TW200615363A - Chemical mechanical polishing compositions and methods relating thereto - Google Patents

Chemical mechanical polishing compositions and methods relating thereto

Info

Publication number
TW200615363A
TW200615363A TW094121112A TW94121112A TW200615363A TW 200615363 A TW200615363 A TW 200615363A TW 094121112 A TW094121112 A TW 094121112A TW 94121112 A TW94121112 A TW 94121112A TW 200615363 A TW200615363 A TW 200615363A
Authority
TW
Taiwan
Prior art keywords
mechanical polishing
chemical mechanical
polishing compositions
methods relating
copolymer
Prior art date
Application number
TW094121112A
Other languages
English (en)
Other versions
TWI396727B (zh
Inventor
Francis J Kelley
John Quanci
Joseph K So
Hong-Yu Wang
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200615363A publication Critical patent/TW200615363A/zh
Application granted granted Critical
Publication of TWI396727B publication Critical patent/TWI396727B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094121112A 2004-07-01 2005-06-24 化學機械研磨用組成物及其相關方法 TWI396727B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/882,568 US7303993B2 (en) 2004-07-01 2004-07-01 Chemical mechanical polishing compositions and methods relating thereto

Publications (2)

Publication Number Publication Date
TW200615363A true TW200615363A (en) 2006-05-16
TWI396727B TWI396727B (zh) 2013-05-21

Family

ID=35512462

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121112A TWI396727B (zh) 2004-07-01 2005-06-24 化學機械研磨用組成物及其相關方法

Country Status (4)

Country Link
US (1) US7303993B2 (zh)
JP (1) JP4937536B2 (zh)
CN (1) CN100355820C (zh)
TW (1) TWI396727B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8734204B2 (en) 2008-04-15 2014-05-27 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US20070232510A1 (en) * 2006-03-29 2007-10-04 Kucera Alvin A Method and composition for selectively stripping silver from a substrate
KR101396055B1 (ko) * 2007-07-05 2014-05-15 히타치가세이가부시끼가이샤 금속막용 연마액 및 연마방법
JP5392080B2 (ja) * 2007-07-10 2014-01-22 日立化成株式会社 金属膜用研磨液及び研磨方法
JP2009050920A (ja) * 2007-08-23 2009-03-12 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2012510161A (ja) * 2008-11-26 2012-04-26 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のための終点制御を伴う化学薬品および研磨剤粒子の二系統混合
TWI431080B (zh) 2009-10-13 2014-03-21 Lg Chemical Ltd 化學機械拋光之漿料組成物及拋光方法
US8192644B2 (en) 2009-10-16 2012-06-05 Fujifilm Planar Solutions, LLC Highly dilutable polishing concentrates and slurries
CN102101976A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种化学机械抛光液
US8536106B2 (en) 2010-04-14 2013-09-17 Ecolab Usa Inc. Ferric hydroxycarboxylate as a builder
JP2012146974A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
KR101480179B1 (ko) * 2011-12-30 2015-01-09 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US8778211B2 (en) 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
KR101566068B1 (ko) 2013-02-13 2015-11-04 제일모직주식회사 Cmp 슬러리 조성물 및 이를 이용한 연마 방법
US10136886B2 (en) 2013-12-20 2018-11-27 Biomet Sports Medicine, Llc Knotless soft tissue devices and techniques
JP6268069B2 (ja) * 2014-09-12 2018-01-24 信越化学工業株式会社 研磨組成物及び研磨方法
CN107109133B (zh) * 2014-12-22 2021-04-13 巴斯夫欧洲公司 化学机械抛光(cmp)组合物在抛光包含钴和/或钴合金的基材中的用途
JP7187770B2 (ja) 2017-11-08 2022-12-13 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
CN114561187B (zh) * 2022-03-07 2022-10-21 山东麦丰新材料科技股份有限公司 一种环保型乳化精磨液及其制备方法
CN115466573B (zh) * 2022-09-05 2024-02-20 广州飞雪芯材有限公司 一种用于单晶硅晶圆片的抛光液及其应用

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002517593A (ja) 1998-06-10 2002-06-18 ロデール ホールディングス インコーポレイテッド 金属ｃｍｐにおける研磨用組成物および研磨方法
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP4538109B2 (ja) * 1999-02-18 2010-09-08 株式会社トッパンＴｄｋレーベル 化学機械研磨組成物
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
JP4832690B2 (ja) 1999-08-24 2011-12-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 絶縁体及び金属のｃｍｐ用組成物及びそれに関する方法
US7232529B1 (en) 1999-08-26 2007-06-19 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP3993369B2 (ja) * 2000-07-14 2007-10-17 株式会社東芝 半導体装置の製造方法
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6605537B2 (en) * 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP4951808B2 (ja) * 2000-10-26 2012-06-13 日立化成工業株式会社 金属用研磨液及び研磨方法
JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
EP1385915A1 (en) * 2001-04-12 2004-02-04 Rodel Holdings, Inc. Polishing composition having a surfactant
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2003068683A (ja) * 2001-08-22 2003-03-07 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
WO2003083920A1 (en) * 2002-03-25 2003-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
US20030219982A1 (en) * 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8734204B2 (en) 2008-04-15 2014-05-27 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same

Also Published As

Publication number Publication date
JP4937536B2 (ja) 2012-05-23
US7303993B2 (en) 2007-12-04
US20060000151A1 (en) 2006-01-05
CN1715311A (zh) 2006-01-04
CN100355820C (zh) 2007-12-19
JP2006019747A (ja) 2006-01-19
TWI396727B (zh) 2013-05-21

Similar Documents

Publication Publication Date Title
TW200615363A (en) Chemical mechanical polishing compositions and methods relating thereto
TW200613521A (en) Chemical mechanical polishing compositions and methods relating thereto
TW200514843A (en) High rate barrier polishing composition
TW200624543A (en) Abrasive-free chemical mechanical polishing compositions and methods relating thereto
MA29160B1 (fr) Derives de triazole substitues, servant d'antagonistes d'ocytocine
TW200626706A (en) Selective barrier slurry for chemical mechanical polishing
MY145938A (en) Peroxide activated oxometalate based formulations for removal of etch residue
DE60124404D1 (de) Cmp-polierzusammensetzung für metall
TW200716793A (en) Leveler compounds
EP1870928A4 (en) POLISHING COMPOSITION
TW200709294A (en) Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
TNSN07235A1 (en) Crystalline forms of (r)-8-chloro-1-methyl- 2,3,4,5-tetrahydro-1h-3-benzazepine hydrochloride
TWI255850B (en) Slurry for chemical mechanical polishing
TW200714697A (en) Aqueous dispersion for chemical mechanical polish, kit for formulating the aqueous dispersion, chemical mechanical polishing method and method for producing semiconductor device
MY142810A (en) Acidic cleaning compositions comprising an acid mixture and ternary solvent mixture
UA97346C2 (ru) Стабильная эмульсионная композиция
WO2009025383A1 (ja) 研磨組成物
PL372141A1 (en) 7-aryl-3,9-diazabicyclo[3.3.1]non-6-ene derivatives and their use as renin inhibitors in the treatment of hypertension, cardiovascular or renal diseases
HK1090098A1 (en) Novel imidazole compound and usage thereof
IL185539A0 (en) Hydrazinocarbonyl-thieno[2,3-c]pyrazoles, preparation method compositions containing same and use
WO2007021617A3 (en) Dosage efficient, storage stable compositions for reducing chromium (vi) in cement
TW200636029A (en) Compositions and methods for chemical mechanical polishing interlevel dielectric layers
TW200621773A (en) Bicyclononene derivatives
GB2412868A (en) Cosmetic compositions containing phenyl silicones
TW200619368A (en) Polishing composition for silicon wafer

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees