TW200643157A - Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method - Google Patents

Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method

Info

Publication number
TW200643157A
TW200643157A TW095108282A TW95108282A TW200643157A TW 200643157 A TW200643157 A TW 200643157A TW 095108282 A TW095108282 A TW 095108282A TW 95108282 A TW95108282 A TW 95108282A TW 200643157 A TW200643157 A TW 200643157A
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
polishing
abrasive
Prior art date
Application number
TW095108282A
Other languages
English (en)
Inventor
Iori Yoshida
Yoshinori Kon
Original Assignee
Asahi Glass Co Ltd
Seimi Chem Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Seimi Chem Kk filed Critical Asahi Glass Co Ltd
Publication of TW200643157A publication Critical patent/TW200643157A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW095108282A 2005-03-16 2006-03-10 Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method TW200643157A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005074373 2005-03-16

Publications (1)

Publication Number Publication Date
TW200643157A true TW200643157A (en) 2006-12-16

Family

ID=36991494

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108282A TW200643157A (en) 2005-03-16 2006-03-10 Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method

Country Status (7)

Country Link
US (1) US8030213B2 (zh)
EP (1) EP1860688A4 (zh)
JP (1) JPWO2006098141A1 (zh)
KR (1) KR20070112453A (zh)
CN (1) CN100578740C (zh)
TW (1) TW200643157A (zh)
WO (1) WO2006098141A1 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4554363B2 (ja) * 2002-07-22 2010-09-29 Ａｇｃセイミケミカル株式会社 半導体用研磨剤、その製造方法及び研磨方法
JP2006278522A (ja) * 2005-03-28 2006-10-12 Seimi Chem Co Ltd 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
US7585340B2 (en) 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
JP4957284B2 (ja) * 2006-04-28 2012-06-20 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法および磁気ディスク
CN101512733A (zh) * 2006-09-11 2009-08-19 旭硝子株式会社 用于半导体集成电路装置的抛光剂、抛光方法以及半导体集成电路装置的制造方法
KR101349983B1 (ko) * 2006-09-13 2014-01-13 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
CN101656209B (zh) * 2008-08-18 2012-03-07 中芯国际集成电路制造(上海)有限公司 化学机械研磨的方法
KR20110090918A (ko) * 2008-11-07 2011-08-10 아사히 가라스 가부시키가이샤 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
WO2012098933A1 (ja) * 2011-01-20 2012-07-26 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
US20140054266A1 (en) * 2012-08-24 2014-02-27 Wiechang Jin Compositions and methods for selective polishing of platinum and ruthenium materials
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6423279B2 (ja) * 2015-02-10 2018-11-14 株式会社フジミインコーポレーテッド 研磨用組成物
US9803107B2 (en) * 2015-02-12 2017-10-31 Asahi Glass Company, Limited Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
CN113004799A (zh) * 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112561A (ja) 1997-04-28 1999-01-19 Seimi Chem Co Ltd 半導体用研磨剤および半導体用研磨剤の製造方法
US6099604A (en) * 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
KR100851451B1 (ko) * 1998-12-25 2008-08-08 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
JP2001035818A (ja) 1999-07-16 2001-02-09 Seimi Chem Co Ltd 半導体用研磨剤
JP2001185514A (ja) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4195212B2 (ja) * 2000-10-23 2008-12-10 花王株式会社 研磨液組成物
KR100416587B1 (ko) * 2000-12-22 2004-02-05 삼성전자주식회사 씨엠피 연마액
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
JP2004022804A (ja) * 2002-06-17 2004-01-22 Disco Abrasive Syst Ltd 研磨装置
TWI256971B (en) * 2002-08-09 2006-06-21 Hitachi Chemical Co Ltd CMP abrasive and method for polishing substrate
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
JP4267348B2 (ja) * 2003-03-05 2009-05-27 花王株式会社 研磨基板の製造方法
JP2007535118A (ja) * 2003-07-09 2007-11-29 ダイネア ケミカルズ オイ 化学的機械的な平坦化に用いるための非高分子有機粒子
JP2005038924A (ja) * 2003-07-16 2005-02-10 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨液
JP2005048125A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
US20050159085A1 (en) * 2003-10-30 2005-07-21 Scott Brandon S. Method of chemically mechanically polishing substrates
JP2006278522A (ja) * 2005-03-28 2006-10-12 Seimi Chem Co Ltd 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
KR20070112453A (ko) 2007-11-26
CN100578740C (zh) 2010-01-06
EP1860688A4 (en) 2010-08-18
US8030213B2 (en) 2011-10-04
WO2006098141A1 (ja) 2006-09-21
JPWO2006098141A1 (ja) 2008-08-21
EP1860688A1 (en) 2007-11-28
CN101142659A (zh) 2008-03-12
US20080070412A1 (en) 2008-03-20

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