WO2008143211A1 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
WO2008143211A1
WO2008143211A1 PCT/JP2008/059124 JP2008059124W WO2008143211A1 WO 2008143211 A1 WO2008143211 A1 WO 2008143211A1 JP 2008059124 W JP2008059124 W JP 2008059124W WO 2008143211 A1 WO2008143211 A1 WO 2008143211A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
pin photodiode
light
light shield
nvoc
Prior art date
Application number
PCT/JP2008/059124
Other languages
English (en)
French (fr)
Inventor
Masakazu Satoh
Hiromi Katoh
Benjamin James Hadwen
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to EP08752944.2A priority Critical patent/EP2149914B1/en
Priority to CN2008800046563A priority patent/CN101611499B/zh
Priority to US12/526,887 priority patent/US8368676B2/en
Priority to JP2009515224A priority patent/JP5225985B2/ja
Publication of WO2008143211A1 publication Critical patent/WO2008143211A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J2001/0276—Protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor

Abstract

　ガラス基板（３１４）側からＰＩＮフォトダイオード（４１３）に到達する光を遮光する光シールド（２０４）を導電体で形成し、電源回路（２６６）から光シールド（２０４）に、ＰＩＮフォトダイオード（４１３）のカソードと同じ基準電位（Ｖｒ－ｎＶｏｃ）を与える。これにより、周囲光センサに用いられる光電変換素子への誘導ノイズをさらに低減することのできる表示装置を実現する。
PCT/JP2008/059124 2007-05-18 2008-05-19 表示装置 WO2008143211A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08752944.2A EP2149914B1 (en) 2007-05-18 2008-05-19 Display device
CN2008800046563A CN101611499B (zh) 2007-05-18 2008-05-19 显示装置
US12/526,887 US8368676B2 (en) 2007-05-18 2008-05-19 Display device with light shield
JP2009515224A JP5225985B2 (ja) 2007-05-18 2008-05-19 表示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007133506 2007-05-18
JP2007-133506 2007-05-18

Publications (1)

Publication Number Publication Date
WO2008143211A1 true WO2008143211A1 (ja) 2008-11-27

Family

ID=40031909

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059124 WO2008143211A1 (ja) 2007-05-18 2008-05-19 表示装置

Country Status (5)

Country Link
US (1) US8368676B2 (ja)
EP (1) EP2149914B1 (ja)
JP (1) JP5225985B2 (ja)
CN (1) CN101611499B (ja)
WO (1) WO2008143211A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032632A1 (ja) * 2008-09-19 2010-03-25 株式会社 東芝 光検出素子、光検出装置、及び、光検出機能付き表示装置
JP2010232264A (ja) * 2009-03-26 2010-10-14 Toshiba Corp 光検出装置及び表示装置
KR20110002812A (ko) * 2009-07-02 2011-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널 및 그 구동 방법
CN105095800A (zh) * 2014-05-08 2015-11-25 中芯国际集成电路制造(上海)有限公司 光检测器

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GB2448869A (en) * 2007-04-20 2008-11-05 Sharp Kk Stray light compensation in ambient light sensor
KR100958028B1 (ko) * 2008-02-13 2010-05-17 삼성모바일디스플레이주식회사 광센서 및 그를 이용한 평판표시장치
DE102011119661B4 (de) 2011-11-29 2013-08-01 Austriamicrosystems Ag Modulschaltung, Anzeigemodul und Verfahren zum Bereitstellen eines Ausgangssignals
US9823117B2 (en) 2012-05-08 2017-11-21 Nokia Technologies Oy Ambient light detection and data processing
CN103207490B (zh) * 2013-03-28 2015-10-14 北京京东方光电科技有限公司 一种阵列基板及其制造方法和显示装置
KR102151206B1 (ko) * 2014-07-07 2020-09-03 삼성디스플레이 주식회사 이동 단말기 및 그 제어방법
GB2529567B (en) * 2015-09-22 2016-11-23 X-Fab Semiconductor Foundries Ag Light shield for light sensitive elements
US11114497B2 (en) * 2017-07-18 2021-09-07 Boe Technology Group Co., Ltd. Sensor, array substrate containing sensor, display panel containing array substrate
CN110504275B (zh) 2018-05-17 2021-11-12 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板和显示装置
CN109887965B (zh) * 2019-02-20 2022-01-21 京东方科技集团股份有限公司 显示模组及其制造方法、显示装置
KR102652033B1 (ko) * 2019-08-07 2024-03-26 엘지디스플레이 주식회사 유기 발광 표시 장치
CN113299674B (zh) * 2021-05-08 2022-09-09 武汉华星光电技术有限公司 阵列基板
CN114122175A (zh) * 2021-11-26 2022-03-01 阳光电源股份有限公司 一种光伏系统和光伏组件

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032632A1 (ja) * 2008-09-19 2010-03-25 株式会社 東芝 光検出素子、光検出装置、及び、光検出機能付き表示装置
JP2010232264A (ja) * 2009-03-26 2010-10-14 Toshiba Corp 光検出装置及び表示装置
KR20110002812A (ko) * 2009-07-02 2011-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널 및 그 구동 방법
KR101703510B1 (ko) 2009-07-02 2017-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널 및 그 구동 방법
CN105095800A (zh) * 2014-05-08 2015-11-25 中芯国际集成电路制造(上海)有限公司 光检测器
CN105095800B (zh) * 2014-05-08 2018-07-20 中芯国际集成电路制造(上海)有限公司 光检测器

Also Published As

Publication number Publication date
CN101611499A (zh) 2009-12-23
EP2149914A1 (en) 2010-02-03
US20100110096A1 (en) 2010-05-06
JPWO2008143211A1 (ja) 2010-08-05
JP5225985B2 (ja) 2013-07-03
US8368676B2 (en) 2013-02-05
EP2149914A4 (en) 2011-04-20
EP2149914B1 (en) 2013-07-10
CN101611499B (zh) 2011-06-22

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