TW200609336A - Polishing composition and substrate polishing method - Google Patents

Polishing composition and substrate polishing method

Info

Publication number
TW200609336A
TW200609336A TW094115208A TW94115208A TW200609336A TW 200609336 A TW200609336 A TW 200609336A TW 094115208 A TW094115208 A TW 094115208A TW 94115208 A TW94115208 A TW 94115208A TW 200609336 A TW200609336 A TW 200609336A
Authority
TW
Taiwan
Prior art keywords
polishing
substrate
polishing composition
composition
abrasive grains
Prior art date
Application number
TW094115208A
Other languages
English (en)
Chinese (zh)
Other versions
TWI374929B (https=
Inventor
Naoki Matsumoto
Hiroki Katoh
Hiroyuki Nakano
Katsuyuki Shirai
Masashi Teramoto
Kikurou Takemoto
Yoshiki Miura
Original Assignee
Nitta Haas Inc
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc, Sumitomo Electric Industries filed Critical Nitta Haas Inc
Publication of TW200609336A publication Critical patent/TW200609336A/zh
Application granted granted Critical
Publication of TWI374929B publication Critical patent/TWI374929B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW094115208A 2004-05-11 2005-05-11 Polishing composition and substrate polishing method TW200609336A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004141250 2004-05-11

Publications (2)

Publication Number Publication Date
TW200609336A true TW200609336A (en) 2006-03-16
TWI374929B TWI374929B (https=) 2012-10-21

Family

ID=35320468

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115208A TW200609336A (en) 2004-05-11 2005-05-11 Polishing composition and substrate polishing method

Country Status (3)

Country Link
JP (1) JP5116305B2 (https=)
TW (1) TW200609336A (https=)
WO (1) WO2005109481A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066355A (ja) * 2006-09-05 2008-03-21 Sumitomo Electric Ind Ltd ３族窒化物基板の製造方法、３族窒化物基板、エピタキシャル層付き３族窒化物基板、３族窒化物デバイス、エピタキシャル層付き３族窒化物基板の製造方法、および３族窒化物デバイスの製造方法。
JP5317531B2 (ja) * 2007-07-10 2013-10-16 パナソニック株式会社 スラリー供給装置の洗浄方法およびスラリー供給装置
MY158571A (en) * 2009-03-13 2016-10-14 Saint Gobain Ceramics Chemical mechanical planarization using nanodiamond
JP5589339B2 (ja) * 2009-10-13 2014-09-17 住友電気工業株式会社 基板の研磨方法
JP6078864B2 (ja) * 2011-11-01 2017-02-15 株式会社クリスタル光学 研磨材
JP5900079B2 (ja) * 2012-03-23 2016-04-06 三菱化学株式会社 ポリシングスラリー、及びその製造方法、並びに第１３族窒化物基板の製造方法
JP6185274B2 (ja) * 2013-04-19 2017-08-23 株式会社フジミインコーポレーテッド 磁気ディスク基板用研磨組成物キット
JP6076527B2 (ja) * 2015-03-11 2017-02-08 株式会社Adeka 硬質表面用除菌洗浄剤組成物及び硬質表面用除菌洗浄剤組成物セット
JP6959857B2 (ja) * 2017-12-28 2021-11-05 花王株式会社 研磨液組成物
KR20240029288A (ko) * 2022-08-26 2024-03-05 에스케이엔펄스 주식회사 연마시트의 제조방법 및 이를 이용한 연마패드의 제조방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11263968A (ja) * 1998-03-19 1999-09-28 Nec Kansai Ltd 研磨用スラリ及び研磨方法
WO2000041889A1 (en) * 1999-01-12 2000-07-20 Imperial Chemical Industries Plc Receiver medium for ink jet printing
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP2003347244A (ja) * 2002-05-29 2003-12-05 Mitsubishi Electric Corp 半導体ウエハの研磨方法
FR2843061B1 (fr) * 2002-08-02 2004-09-24 Soitec Silicon On Insulator Procede de polissage de tranche de materiau
JP4322035B2 (ja) * 2003-04-03 2009-08-26 ニッタ・ハース株式会社 半導体基板用研磨組成物及びこれを用いた半導体基板研磨方法

Also Published As

Publication number Publication date
WO2005109481A1 (ja) 2005-11-17
TWI374929B (https=) 2012-10-21
JPWO2005109481A1 (ja) 2008-03-21
JP5116305B2 (ja) 2013-01-09

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Legal Events

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MK4A Expiration of patent term of an invention patent