TW200625496A - Patterned wafer thickness detection system - Google Patents

Patterned wafer thickness detection system

Info

Publication number
TW200625496A
TW200625496A TW095100753A TW95100753A TW200625496A TW 200625496 A TW200625496 A TW 200625496A TW 095100753 A TW095100753 A TW 095100753A TW 95100753 A TW95100753 A TW 95100753A TW 200625496 A TW200625496 A TW 200625496A
Authority
TW
Taiwan
Prior art keywords
substrate
electromagnetic radiation
features
detection mechanism
deposition process
Prior art date
Application number
TW095100753A
Other languages
English (en)
Inventor
yu-ping Gu
Manoocher Birang
Arulkumar Shanmugasundram
Dmitry Lubomirsky
Joseph J Stevens
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200625496A publication Critical patent/TW200625496A/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW095100753A 2005-01-11 2006-01-09 Patterned wafer thickness detection system TW200625496A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/034,349 US20060062897A1 (en) 2004-09-17 2005-01-11 Patterned wafer thickness detection system

Publications (1)

Publication Number Publication Date
TW200625496A true TW200625496A (en) 2006-07-16

Family

ID=36282906

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100753A TW200625496A (en) 2005-01-11 2006-01-09 Patterned wafer thickness detection system

Country Status (4)

Country Link
US (1) US20060062897A1 (zh)
JP (1) JP2008532258A (zh)
TW (1) TW200625496A (zh)
WO (1) WO2006076248A1 (zh)

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US7736928B2 (en) * 2006-12-01 2010-06-15 Applied Materials, Inc. Precision printing electroplating through plating mask on a solar cell substrate
US7799182B2 (en) * 2006-12-01 2010-09-21 Applied Materials, Inc. Electroplating on roll-to-roll flexible solar cell substrates
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US7704352B2 (en) * 2006-12-01 2010-04-27 Applied Materials, Inc. High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate
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US20100126849A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Apparatus and method for forming 3d nanostructure electrode for electrochemical battery and capacitor
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WO2012040705A2 (en) * 2010-09-24 2012-03-29 Rudolph Technologies, Inc. Support for semiconductor substrate
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US11018149B2 (en) 2014-03-27 2021-05-25 Intel Corporation Building stacked hollow channels for a three dimensional circuit device
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9263459B1 (en) * 2014-09-26 2016-02-16 Intel Corporation Capping poly channel pillars in stacked circuits
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
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US11201078B2 (en) * 2017-02-14 2021-12-14 Applied Materials, Inc. Substrate position calibration for substrate supports in substrate processing systems
US10515862B2 (en) 2017-04-05 2019-12-24 Applied Materials, Inc. Wafer based corrosion and time dependent chemical effects
KR20220159431A (ko) * 2020-03-27 2022-12-02 램 리써치 코포레이션 빔 투과형 레이저 센서를 사용한 인-시츄 (in-situ) 웨이퍼 두께 및 갭 모니터링
US20220064784A1 (en) * 2020-09-03 2022-03-03 Applied Materials, Inc. Methods of selective deposition
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Also Published As

Publication number Publication date
WO2006076248A1 (en) 2006-07-20
US20060062897A1 (en) 2006-03-23
JP2008532258A (ja) 2008-08-14

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