TW200603253A - A semiconductor manufacturing method and an exposure mask - Google Patents

A semiconductor manufacturing method and an exposure mask

Info

Publication number
TW200603253A
TW200603253A TW093135411A TW93135411A TW200603253A TW 200603253 A TW200603253 A TW 200603253A TW 093135411 A TW093135411 A TW 093135411A TW 93135411 A TW93135411 A TW 93135411A TW 200603253 A TW200603253 A TW 200603253A
Authority
TW
Taiwan
Prior art keywords
pattern
semiconductor manufacturing
exposure mask
mask
transparency characteristic
Prior art date
Application number
TW093135411A
Other languages
English (en)
Other versions
TWI249776B (en
Inventor
Fumitoshi Sugimoto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200603253A publication Critical patent/TW200603253A/zh
Application granted granted Critical
Publication of TWI249776B publication Critical patent/TWI249776B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093135411A 2004-07-02 2004-11-18 A semiconductor manufacturing method and an exposure mask TWI249776B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004196963A JP2006019577A (ja) 2004-07-02 2004-07-02 露光用マスクおよび半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200603253A true TW200603253A (en) 2006-01-16
TWI249776B TWI249776B (en) 2006-02-21

Family

ID=35514351

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093135411A TWI249776B (en) 2004-07-02 2004-11-18 A semiconductor manufacturing method and an exposure mask

Country Status (4)

Country Link
US (1) US20060003235A1 (zh)
JP (1) JP2006019577A (zh)
CN (1) CN100399508C (zh)
TW (1) TWI249776B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100596801B1 (ko) * 2005-05-18 2006-07-04 주식회사 하이닉스반도체 반도체 소자 제조용 포토마스크
DE602005017806D1 (de) * 2005-12-23 2009-12-31 Imec Methode für ein selektives epitaktisches Wachstum von Source/Drain Gebieten
KR100770264B1 (ko) 2006-01-16 2007-10-25 삼성에스디아이 주식회사 레이저 조사 장치 및 이를 이용한 유기전계발광소자의제조방법
KR100772900B1 (ko) * 2006-09-04 2007-11-05 삼성전자주식회사 광 마스크와 반도체 집적 회로 장치 및 그 제조 방법
US7785483B2 (en) * 2006-12-22 2010-08-31 Hynix Semiconductor Inc. Exposure mask and method for fabricating semiconductor device using the same
CN101881924B (zh) * 2009-05-06 2012-05-09 中芯国际集成电路制造(上海)有限公司 掩膜版设计方法
US8822104B2 (en) 2011-12-16 2014-09-02 Nanya Technology Corporation Photomask
CN109116675A (zh) * 2018-08-15 2019-01-01 上海华力集成电路制造有限公司 提高热点工艺窗口的opc修正方法
US11372324B2 (en) * 2019-02-11 2022-06-28 United Microelectronics Corporation Method for correcting mask pattern and mask pattern thereof
CN116504716B (zh) * 2023-06-21 2024-01-26 粤芯半导体技术股份有限公司 半导体顶层金属的opc修补方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357311A (en) * 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
JPH10198048A (ja) * 1997-01-13 1998-07-31 Oki Electric Ind Co Ltd パターン形成方法
JP3085259B2 (ja) * 1997-09-17 2000-09-04 日本電気株式会社 露光パターン及びその発生方法
US6569574B2 (en) * 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US6541165B1 (en) * 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
CN1206701C (zh) * 2001-03-29 2005-06-15 华邦电子股份有限公司 光掩模组结构与微影制程
CN1400630A (zh) * 2001-07-26 2003-03-05 旺宏电子股份有限公司 无铬相移掩膜及使用该掩膜的设备
JP3559553B2 (ja) * 2002-06-28 2004-09-02 沖電気工業株式会社 半導体記憶素子の製造方法
US20050008942A1 (en) * 2003-07-08 2005-01-13 Yung-Feng Cheng [photomask with internal assistant pattern forenhancing resolution of multi-dimension pattern]
US7261981B2 (en) * 2004-01-12 2007-08-28 International Business Machines Corporation System and method of smoothing mask shapes for improved placement of sub-resolution assist features

Also Published As

Publication number Publication date
US20060003235A1 (en) 2006-01-05
CN100399508C (zh) 2008-07-02
TWI249776B (en) 2006-02-21
CN1716535A (zh) 2006-01-04
JP2006019577A (ja) 2006-01-19

Similar Documents

Publication Publication Date Title
TWI266373B (en) Pattern forming method and method of manufacturing semiconductor device
JP2002122976A5 (zh)
TW200518172A (en) Photomask, and method for forming pattern
TW200619833A (en) Pattern forming method, semiconductor device manufacturing method and exposure mask set
TW200721260A (en) Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
TW200745740A (en) Mask pattern generating method
TW200520038A (en) Pattern-forming method and method for manufacturing a semiconductor device
TW200520053A (en) Immersion lithographic process using a conforming immersion medium
TWI266967B (en) Resist under-layer lower layer film material and method for forming a pattern
TW200603260A (en) Preparation of photomask blank and photomask
WO2009078380A1 (ja) ネガ型感光性樹脂積層体を用いたレジスト硬化物の製造方法、ネガ型感光性樹脂積層体、及びネガ型感光性樹脂積層体の使用方法
MY190719A (en) Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element
TW200702906A (en) Photomask structures providing improved photolithographic process windows and methods of manufacturing same
SG130083A1 (en) A system and method for photolithography in semiconductor manufacturing
TW200630636A (en) Novel method to form a microlens
WO2008083197A3 (en) Imaging post structures using x and y dipole optics and a single mask
TW200603253A (en) A semiconductor manufacturing method and an exposure mask
TW200506514A (en) Method for manufacturing gray tone mask, and gray tone mask
TW200733232A (en) Method for forming fine pattern of semiconductor device
TW200625012A (en) Method for forming photoresist pattern by use of double-layer anti-reflection film
JP2007165679A (ja) パターン形成体の製造方法
JP2001092105A5 (zh)
TW200724709A (en) A method for forming a mask pattern for ion-implantation
TW200506549A (en) Method for making mold of light guide plate
TW200743138A (en) Method of forming a fine pattern

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees