TW200708603A - Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers - Google Patents
Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizersInfo
- Publication number
- TW200708603A TW200708603A TW095110565A TW95110565A TW200708603A TW 200708603 A TW200708603 A TW 200708603A TW 095110565 A TW095110565 A TW 095110565A TW 95110565 A TW95110565 A TW 95110565A TW 200708603 A TW200708603 A TW 200708603A
- Authority
- TW
- Taiwan
- Prior art keywords
- small amount
- chemical mechanical
- polishing
- ppm
- oxidizer
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 6
- 239000000203 mixture Substances 0.000 title abstract 5
- 229910021645 metal ion Inorganic materials 0.000 title abstract 3
- 239000000126 substance Substances 0.000 title abstract 3
- -1 enol compounds Chemical class 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000007800 oxidant agent Substances 0.000 abstract 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 150000003254 radicals Chemical class 0.000 abstract 2
- 239000003082 abrasive agent Substances 0.000 abstract 1
- 229960005070 ascorbic acid Drugs 0.000 abstract 1
- 235000010323 ascorbic acid Nutrition 0.000 abstract 1
- 239000011668 ascorbic acid Substances 0.000 abstract 1
- 239000002738 chelating agent Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66493005P | 2005-03-25 | 2005-03-25 | |
| US67467805P | 2005-04-26 | 2005-04-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200708603A true TW200708603A (en) | 2007-03-01 |
| TWI418618B TWI418618B (zh) | 2013-12-11 |
Family
ID=36581671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095110565A TWI418618B (zh) | 2005-03-25 | 2006-03-27 | 用於具有金屬離子氧化劑之化學機械拋光組成物中的二羥基烯醇類化合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7476620B2 (zh) |
| EP (1) | EP1871855B1 (zh) |
| JP (1) | JP2008536302A (zh) |
| CN (1) | CN101180379B (zh) |
| DE (1) | DE602006013110D1 (zh) |
| TW (1) | TWI418618B (zh) |
| WO (1) | WO2006105020A1 (zh) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US8163049B2 (en) * | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
| US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| US7837888B2 (en) * | 2006-11-13 | 2010-11-23 | Cabot Microelectronics Corporation | Composition and method for damascene CMP |
| US8372305B2 (en) * | 2007-05-24 | 2013-02-12 | Basf Se | Chemical-mechanical polishing composition comprising metal-organic framework materials |
| US20090061630A1 (en) * | 2007-08-30 | 2009-03-05 | Dupont Air Products Nanomaterials Llc | Method for Chemical Mechanical Planarization of A Metal-containing Substrate |
| JP5288097B2 (ja) * | 2008-02-27 | 2013-09-11 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体、化学機械研磨用水系分散体の製造方法および化学機械研磨方法 |
| US8974655B2 (en) * | 2008-03-24 | 2015-03-10 | Micron Technology, Inc. | Methods of planarization and electro-chemical mechanical polishing processes |
| CN101827686B (zh) * | 2008-07-03 | 2013-07-17 | 旭硝子株式会社 | 研磨玻璃衬底的方法、制造玻璃衬底的方法和制造磁盘用玻璃衬底的方法 |
| US9074170B2 (en) | 2008-10-21 | 2015-07-07 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
| US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
| CN103342986B (zh) | 2008-12-11 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液以及使用该研磨液的研磨方法 |
| US8506831B2 (en) * | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
| US8815110B2 (en) * | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
| US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| US8697576B2 (en) * | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
| US7947130B2 (en) * | 2009-10-24 | 2011-05-24 | Wai Mun Lee | Troika acid semiconductor cleaning compositions and methods of use |
| EP2496010A4 (en) | 2009-10-30 | 2013-11-06 | Korea Electronics Telecomm | METHOD FOR TRANSMITTING CONTROL AND TRAINING SYMBOLS IN A MULTI-USER WIRELESS COMMUNICATION SYSTEM |
| WO2011058816A1 (ja) * | 2009-11-12 | 2011-05-19 | 日立化成工業株式会社 | Ｃｍｐ研磨液、並びに、これを用いた研磨方法及び半導体基板の製造方法 |
| KR20120134105A (ko) * | 2010-02-01 | 2012-12-11 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 이를 이용한 화학 기계 연마 방법 |
| US8858819B2 (en) * | 2010-02-15 | 2014-10-14 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a tungsten-containing substrate |
| JP5648567B2 (ja) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| MY164859A (en) * | 2010-09-08 | 2018-01-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
| JP2012079717A (ja) * | 2010-09-30 | 2012-04-19 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
| CN102452036B (zh) * | 2010-10-29 | 2016-08-24 | 安集微电子（上海）有限公司 | 一种钨化学机械抛光方法 |
| JP2013247341A (ja) * | 2012-05-29 | 2013-12-09 | Fujimi Inc | 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法 |
| US8859428B2 (en) | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
| US20140273458A1 (en) * | 2013-03-12 | 2014-09-18 | Air Products And Chemicals, Inc. | Chemical Mechanical Planarization for Tungsten-Containing Substrates |
| US9434859B2 (en) * | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
| CN104371649B (zh) * | 2014-09-28 | 2017-05-10 | 顾泉 | 一种化学机械研磨组合物 |
| US10077381B2 (en) * | 2015-07-20 | 2018-09-18 | Kctech Co., Ltd. | Polishing slurry composition |
| WO2018053630A1 (en) * | 2016-09-20 | 2018-03-29 | National Research Council Of Canada | Ferro-cavitation processes for target metal separation |
| KR102649775B1 (ko) * | 2016-09-28 | 2024-03-20 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 4차 포스포늄 화합물을 포함하는 조성물 및 방법을 사용하는 텅스텐의 화학 기계적 연마 |
| US9984895B1 (en) * | 2017-01-31 | 2018-05-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US20190352535A1 (en) * | 2018-05-21 | 2019-11-21 | Versum Materials Us, Llc | Chemical Mechanical Polishing Tungsten Buffing Slurries |
| JP2021145090A (ja) * | 2020-03-13 | 2021-09-24 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
| KR20230067677A (ko) * | 2020-09-18 | 2023-05-16 | 씨엠씨 머티리얼즈 엘엘씨 | 탄소계 필름의 선택적 연마를 위한 실리카계 슬러리 |
| KR102531445B1 (ko) * | 2020-10-28 | 2023-05-12 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
| CN112920716A (zh) * | 2021-01-26 | 2021-06-08 | 中国科学院上海微系统与信息技术研究所 | 一种用于氮化钛化学机械抛光的组合物及其使用方法 |
| CN113637413A (zh) * | 2021-09-02 | 2021-11-12 | 万华化学集团电子材料有限公司 | 一种硅抛光组合物、制备方法及其应用 |
| CN115433522B (zh) * | 2022-09-26 | 2023-07-04 | 深圳清华大学研究院 | 化学机械抛光液及其抛光方法 |
| CN115584505A (zh) * | 2022-09-28 | 2023-01-10 | 湖南金裕环保科技有限公司 | 不锈钢化学抛光剂、制备方法及应用 |
Family Cites Families (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE657099A (zh) | 1963-12-30 | |||
| FR2604443A1 (fr) | 1986-09-26 | 1988-04-01 | Rhone Poulenc Chimie | Composition de polissage a base de cerium destinee au polissage des verres organiques |
| SU1629353A1 (ru) | 1988-08-17 | 1991-02-23 | Предприятие П/Я В-2750 | Раствор дл виброхимического шлифовани деталей из алюминиевых сплавов |
| US4959113C1 (en) | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| US5981454A (en) | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
| US6546939B1 (en) | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
| US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5700383A (en) | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US20040140288A1 (en) | 1996-07-25 | 2004-07-22 | Bakul Patel | Wet etch of titanium-tungsten film |
| US20040134873A1 (en) | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
| US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| US5916855A (en) | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| US6083419A (en) | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP2002511650A (ja) | 1998-04-10 | 2002-04-16 | フェロー コーポレイション | 化学的−機械的金属表面研磨用スラリ |
| US6635562B2 (en) | 1998-09-15 | 2003-10-21 | Micron Technology, Inc. | Methods and solutions for cleaning polished aluminum-containing layers |
| SG99289A1 (en) | 1998-10-23 | 2003-10-27 | Ibm | Chemical-mechanical planarization of metallurgy |
| SG78405A1 (en) | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
| SG73683A1 (en) | 1998-11-24 | 2000-06-20 | Texas Instruments Inc | Stabilized slurry compositions |
| WO2000039843A1 (fr) | 1998-12-25 | 2000-07-06 | Hitachi Chemical Company, Ltd. | Abrasif cmp, additif liquide pour abrasif cmp et procede de polissage de substrat |
| US6752844B2 (en) | 1999-03-29 | 2004-06-22 | Intel Corporation | Ceric-ion slurry for use in chemical-mechanical polishing |
| GB9920532D0 (en) | 1999-09-01 | 1999-11-03 | Univ Abertay | Method |
| JP4273475B2 (ja) | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6258140B1 (en) | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| US6723691B2 (en) | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6492308B1 (en) | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6299795B1 (en) | 2000-01-18 | 2001-10-09 | Praxair S.T. Technology, Inc. | Polishing slurry |
