TW200633198A - Solid-state image sensing device - Google Patents

Solid-state image sensing device

Info

Publication number
TW200633198A
TW200633198A TW095107023A TW95107023A TW200633198A TW 200633198 A TW200633198 A TW 200633198A TW 095107023 A TW095107023 A TW 095107023A TW 95107023 A TW95107023 A TW 95107023A TW 200633198 A TW200633198 A TW 200633198A
Authority
TW
Taiwan
Prior art keywords
image sensing
solid
state image
printed board
sensing device
Prior art date
Application number
TW095107023A
Other languages
English (en)
Other versions
TWI302742B (en
Inventor
Hiroaki Tsukamoto
Nobuhito Hirosumi
Takashi Yasudome
Kazuo Kinoshita
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200633198A publication Critical patent/TW200633198A/zh
Application granted granted Critical
Publication of TWI302742B publication Critical patent/TWI302742B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/0557Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05571Disposition the external layer being disposed in a recess of the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
TW095107023A 2005-03-02 2006-03-02 Solid-state image sensing device TWI302742B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005058128A JP2006245246A (ja) 2005-03-02 2005-03-02 固体撮像装置

Publications (2)

Publication Number Publication Date
TW200633198A true TW200633198A (en) 2006-09-16
TWI302742B TWI302742B (en) 2008-11-01

Family

ID=36607464

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107023A TWI302742B (en) 2005-03-02 2006-03-02 Solid-state image sensing device

Country Status (6)

Country Link
US (1) US20060208182A1 (zh)
EP (1) EP1699082A1 (zh)
JP (1) JP2006245246A (zh)
KR (1) KR100808962B1 (zh)
CN (1) CN1828920A (zh)
TW (1) TWI302742B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100824997B1 (ko) 2006-11-24 2008-04-24 테라셈 주식회사 이미지 센서용 반도체칩 패키지 제조방법
DE102007007503A1 (de) * 2007-02-15 2008-08-21 Robert Bosch Gmbh Bauelementanordnung
US7663095B2 (en) * 2007-09-20 2010-02-16 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Photodetector with embedded infrared filter
JP4443600B2 (ja) 2007-12-03 2010-03-31 シャープ株式会社 固体撮像装置の製造方法
JP2009239898A (ja) * 2008-03-06 2009-10-15 Nec Electronics Corp 固体撮像装置および固体撮像装置用パッケージ
JP2010232555A (ja) 2009-03-27 2010-10-14 Oki Semiconductor Co Ltd 半導体装置の製造方法
KR101026829B1 (ko) 2009-07-09 2011-04-06 엘지이노텍 주식회사 카메라 모듈 및 그 제조 방법
EP2506302B1 (en) * 2009-11-26 2021-08-11 Kyocera Corporation Wiring substrate, imaging device and imaging device module
JP2011210808A (ja) * 2010-03-29 2011-10-20 Casio Computer Co Ltd 半導体構成体及び半導体装置
JP5601081B2 (ja) * 2010-08-11 2014-10-08 株式会社ニコン 撮像素子ユニットおよび撮像装置
KR101779498B1 (ko) 2010-11-16 2017-09-18 엘지이노텍 주식회사 카메라 모듈
US9392147B2 (en) 2010-11-18 2016-07-12 Lg Innotek Co., Ltd. Camera module having elastic stiffening material for efficient shock absorbing property and method for manufacturing the same
WO2012124183A1 (ja) * 2011-03-11 2012-09-20 富士フイルム株式会社 撮像装置およびその動作制御方法
CN105611135B (zh) * 2015-11-13 2019-03-19 宁波舜宇光电信息有限公司 系统级摄像模组及其电气支架和制造方法
EP3376751B1 (en) * 2015-11-13 2021-04-21 Ningbo Sunny Opotech Co., Ltd. Camera module, electrical support thereof, and assembling method therefor
WO2017140092A1 (zh) 2016-02-18 2017-08-24 宁波舜宇光电信息有限公司 基于一体封装工艺的摄像模组及其一体基座组件和制造方法
CN107644883B (zh) * 2016-07-21 2019-12-31 许志行 可携式电子装置及其影像获取模块

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990036077A (ko) * 1995-08-02 1999-05-25 모리 가즈히로 고체 촬상 장치 및 그 제조 방법
US6566745B1 (en) * 1999-03-29 2003-05-20 Imec Vzw Image sensor ball grid array package and the fabrication thereof
JP4004705B2 (ja) * 2000-02-29 2007-11-07 松下電器産業株式会社 撮像装置と撮像装置組立方法
JP2001358997A (ja) * 2000-06-12 2001-12-26 Mitsubishi Electric Corp 半導体装置
JP2002043451A (ja) * 2000-07-24 2002-02-08 Kyocera Corp 半導体装置
JP3738824B2 (ja) * 2000-12-26 2006-01-25 セイコーエプソン株式会社 光学装置及びその製造方法並びに電子機器
JP3646933B2 (ja) * 2001-11-22 2005-05-11 松下電器産業株式会社 固体撮像装置およびその製造方法
US6784534B1 (en) * 2002-02-06 2004-08-31 Amkor Technology, Inc. Thin integrated circuit package having an optically transparent window
JP4184125B2 (ja) * 2002-04-26 2008-11-19 富士フイルム株式会社 撮像素子チップモジュール
US7274094B2 (en) * 2002-08-28 2007-09-25 Micron Technology, Inc. Leadless packaging for image sensor devices
US6696738B1 (en) * 2002-11-12 2004-02-24 Kingpak Technology Inc. Miniaturized image sensor
KR100502212B1 (ko) * 2003-01-04 2005-07-19 김영호 이미지 센서 및 그 제조방법
JP2004296453A (ja) 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
JP4303610B2 (ja) * 2003-05-19 2009-07-29 富士フイルム株式会社 多層配線基板、部品実装方法、及び、撮像装置
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages

Also Published As

Publication number Publication date
EP1699082A1 (en) 2006-09-06
TWI302742B (en) 2008-11-01
KR100808962B1 (ko) 2008-03-04
US20060208182A1 (en) 2006-09-21
JP2006245246A (ja) 2006-09-14
CN1828920A (zh) 2006-09-06
KR20060096339A (ko) 2006-09-11

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees