reaction gas. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a conceptual cross-sectional view showing a related art semiconductor manufacturing apparatus. FIG. 2 is a perspective view of a related art shower head and a slab (baf0e>. FIG. 3 is drawn according to an embodiment of the present invention. Fig. 4 is an enlarged view showing a portion A of Fig. 3. Fig. 5A to 5E and 6A to 6C are conceptual cross-sectional views showing a shutter according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 8 is a conceptual cross-sectional view showing a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus according to an embodiment of the present invention. [Description of main component symbols] 1〇·reaction chamber (chamber 2〇·heater block 21. Wafer 30: head unit 31: gas supply hole 32: baffle 33: head 4: vent hole 22 1359444 Revision date: October 3, 1 No. 95116733 Chinese specification without sizing correction 42: pump interface 110: reaction chamber 120: heating block 121: wafer 122: heating plate 124: support 126: heating element 130: nozzle unit #131: gas supply hole 132: baffle 133 : Nozzle 140 : Pump interface 142 : Vent hole 143 : Exhaust guide tube 144 : Pump 210 : Wafer φ 220 : Hard mask film 230 : Anti-reflection film 240 ··Photosensitive film pattern 23