TW200703499A - Semiconductor device fabrication method - Google Patents

Semiconductor device fabrication method

Info

Publication number
TW200703499A
TW200703499A TW095111987A TW95111987A TW200703499A TW 200703499 A TW200703499 A TW 200703499A TW 095111987 A TW095111987 A TW 095111987A TW 95111987 A TW95111987 A TW 95111987A TW 200703499 A TW200703499 A TW 200703499A
Authority
TW
Taiwan
Prior art keywords
processing chamber
semiconductor device
metal film
fabrication method
device fabrication
Prior art date
Application number
TW095111987A
Other languages
English (en)
Other versions
TWI299189B (en
Inventor
Takanobu Nishida
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200703499A publication Critical patent/TW200703499A/zh
Application granted granted Critical
Publication of TWI299189B publication Critical patent/TWI299189B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW095111987A 2005-04-28 2006-04-04 Semiconductor device fabrication method TWI299189B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005132622A JP2006310634A (ja) 2005-04-28 2005-04-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200703499A true TW200703499A (en) 2007-01-16
TWI299189B TWI299189B (en) 2008-07-21

Family

ID=37235017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111987A TWI299189B (en) 2005-04-28 2006-04-04 Semiconductor device fabrication method

Country Status (4)

Country Link
US (1) US20060246731A1 (zh)
JP (1) JP2006310634A (zh)
KR (1) KR100769876B1 (zh)
TW (1) TWI299189B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100924611B1 (ko) 2007-05-11 2009-11-02 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성방법
US7638441B2 (en) * 2007-09-11 2009-12-29 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
US7632549B2 (en) * 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
US20100104770A1 (en) * 2008-10-27 2010-04-29 Asm Japan K.K. Two-step formation of hydrocarbon-based polymer film
US9296947B2 (en) * 2011-03-29 2016-03-29 Zeon Corporation Plasma etching gas and plasma etching method
JP5886544B2 (ja) * 2011-06-14 2016-03-16 ローム株式会社 半導体装置およびその製造方法
JP2015046459A (ja) * 2013-08-28 2015-03-12 ソニー株式会社 エッチング方法、電子デバイスの製造方法および偏光板の製造方法
KR20150092581A (ko) * 2014-02-05 2015-08-13 삼성전자주식회사 배선 구조물 및 그 형성 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6009830A (en) * 1997-11-21 2000-01-04 Applied Materials Inc. Independent gas feeds in a plasma reactor
JPH11293481A (ja) 1998-04-14 1999-10-26 Toshiba Corp 薄膜処理方法及びその装置
US6010966A (en) * 1998-08-07 2000-01-04 Applied Materials, Inc. Hydrocarbon gases for anisotropic etching of metal-containing layers
JP2000208488A (ja) * 1999-01-12 2000-07-28 Kawasaki Steel Corp エッチング方法
JP2001044173A (ja) 1999-07-26 2001-02-16 Kobe Steel Ltd エッチング方法
KR100727834B1 (ko) * 2000-09-07 2007-06-14 다이킨 고교 가부시키가이샤 드라이 에칭 가스 및 드라이 에칭 방법
JP2002093778A (ja) 2000-09-11 2002-03-29 Toshiba Corp 有機膜のエッチング方法およびこれを用いた半導体装置の製造方法
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US7147900B2 (en) * 2003-08-14 2006-12-12 Asm Japan K.K. Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation

Also Published As

Publication number Publication date
JP2006310634A (ja) 2006-11-09
KR100769876B1 (ko) 2007-10-24
KR20060113409A (ko) 2006-11-02
TWI299189B (en) 2008-07-21
US20060246731A1 (en) 2006-11-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees