TW200701356A - Composition for removing conductive materials and manufacturing method of array substrate using the same - Google Patents

Composition for removing conductive materials and manufacturing method of array substrate using the same

Info

Publication number
TW200701356A
TW200701356A TW095121286A TW95121286A TW200701356A TW 200701356 A TW200701356 A TW 200701356A TW 095121286 A TW095121286 A TW 095121286A TW 95121286 A TW95121286 A TW 95121286A TW 200701356 A TW200701356 A TW 200701356A
Authority
TW
Taiwan
Prior art keywords
composition
manufacturing
array substrate
same
conductive materials
Prior art date
Application number
TW095121286A
Other languages
English (en)
Other versions
TWI308368B (en
Inventor
Kye-Chan Song
Jong-Il Kim
Kyoung-Mook Lee
Sam-Young Cho
Hyun-Cheol Shin
Nam Seo Kim
Original Assignee
Lg Philips Lcd Co Ltd
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Philips Lcd Co Ltd, Dongjin Semichem Co Ltd filed Critical Lg Philips Lcd Co Ltd
Publication of TW200701356A publication Critical patent/TW200701356A/zh
Application granted granted Critical
Publication of TWI308368B publication Critical patent/TWI308368B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
TW095121286A 2005-06-28 2006-06-14 Composition for removing conductive materials and anufacturing method of array substrate using the same TWI308368B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050056493A KR101154244B1 (ko) 2005-06-28 2005-06-28 알루미늄, 몰리브덴, 인듐-틴-옥사이드를 식각하기 위한 식각액

Publications (2)

Publication Number Publication Date
TW200701356A true TW200701356A (en) 2007-01-01
TWI308368B TWI308368B (en) 2009-04-01

Family

ID=37566035

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095121286A TWI308368B (en) 2005-06-28 2006-06-14 Composition for removing conductive materials and anufacturing method of array substrate using the same

Country Status (5)

Country Link
US (1) US7686968B2 (zh)
JP (1) JP4289682B2 (zh)
KR (1) KR101154244B1 (zh)
CN (2) CN102605373B (zh)
TW (1) TWI308368B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI500819B (zh) * 2012-07-24 2015-09-21 Plansee Se 蝕刻劑組合物以及用於蝕刻多層金屬膜的方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100818885B1 (ko) * 2004-04-06 2008-04-01 차운철 축이 없는 프로펠러 장치
KR20070017762A (ko) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법
KR101299131B1 (ko) * 2006-05-10 2013-08-22 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각 조성물
WO2008129891A1 (ja) * 2007-04-13 2008-10-30 Tosoh Corporation エッチング用組成物及びエッチング方法
KR101371606B1 (ko) * 2007-04-27 2014-03-07 주식회사 동진쎄미켐 박막 트랜지스터 액정 표시 장치용 식각 조성물
KR101393599B1 (ko) * 2007-09-18 2014-05-12 주식회사 동진쎄미켐 Ｔｆｔ-ｌｃｄ용 금속 배선 형성을 위한 식각액 조성물
US20090120901A1 (en) * 2007-11-09 2009-05-14 Pixeloptics Inc. Patterned electrodes with reduced residue
SG187274A1 (en) * 2011-07-14 2013-02-28 3M Innovative Properties Co Etching method and devices produced using the etching method
CN106415382A (zh) 2014-01-23 2017-02-15 3M创新有限公司 用于对微观结构进行图案化的方法
KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
CN104060267A (zh) * 2014-07-17 2014-09-24 深圳市卓力达电子有限公司 一种用于金属钼片的化学蚀刻方法
CN109706455B (zh) * 2019-02-18 2022-03-18 湖北兴福电子材料有限公司 一种高蚀刻速率与选择比的铝蚀刻液及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL194998A1 (pl) * 1976-12-31 1978-07-03 Politechnika Slaska Im Wincent Sposob przygotowania powierzchni wyrobow ze stopow zelaza,stopow niklu i stopow chromu przed procesem aluminiowania zanurzeniowego
JP2814155B2 (ja) * 1990-08-13 1998-10-22 キヤノン株式会社 Ｉｔｏ膜パターンの形成方法および液晶表示素子用基板の製造方法
JP2781954B2 (ja) * 1994-03-04 1998-07-30 メック株式会社 銅および銅合金の表面処理剤
JPH09185074A (ja) * 1995-12-28 1997-07-15 Canon Inc 液晶素子及びその製造方法
JPH09316650A (ja) * 1996-05-23 1997-12-09 Fujitsu Ltd 無電解ニッケルめっき用活性化処理液及びエッチング液並びに半導体装置の製造方法
TW385375B (en) * 1996-07-26 2000-03-21 Asahi Glass Co Ltd Transparent conductive film and forming method for transparent electrode
JP3124512B2 (ja) 1997-06-02 2001-01-15 株式会社ヤマトヤ商会 エッチングレジスト用エッチング液
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
KR100321227B1 (ko) 2000-03-18 2004-09-07 테크노세미켐 주식회사 액정표시장치의전극용식각액
KR100765140B1 (ko) 2001-05-30 2007-10-15 삼성전자주식회사 알루미늄과 아이티오를 동시에 식각하기 위한 식각액 조성물
JP2003156764A (ja) * 2001-11-20 2003-05-30 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ基板の製造方法およびそれを備える液晶表示装置
KR100945583B1 (ko) 2002-08-07 2010-03-08 삼성전자주식회사 배선용 식각액 및 이를 이용한 박막 트랜지스터 표시판의제조 방법
KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
JP2004335391A (ja) * 2003-05-12 2004-11-25 Asahi Glass Co Ltd 配線付き基体形成用積層体、配線付き基体およびその形成方法
JP2004356616A (ja) * 2003-05-28 2004-12-16 Samsung Electronics Co Ltd 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法
KR100960687B1 (ko) * 2003-06-24 2010-06-01 엘지디스플레이 주식회사 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액
KR100575233B1 (ko) * 2003-11-04 2006-05-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조 방법
KR20040029289A (ko) * 2003-11-14 2004-04-06 동우 화인켐 주식회사 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및단일막 식각액 조성물
JP2005163070A (ja) 2003-11-28 2005-06-23 Sharp Corp エッチング液およびエッチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI500819B (zh) * 2012-07-24 2015-09-21 Plansee Se 蝕刻劑組合物以及用於蝕刻多層金屬膜的方法

Also Published As

Publication number Publication date
US7686968B2 (en) 2010-03-30
TWI308368B (en) 2009-04-01
CN102605373A (zh) 2012-07-25
KR101154244B1 (ko) 2012-06-18
KR20070000850A (ko) 2007-01-03
US20060289383A1 (en) 2006-12-28
JP2007009331A (ja) 2007-01-18
CN1891862A (zh) 2007-01-10
JP4289682B2 (ja) 2009-07-01
CN102605373B (zh) 2014-07-02

Similar Documents

Publication Publication Date Title
TW200701356A (en) Composition for removing conductive materials and manufacturing method of array substrate using the same
WO2011017342A3 (en) Mesoionic pesticides
WO2011087702A3 (en) Aqueous antiperspirant/deodorant composition
PH12014500760A1 (en) Mesoionic pesticides
WO2008090554A3 (en) Modified conductive surfaces prepared by electrografting of diazonium salts
TWI367880B (en) Carbazole compounds
WO2009123762A3 (en) Method of screening single cells for the production of biologically active agents
WO2011073444A3 (en) Azoline compounds for combating invertebrate pests
UA91910C2 (ru) Композиция для борьбы с заболеваниями, вызванными фитопатогенными микроорганизмами, и способ борьбы с заболеваниями, вызванными фитопатогенными микроорганизмами, на полезных растениях или на материале для их размножения
WO2011017334A3 (en) Mesoionic pesticides
WO2010072781A3 (en) Imine compounds for combating invertebrate pests
DK1789527T3 (da) Rensningssammensætninger til mikroelektroniksubstrater
SG170729A1 (en) Processes and intermediates for preparing steric compounds
MX2009006035A (es) Composiciones surfactantes concentradas.
WO2007110719A3 (en) Improved alkaline solutions for post cmp cleaning processes
MY141193A (en) Cleaning compound and method and system for using the cleaning compound
TW200705128A (en) Remover compositions
AP2006003533A0 (en) Method of plant growth promotion using amide compounds.
WO2006058278A3 (en) Methods for improving liver clearance of xenobiotic substances in an animal
ZA200804171B (en) Chemical process for the preparation of an amidophenoxybenzoic acid compound
WO2007023342A3 (en) Process of making geminal bisphosphonic acids and pharmaceutically acceptable salts and/or hydrates thereof
AU2003270610A1 (en) Method and composition for attracting arthropods by volatilizing an acid
TW200728452A (en) Detergent for hard surface cleaning
SI1831239T1 (sl) Postopek za pripravo gamma laktona hidroksi beta beta beta beta bismetilen alfa pregn en on karboksilne kisline in ključniintermediati za ta postopek
WO2008122396A3 (en) Method of improving the growth of a plant

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees