TW200704799A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- TW200704799A TW200704799A TW095111746A TW95111746A TW200704799A TW 200704799 A TW200704799 A TW 200704799A TW 095111746 A TW095111746 A TW 095111746A TW 95111746 A TW95111746 A TW 95111746A TW 200704799 A TW200704799 A TW 200704799A
- Authority
- TW
- Taiwan
- Prior art keywords
- plane
- sputtering
- alloy
- ray diffraction
- intensity ratio
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005132224 | 2005-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200704799A true TW200704799A (en) | 2007-02-01 |
TWI326716B TWI326716B (zh) | 2010-07-01 |
Family
ID=37307755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095111746A TW200704799A (en) | 2005-04-28 | 2006-04-03 | Sputtering target |
Country Status (7)
Country | Link |
---|---|
US (1) | US8177947B2 (zh) |
EP (1) | EP1876258A4 (zh) |
JP (1) | JP5126742B2 (zh) |
KR (1) | KR100968395B1 (zh) |
CN (1) | CN101171362B (zh) |
TW (1) | TW200704799A (zh) |
WO (1) | WO2006117949A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8252126B2 (en) * | 2004-05-06 | 2012-08-28 | Global Advanced Metals, Usa, Inc. | Sputter targets and methods of forming same by rotary axial forging |
KR100994663B1 (ko) * | 2005-10-04 | 2010-11-16 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃 |
WO2008001547A1 (fr) * | 2006-06-29 | 2008-01-03 | Nippon Mining & Metals Co., Ltd. | élément de liaison pour cible de pulvérisation cathodique/plaque de support |
US10266924B2 (en) | 2009-05-22 | 2019-04-23 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
SG184778A1 (en) | 2009-08-11 | 2012-10-30 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
CN103052733B (zh) | 2010-08-09 | 2015-08-12 | 吉坤日矿日石金属株式会社 | 钽溅射靶 |
KR20170036120A (ko) | 2012-12-19 | 2017-03-31 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 및 그 제조 방법 |
US10407766B2 (en) | 2012-12-19 | 2019-09-10 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target and method for producing same |
CN104937133A (zh) | 2013-03-04 | 2015-09-23 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
SG11201600781YA (en) | 2013-10-01 | 2016-03-30 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
KR20170091738A (ko) | 2015-05-22 | 2017-08-09 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 및 그 제조 방법 |
WO2016190159A1 (ja) | 2015-05-22 | 2016-12-01 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
US9546837B1 (en) | 2015-10-09 | 2017-01-17 | Bh5773 Ltd | Advanced gun barrel |
WO2018179742A1 (ja) | 2017-03-30 | 2018-10-04 | Jx金属株式会社 | タンタルスパッタリングターゲット |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3825634C2 (de) * | 1988-07-28 | 1994-06-30 | Thyssen Stahl Ag | Verfahren zur Erzeugung von Warmbad oder Grobblechen |
US6197134B1 (en) * | 1997-01-08 | 2001-03-06 | Dowa Mining Co., Ltd. | Processes for producing fcc metals |
JPH1180942A (ja) | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Taスパッタターゲットとその製造方法及び組立体 |
US6323055B1 (en) * | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6193821B1 (en) * | 1998-08-19 | 2001-02-27 | Tosoh Smd, Inc. | Fine grain tantalum sputtering target and fabrication process |
US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
AU2001296213A1 (en) * | 2000-05-22 | 2001-12-24 | Cabot Corporation | High purity niobium and products containing the same, and methods of making the same |
JP3905301B2 (ja) * | 2000-10-31 | 2007-04-18 | 日鉱金属株式会社 | タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法 |
US6770154B2 (en) | 2001-09-18 | 2004-08-03 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
