TW200621955A - Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositions - Google Patents
Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositionsInfo
- Publication number
- TW200621955A TW200621955A TW094128211A TW94128211A TW200621955A TW 200621955 A TW200621955 A TW 200621955A TW 094128211 A TW094128211 A TW 094128211A TW 94128211 A TW94128211 A TW 94128211A TW 200621955 A TW200621955 A TW 200621955A
- Authority
- TW
- Taiwan
- Prior art keywords
- slurry compositions
- methods
- glycol
- polishing
- examples
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 4
- 239000002002 slurry Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title 2
- 238000005498 polishing Methods 0.000 title 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 5
- -1 glycol compound Chemical class 0.000 abstract 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 abstract 3
- 239000002280 amphoteric surfactant Substances 0.000 abstract 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 abstract 2
- 239000004475 Arginine Substances 0.000 abstract 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 abstract 1
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 abstract 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 abstract 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 abstract 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 abstract 1
- 239000004472 Lysine Substances 0.000 abstract 1
- 239000002202 Polyethylene glycol Substances 0.000 abstract 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 abstract 1
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 abstract 1
- 229960003237 betaine Drugs 0.000 abstract 1
- 229920001223 polyethylene glycol Polymers 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040064977A KR20060016498A (ko) | 2004-08-18 | 2004-08-18 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200621955A true TW200621955A (en) | 2006-07-01 |
| TWI375712B TWI375712B (en) | 2012-11-01 |
Family
ID=36072818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094128211A TWI375712B (en) | 2004-08-18 | 2005-08-18 | Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositions |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7402261B2 (zh) |
| JP (1) | JP2006060205A (zh) |
| KR (1) | KR20060016498A (zh) |
| CN (1) | CN1737885A (zh) |
| TW (1) | TWI375712B (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100731112B1 (ko) * | 2006-07-24 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 포토 레지스트를 제거하기 위한 ｃｍｐ 슬러리 |
| US20080041813A1 (en) * | 2006-08-21 | 2008-02-21 | Atmel Corporation | Methods and compositions for wet etching |
| UA97482C2 (ru) * | 2006-08-30 | 2012-02-27 | Сейнт-Гобейн Серамикс Энд Пластикс, Инк. | Композиция носителя для применения при изготовлении пульпы, предназначенной для обработки методом свободного абразива, способ получения композиции, способ ее применения, пульпа, предназначена для обработки методом свободного абразива, и процесс диссипации тепла при обработке методом свободного абразива |
| US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
| KR100948814B1 (ko) * | 2006-09-27 | 2010-03-24 | 테크노세미켐 주식회사 | 텅스텐 배선 형성용 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법 |
| KR100873259B1 (ko) * | 2006-12-28 | 2008-12-11 | 주식회사 실트론 | 연마장치 |
| MY155239A (en) * | 2007-07-26 | 2015-09-30 | Cabot Microelectronics Corp | Compositions and methods for chemical-mechanical polishing of phase change materials |
| JPWO2009096495A1 (ja) | 2008-02-01 | 2011-05-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| KR101279962B1 (ko) * | 2008-12-18 | 2013-07-05 | 제일모직주식회사 | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 |
| KR101411019B1 (ko) * | 2011-12-29 | 2014-06-24 | 제일모직주식회사 | Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| JP6243671B2 (ja) * | 2013-09-13 | 2017-12-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20150104940A1 (en) * | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
| JP6542766B2 (ja) * | 2013-10-23 | 2019-07-10 | ドンジン セミケム カンパニー リミテッドＤｏｎｇｊｉｎ Ｓｅｍｉｃｈｅｍ Ｃｏ．， Ｌｔｄ． | 金属膜研磨スラリー組成物、及びこれを利用した金属膜研磨時に発生するスクラッチの減少方法 |
| KR101513606B1 (ko) * | 2013-12-04 | 2015-04-20 | 주식회사 케이씨텍 | 슬러리 조성물 |
| CN103923606A (zh) * | 2014-04-04 | 2014-07-16 | 湖南省美程陶瓷科技有限公司 | 一种滑石瓷复合助磨剂及其制备方法 |
| JP6382780B2 (ja) * | 2014-09-30 | 2018-08-29 | 信越化学工業株式会社 | 導電性高分子組成物、被覆品、パターン形成方法、及び基板。 |
| US9778570B2 (en) * | 2015-01-30 | 2017-10-03 | Shin-Etsu Chemical Co., Ltd. | Conductive polymer composition, coated article, patterning process and substrate |
| US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| KR101761789B1 (ko) | 2015-12-24 | 2017-07-26 | 주식회사 케이씨텍 | 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물 |
| US10600655B2 (en) * | 2017-08-10 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5037159B2 (zh) * | 1973-02-21 | 1975-12-01 | ||
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP2002511650A (ja) | 1998-04-10 | 2002-04-16 | フェロー コーポレイション | 化学的−機械的金属表面研磨用スラリ |
| JP2000001666A (ja) * | 1998-06-16 | 2000-01-07 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ− |
| US7250369B1 (en) | 1998-12-28 | 2007-07-31 | Hitachi, Ltd. | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same |
| US6503418B2 (en) * | 1999-11-04 | 2003-01-07 | Advanced Micro Devices, Inc. | Ta barrier slurry containing an organic additive |
| US6508953B1 (en) * | 2000-10-19 | 2003-01-21 | Ferro Corporation | Slurry for chemical-mechanical polishing copper damascene structures |
| US6465553B2 (en) * | 2001-01-03 | 2002-10-15 | Isp Investments Inc. | Gum slurries |
| US6509007B2 (en) * | 2001-03-19 | 2003-01-21 | The Procter & Gamble Company | Oral care kits and compositions |
| US6540935B2 (en) * | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
| KR100760113B1 (ko) * | 2001-11-27 | 2007-09-18 | 후지쯔 가부시끼가이샤 | 레지스트 패턴 후막화 재료, 레지스트 패턴 및 그의 제조방법, 및 반도체 장치 및 그의 제조 방법 |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
| US7087529B2 (en) * | 2003-10-02 | 2006-08-08 | Amcol International Corporation | Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces |
| US20050090106A1 (en) * | 2003-10-22 | 2005-04-28 | Jinru Bian | Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent |
| KR100600429B1 (ko) * | 2003-12-16 | 2006-07-13 | 주식회사 엘지화학 | 산화세륨을 포함하는 ｃｍｐ용 슬러리 |
| US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
-
2004
- 2004-08-18 KR KR1020040064977A patent/KR20060016498A/ko not_active Application Discontinuation
-
2005
- 2005-07-27 JP JP2005217769A patent/JP2006060205A/ja not_active Withdrawn
- 2005-08-17 US US11/205,029 patent/US7402261B2/en not_active Expired - Fee Related
- 2005-08-18 TW TW094128211A patent/TWI375712B/zh not_active IP Right Cessation
- 2005-08-18 CN CNA2005100966198A patent/CN1737885A/zh active Pending
-
2008
- 2008-05-29 US US12/128,675 patent/US8007676B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20080227296A1 (en) | 2008-09-18 |
| US7402261B2 (en) | 2008-07-22 |
| KR20060016498A (ko) | 2006-02-22 |
| TWI375712B (en) | 2012-11-01 |
| JP2006060205A (ja) | 2006-03-02 |
| CN1737885A (zh) | 2006-02-22 |
| US20060060568A1 (en) | 2006-03-23 |
| US8007676B2 (en) | 2011-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |