TW200627071A - Resist composition for immersion exposure and method for forming resist pattern - Google Patents

Resist composition for immersion exposure and method for forming resist pattern

Info

Publication number
TW200627071A
TW200627071A TW094143033A TW94143033A TW200627071A TW 200627071 A TW200627071 A TW 200627071A TW 094143033 A TW094143033 A TW 094143033A TW 94143033 A TW94143033 A TW 94143033A TW 200627071 A TW200627071 A TW 200627071A
Authority
TW
Taiwan
Prior art keywords
immersion exposure
resist composition
forming
resist pattern
acid
Prior art date
Application number
TW094143033A
Other languages
English (en)
Other versions
TWI283337B (en
Inventor
Hiromitsu Tsuji
Shogo Matsumaru
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200627071A publication Critical patent/TW200627071A/zh
Application granted granted Critical
Publication of TWI283337B publication Critical patent/TWI283337B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
TW094143033A 2004-12-20 2005-12-06 Resist composition for immersion exposure and method for forming resist pattern TWI283337B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004367971A JP4597655B2 (ja) 2004-12-20 2004-12-20 レジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200627071A true TW200627071A (en) 2006-08-01
TWI283337B TWI283337B (en) 2007-07-01

Family

ID=36601549

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094143033A TWI283337B (en) 2004-12-20 2005-12-06 Resist composition for immersion exposure and method for forming resist pattern

Country Status (7)

Country Link
US (1) US20100028799A1 (zh)
EP (1) EP1830227A4 (zh)
JP (1) JP4597655B2 (zh)
KR (1) KR100875871B1 (zh)
CN (1) CN101080673B (zh)
TW (1) TWI283337B (zh)
WO (1) WO2006067944A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4579811B2 (ja) * 2005-01-06 2010-11-10 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP4580793B2 (ja) * 2005-03-18 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7754414B2 (en) 2006-07-12 2010-07-13 Az Electronic Materials Usa Corp. Antireflective coating compositions
JP5068526B2 (ja) * 2006-12-28 2012-11-07 東京応化工業株式会社 高分子化合物、レジスト組成物およびレジストパターン形成方法
US7838199B2 (en) * 2007-02-28 2010-11-23 Rohm And Haas Electronic Materials Llc Polymers and photoresist compositions
US8088550B2 (en) * 2007-07-30 2012-01-03 Fujifilm Corporation Positive resist composition and pattern forming method
JP5303142B2 (ja) 2007-11-30 2013-10-02 東京応化工業株式会社 含フッ素化合物、含フッ素高分子化合物、液浸露光用レジスト組成物およびレジストパターン形成方法
JP4966886B2 (ja) * 2008-02-12 2012-07-04 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
KR101761434B1 (ko) * 2009-12-08 2017-07-25 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 중합체, 단량체 및 감방사선성 수지 조성물의 제조 방법
JP5782283B2 (ja) * 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
JP5965682B2 (ja) * 2012-03-12 2016-08-10 東京応化工業株式会社 高分子化合物の製造方法及びレジストパターン形成方法
CN108178807B (zh) * 2016-12-08 2022-05-03 复旦大学 一种光产酸剂及其制备方法和应用
JP7076207B2 (ja) * 2017-12-28 2022-05-27 東京応化工業株式会社 レジストパターン形成方法
CN112987510A (zh) * 2021-03-09 2021-06-18 史耿共我 一种使用负性黑色光刻胶的夹层沉浸式光刻方法

Family Cites Families (18)

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JP2594112B2 (ja) * 1987-05-28 1997-03-26 日本ペイント株式会社 ポジ型感光性樹脂組成物
DE3914407A1 (de) * 1989-04-29 1990-10-31 Basf Ag Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial
JP3382081B2 (ja) * 1995-06-01 2003-03-04 株式会社東芝 レジストおよびこれを用いたパターン形成方法
JP3613491B2 (ja) * 1996-06-04 2005-01-26 富士写真フイルム株式会社 感光性組成物
JPH10111563A (ja) * 1996-10-07 1998-04-28 Hitachi Ltd パタン形成方法及びそれを用いた半導体装置の製造方法並びに感放射線組成物
JPH10221852A (ja) * 1997-02-06 1998-08-21 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP2002072483A (ja) * 2000-09-04 2002-03-12 Fuji Photo Film Co Ltd 電子線又はｘ線用ポジ型レジスト組成物
JP2002323763A (ja) * 2001-02-22 2002-11-08 Fuji Photo Film Co Ltd 感光性組成物
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US6720430B2 (en) * 2002-05-28 2004-04-13 Everlight Usa, Inc. Monomer for chemical amplified photoresist compositions
JP4273919B2 (ja) * 2002-10-16 2009-06-03 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
JP4434762B2 (ja) * 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
EP1598701A4 (en) * 2003-02-25 2009-12-09 Tokyo Ohka Kogyo Co Ltd PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIN PATTERN
JP4244755B2 (ja) * 2003-09-09 2009-03-25 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR20050108277A (ko) * 2004-05-12 2005-11-16 주식회사 동진쎄미켐 광산발생 작용성 모노머, 이를 포함하는 감광성 폴리머 및화학증폭형 포토레지스트 조성물
JP4794835B2 (ja) * 2004-08-03 2011-10-19 東京応化工業株式会社 高分子化合物、酸発生剤、ポジ型レジスト組成物、およびレジストパターン形成方法
US7459261B2 (en) * 2005-01-06 2008-12-02 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US7629106B2 (en) * 2005-11-16 2009-12-08 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same

Also Published As

Publication number Publication date
WO2006067944A1 (ja) 2006-06-29
KR100875871B1 (ko) 2008-12-26
KR20070086346A (ko) 2007-08-27
CN101080673B (zh) 2011-08-17
US20100028799A1 (en) 2010-02-04
EP1830227A1 (en) 2007-09-05
TWI283337B (en) 2007-07-01
JP4597655B2 (ja) 2010-12-15
EP1830227A4 (en) 2008-12-31
JP2006171656A (ja) 2006-06-29
CN101080673A (zh) 2007-11-28

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