TW200616044A - Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials - Google Patents
Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materialsInfo
- Publication number
- TW200616044A TW200616044A TW094126802A TW94126802A TW200616044A TW 200616044 A TW200616044 A TW 200616044A TW 094126802 A TW094126802 A TW 094126802A TW 94126802 A TW94126802 A TW 94126802A TW 200616044 A TW200616044 A TW 200616044A
- Authority
- TW
- Taiwan
- Prior art keywords
- organic solvents
- semiconductor processing
- sacrificial materials
- ozone dissolved
- processing utilizing
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title 1
- 239000003960 organic solvent Substances 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/927,572 US7235479B2 (en) | 2004-08-26 | 2004-08-26 | Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200616044A true TW200616044A (en) | 2006-05-16 |
Family
ID=35943894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094126802A TW200616044A (en) | 2004-08-26 | 2005-08-08 | Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials |
Country Status (3)
Country | Link |
---|---|
US (1) | US7235479B2 (zh) |
TW (1) | TW200616044A (zh) |
WO (1) | WO2006025969A2 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4948278B2 (ja) * | 2006-08-30 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
WO2008044181A1 (en) * | 2006-10-09 | 2008-04-17 | Nxp B.V. | Method of forming an interconnect structure |
KR100802226B1 (ko) * | 2006-12-21 | 2008-02-11 | 주식회사 하이닉스반도체 | 듀얼 다마신 패턴 형성 방법 |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US7682924B2 (en) * | 2007-08-13 | 2010-03-23 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US20090117500A1 (en) * | 2007-11-01 | 2009-05-07 | Roman Gouk | Photoresist strip with ozonated acetic acid solution |
US8388851B2 (en) | 2008-01-08 | 2013-03-05 | Micron Technology, Inc. | Capacitor forming methods |
US8274777B2 (en) | 2008-04-08 | 2012-09-25 | Micron Technology, Inc. | High aspect ratio openings |
US7759193B2 (en) | 2008-07-09 | 2010-07-20 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8691701B2 (en) * | 2009-05-08 | 2014-04-08 | Lam Research Corporation | Strip with reduced low-K dielectric damage |
US20110217848A1 (en) * | 2010-03-03 | 2011-09-08 | Bergman Eric J | Photoresist removing processor and methods |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
US8946043B2 (en) | 2011-12-21 | 2015-02-03 | Micron Technology, Inc. | Methods of forming capacitors |
US8652926B1 (en) | 2012-07-26 | 2014-02-18 | Micron Technology, Inc. | Methods of forming capacitors |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE522926T1 (de) * | 1997-02-14 | 2011-09-15 | Imec | Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche |
US6440647B1 (en) * | 1998-02-26 | 2002-08-27 | Alpha Metals, Inc. | Resist stripping process |
US6406995B1 (en) * | 1998-09-30 | 2002-06-18 | Intel Corporation | Pattern-sensitive deposition for damascene processing |
US6649515B2 (en) * | 1998-09-30 | 2003-11-18 | Intel Corporation | Photoimageable material patterning techniques useful in fabricating conductive lines in circuit structures |
US6268457B1 (en) * | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
KR100346830B1 (ko) * | 1999-09-29 | 2002-08-03 | 삼성전자 주식회사 | 반도체장치의 전기적 연결 배선 제조방법 |
TW466558B (en) * | 1999-09-30 | 2001-12-01 | Purex Co Ltd | Method of removing contamination adhered to surfaces and apparatus used therefor |
US6444557B1 (en) * | 2000-03-14 | 2002-09-03 | International Business Machines Corporation | Method of forming a damascene structure using a sacrificial conductive layer |
US6323123B1 (en) * | 2000-09-06 | 2001-11-27 | United Microelectronics Corp. | Low-K dual damascene integration process |
WO2002027775A1 (fr) * | 2000-09-28 | 2002-04-04 | Mitsubishi Denki Kabushiki Kaisha | Procede et appareil de traitement de plaquettes |
US6391794B1 (en) * | 2000-12-07 | 2002-05-21 | Micron Technology, Inc. | Composition and method for cleaning residual debris from semiconductor surfaces |
US6867148B2 (en) * | 2001-05-16 | 2005-03-15 | Micron Technology, Inc. | Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions |
US6448185B1 (en) * | 2001-06-01 | 2002-09-10 | Intel Corporation | Method for making a semiconductor device that has a dual damascene interconnect |
JP3914842B2 (ja) * | 2001-10-23 | 2007-05-16 | 有限会社ユーエムエス | 有機被膜の除去方法および除去装置 |
US20040154641A1 (en) * | 2002-05-17 | 2004-08-12 | P.C.T. Systems, Inc. | Substrate processing apparatus and method |
KR100462884B1 (ko) * | 2002-08-21 | 2004-12-17 | 삼성전자주식회사 | 희생충진물질을 이용한 반도체 장치의 듀얼다마신배선형성방법 |
KR100951898B1 (ko) | 2002-12-09 | 2010-04-09 | 삼성전자주식회사 | 포토레지스트 제거용 스트리핑 조성물 및 이를 사용한액정 표시 장치의 박막 트랜지스터 기판의 제조방법 |
KR100487948B1 (ko) * | 2003-03-06 | 2005-05-06 | 삼성전자주식회사 | 이중 다마신 기술을 사용하여 비아콘택 구조체를 형성하는방법 |
KR100610452B1 (ko) * | 2003-04-08 | 2006-08-09 | 주식회사 하이닉스반도체 | 포토레지스트 폴리머 제거용 세정제 조성물 |
US20050191584A1 (en) * | 2004-02-27 | 2005-09-01 | Kevin Shea | Surface treatment of a dry-developed hard mask and surface treatment compositions used therefor |
US7507521B2 (en) * | 2004-08-09 | 2009-03-24 | Intel Corporation | Silicon based optically degraded arc for lithographic patterning |
-
2004
- 2004-08-26 US US10/927,572 patent/US7235479B2/en not_active Expired - Fee Related
-
2005
- 2005-07-22 WO PCT/US2005/025993 patent/WO2006025969A2/en active Application Filing
- 2005-08-08 TW TW094126802A patent/TW200616044A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US7235479B2 (en) | 2007-06-26 |
US20060046467A1 (en) | 2006-03-02 |
WO2006025969A3 (en) | 2006-07-27 |
WO2006025969A2 (en) | 2006-03-09 |
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