TW200617219A - Partially devitrified crucible - Google Patents

Partially devitrified crucible

Info

Publication number
TW200617219A
TW200617219A TW094124802A TW94124802A TW200617219A TW 200617219 A TW200617219 A TW 200617219A TW 094124802 A TW094124802 A TW 094124802A TW 94124802 A TW94124802 A TW 94124802A TW 200617219 A TW200617219 A TW 200617219A
Authority
TW
Taiwan
Prior art keywords
sidewall
crucible
portions
vitreous
devitrification
Prior art date
Application number
TW094124802A
Other languages
English (en)
Other versions
TWI338727B (en
Inventor
John D Holder
Richard J Phillips
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of TW200617219A publication Critical patent/TW200617219A/zh
Application granted granted Critical
Publication of TWI338727B publication Critical patent/TWI338727B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
TW094124802A 2004-07-23 2005-07-22 Partially devitrified crucible TWI338727B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/898,148 US7497907B2 (en) 2004-07-23 2004-07-23 Partially devitrified crucible

Publications (2)

Publication Number Publication Date
TW200617219A true TW200617219A (en) 2006-06-01
TWI338727B TWI338727B (en) 2011-03-11

Family

ID=35276081

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094124802A TWI338727B (en) 2004-07-23 2005-07-22 Partially devitrified crucible

Country Status (7)

Country Link
US (1) US7497907B2 (zh)
EP (1) EP1781843B1 (zh)
JP (1) JP5127451B2 (zh)
KR (2) KR101251674B1 (zh)
CN (1) CN101031675B (zh)
TW (1) TWI338727B (zh)
WO (1) WO2006019913A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7716948B2 (en) 2006-12-18 2010-05-18 Heraeus Shin-Etsu America, Inc. Crucible having a doped upper wall portion and method for making the same
JP2012533507A (ja) * 2009-07-16 2012-12-27 エムイーエムシー・シンガポール・プライベイト・リミテッド 被覆坩堝並びに被覆坩堝の作製および使用方法
JP5058378B2 (ja) 2009-09-09 2012-10-24 ジャパンスーパークォーツ株式会社 複合ルツボ
SG181425A1 (en) * 2009-12-04 2012-07-30 Saint Gobain Ind Keramik Roedental Gmbh Device for holding silicon melt
JP5574534B2 (ja) 2010-12-28 2014-08-20 株式会社Ｓｕｍｃｏ 複合ルツボ
EP2616575A4 (en) * 2011-05-25 2015-05-20 Saint Gobain Res Shanghai Co Ltd SILICATE BAR AND MANUFACTURING METHOD THEREFOR
US8713966B2 (en) 2011-11-30 2014-05-06 Corning Incorporated Refractory vessels and methods for forming same
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
DE112018002317B4 (de) * 2017-05-02 2024-08-22 Sumco Corporation Quarzglastiegel und herstellungsverfahren dafür
JP6743797B2 (ja) * 2017-09-29 2020-08-19 株式会社Sumco 坩堝支持台座、石英坩堝支持装置およびシリコン単結晶の製造方法
CN111936677B (zh) * 2018-02-23 2022-07-15 胜高股份有限公司 石英玻璃坩埚
JP7157932B2 (ja) * 2019-01-11 2022-10-21 株式会社Sumco シリカガラスルツボの製造装置および製造方法
DE112021006516T5 (de) * 2020-12-18 2023-10-19 Sumco Corporation Quarzglastiegel, herstellungsverfahren dafür und herstellungsverfahren für silicium-einkristall

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US4218418A (en) 1978-06-22 1980-08-19 Crystal Systems, Inc. Processes of casting an ingot and making a silica container
US4256530A (en) 1978-12-07 1981-03-17 Crystal Systems Inc. Crystal growing
US5389582A (en) 1985-11-06 1995-02-14 Loxley; Ted A. Cristobalite reinforcement of quartz glass
US5053359A (en) 1989-03-24 1991-10-01 Pyromatics, Inc. Cristobalite reinforcement of high silica glass
JP2888079B2 (ja) 1993-02-04 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ用ルツボ
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
JP3470479B2 (ja) 1995-12-27 2003-11-25 三菱住友シリコン株式会社 単結晶引上装置
JPH10203893A (ja) * 1997-01-20 1998-08-04 Mitsubishi Materials Shilicon Corp 高強度石英ガラスルツボ及びその製造方法
US6106610A (en) 1997-09-30 2000-08-22 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass crucible for producing silicone single crystal and method for producing the crucible
US5919306A (en) 1997-11-03 1999-07-06 Sumitomo Sitix Corporation Silicon melting crucible
JP4217844B2 (ja) 1998-06-18 2009-02-04 ジャパンスーパークォーツ株式会社 複合ルツボとその製造方法および再生方法
US6328796B1 (en) * 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
JP2001267555A (ja) * 2000-03-22 2001-09-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
WO2002040732A1 (en) 2000-11-15 2002-05-23 G.T. Equipment Technologies Inc. A protective layer for quartz crucibles used for silicon crystallization
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
US6447601B1 (en) 2001-03-19 2002-09-10 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
US6641663B2 (en) 2001-12-12 2003-11-04 Heracus Shin-Estu America Silica crucible with inner layer crystallizer and method
US20030012899A1 (en) 2001-07-16 2003-01-16 Heraeus Shin-Etsu America Doped silica glass crucible for making a silicon ingot
JP2003095678A (ja) * 2001-07-16 2003-04-03 Heraeus Shin-Etsu America シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法
JP4288646B2 (ja) * 2001-10-16 2009-07-01 ジャパンスーパークォーツ株式会社 石英ガラスルツボの表面改質方法と表面改質ルツボ
DE10217946A1 (de) 2002-04-22 2003-11-13 Heraeus Quarzglas Quarzglastiegel und Verfahren zur Herstellung desselben
JP4444559B2 (ja) 2002-10-09 2010-03-31 ジャパンスーパークォーツ株式会社 石英ガラスルツボの強化方法とシリコン単結晶の引き上げ方法
DE10324440A1 (de) 2003-05-28 2004-12-16 Wacker-Chemie Gmbh Verfahren zur Herstellung eines innenseitig verglasten SiO2-Tiegels
DE602004029057D1 (de) 2003-05-30 2010-10-21 Heraeus Quarzglas Quarzglastiegel zum ziehen von siliciumeinkristall
JP4773340B2 (ja) 2004-03-31 2011-09-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置
ATE398196T1 (de) 2004-04-29 2008-07-15 Vesuvius Crucible Co Tiegel für die kristallisation von silicium
JP3818311B1 (ja) 2005-03-23 2006-09-06 住友電気工業株式会社 結晶育成用坩堝
US7716948B2 (en) 2006-12-18 2010-05-18 Heraeus Shin-Etsu America, Inc. Crucible having a doped upper wall portion and method for making the same

Also Published As

Publication number Publication date
EP1781843A1 (en) 2007-05-09
JP2008507467A (ja) 2008-03-13
US7497907B2 (en) 2009-03-03
CN101031675A (zh) 2007-09-05
KR20130022428A (ko) 2013-03-06
EP1781843B1 (en) 2012-06-06
TWI338727B (en) 2011-03-11
WO2006019913A1 (en) 2006-02-23
JP5127451B2 (ja) 2013-01-23
US20060016389A1 (en) 2006-01-26
KR20070059064A (ko) 2007-06-11
KR101251674B1 (ko) 2013-04-05
CN101031675B (zh) 2012-10-10

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees