KR100747735B1 - 반도체 제조 장치 - Google Patents

반도체 제조 장치 Download PDF

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Publication number
KR100747735B1
KR100747735B1 KR1020050040009A KR20050040009A KR100747735B1 KR 100747735 B1 KR100747735 B1 KR 100747735B1 KR 1020050040009 A KR1020050040009 A KR 1020050040009A KR 20050040009 A KR20050040009 A KR 20050040009A KR 100747735 B1 KR100747735 B1 KR 100747735B1
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KR
South Korea
Prior art keywords
gas
chamber
exhaust
gas supply
baffle
Prior art date
Application number
KR1020050040009A
Other languages
English (en)
Korean (ko)
Other versions
KR20060117613A (ko
Inventor
박근오
Original Assignee
주식회사 테스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테스 filed Critical 주식회사 테스
Priority to KR1020050040009A priority Critical patent/KR100747735B1/ko
Priority to TW095116733A priority patent/TWI359444B/zh
Publication of KR20060117613A publication Critical patent/KR20060117613A/ko
Application granted granted Critical
Publication of KR100747735B1 publication Critical patent/KR100747735B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020050040009A 2005-05-13 2005-05-13 반도체 제조 장치 KR100747735B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020050040009A KR100747735B1 (ko) 2005-05-13 2005-05-13 반도체 제조 장치
TW095116733A TWI359444B (en) 2005-05-13 2006-05-11 Semiconductor manufacturing apparatus and method f

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050040009A KR100747735B1 (ko) 2005-05-13 2005-05-13 반도체 제조 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070060342A Division KR20070069122A (ko) 2007-06-20 2007-06-20 반도체 제조 장치

Publications (2)

Publication Number Publication Date
KR20060117613A KR20060117613A (ko) 2006-11-17
KR100747735B1 true KR100747735B1 (ko) 2007-08-09

Family

ID=37705059

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050040009A KR100747735B1 (ko) 2005-05-13 2005-05-13 반도체 제조 장치

Country Status (2)

Country Link
KR (1) KR100747735B1 (zh)
TW (1) TWI359444B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240073395A (ko) 2022-11-18 2024-05-27 주식회사 한화 기판 처리 장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101380861B1 (ko) * 2007-11-09 2014-04-03 참엔지니어링(주) 플라즈마 에칭 챔버
TWI430714B (zh) 2009-10-15 2014-03-11 Orbotech Lt Solar Llc 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法
JP5721132B2 (ja) 2009-12-10 2015-05-20 オルボテック エルティ ソラー，エルエルシー 真空処理装置用シャワーヘッド・アセンブリ及び真空処理装置用シャワーヘッド・アセンブリを真空処理チャンバに締結する方法
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
US10316409B2 (en) * 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
KR101494601B1 (ko) * 2013-06-21 2015-02-23 주식회사 테스 가스공급유닛 및 이를 구비한 박막증착장치
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
WO2019027863A1 (en) * 2017-07-31 2019-02-07 Applied Materials, Inc. GAS SUPPLY ELEMENT WITH DEFLECTOR
US11077410B2 (en) 2017-10-09 2021-08-03 Applied Materials, Inc. Gas injector with baffle
WO2019113478A1 (en) 2017-12-08 2019-06-13 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
CN112342528B (zh) * 2019-08-06 2023-02-17 台湾积体电路制造股份有限公司 半导体制程机台及其应用的方法
US11971057B2 (en) * 2020-11-13 2024-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Gas transport system
CN114657643B (zh) * 2020-12-24 2023-10-03 中国科学院微电子研究所 晶片处理设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07189966A (ja) * 1993-12-28 1995-07-28 Mitsubishi Electric Corp スクロール圧縮機
KR20010113315A (ko) * 2000-06-19 2001-12-28 박종섭 샤워헤드 및 이를 이용한 액체 원료 공급 장치
KR20040103216A (ko) * 2003-05-31 2004-12-08 삼성전자주식회사 절연막 증착 장치
KR20050001748A (ko) * 2003-06-26 2005-01-07 엘지.필립스 엘시디 주식회사 화학기상 증착장비

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07189966A (ja) * 1993-12-28 1995-07-28 Mitsubishi Electric Corp スクロール圧縮機
KR20010113315A (ko) * 2000-06-19 2001-12-28 박종섭 샤워헤드 및 이를 이용한 액체 원료 공급 장치
KR20040103216A (ko) * 2003-05-31 2004-12-08 삼성전자주식회사 절연막 증착 장치
KR20050001748A (ko) * 2003-06-26 2005-01-07 엘지.필립스 엘시디 주식회사 화학기상 증착장비

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240073395A (ko) 2022-11-18 2024-05-27 주식회사 한화 기판 처리 장치

Also Published As

Publication number Publication date
TWI359444B (en) 2012-03-01
KR20060117613A (ko) 2006-11-17
TW200710928A (en) 2007-03-16

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