TW200620511A - Semiconductor device and method of assembling semiconductor device - Google Patents

Semiconductor device and method of assembling semiconductor device

Info

Publication number
TW200620511A
TW200620511A TW094134980A TW94134980A TW200620511A TW 200620511 A TW200620511 A TW 200620511A TW 094134980 A TW094134980 A TW 094134980A TW 94134980 A TW94134980 A TW 94134980A TW 200620511 A TW200620511 A TW 200620511A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor chip
substrate
assembling
base substrate
Prior art date
Application number
TW094134980A
Other languages
English (en)
Other versions
TWI294657B (en
Inventor
Shoko Omizo
Mikio Matsui
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200620511A publication Critical patent/TW200620511A/zh
Application granted granted Critical
Publication of TWI294657B publication Critical patent/TWI294657B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Combinations Of Printed Boards (AREA)
TW094134980A 2004-10-13 2005-10-06 Semiconductor device and method of assembling semiconductor device TWI294657B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004298740A JP2006114604A (ja) 2004-10-13 2004-10-13 半導体装置及びその組立方法

Publications (2)

Publication Number Publication Date
TW200620511A true TW200620511A (en) 2006-06-16
TWI294657B TWI294657B (en) 2008-03-11

Family

ID=36145871

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134980A TWI294657B (en) 2004-10-13 2005-10-06 Semiconductor device and method of assembling semiconductor device

Country Status (5)

Country Link
US (2) US7276784B2 (zh)
JP (1) JP2006114604A (zh)
KR (1) KR100730255B1 (zh)
CN (1) CN1763942A (zh)
TW (1) TWI294657B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770401B (zh) * 2019-03-07 2022-07-11 日商鎧俠股份有限公司 半導體裝置及其製造方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114604A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 半導体装置及びその組立方法
US7545031B2 (en) * 2005-04-11 2009-06-09 Stats Chippac Ltd. Multipackage module having stacked packages with asymmetrically arranged die and molding
WO2006109857A1 (ja) * 2005-04-11 2006-10-19 Elpida Memory, Inc. 半導体装置
US7919844B2 (en) 2005-05-26 2011-04-05 Aprolase Development Co., Llc Tier structure with tier frame having a feedthrough structure
US7768113B2 (en) * 2005-05-26 2010-08-03 Volkan Ozguz Stackable tier structure comprising prefabricated high density feedthrough
JP5116268B2 (ja) * 2005-08-31 2013-01-09 キヤノン株式会社 積層型半導体装置およびその製造方法
KR100652440B1 (ko) * 2005-10-27 2006-12-01 삼성전자주식회사 반도체 패키지, 그 패키지를 이용한 스택 패키지 및 그스택 패키지 형성 방법
JP4528715B2 (ja) * 2005-11-25 2010-08-18 株式会社東芝 半導体装置及びその製造方法
US20070202680A1 (en) * 2006-02-28 2007-08-30 Aminuddin Ismail Semiconductor packaging method
DE102006037538B4 (de) * 2006-08-10 2016-03-10 Infineon Technologies Ag Elektronisches Bauteil, elektronischer Bauteilstapel und Verfahren zu deren Herstellung sowie Verwendung einer Kügelchenplatziermaschine zur Durchführung eines Verfahrens zum Herstellen eines elektronischen Bauteils bzw. Bauteilstapels
US7608921B2 (en) * 2006-12-07 2009-10-27 Stats Chippac, Inc. Multi-layer semiconductor package
JP5179787B2 (ja) * 2007-06-22 2013-04-10 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
FR2939963B1 (fr) * 2008-12-11 2011-08-05 St Microelectronics Grenoble Procede de fabrication d'un support de composant semi-conducteur, support et dispositif semi-conducteur
JP5789431B2 (ja) * 2011-06-30 2015-10-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2012134572A (ja) * 2012-04-12 2012-07-12 Lapis Semiconductor Co Ltd 半導体装置
US9455353B2 (en) * 2012-07-31 2016-09-27 Robert Bosch Gmbh Substrate with multiple encapsulated devices
WO2015009702A1 (en) * 2013-07-15 2015-01-22 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294423A (ja) * 1997-04-17 1998-11-04 Nec Corp 半導体装置
JPH11103158A (ja) 1997-09-26 1999-04-13 Olympus Optical Co Ltd プリント配線板へのフリップチップ実装方法および実装構造
US6451624B1 (en) * 1998-06-05 2002-09-17 Micron Technology, Inc. Stackable semiconductor package having conductive layer and insulating layers and method of fabrication
US6313522B1 (en) * 1998-08-28 2001-11-06 Micron Technology, Inc. Semiconductor structure having stacked semiconductor devices
JP2000286380A (ja) 1999-03-30 2000-10-13 Nec Corp 半導体の実装構造および製造方法
TW472330B (en) * 1999-08-26 2002-01-11 Toshiba Corp Semiconductor device and the manufacturing method thereof
JP3999945B2 (ja) * 2001-05-18 2007-10-31 株式会社東芝 半導体装置の製造方法
JP2003007972A (ja) 2001-06-27 2003-01-10 Toshiba Corp 積層型半導体装置及びその製造方法
JP2004047702A (ja) 2002-07-11 2004-02-12 Toshiba Corp 半導体装置積層モジュール
JP2006114604A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 半導体装置及びその組立方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770401B (zh) * 2019-03-07 2022-07-11 日商鎧俠股份有限公司 半導體裝置及其製造方法

Also Published As

Publication number Publication date
KR20060052210A (ko) 2006-05-19
KR100730255B1 (ko) 2007-06-20
JP2006114604A (ja) 2006-04-27
US7276784B2 (en) 2007-10-02
US20060079020A1 (en) 2006-04-13
TWI294657B (en) 2008-03-11
US20070292989A1 (en) 2007-12-20
CN1763942A (zh) 2006-04-26

Similar Documents

Publication Publication Date Title
TW200620511A (en) Semiconductor device and method of assembling semiconductor device
TW200644187A (en) Semiconductor device and method for manufacturing semiconductor device
TW200725859A (en) Structure and method for packaging a chip
TW200603374A (en) Semiconductor device and method of manufacturing the same
TW200741997A (en) Stacked package structure and method for manufacturing the same
TW200614469A (en) Heat dissipating package structure and method for fabricating the same
TW200605318A (en) Semiconductor device having adhesion increasing film and method of fabricating the same
TW200640325A (en) Wiring board manufacturing method
TW200739972A (en) Light-emitting device and method for manufacturing the same
TW200737383A (en) Substrate with built-in chip and method for manufacturing substrate with built-in chip
TW200512944A (en) Overmolded optical package
TW200610116A (en) Micro-electronic package structure and method for fabricating the same
TW200627563A (en) Bump-less chip package
WO2008093586A1 (ja) 樹脂封止型半導体装置およびその製造方法
TW200625561A (en) Semiconductor device
TW200735301A (en) Integrated circuit package system with die on base package
SG151203A1 (en) Integrated circuit package system with warp-free chip
TW200733367A (en) Manufacturing method of semiconductor device
TW200709378A (en) Chip package structure
TW200623391A (en) Semiconductor device
TW200729429A (en) Semiconductor package structure and fabrication method thereof
TW200618289A (en) Integrated circuit and method for manufacturing
EP1850381A3 (en) Mounting substrate
TW200707605A (en) Substrate for manufacturing semiconductor device, semiconductor device manufacturing method
TW200713397A (en) Intergrated circuit chip and manufacturing process thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees