TW200614486A - Led chip with integrated fast switching diode for esd protection - Google Patents

Led chip with integrated fast switching diode for esd protection

Info

Publication number
TW200614486A
TW200614486A TW094116731A TW94116731A TW200614486A TW 200614486 A TW200614486 A TW 200614486A TW 094116731 A TW094116731 A TW 094116731A TW 94116731 A TW94116731 A TW 94116731A TW 200614486 A TW200614486 A TW 200614486A
Authority
TW
Taiwan
Prior art keywords
diode
esd protection
esd
led chip
fast switching
Prior art date
Application number
TW094116731A
Other languages
English (en)
Other versions
TWI389287B (zh
Inventor
Jerome Chandra Bhat
Original Assignee
Lumileds Lighting Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds Lighting Llc filed Critical Lumileds Lighting Llc
Publication of TW200614486A publication Critical patent/TW200614486A/zh
Application granted granted Critical
Publication of TWI389287B publication Critical patent/TWI389287B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05666—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
TW094116731A 2004-05-26 2005-05-23 具有用於靜電放電保護之積體快速切換二極體之發光二極體晶片 TWI389287B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/855,277 US7064353B2 (en) 2004-05-26 2004-05-26 LED chip with integrated fast switching diode for ESD protection

Publications (2)

Publication Number Publication Date
TW200614486A true TW200614486A (en) 2006-05-01
TWI389287B TWI389287B (zh) 2013-03-11

Family

ID=34939792

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116731A TWI389287B (zh) 2004-05-26 2005-05-23 具有用於靜電放電保護之積體快速切換二極體之發光二極體晶片

Country Status (4)

Country Link
US (1) US7064353B2 (zh)
EP (1) EP1601019B1 (zh)
JP (1) JP5015433B2 (zh)
TW (1) TWI389287B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9893024B2 (en) 2010-08-30 2018-02-13 Epistar Corporation Light emitting device

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7825491B2 (en) * 2005-11-22 2010-11-02 Shocking Technologies, Inc. Light-emitting device using voltage switchable dielectric material
WO2001017320A1 (en) 1999-08-27 2001-03-08 Lex Kosowsky Current carrying structure using voltage switchable dielectric material
US7695644B2 (en) * 1999-08-27 2010-04-13 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
US7446030B2 (en) * 1999-08-27 2008-11-04 Shocking Technologies, Inc. Methods for fabricating current-carrying structures using voltage switchable dielectric materials
TW200501464A (en) * 2004-08-31 2005-01-01 Ind Tech Res Inst LED chip structure with AC loop
KR100576872B1 (ko) * 2004-09-17 2006-05-10 삼성전기주식회사 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US7473933B2 (en) * 2004-10-29 2009-01-06 Ledengin, Inc. (Cayman) High power LED package with universal bonding pads and interconnect arrangement
US7772609B2 (en) * 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
US7670872B2 (en) * 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US8324641B2 (en) 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
KR100665116B1 (ko) * 2005-01-27 2007-01-09 삼성전기주식회사 Ｅｓｄ 보호용 ｌｅｄ를 구비한 질화갈륨계 발광 소자 및그 제조 방법
JP5043835B2 (ja) * 2005-06-17 2012-10-10 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 光電子応用のための（Ａｌ，Ｇａ，Ｉｎ）ＮとＺｎＯの直接ウェーハ・ボンディング構造とその作製方法
EP1969627A4 (en) 2005-11-22 2010-01-20 Shocking Technologies Inc SEMICONDUCTOR DEVICES COMPRISING VOLTAGE SWITCHING MATERIALS PROVIDING OVERVOLTAGE PROTECTION
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
KR100765075B1 (ko) * 2006-03-26 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광 소자 및 그 제조방법
JP4519097B2 (ja) * 2006-03-29 2010-08-04 ルネサスエレクトロニクス株式会社 半導体装置
US7994514B2 (en) * 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
US7829899B2 (en) * 2006-05-03 2010-11-09 Cree, Inc. Multi-element LED lamp package
KR100924222B1 (ko) * 2006-06-29 2009-11-02 엘지디스플레이 주식회사 정전기 방전 회로 및 이를 구비한 액정표시장치
US20080029405A1 (en) * 2006-07-29 2008-02-07 Lex Kosowsky Voltage switchable dielectric material having conductive or semi-conductive organic material
US7968014B2 (en) 2006-07-29 2011-06-28 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
WO2008017207A1 (fr) * 2006-08-02 2008-02-14 Helio Optoelectronics Corporation Un circuit de diode émettrice de lumière comportant une pluralité de tensions critiques et un dispositif de diode émettrice de lumière
WO2008036423A2 (en) 2006-09-24 2008-03-27 Shocking Technologies, Inc. Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same
JP2010506402A (ja) 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
TWI460881B (zh) 2006-12-11 2014-11-11 Univ California 透明發光二極體
KR100875128B1 (ko) * 2007-01-16 2008-12-22 한국광기술원 고내정전압을 갖는 발광다이오드 및 그의 제조방법
KR20080089859A (ko) * 2007-04-02 2008-10-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
US8436371B2 (en) * 2007-05-24 2013-05-07 Cree, Inc. Microscale optoelectronic device packages
US7793236B2 (en) 2007-06-13 2010-09-07 Shocking Technologies, Inc. System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices
DE102007061479A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Überspannungsschutz
US8206614B2 (en) 2008-01-18 2012-06-26 Shocking Technologies, Inc. Voltage switchable dielectric material having bonded particle constituents
EP2238384B1 (en) 2008-01-30 2016-01-20 Koninklijke Philips N.V. Semiconductor package with incorporated light or temperature sensors and time multiplexing
US7829358B2 (en) 2008-02-08 2010-11-09 Illumitex, Inc. System and method for emitter layer shaping
US8203421B2 (en) 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
DE102008022942A1 (de) 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
KR101428085B1 (ko) * 2008-07-24 2014-08-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102008034560B4 (de) 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
US20110121329A1 (en) * 2008-08-06 2011-05-26 Helio Optoelectronics Corporation AC LED Structure
US9208931B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductor-on-conductor core shelled particles
CN102246246A (zh) 2008-09-30 2011-11-16 肖克科技有限公司 含有导电芯壳粒子的电压可切换电介质材料
US8075165B2 (en) 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US8362871B2 (en) 2008-11-05 2013-01-29 Shocking Technologies, Inc. Geometric and electric field considerations for including transient protective material in substrate devices
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
DE102009006177A1 (de) 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
US9226391B2 (en) 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8399773B2 (en) 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
CN101800219B (zh) * 2009-02-09 2019-09-17 晶元光电股份有限公司 发光元件
US8537512B2 (en) * 2009-02-26 2013-09-17 Freescale Semiconductor, Inc. ESD protection using isolated diodes
KR101679099B1 (ko) 2009-03-26 2016-11-23 쇼킹 테크놀로지스 인코포레이티드 전압 스위칭형 유전 물질을 갖는 소자
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
US8384097B2 (en) 2009-04-08 2013-02-26 Ledengin, Inc. Package for multiple light emitting diodes
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
JP5728171B2 (ja) 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9053844B2 (en) 2009-09-09 2015-06-09 Littelfuse, Inc. Geometric configuration or alignment of protective material in a gap structure for electrical devices
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
DE102010024079A1 (de) * 2010-06-17 2011-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102010032813A1 (de) * 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP5547667B2 (ja) * 2011-02-01 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
US9000453B2 (en) 2011-06-28 2015-04-07 Osram Sylvania Inc. Electrostatic discharge protection for electrical components, devices including such protection and methods for making the same
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) * 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8441104B1 (en) 2011-11-16 2013-05-14 Analog Devices, Inc. Electrical overstress protection using through-silicon-via (TSV)
CN102522400B (zh) * 2011-11-30 2014-11-26 晶科电子（广州）有限公司 一种防静电损伤的垂直发光器件及其制造方法
DE102011056706B4 (de) * 2011-12-20 2016-12-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Anordnung und optoelektronisches Halbleiterbauteil
US11032884B2 (en) 2012-03-02 2021-06-08 Ledengin, Inc. Method for making tunable multi-led emitter module
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
CN104380185B (zh) 2012-05-18 2017-07-28 瑞尔D斯帕克有限责任公司 定向背光源
CN104321686B (zh) 2012-05-18 2017-04-12 瑞尔D斯帕克有限责任公司 控制定向背光源的光源
US9678267B2 (en) 2012-05-18 2017-06-13 Reald Spark, Llc Wide angle imaging directional backlights
US9235057B2 (en) 2012-05-18 2016-01-12 Reald Inc. Polarization recovery in a directional display device
US9188731B2 (en) 2012-05-18 2015-11-17 Reald Inc. Directional backlight
CN105074941B (zh) * 2012-12-06 2019-10-08 首尔伟傲世有限公司 发光二极管、照明模块、照明设备和背光单元
DE112013006122T5 (de) * 2012-12-21 2015-09-10 Osram Sylvania Inc. Schutz vor elektrostatischen Entladungen für elektrische Komponenten, Vorrichtungen, die einen solchen Schutz aufweisen, und Verfahren zu ihrer Herstellung
DE102013202904A1 (de) * 2013-02-22 2014-08-28 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung
TWI622811B (zh) 2013-02-22 2018-05-01 瑞爾Ｄ斯帕克有限責任公司 具方向的背光源
CN103137646A (zh) 2013-03-15 2013-06-05 中国科学院微电子研究所 用于双极型阻变存储器交叉阵列集成方式的选通器件单元
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
DE102013105631A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
EP3011734A4 (en) 2013-06-17 2017-02-22 RealD Inc. Controlling light sources of a directional backlight
WO2015057625A1 (en) 2013-10-14 2015-04-23 Reald Inc. Control of directional display
WO2015057588A1 (en) 2013-10-14 2015-04-23 Reald Inc. Light input for directional backlight
EP3069074A4 (en) * 2013-11-15 2017-08-02 RealD Spark, LLC Directional backlights with light emitting element packages
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
WO2015200814A1 (en) 2014-06-26 2015-12-30 Reald Inc. Directional privacy display
WO2016057690A1 (en) 2014-10-08 2016-04-14 Reald Inc. Directional backlight
DE102014116512A1 (de) 2014-11-12 2016-05-12 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Vorrichtung mit einem optoelektronischen Halbleiterbauelement
EP3224874B1 (en) 2014-11-26 2019-04-24 LedEngin, Inc. Compact emitter for warm dimming and color tunable lamp
US10356383B2 (en) 2014-12-24 2019-07-16 Reald Spark, Llc Adjustment of perceived roundness in stereoscopic image of a head
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
EP3283906B1 (en) 2015-04-13 2020-09-23 RealD Spark, LLC Wide angle imaging directional backlights
CN107850804B (zh) 2015-05-27 2021-06-11 瑞尔D斯帕克有限责任公司 广角成像定向背光源
DE102015111558B4 (de) * 2015-07-16 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102015114010A1 (de) * 2015-08-24 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements
CN108369977B (zh) 2015-10-01 2021-06-15 克利公司 低光学损失倒装芯片固态照明设备
KR102445531B1 (ko) 2015-10-21 2022-09-21 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
EP3369034B1 (en) 2015-10-26 2023-07-05 RealD Spark, LLC Intelligent privacy system, apparatus, and method thereof
WO2017083526A1 (en) 2015-11-10 2017-05-18 Reald Inc. Distortion matching polarization conversion systems and methods thereof
WO2017083041A1 (en) 2015-11-13 2017-05-18 Reald Inc. Wide angle imaging directional backlights
EP3374822B1 (en) 2015-11-13 2023-12-27 RealD Spark, LLC Surface features for imaging directional backlights
US10529894B2 (en) * 2015-11-20 2020-01-07 Lumileds Holding B.V. Contact etching and metallization for improved LED device performance and reliability
ES2912310T3 (es) 2016-01-05 2022-05-25 Reald Spark Llc Corrección de la mirada en imágenes multivista
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
CN108110024A (zh) * 2018-01-16 2018-06-01 福建兆元光电有限公司 一种半导体发光元件
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11094848B2 (en) * 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
CN111415931A (zh) * 2020-04-01 2020-07-14 扬州乾照光电有限公司 一种led芯片结构及其制作方法
US11508715B2 (en) 2020-04-24 2022-11-22 Creeled, Inc. Light-emitting diode chip with electrical overstress protection
EP4214441A1 (en) 2020-09-16 2023-07-26 RealD Spark, LLC Vehicle external illumination device
WO2024030274A1 (en) 2022-08-02 2024-02-08 Reald Spark, Llc Pupil tracking near-eye display

