TW200535893A - Field emission display device structure with reflection layer and gate electrode - Google Patents

Field emission display device structure with reflection layer and gate electrode Download PDF

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Publication number
TW200535893A
TW200535893A TW93111518A TW93111518A TW200535893A TW 200535893 A TW200535893 A TW 200535893A TW 93111518 A TW93111518 A TW 93111518A TW 93111518 A TW93111518 A TW 93111518A TW 200535893 A TW200535893 A TW 200535893A
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Taiwan
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reflective layer
cathode
layer
anode
gate electrode
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TW93111518A
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Chinese (zh)
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TWI267099B (en
Inventor
de-feng Zhan
kui-wen Zheng
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Teco Nanotech Co Ltd
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Abstract

This invention relates to a field emission display (FED) device structure with a reflection layer and a gate electrode, which has a gate electrode supporting device with a reflection layer applied FED, is an improved application of the conventional FED with a gate electrode, and is characterized in improving the conventional FED. A gate electrode is provided on the cathode side of the insulation supporting device with a reflection layer applied to FED, in which the gate electrode layer is made from the metal mask. Therefore, in addition to serving support and reflection features of the supporting device applied to FED, the gate electrode function is equipped together with advantages of improving yield of assembly process and reducing assembly equipment cost. The FED structure comprises a cathode structure containing an electron emitting source layer and a cathode substrate; and an anode structure containing a fluorescent powder layer and an anode substrate.

Description

200535893 五、發明說明(1) D 碳 【發明所屬之技術領域 本發明係有關於—種 isplay; FED)具閘極構造之=不為(Fleld Emission 奈米管為電子發射源層之p =作技術,尤指一種可應用於 先前技術】 努备顯示器製作技術。 、 平面顯示器(FPD)種類包 示器(TFT-LCD)、電漿顯示器=發射顯示器(FED)、液晶顯 (0LED)、液晶投影式顯示器 ~ 、-有機發光二極體顯示器 的共同特點,依照各該平面顯=哭輕、薄是該等平面顯示器 於小尺寸面版如手機;有些則之不同特質,有些可應用 螢幕、電視螢幕;或應用&超用於中、大型尺寸如電腦 各種平面顯示器技術之發展,j尺寸如室外數位式看板。 畫面、並提高使用壽命等特性j疋希望朝向兼具高晝質、大 其中所謂的場發射顯示哭县 ,其原因在其有自發光的:來,興的平面顯示器之 表現外,加上更寬廣的視角;、=LCD能有更佳的亮度 作溫度較廣等特性,且所得 ί ί,低,反應速度快,操 ^(CRT),^ ^ ^ ^ ^ ^ 腺% & ^ ^徑射線官(CRT)輕、薄,再加上 ί =發的奈米?管應用於内勢必促進其發: 至少勺人二f之=Τ %發射顯示器參考第一圖所示,其結構 ^ ^ ^亟構造〇 a與陰極構造2 0 a於一單元結構之中, J = 有絕緣支撐褒置(或_θγ)ι5&,提供 l' . ^ 與早兀陰極間真空區域之間隔,及作為陽極構造 心與陰極構造20a之間之支撐,為防止顯示器中的兩大片面200535893 V. Description of the invention (1) D carbon [Technical field to which the invention belongs] The present invention relates to a kind of isplay; FED) with gate structure = not (Fleld Emission nano tube is an electron emission source layer p = work Technology, especially one that can be applied to the previous technology] Prepared display manufacturing technology. Flat panel display (FPD) type display (TFT-LCD), plasma display = emission display (FED), liquid crystal display (0LED), liquid crystal The common characteristics of the projection display ~,-organic light emitting diode display, according to the flat display = cry light, thin are these flat displays in small size panels such as mobile phones; some have different characteristics, some can be applied to the screen, TV screen; or the application & super-use for the development of medium and large size such as the computer's various flat panel display technology, j size such as outdoor digital signage. Picture, and increase the service life and other characteristics The so-called field emission display crying county is due to its self-illumination: Come, Xing's flat-panel display performance, plus a wider viewing angle; = LCD can have better brightness Wide temperature and other characteristics, and the resulting ί, low, fast response, operating ^ (CRT), ^ ^ ^ ^ ^ ^ gland% & ^ ^ Radial Ray Officer (CRT) light, thin, plus ί = Nanometer tube? The application of the tube is bound to promote its development: At least spoons of two f = Τ% emission display Refer to the first figure, its structure ^ ^ ^ urgent structure 0a and cathode structure 2 0 a in one In the unit structure, J = set with insulation support (or _θγ) ι5 & provide the space between l '. ^ And the vacuum region between the early cathode and the support between the anode structure core and the cathode structure 20a. Prevents two big sides in the display

200535893 五、發明說明(2) -- 板崩潰,參閱第一圖所示,一陽極構造1 〇3至少包含一陽極 玻璃基板11a,一陽極導電層l2a,一螢光粉體層(ph〇sph〇N layer)13a’而一陰極構造2〇a至少包含一陰極玻璃基板 21a,一陰極導電層22a,一電子發射源層23a,一介電層 2 4 a ’ 一閘極層2 5 a ;其中各該單元内陽極構造1 〇換陰極構 造20a之間隔係由絕緣支撐裝置i 5a配置,其功能為;持陰 極構造與陽極構造之間之真空區域之維繫,並由陽極導電^ 1 2a提供之高壓,俾使陰極構造2〇a上之電子發射源層“a產曰 生電子並射向陽極構造10a上之螢光粉體層13a激發;使 粉體發光。此外,前述所謂之陰極構造2〇a之陰極導電声2以 係由平行並列之陰極導線配置而成’閘極 ^ 列之閘極導線配置以,兩者導線之配置互成//關=丁,亚在 功此上係於閘極層與陰極電極層間提供一電壓以形成電場, 由閘極汲引電子發射源之電子束 導線之垂直配置關係、,以達成束各單並Λ間Λ線與陰極電極 係,以達成動態晝面呈現之目的早又子了發射源之控制關 顯示器中移動,藉由真空設備將顯電子在場發射 使電子獲得一良好抽真空至㈣ 同時應避免電子發射源和榮光徑、 電子有足夠能量去衝擊榮光粉二毒化。另’為使 也提供陽炼f K麻一十r 故在兩板間需有適當間隙, iD:杈仏1%極電極層一高電壓,俾始於古 足夠的加速度能量來衝擊螢光粉,、1 /及引出之笔子束有 生發光效應。 達到使螢光粉能充分產 習知技藝對於該等結構之製作,一種以薄膜微影製程200535893 V. Description of the invention (2)-The plate collapses. As shown in the first figure, an anode structure 103 includes at least an anode glass substrate 11a, an anode conductive layer 12a, and a phosphor powder layer (ph0sph). 〇N layer) 13a 'and a cathode structure 20a includes at least a cathode glass substrate 21a, a cathode conductive layer 22a, an electron emission source layer 23a, a dielectric layer 2 4a', and a gate layer 2 5a; The interval between the anode structure 10 and the cathode structure 20a in each unit is configured by the insulating support device i 5a. Its function is to maintain the vacuum area between the cathode structure and the anode structure and is provided by the anode conduction ^ 1 2a. The high voltage causes the electron emission source layer "a" on the cathode structure 20a to generate electrons and emit it to the fluorescent powder layer 13a on the anode structure 10a to excite the powder. In addition, the so-called cathode structure described above 2〇a's cathode conductive sound 2 is configured by parallel side-by-side cathode conductors. The gate conductors are arranged in parallel. The arrangement of the two conductors is mutually mutual. Providing a voltage between the gate layer and the cathode electrode layer to form an electric field, The vertical arrangement relationship of the electron beam wire that draws the electron emission source by the gate electrode, so as to achieve the single beam and the Λ line Λ line and the cathode electrode system, in order to achieve the purpose of dynamic day-time presentation, the control of the emission source was turned off. In the mobile, the vacuum device will emit electrons in the field so that the electrons get a good vacuum. At the same time, the electron emission source and the glory path should be avoided. The electrons have enough energy to impact the glare powder. Poisoning is also provided. Refining f K hemp ten r, so there needs to be a proper gap between the two plates, iD: 1% of the electrode layer, a high voltage, beginning with sufficient acceleration energy to impact the phosphor, 1 / and the lead The pen beam has a luminous effect. To achieve the full production of fluorescent powder. Known techniques. For the production of these structures, a thin film lithography process is used.

200535893 五、發明說明(3) ,可精細製作微米規格之結構,然由於該製作均以繁複之製 程程序難以達成量產化之目標,近年來一種閘極網罩4 6 ’結 構之設置,如第二圖所示之結構’其應用於場發射顯示器 者,如第三圖所示之結構,由於該閘極係以一種金屬網罩 4 6,取代習知之以微影製程製作於陰極板上’該等閘極網罩 · 可視為一種獨立元件設置為陰極板2 ’與陽極板1,之間,陰極' 以介電層(Dielectric layer)(具阻隔之肋-rib作用)24, 作為與電極層之間之間隙與支撐’陽極則以支撐裝置 (S p a c e r ) 3 ’為間隔支樓,以上該等支樓係以提供於真空環境 下,防止陰陽面板之崩塌,並以型成一真空區域以作為陰極 電子發射源產生電子束移動之路徑以撞擊陽極粉體層發光,鲁 然該等支撐裝置,係以一固定間隔配置,且閘極網罩4 6,, 通常係由厚度可為5 0// m至2 0 0# m之覆數閘極導線4 6丨,薄片 所構成,因此於電路配置下操作,由於電路多以一種脈衝并員 率震盪,往往易使此閘極網罩產生共振效應,此時於場發射 顯示器常有共鳴之聲響發出,並影響畫面之表現,與產^之 品味 ° 近年來,一種新型的絕緣材質的面板形支撐裝置過去常 被導入液晶平面顯示器面板内層間隔之使用,參閱第十一吊 圖所示之結構,該材質膨脹係數與破璃相近,面板厚度可為 5 0 0// m至1 5 0 0/z m,並可被钱刻為覆數之孔隙42,孔隙^捏、 已可滿足目前場發射顯示益之陰陽極單元矩陣配列之需東, 因此亦可被考量為場發射顯示器内陰陽極間之支撐裝置應’ 用。由於習用之支撐裝置多以玻璃球或十字型玻璃^支200535893 V. Description of the invention (3), it is possible to finely fabricate micron-sized structures, but since the production is difficult to achieve the goal of mass production with complicated manufacturing procedures, in recent years, a gate grid cover 4 6 'structure is set, such as The structure shown in the second figure is applied to a field emission display. The structure shown in the third figure, because the gate is made of a metal mesh cover 46, instead of the conventional method of making the photolithography on the cathode plate. 'The gate grids can be regarded as a separate element arranged between the cathode plate 2' and the anode plate 1, with the cathode 'using a dielectric layer (with a barrier rib effect) 24 as The gap between the electrode layers and the support. The anodes are spaced by supporting devices (S pacer) 3 '. These branches are provided in a vacuum environment to prevent the collapse of the yin and yang panels and form a vacuum area. As a cathode electron emission source, the path of the electron beam is generated to strike the anode powder layer to emit light. The supporting devices of Lu Ran are arranged at a fixed interval, and the gate net cover 4 6 is usually made by a thickness of 5 0 // m to 2 0 0 # m cover gate wires 4 6 丨, composed of thin sheets, so operate in the circuit configuration, because the circuit mostly oscillates with a kind of pulse union rate, it is easy to cause this gate net cover to have a resonance effect At this time, the field emission display often resonates with the sound and affects the performance of the picture. In recent years, a new type of insulating material panel-shaped support device was often introduced into the inner space of the LCD flat panel. Use, please refer to the structure shown in the eleventh hanging picture. The expansion coefficient of this material is similar to that of broken glass. The thickness of the panel can be 50 0 // m to 15 0 0 / zm, and it can be engraved with money to cover the number of pores. 42. The pore pinch can already meet the needs of the matrix array of cathode and anode units for current field emission display, so it can also be considered as a support device between the cathode and anode of the field emission display. Because the conventional support devices are mostly glass balls or cross-shaped glass ^