| CN1200984C (zh) | 2000-01-18 | 2005-05-11 | 普莱克斯.S.T.技术有限公司 | 抛光浆料 |
| JP3945964B2 (ja) | 2000-06-01 | 2007-07-18 | 株式会社ルネサステクノロジ | 研磨剤、研磨方法及び半導体装置の製造方法 |
| US6348440B1 (en) | 2000-08-02 | 2002-02-19 | Betzdearborn Inc. | Method of cleaning a metal surface |
| US6541384B1 (en) | 2000-09-08 | 2003-04-01 | Applied Materials, Inc. | Method of initiating cooper CMP process |
| US6508953B1 (en) | 2000-10-19 | 2003-01-21 | Ferro Corporation | Slurry for chemical-mechanical polishing copper damascene structures |
| US6702954B1 (en) | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
| JP4009986B2 (ja) | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法 |
| US6464568B2 (en) | 2000-12-04 | 2002-10-15 | Intel Corporation | Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing |
| US6326305B1 (en) | 2000-12-05 | 2001-12-04 | Advanced Micro Devices, Inc. | Ceria removal in chemical-mechanical polishing of integrated circuits |
| US6383065B1 (en) | 2001-01-22 | 2002-05-07 | Cabot Microelectronics Corporation | Catalytic reactive pad for metal CMP |
| WO2002067309A1 (fr) | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Pate a polir et procede de polissage d'un substrat |
| US6399492B1 (en) | 2001-03-15 | 2002-06-04 | Micron Technology, Inc. | Ruthenium silicide processing methods |
| JP4439755B2 (ja) * | 2001-03-29 | 2010-03-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いたメモリーハードディスクの製造方法 |
| US20030082101A1 (en) | 2001-06-11 | 2003-05-01 | Cavalier Discovery | Accelerators for increasing the rate of formation of free radicals and reactive oxygen species |
| CN100378145C (zh) * | 2001-06-21 | 2008-04-02 | 花王株式会社 | 研磨液组合物 |
| US6589100B2 (en) | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
| US7077880B2 (en) * | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
| US6743267B2 (en) * | 2001-10-15 | 2004-06-01 | Dupont Air Products Nanomaterials Llc | Gel-free colloidal abrasive polishing compositions and associated methods |
| WO2003044123A1 (en) | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
| US6620215B2 (en) | 2001-12-21 | 2003-09-16 | Dynea Canada, Ltd. | Abrasive composition containing organic particles for chemical mechanical planarization |
| US6884723B2 (en) | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
| KR100444308B1 (ko) | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| US6527622B1 (en) | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US20030224958A1 (en) * | 2002-05-29 | 2003-12-04 | Andreas Michael T. | Solutions for cleaning polished aluminum-containing layers |
| US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| US6893476B2 (en) * | 2002-12-09 | 2005-05-17 | Dupont Air Products Nanomaterials Llc | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
| US6806193B2 (en) | 2003-01-15 | 2004-10-19 | Texas Instruments Incorporated | CMP in-situ conditioning with pad and retaining ring clean |
| US7201784B2 (en) * | 2003-06-30 | 2007-04-10 | Intel Corporation | Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low k dielectrics |
| US20050067378A1 (en) | 2003-09-30 | 2005-03-31 | Harry Fuerhaupter | Method for micro-roughening treatment of copper and mixed-metal circuitry |
| TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
-
2006
- 2006-03-24 US US11/387,934 patent/US7476620B2/en active Active
- 2006-03-24 DE DE602006013110T patent/DE602006013110D1/de active Active
- 2006-03-24 WO PCT/US2006/011113 patent/WO2006105020A1/en active Application Filing
- 2006-03-24 JP JP2008503282A patent/JP2008536302A/ja active Pending
- 2006-03-24 EP EP06748744A patent/EP1871855B1/en active Active
- 2006-03-24 CN CN200680017799.9A patent/CN101180379B/zh not_active Expired - Fee Related
- 2006-03-27 TW TW095110565A patent/TWI418618B/zh active
-
2009
- 2009-01-13 US US12/352,700 patent/US8114775B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI418618B (zh) | 2013-12-11 |
| US20090308836A1 (en) | 2009-12-17 |
| DE602006013110D1 (de) | 2010-05-06 |
| US7476620B2 (en) | 2009-01-13 |
| EP1871855A1 (en) | 2008-01-02 |
| CN101180379B (zh) | 2013-07-24 |
| EP1871855B1 (en) | 2010-03-24 |
| CN101180379A (zh) | 2008-05-14 |
| JP2008536302A (ja) | 2008-09-04 |
| WO2006105020A1 (en) | 2006-10-05 |
| US8114775B2 (en) | 2012-02-14 |
| US20060270235A1 (en) | 2006-11-30 |
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