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US122139A (en) * 1871-12-26 Improvement in wrenches
FR2319268A1 (fr) * 1973-07-03 1977-02-18 Radiotechnique Compelec Diode electroluminescente protegee
JP3787202B2 (ja) * 1997-01-10 2006-06-21 ローム株式会社 半導体発光素子
US6054716A (en) 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
WO1998034285A1 (fr) 1997-01-31 1998-08-06 Matsushita Electronics Corporation Element electroluminescent, dispositif electroluminescent a semiconducteur, et leur procede de production
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
SE514235C2 (sv) * 1999-05-27 2001-01-29 Eltex Sweden Ab Bromsanordning för tråd i varpmaskin
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
TW492202B (en) 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
TW545698U (en) 2001-12-28 2003-08-01 United Epitaxy Co Ltd LED packaging structure with a static charge protecting device
JP2004088083A (ja) * 2002-06-25 2004-03-18 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及びその実装方法
KR100497121B1 (ko) * 2002-07-18 2005-06-28 삼성전기주식회사 반도체 led 소자
US6958498B2 (en) * 2002-09-27 2005-10-25 Emcore Corporation Optimized contact design for flip-chip LED

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9893024B2 (en) 2010-08-30 2018-02-13 Epistar Corporation Light emitting device
US10546824B2 (en) 2010-08-30 2020-01-28 Epistar Corporation Light-emitting device

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