TW200616308A - Magnetic field enhanced photovoltaic devices - Google Patents

Magnetic field enhanced photovoltaic devices

Info

Publication number
TW200616308A
TW200616308A TW093133856A TW93133856A TW200616308A TW 200616308 A TW200616308 A TW 200616308A TW 093133856 A TW093133856 A TW 093133856A TW 93133856 A TW93133856 A TW 93133856A TW 200616308 A TW200616308 A TW 200616308A
Authority
TW
Taiwan
Prior art keywords
electrode
magnetic field
photoelectric conversion
conversion layer
electrons
Prior art date
Application number
TW093133856A
Other languages
English (en)
Other versions
TWI270242B (en
Inventor
Chia-Fan Chu
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW093133856A priority Critical patent/TWI270242B/zh
Priority to US11/022,794 priority patent/US7109409B2/en
Publication of TW200616308A publication Critical patent/TW200616308A/zh
Application granted granted Critical
Publication of TWI270242B publication Critical patent/TWI270242B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
TW093133856A 2004-11-05 2004-11-05 Magnetic field enhanced photovoltaic devices TWI270242B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW093133856A TWI270242B (en) 2004-11-05 2004-11-05 Magnetic field enhanced photovoltaic devices
US11/022,794 US7109409B2 (en) 2004-11-05 2004-12-28 Magnetic field enhanced photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093133856A TWI270242B (en) 2004-11-05 2004-11-05 Magnetic field enhanced photovoltaic devices

Publications (2)

Publication Number Publication Date
TW200616308A true TW200616308A (en) 2006-05-16
TWI270242B TWI270242B (en) 2007-01-01

Family

ID=36315088

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093133856A TWI270242B (en) 2004-11-05 2004-11-05 Magnetic field enhanced photovoltaic devices

Country Status (2)

Country Link
US (1) US7109409B2 (zh)
TW (1) TWI270242B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
US8558105B2 (en) * 2006-05-01 2013-10-15 Wake Forest University Organic optoelectronic devices and applications thereof
JP5417170B2 (ja) 2006-05-01 2014-02-12 ウェイク フォレスト ユニバーシティ 光起電性装置及びそれを含む光電子デバイス
US20080149178A1 (en) * 2006-06-27 2008-06-26 Marisol Reyes-Reyes Composite organic materials and applications thereof
ES2375418T3 (es) 2006-08-07 2012-02-29 Wake Forest University Método para producir materiales orgánicos compuestos.
US8736151B2 (en) * 2006-09-26 2014-05-27 Velos Industries, LLC Electric generator
KR20090010485A (ko) * 2007-07-23 2009-01-30 엘지전자 주식회사 자계를 이용한 태양전지 및 그 제조 방법
CN101911331B (zh) * 2007-11-01 2013-05-29 维克森林大学 横向有机光电器件及其应用
JP5229869B2 (ja) * 2008-01-09 2013-07-03 独立行政法人産業技術総合研究所 不揮発性光メモリ素子及びその動作方法
US20100096003A1 (en) * 2008-10-21 2010-04-22 Dale James Hobbie Article of manufacture for a magnetically induced photovoltaic solar cell device and the process for creating the magnetic and/or electromagnetic field
US20100282304A1 (en) * 2008-11-18 2010-11-11 Industrial Technology Research Institute Solar cell and method of manufacturing the same
KR101135792B1 (ko) * 2010-06-14 2012-08-24 (주)솔라세라믹 이중막 구조의 ｆｔｏ제조방법
KR101135476B1 (ko) * 2010-11-16 2012-04-13 삼성에스디아이 주식회사 염료 감응 태양 전지
KR102341969B1 (ko) * 2012-12-13 2021-12-24 다니엘 스캇 마샬 자기 분극식 광소자
US9191637B2 (en) * 2013-09-10 2015-11-17 Kabushiki Kaisha Toshiba Solid-state imaging apparatus
KR20150055663A (ko) * 2013-11-13 2015-05-22 에스케이하이닉스 주식회사 이미지센서 및 그의 제조 방법
US20150236180A1 (en) * 2014-02-18 2015-08-20 Robert Edward Sandstrom Method for Improving Photovoltaic Cell Efficiency
US11670726B2 (en) * 2014-02-18 2023-06-06 Robert E. Sandstrom Method for improving photovoltaic cell efficiency
CN105355682A (zh) * 2015-10-30 2016-02-24 苏州天擎电子通讯有限公司 一种高光电转换效率的太阳能电池
CN114792737A (zh) * 2022-04-25 2022-07-26 长沙精英军纳米科技有限公司 一种提高6倍吸收储存释放太阳能的太阳能交流电池

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DE1214807B (de) * 1963-12-18 1966-04-21 Siemens Ag Halbleiterphotoelement
US4051465A (en) * 1973-11-01 1977-09-27 The United States Of America As Represented By The Secretary Of The Army Ferroelectric ceramic devices
US4173497A (en) * 1977-08-26 1979-11-06 Ametek, Inc. Amorphous lead dioxide photovoltaic generator
US4236938A (en) * 1979-07-25 1980-12-02 The United States Of America As Represented By The Secretary Of The Army Efficient high voltage photovoltaic cells
US4355195A (en) * 1980-07-14 1982-10-19 Ralph Sansbury Electromagnetic solar cell
JPS57190235A (en) * 1981-05-19 1982-11-22 Fuji Electric Corp Res & Dev Ltd Photo temperature sensor
JPS59132174A (ja) * 1983-01-19 1984-07-30 Futaba Corp 光起電力素子
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JP4170429B2 (ja) * 1998-01-19 2008-10-22 大日本印刷株式会社 薄膜太陽電池セルパターンの形成法
JP3616824B2 (ja) * 1999-08-06 2005-02-02 スター精密株式会社 ｐｉｎ型光電変換素子及び製造方法
JP4491910B2 (ja) * 2000-05-19 2010-06-30 Ｔｄｋ株式会社 多層機能性膜及びその製造方法
KR100786855B1 (ko) * 2001-08-24 2007-12-20 삼성에스디아이 주식회사 강유전체를 이용한 태양전지
US7045702B2 (en) * 2002-03-19 2006-05-16 Ravindra Kashyap Solar-paneled windmill

Also Published As

Publication number Publication date
US20060096633A1 (en) 2006-05-11
TWI270242B (en) 2007-01-01
US7109409B2 (en) 2006-09-19

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