TW200637928A - Barrier film for flexible copper substrate and sputtering target for barrier film formation - Google Patents

Barrier film for flexible copper substrate and sputtering target for barrier film formation

Info

Publication number
TW200637928A
TW200637928A TW095100030A TW95100030A TW200637928A TW 200637928 A TW200637928 A TW 200637928A TW 095100030 A TW095100030 A TW 095100030A TW 95100030 A TW95100030 A TW 95100030A TW 200637928 A TW200637928 A TW 200637928A
Authority
TW
Taiwan
Prior art keywords
barrier film
film
barrier
sputtering target
copper substrate
Prior art date
Application number
TW095100030A
Other languages
English (en)
Chinese (zh)
Other versions
TWI296657B (enExample
Inventor
Shuichi Irumata
Yasuhiro Yamakoshi
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of TW200637928A publication Critical patent/TW200637928A/zh
Application granted granted Critical
Publication of TWI296657B publication Critical patent/TWI296657B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Laminated Bodies (AREA)
TW095100030A 2005-02-17 2006-01-02 Barrier film for flexible copper substrate and sputtering target for barrier film formation TW200637928A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005039979 2005-02-17

Publications (2)

Publication Number Publication Date
TW200637928A true TW200637928A (en) 2006-11-01
TWI296657B TWI296657B (enExample) 2008-05-11

Family

ID=36916284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100030A TW200637928A (en) 2005-02-17 2006-01-02 Barrier film for flexible copper substrate and sputtering target for barrier film formation

Country Status (3)

Country Link
JP (1) JP4485570B2 (enExample)
TW (1) TW200637928A (enExample)
WO (1) WO2006087873A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106536783A (zh) * 2014-08-07 2017-03-22 3M创新有限公司 反射片及其制造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101203439B1 (ko) 2007-12-21 2012-11-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 프린트 배선판용 동박
JP2010133001A (ja) * 2008-12-08 2010-06-17 Hitachi Metals Ltd Ｎｉ合金ターゲット材の製造方法
JP5373453B2 (ja) * 2009-03-31 2013-12-18 Ｊｘ日鉱日石金属株式会社 プリント配線板用銅箔
WO2011001551A1 (ja) * 2009-06-30 2011-01-06 Jx日鉱日石金属株式会社 プリント配線板用銅箔
JP2013219150A (ja) * 2012-04-06 2013-10-24 National Institute Of Advanced Industrial & Technology 炭化珪素半導体装置のオーミック電極の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299820A (ja) * 1992-04-22 1993-11-12 Toyo Metaraijingu Kk フレキシブルプリント配線板
JPH09260812A (ja) * 1996-03-18 1997-10-03 Toyo Metallizing Co Ltd 無線型ｉｃカード用プリント回路基板
US6171714B1 (en) * 1996-04-18 2001-01-09 Gould Electronics Inc. Adhesiveless flexible laminate and process for making adhesiveless flexible laminate
JP3731841B2 (ja) * 1997-06-17 2006-01-05 東レエンジニアリング株式会社 二層フレキシブル回路基材の製造方法
JP4593808B2 (ja) * 2001-02-22 2010-12-08 京セラ株式会社 多層配線基板
JP4385298B2 (ja) * 2004-09-01 2009-12-16 住友金属鉱山株式会社 ２層フレキシブル基板及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106536783A (zh) * 2014-08-07 2017-03-22 3M创新有限公司 反射片及其制造方法

Also Published As

Publication number Publication date
JP4485570B2 (ja) 2010-06-23
TWI296657B (enExample) 2008-05-11
WO2006087873A1 (ja) 2006-08-24
JPWO2006087873A1 (ja) 2008-07-03

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