JP4883546B2 (ja) * | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
JP4263900B2 (ja) * | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Taスパッタリングターゲット及びその製造方法 |
KR100698745B1 (ko) * | 2003-04-01 | 2007-03-23 | 닛코킨조쿠 가부시키가이샤 | 탄탈륨 스퍼터링 타겟트 및 그 제조방법 |
CN1871372B (zh) * | 2003-11-06 | 2010-11-17 | 日矿金属株式会社 | 钽溅射靶 |
US8252126B2 (en) * | 2004-05-06 | 2012-08-28 | Global Advanced Metals, Usa, Inc. | Sputter targets and methods of forming same by rotary axial forging |
-
2006
- 2006-03-28 EP EP06730171A patent/EP1876258A4/en not_active Ceased
- 2006-03-28 WO PCT/JP2006/306223 patent/WO2006117949A1/ja active Application Filing
- 2006-03-28 US US11/912,450 patent/US8177947B2/en active Active
- 2006-03-28 JP JP2007514508A patent/JP5126742B2/ja active Active
- 2006-03-28 CN CN2006800147921A patent/CN101171362B/zh active Active
- 2006-03-28 KR KR1020077024857A patent/KR100968395B1/ko active IP Right Grant
- 2006-04-03 TW TW095111746A patent/TW200704799A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20090032392A1 (en) | 2009-02-05 |
EP1876258A4 (en) | 2008-08-13 |
US8177947B2 (en) | 2012-05-15 |
EP1876258A1 (en) | 2008-01-09 |
JP5126742B2 (ja) | 2013-01-23 |
KR20070121025A (ko) | 2007-12-26 |
JPWO2006117949A1 (ja) | 2008-12-18 |
CN101171362A (zh) | 2008-04-30 |
TWI326716B (zh) | 2010-07-01 |
CN101171362B (zh) | 2010-06-09 |
KR100968395B1 (ko) | 2010-07-07 |
WO2006117949A1 (ja) | 2006-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200704799A (en) | Sputtering target | |
TW200718796A (en) | Sputtering target | |
UA99445C2 (ru) | Способ получения порошка титана (варианты) и порошок титана, изготовленный данным способом | |
MY166492A (en) | Sputtering target for forming magnetic recording film and process for producing same | |
TW200503873A (en) | Diamond film-coated tool and method of manufacturing the same | |
SG166794A1 (en) | Layer arrangement for the formation of a coating on a surface of a substrate,coating method,and substrate with a layer arrangement | |
EA200701927A1 (ru) | Электролитические пластины из нержавеющей стали | |
TW200516132A (en) | Abrasive particles for chemical mechanical polishing | |
MY151333A (en) | Silver plating in electronics manufacture. | |
TW200603193A (en) | Coater with a large-area assembly of rotatable magnetrons | |
WO2008022061A3 (en) | Pvd targets and methods for their manufacture | |
MY149266A (en) | Galvannealed steel sheet and producing method therefor | |
TW200716767A (en) | Sputtering target for the formation of phase-change films and process for the production of the target | |
MY179634A (en) | Aluminum alloy substrate for magnetic disks, method for producing same, and magnetic disk using this aluminum alloy substrate for magnetic disks | |
GB0326904D0 (en) | Formation of self-assembled monolayers | |
WO2009031578A1 (ja) | 水素発生材料組成物、水素発生材料成形体及び水素の製造方法 | |
WO2010057652A8 (de) | Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung | |
TW200516162A (en) | Sputter target having modified surface texture | |
WO2007041469A3 (en) | A method for a metallic dry-filling process | |
EP2011903A3 (en) | Etching solution and method of its manufacturing as well as method of etching metal surfaces and microtextured implants made using such a method | |
ATE442465T1 (de) | Verfahren zur abscheidung von metallfreien kohlenstoffschichten | |
TW200604362A (en) | Backing plate for sputter targets | |
MY136877A (en) | Dietary supplementation with stoichiometrically specific potassium magnesium citrate | |
CN102808160A (zh) | 壳体及其制备方法 | |
CN103469168A (zh) | 一种制备润湿性可控的高光滑高硬TiN薄膜的方法 |