TW200703447A - Nonvolatile storage element and fabrication method thereof - Google Patents

Nonvolatile storage element and fabrication method thereof

Info

Publication number
TW200703447A
TW200703447A TW095118161A TW95118161A TW200703447A TW 200703447 A TW200703447 A TW 200703447A TW 095118161 A TW095118161 A TW 095118161A TW 95118161 A TW95118161 A TW 95118161A TW 200703447 A TW200703447 A TW 200703447A
Authority
TW
Taiwan
Prior art keywords
storage element
nonvolatile storage
variable resistor
fabrication method
fabrication
Prior art date
Application number
TW095118161A
Other languages
English (en)
Inventor
Hidechika Kawazoe
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200703447A publication Critical patent/TW200703447A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095118161A 2005-06-10 2006-05-22 Nonvolatile storage element and fabrication method thereof TW200703447A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005170691A JP2006344876A (ja) 2005-06-10 2005-06-10 不揮発性記憶素子とその製造方法

Publications (1)

Publication Number Publication Date
TW200703447A true TW200703447A (en) 2007-01-16

Family

ID=37498252

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118161A TW200703447A (en) 2005-06-10 2006-05-22 Nonvolatile storage element and fabrication method thereof

Country Status (3)

Country Link
JP (1) JP2006344876A (zh)
TW (1) TW200703447A (zh)
WO (1) WO2006132045A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4648940B2 (ja) * 2007-03-20 2011-03-09 シャープ株式会社 可変抵抗素子の製造方法
KR101418434B1 (ko) 2008-03-13 2014-08-14 삼성전자주식회사 비휘발성 메모리 장치, 이의 제조 방법, 및 이를 포함하는프로세싱 시스템
JP4460646B2 (ja) * 2008-06-03 2010-05-12 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、および不揮発性半導体装置
WO2012098879A1 (ja) 2011-01-20 2012-07-26 パナソニック株式会社 抵抗変化素子およびその製造方法
CN103066207A (zh) * 2012-12-26 2013-04-24 北京大学 阻变存储器及其制备方法
CN110752291B (zh) * 2019-09-18 2023-04-18 杭州未名信科科技有限公司 一种侧壁电极阻变存储结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02186684A (ja) * 1989-01-12 1990-07-20 Seiko Epson Corp 固体記憶膜の形成法
AU2003264480A1 (en) * 2002-09-19 2004-04-08 Sharp Kabushiki Kaisha Variable resistance functional body and its manufacturing method
CN100365815C (zh) * 2003-05-09 2008-01-30 松下电器产业株式会社 非易失性存储器及其制造方法
US6927074B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Asymmetric memory cell
KR100504700B1 (ko) * 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램

Also Published As

Publication number Publication date
WO2006132045A1 (ja) 2006-12-14
JP2006344876A (ja) 2006-12-21

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