TW200609317A - Composition for chemical-mechanical polishing (cmp) - Google Patents

Composition for chemical-mechanical polishing (cmp)

Info

Publication number
TW200609317A
TW200609317A TW094112719A TW94112719A TW200609317A TW 200609317 A TW200609317 A TW 200609317A TW 094112719 A TW094112719 A TW 094112719A TW 94112719 A TW94112719 A TW 94112719A TW 200609317 A TW200609317 A TW 200609317A
Authority
TW
Taiwan
Prior art keywords
composition
cmp
chemical
mechanical polishing
titanium oxide
Prior art date
Application number
TW094112719A
Other languages
English (en)
Inventor
Gerhard Auer
Frank Hipler
Gerfried Zwicker
Original Assignee
Kerr Mcgee Pigments Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kerr Mcgee Pigments Gmbh filed Critical Kerr Mcgee Pigments Gmbh
Publication of TW200609317A publication Critical patent/TW200609317A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/36—Compounds of titanium
    • C09C1/3607—Titanium dioxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/02—Light metals
    • C23F3/03—Light metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW094112719A 2004-04-22 2005-04-21 Composition for chemical-mechanical polishing (cmp) TW200609317A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004020213A DE102004020213A1 (de) 2004-04-22 2004-04-22 Zusammensetzung für das Chemisch-Mechanische Polieren (CMP)

Publications (1)

Publication Number Publication Date
TW200609317A true TW200609317A (en) 2006-03-16

Family

ID=34963784

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112719A TW200609317A (en) 2004-04-22 2005-04-21 Composition for chemical-mechanical polishing (cmp)

Country Status (6)

Country Link
US (1) US20080020578A1 (zh)
EP (1) EP1737793A1 (zh)
JP (1) JP2007534167A (zh)
DE (1) DE102004020213A1 (zh)
TW (1) TW200609317A (zh)
WO (1) WO2005102932A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4752072B2 (ja) * 2005-11-30 2011-08-17 国立大学法人埼玉大学 研磨方法及び研磨装置
JP2008307659A (ja) * 2007-06-15 2008-12-25 Ritsumeikan 金属の研磨方法
EP2208767A3 (de) 2009-01-12 2010-08-18 crenox GmbH Verfahren zum Polieren mit Hilfe titanhaltiger Poliermittel
US8406460B2 (en) * 2010-04-27 2013-03-26 Intellectual Ventures Fund 83 Llc Automated template layout method
JP6119123B2 (ja) * 2012-06-15 2017-04-26 トヨタ自動車株式会社 活物質材料、電池、および活物質材料の製造方法
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9123387B1 (en) 2014-08-21 2015-09-01 WD Media, LLC Magnetic recording drives with active photocatalytic filtration
CN109728158B (zh) * 2017-10-27 2023-07-07 华邦电子股份有限公司 电阻式存储器及其制造方法与化学机械研磨制程
WO2023149925A1 (en) * 2022-02-07 2023-08-10 Araca, Inc. Chemical mechanical planarization slurry processing techniques and systems and methods for polishing substrate using the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485608A (en) * 1968-01-02 1969-12-23 Texas Instruments Inc Slurry for polishing silicon slices
JPS54155195A (en) * 1978-05-29 1979-12-06 Dowa Mining Co Method of removing titanium from iron sulfate solution containing titanium
DE3524053A1 (de) * 1985-07-05 1987-01-08 Bayer Antwerpen Nv Verfahren zur herstellung von hochwertigem titandioxid nach dem sulfatverfahren
US5061460A (en) * 1988-08-19 1991-10-29 Solex Research Corporation Of Japan Method for manufacturing titanium oxide
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
ES2049127B1 (es) * 1991-06-13 1994-10-01 Tioxide Espa A S A Corrector de carencias de microelementos para suelos agricolas y procedimiento para su preparacion.
US5527469A (en) * 1995-06-12 1996-06-18 Lawhorne; Earl R. Method for the preparation of desulfurized titanium oxide hydrolysate of high purity
AU2581797A (en) * 1996-03-26 1997-10-17 Cabot Corporation Method for solubilizing metal values from ta-nb-ore materials containing insoluble fluorides
JP3509838B2 (ja) * 1996-12-16 2004-03-22 戸田工業株式会社 鉄を主成分とする金属磁性粒子粉末を使用している磁気記録媒体の非磁性下地層用酸化チタン粒子粉末、該酸化チタン粒子粉末を用いた非磁性下地層を有する磁気記録媒体の基体並びに該基体を用いた磁気記録媒体
JP3514096B2 (ja) * 1998-01-21 2004-03-31 三菱マテリアル株式会社 気相合成ダイヤモンド薄膜の表面研磨方法
DE19806471A1 (de) * 1998-02-17 1999-08-19 Kerr Mcgee Pigments Gmbh & Co Reines Titandioxidhydrat und Verfahren zu dessen Herstellung
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
WO2001042140A1 (en) * 1999-12-13 2001-06-14 Jonathan Sherman Nanoparticulate titanium dioxide coatings, and processes for the production and use thereof
JP2001308041A (ja) * 2000-04-18 2001-11-02 Asahi Kasei Corp 半導体基板上の金属膜研磨用組成物
JP2002028404A (ja) * 2000-07-17 2002-01-29 Nobuo Iwane チタン系凝集剤
EP1197472B1 (de) * 2000-09-26 2011-01-19 Evonik Degussa GmbH Eisenoxid- und Siliciumdioxid-Titandioxid-Mischung
DE10352816A1 (de) * 2003-11-12 2005-06-09 Sachtleben Chemie Gmbh Verfahren zur Herstellung eines hochtemperaturstabilen, TiO2-haltigen Katalysators oder Katalysatorträgers

Also Published As

Publication number Publication date
WO2005102932A1 (de) 2005-11-03
JP2007534167A (ja) 2007-11-22
DE102004020213A1 (de) 2005-11-24
EP1737793A1 (de) 2007-01-03
US20080020578A1 (en) 2008-01-24

Similar Documents

Publication Publication Date Title
TW200609317A (en) Composition for chemical-mechanical polishing (cmp)
WO2006074248A3 (en) Engineered non-polymeric organic particles for chemical mechanical planarization
JP6209030B2 (ja) シリカ被覆無機酸化物粒子およびその製造方法、並びに樹脂組成物
JP5773170B2 (ja) 炭化珪素基板研磨用組成物及び炭化珪素基板の研磨方法
WO2006081149A3 (en) Novel polishing slurries and abrasive-free solutions having a multifunctional activator
JPWO2009151120A1 (ja) アルミニウム酸化物粒子及びそれを含有する研磨用組成物
WO2005098920A3 (de) Wässrige lösung zur entfernung von post-etch residue
TWI508796B (zh) 研磨用組合物及使用該組合物之研磨方法
TW200716729A (en) CMP slurry, preparation method thereof and method of polishing substrate using the same
WO2004089827A3 (en) Nanoporous ultrafine alpha-alumina powders and sol-gel process of preparing the same
EP1020488A3 (en) Composite particles and production process thereof, aqueous dispersion composition for chemical polishing, and process for manufacture of semiconductor device
WO2010120784A8 (en) Chemical mechanical polishing of silicon carbide comprising surfaces
JP2005528495A5 (zh)
TW200624542A (en) Ceria-based polish processes, and ceria-based slurries
JP2011513991A (ja) 水溶性酸化剤を用いた炭化ケイ素の研磨方法
JP2010503232A5 (zh)
JP2009010402A5 (zh)
PL1917214T3 (pl) Kompozycja do polerowania szkła na bazie tlenku ceru i sposób jej wytwarzania
TW201334921A (zh) 磨料物品及其形成方法
WO2011005456A3 (en) Cmp compositions and methods for suppressing polysilicon removal rates
TW200717635A (en) Polishing method for semiconductor wafer
TW200802580A (en) Polishing slurry for chemical mechanical polishing (CMP) and polishing method
WO2009109442A3 (en) Silica and also epoxy resins
TW200720016A (en) Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
MXPA05006455A (es) Particulas de percarbonato de sodio con estabilidad de almacenamiento mejorada.