TW200703658A - Method of manufacturing polysilicon thin film transistor plate and liquid crystal display including polysilicon thin film transistor plate manufactured by the method - Google Patents
Method of manufacturing polysilicon thin film transistor plate and liquid crystal display including polysilicon thin film transistor plate manufactured by the methodInfo
- Publication number
- TW200703658A TW200703658A TW095108970A TW95108970A TW200703658A TW 200703658 A TW200703658 A TW 200703658A TW 095108970 A TW095108970 A TW 095108970A TW 95108970 A TW95108970 A TW 95108970A TW 200703658 A TW200703658 A TW 200703658A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film transistor
- polysilicon thin
- transistor plate
- liquid crystal
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 8
- 229920005591 polysilicon Polymers 0.000 title abstract 8
- 239000010409 thin film Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B17/00—Drilling rods or pipes; Flexible drill strings; Kellies; Drill collars; Sucker rods; Cables; Casings; Tubings
- E21B17/10—Wear protectors; Centralising devices, e.g. stabilisers
- E21B17/1035—Wear protectors; Centralising devices, e.g. stabilisers for plural rods, pipes or lines, e.g. for control lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02F—DREDGING; SOIL-SHIFTING
- E02F5/00—Dredgers or soil-shifting machines for special purposes
- E02F5/16—Machines for digging other holes in the soil
- E02F5/20—Machines for digging other holes in the soil for vertical holes
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B17/00—Drilling rods or pipes; Flexible drill strings; Kellies; Drill collars; Sucker rods; Cables; Casings; Tubings
- E21B17/10—Wear protectors; Centralising devices, e.g. stabilisers
- E21B17/1085—Wear protectors; Blast joints; Hard facing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
Landscapes
- Engineering & Computer Science (AREA)
- Mining & Mineral Resources (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Mechanical Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Thin Film Transistor (AREA)
- Civil Engineering (AREA)
- Liquid Crystal (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050022276A KR20060100602A (ko) | 2005-03-17 | 2005-03-17 | 폴리실리콘 박막 트랜지스터의 제조 방법 및 그에 의해제조된 폴리실리콘 박막 트랜지스터를 포함하는 액정 표시장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200703658A true TW200703658A (en) | 2007-01-16 |
Family
ID=37010903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095108970A TW200703658A (en) | 2005-03-17 | 2006-03-16 | Method of manufacturing polysilicon thin film transistor plate and liquid crystal display including polysilicon thin film transistor plate manufactured by the method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20060211181A1 (zh) |
| JP (1) | JP2006261681A (zh) |
| KR (1) | KR20060100602A (zh) |
| TW (1) | TW200703658A (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2701182A3 (en) | 2010-12-10 | 2014-06-04 | Teijin Limited | Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device |
| CN102800574A (zh) * | 2011-05-26 | 2012-11-28 | 中国科学院微电子研究所 | 多晶硅栅极的制造方法 |
| US20150053263A1 (en) | 2012-03-30 | 2015-02-26 | Teijin Limited | Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer |
| KR102313563B1 (ko) * | 2014-12-22 | 2021-10-18 | 주식회사 케이씨텍 | 다양한 웨이퍼 연마 공정을 처리할 수 있는 웨이퍼 처리 시스템 |
| KR102333209B1 (ko) | 2015-04-28 | 2021-12-01 | 삼성디스플레이 주식회사 | 기판 연마 장치 |
| KR102509260B1 (ko) * | 2015-11-20 | 2023-03-14 | 삼성디스플레이 주식회사 | 실리콘 연마 슬러리, 다결정 실리콘의 연마방법 및 박막 트랜지스터 기판의 제조방법 |
| KR102647695B1 (ko) | 2016-08-12 | 2024-03-14 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 및 그 제조 방법 |
| KR102559647B1 (ko) | 2016-08-12 | 2023-07-25 | 삼성디스플레이 주식회사 | 기판 연마 시스템 및 기판 연마 방법 |
| KR102322767B1 (ko) | 2017-03-10 | 2021-11-08 | 삼성디스플레이 주식회사 | 기판과 스테이지 간의 분리 기구가 개선된 기판 처리 장치 및 그것을 이용한 기판 처리 방법 |
| KR102420327B1 (ko) | 2017-06-13 | 2022-07-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 구비한 표시 장치 및 이의 제조 방법 |
| KR102426624B1 (ko) | 2017-11-23 | 2022-07-28 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| JP7106209B2 (ja) * | 2018-04-05 | 2022-07-26 | 株式会社ディスコ | ＳｉＣ基板の研磨方法 |
| KR20210116775A (ko) | 2020-03-13 | 2021-09-28 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10200120A (ja) * | 1997-01-10 | 1998-07-31 | Sharp Corp | 半導体装置の製造方法 |
| JP2000040828A (ja) * | 1998-07-24 | 2000-02-08 | Toshiba Corp | 薄膜トランジスタの製造方法 |
| JP2000218512A (ja) * | 1999-01-28 | 2000-08-08 | Osaka Diamond Ind Co Ltd | Ｃｍｐ用パッドコンディショナーおよびその製造方法 |
| JP2000246650A (ja) * | 1999-02-25 | 2000-09-12 | Mitsubishi Materials Corp | 耐食性砥石 |
| US6431959B1 (en) * | 1999-12-20 | 2002-08-13 | Lam Research Corporation | System and method of defect optimization for chemical mechanical planarization of polysilicon |
| JP2001345293A (ja) * | 2000-05-31 | 2001-12-14 | Ebara Corp | 化学機械研磨方法及び化学機械研磨装置 |
| JP2002151410A (ja) * | 2000-08-22 | 2002-05-24 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
| US6686978B2 (en) * | 2001-02-28 | 2004-02-03 | Sharp Laboratories Of America, Inc. | Method of forming an LCD with predominantly <100> polycrystalline silicon regions |
| JP2003109918A (ja) * | 2001-09-28 | 2003-04-11 | Internatl Business Mach Corp <Ibm> | 化学機械研磨（ｃｍｐ）を用いてボンディングのためにウェハを平滑化する装置およびその方法 |
| KR100753568B1 (ko) * | 2003-06-30 | 2007-08-30 | 엘지.필립스 엘시디 주식회사 | 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법 |
| US7189649B2 (en) * | 2004-08-20 | 2007-03-13 | United Microelectronics Corp. | Method of forming a material film |
-
2005
- 2005-03-17 KR KR1020050022276A patent/KR20060100602A/ko not_active Application Discontinuation
-
2006
- 2006-03-16 TW TW095108970A patent/TW200703658A/zh unknown
- 2006-03-17 JP JP2006075342A patent/JP2006261681A/ja active Pending
- 2006-03-17 US US11/378,861 patent/US20060211181A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060100602A (ko) | 2006-09-21 |
| US20060211181A1 (en) | 2006-09-21 |
| JP2006261681A (ja) | 2006-09-28 |
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