200535893 五、發明說明(4) 又或以 a am長條狀的支撐物來支 該 以黏附於陰極或陽極,因二^二而Μ —固著劑 然後黏附在陽極構造 < 在1私係而!過沾附固著劑, ^或陰極構造上,再經堝一、鹿,丄, 成支樓裝置之固著,妒 、 凡〜製程以完 求,且不致影響書面;:合場發射顯示面板之晝面呈現需 介在w 2之^果Λ此支撐$置之規模大都 構在製程上便會有;二,其外觀尺寸相當微小,因此該社 習知之支樓裝置外觀3雜度的f:在:-.製程繁複:由; 植支撐裝置要求精確古,、,要猎=吸附設備或移載設備佈 高。二.支撐裝置對位及實施之複雜及困難度提 置需藉由沾漿,才能者劑易產生^ :由於習知支撐裝 漿進行固著,讓在面板上,其後必需再經加熱讓沾 支擇裝置佈植在裝置完成.固定封著,將沾有沾漿 其二為經高溫燒針,’造成沾漿對面板形成一污染源, 面板造成二次二:在沾装内的溶劑因而揮發出來,勢必對 孔隙支撐裝=二=。所以,若以前述所謂之絕緣圖騰化矩陣 本。 二易解決以上之問題,並可大大減低製程成 為此申請人治祖 特色加以改日 出一專利案設計係一種絕緣支撐裝置之 設置一反射^ 了 如第十一圖所示,於該絕緣支撐裝置38200535893 V. Description of the invention (4) Or use a am-shaped support to adhere to the cathode or anode, because of the two and two M-fixing agent and then adhere to the anode structure < and! After attaching the fixing agent, or the cathode structure, and then through the pot one, the deer, the scorpion, the anchoring device is fixed, and the process is completed, without affecting the writing; The appearance of the day surface needs to be introduced in w 2. The scale of the support $ is mostly built in the process; Second, its appearance size is quite small, so the appearance of the branch equipment known to the agency is 3 degrees of f: In:-. The process is complicated: from; The planting support device requires precise archaic ,,, and hunting = the height of the adsorption equipment or transfer equipment. 2. Supporting device alignment and implementation are complicated and difficult to raise. It is necessary to dip the slurry to make it easy to produce the agent. ^: Due to the conventional support, the slurry is fixed on the panel, and then it must be heated. The installation of the dip-selective device is completed on the device. It is fixed and sealed, and the dip-stick will be burned with high temperature needles, which will cause the dip-stick to form a source of pollution to the panel, and the panel will cause a second two: the solvent in the dip. Evaporation will inevitably be installed on the pore support = 二 =. Therefore, if the aforementioned so-called insulation totem matrix is used. Eryi solves the above problems, and can greatly reduce the process to become the ancestor of this applicant. It can be modified. The patent design is a reflection of the installation of an insulation support device. As shown in Figure 11, the insulation support device 38

顯示器上之支撑工=’除發揮該絕緣支撐裝置應用於場發射 該支撐裝置相較= 並可提升螢光粉之發光效率,又, 且耗時之佈植設備二〇之支撐器實施容易,無須藉以高成本 層之支撐裝置再、社人:、’、據此,發明人乃再利用此一具反射 口則述所謂的一閘極網罩以製作一種具反Support on the display = 'In addition to using the insulating support device for field emission, the support device is compared to = and can improve the luminous efficiency of the fluorescent powder, and the time-consuming installation of the support device 20 is easy to implement, There is no need to use a high-cost layer of supporting devices. The company :, ', according to this, the inventor uses this reflection port to describe the so-called gate grid to make a reflective

200535893 五、發明說明(5) '' ~~------ _ 射層之閘極支撐裝置,除具前述申請人之 加亮度之功效外,並結合—易 i木之支撐與增 合本發明裝置之實施,所製作場 ’配 習知技#製作陰極與陽極可更簡易。 -。汉置仍較 【發明内容】 有鑑於以習知技藝製作之閘極網罩 共振之缺憾仍待克服,發 X射,、、、員不裔仍因 ;,除具備反射層可提升閘=裝 陰極=極之支撐效果,且可改善間 振=作為 置,可於一種具反射層之絕緣丄之=土撐裝 以構成本發明之結構。 …。一種閘極網罩 本發明又一目的,係提供一種 置,可獨立製作,成本低廉良率高。日之閘極支撐裝 本發明另一目的,係對應本發明之纟 製作簡化,且夂兮处操认 右極、,,σ構與%極結構 二:f各该結構均可獨立個別製作後, 筹 為、種配5本發明實施之場發射顯示器結構。 、 為達上述所謂之諸目的,本發明孫蔣彳i£ 閘極支撐裝置,於一種具複數透種 = :反射層以對應陽極,於該具複數 極,所心門;Ϊ後數金屬閑極導線之閑極網軍以對應陰 配置垂直對;。:ί係平行並列,與陰極電極層之陰極導線 直對應,该閘極導線上係可配置複數之透孔,各該 200535893 五、發明說明(6) 孔係對應絕緣板之透孔,以汲取陰極電 並以容各該單元之陰極電子束通過以擊^=產生電子束 對應單元,或係由兩兩相鄰之間極導線c粉體層之 緣板之透孔,以汲取對應之陰極電子發射源二1早70鄰接絕 配合本發明具反射層之閘極支撐裝置之場發 m 造包含(如第十圖)··陰極構造2,具有陰極阻隔壁構 電子發射源層23,陰極電極層22及陰極基板21 ;及 1,具有陽極阻隔壁(i"ib)14,陽極電極層12,具 ^ 層1 3及陽極基板1 1 ;及本發明之具反射層44之支撑^ 其中該陰極構造具有陰極阻隔壁24,位於該陰極^板之上且 Μ及具反射層之閘極支撐t置之具閘極4 6—側相間隔,其陰 極阻隔壁2 4之厚度係以為閘極4 6與陰極電極層2 2之電場決定 要素,及控制閘極4 6汲取陰極電子發射源層2 3,並以為驅動 電路設計提供電壓之參考,取代習知結構之介電層24a,•其 T陽極構造具有本發明增設之陽極阻隔壁14,係以提供與本 發明之具反射層之閘極支撐裝置相之具反射層44一側相間 隔’以作為真空過程之氣導路徑。 〜 $ 了使貴審查委員能更進一步瞭解本發明之特徵及技 術内合’晴苓閱以下有關本發明之詳細說明與附圖,然而所 附圖式僅提供參考與說明用,並非用來對本發明加以限制 者’另’其他目的與優點,對於熟諳此技藝者而言,在參考 附圖及後文發明詳述後,亦將變得明瞭。 ^ 【實施方式] 本發明係一種具反射層及閘極及支撐裝置之構造,參考200535893 V. Description of the invention (5) '' ~~ ------ _ The gate support device of the emitter layer, in addition to the brightness enhancement effect of the aforementioned applicant, and combined with the support and addition of Yi wood With the implementation of the device of the present invention, it is easier to fabricate the cathode and anode in the production field. -. Han Chi is still more than [invention content] In view of the drawbacks of the gate grid resonance made by conventional techniques, it still needs to be overcome. Cathode = pole supporting effect, and can improve inter-oscillation = as a place, can be installed in a kind of insulation with reflective layer = soil support to form the structure of the present invention. …. Gate grid cover Another object of the present invention is to provide a device that can be manufactured independently, with low cost and high yield. The Japanese gate support device has another object of the present invention, which is to simplify the fabrication of the present invention, and to identify the right pole, the σ structure, and the% pole structure at the second place. To prepare and match 5 field emission display structures according to the present invention. In order to achieve the above-mentioned so-called objectives, the present invention is a gate supporting device of the present invention, which has a plurality of transparent types =: a reflective layer to correspond to the anode, at which the plurality of poles are located; The free-pole network of the polar wires is vertically aligned in a corresponding female configuration; : It is parallel and parallel, and directly corresponds to the cathode wire of the cathode electrode layer. The gate wire can be provided with a plurality of through holes. The cathode is charged to allow the cathode electron beam of each unit to pass through to generate the corresponding unit of the electron beam, or through the through holes of the edge plate of the powder layer of two adjacent adjacent wires c to draw the corresponding cathode Electron emission source II: Early 70's abutting the field emission of the gate supporting device with reflective layer of the present invention, including (as in the tenth figure). · Cathode structure 2, with cathode barrier wall structure electron emission source layer 23, cathode The electrode layer 22 and the cathode substrate 21; and 1, having an anode barrier wall (i " ib) 14, an anode electrode layer 12, with a layer 1 3 and an anode substrate 1 1; and a support with a reflective layer 44 of the present invention ^ Among them The cathode structure has a cathode barrier wall 24, which is located on the cathode plate and M and a gate support t with a reflective layer are provided with a gate 46-side spaced apart. The thickness of the cathode barrier wall 24 is a gate. Determining factors of electric field between electrode 46 and cathode electrode layer 22, and control gate 4 6 It draws the cathode electron emission source layer 2 3, and provides a reference for the driving circuit design, instead of the dielectric layer 24a of the conventional structure. Its T anode structure has the anode barrier wall 14 added in the present invention to provide The reflective gate layer supporting device phase of the invention with the reflective layer 44 side spaced from each other is used as the air conduction path of the vacuum process. ~ To allow your reviewers to further understand the features and technologies of the present invention. "Qing Ling" Read the following detailed description and drawings of the present invention, but the drawings are provided for reference and illustration purposes only, and are not intended as a reference to the present invention. Those who restrict the invention 'other' other purposes and advantages, for those skilled in the art, will become clear after referring to the drawings and the detailed description of the invention later. ^ [Embodiment] The present invention is a structure with a reflective layer, a gate and a supporting device.

第10頁 200535893 五、發明說明(7) ^^ 第四圖至第六圖三種每 4 2之絕緣支撐裝置只知恶樣,其結構至少包含具複數透孔 數透孔係提供為陰8 ’以作為陰極板陽極板之間隙支撐,複 徑;於該絕緣支^ =極間各對應單元内提供電子之移動路 示器之陽極一侧# 1置一側設置反射層44,對應於場發射顯 添亮度,鄰接及以反射陽極板被擊發之榮光粉體發光’以增 捭 ^ * 射層之四周設置為無效區域,該無效區域係 徒供為對位及扭壯 閘極網罩以為^之用;於絕'緣支#裝置38之另—側裝置— 構 ^ 句間極層4 6,該閘極層係由複數之閘極導線4 6 1Page 10 200535893 V. Description of the invention (7) ^^ The fourth to sixth figures show that the three kinds of insulation support devices every 4 2 only know the evil, and its structure includes at least a plurality of through holes. As the gap support of the cathode plate and anode plate, the diameter is doubled; a reflective layer 44 is provided on the anode side # 1 of the mobile road sign providing the electrons in the corresponding units between the poles, corresponding to the field emission Brightness is added, and the glory powder which is adjacent and fired by the reflective anode plate is illuminated to increase the thickness ^ * The surrounding area of the emission layer is set as an invalid area, which is provided for alignment and twisting the gate mesh cover. ^ The other side of the device-Yu Jue 'Yuan branch # 装置 38-structure ^ inter-sentence electrode layer 4 6, the gate layer is composed of a plurality of gate wires 4 6 1

,t .第種恶樣之閘極網罩係由金屬面板蝕刻而成,閘極 V線上係有複數之透孔,各該孔係對應絕緣支撐裝置之複數 $孔’閘極導線係平行配置益與對應之陰極電極導線垂直, 二,考第四圖所示之示意結構,第二種態樣之閘極網罩亦由 至蜀面板蝕刻而成,係由兩雨相鄰之閘極導線構成一導線單 元,兩兩相鄰之導線内設置〆孔隙係對應絕緣支撐裝置之透 2陣列丄並與陰極導線配置t直,請參考第五圖所示之示意 、’、σ構,第二種態樣係以金屬網線並列之結構以一支撐框架構 成’其中支撐框架内之閘極導線亦為兩兩相鄰之閘極導線構 成一導線單元,兩兩相鄰之導線内係對應絕緣支撑裝置之透 孔陣列,並與陰極導線配置粢直,請參考第六圖所示之示意 結構。 配合本發明之場發射顯斧器參考第四圖到第十圖所示其 結構至少包含陽極構造1與陰極構造2於一單元結構之中, 陽極與陰極之間設置有本發明之具反射層之閘極支撐叢置, 提供為單元陽L單元陰極間真空區域之間隔,及作為陽極 200535893 五、發明說明(8) 構造1與陰極構造2之間之支撐,一陽極構造1至少包含一陽 極(玻璃)基板1 1,一陽極導電層1 2,一螢光粉體層 (phosphors 1 ayer) 1 3 ’ 一陽極阻隔壁1 4,阻隔壁1 4係間隔 配置於螢光粉體層之間;而一陰極構造2 〇至少包含一陰極 (玻璃)基板2 1,一陰極電極層2 2,一電子發射源層2 3 ,一 陰極阻隔壁2 4,阻隔壁2 4係間隔配置於電子發射源層2 3之 間’其中所謂的陰極導線層係由複數之陰極導線平行配置並 與閘極導線垂直’該等陰極導線之上配置電子發射源材質, 以形成電子發射源層2 3 ;而支撐裝置3 8,係以具反射層4 4之 一側對應陽極,以陽極阻隔壁14間隔,該陽極阻隔壁14係對 應本發明之支撐裝置上各該孔隙42之鄰接區域内,以形成一 二間區域,作為真空過程之氣導路經,支樓裝置3 8之另一側 閘極層,係對應陰極,閘極層與陰極間以陰極阻隔壁24區隔 支撐,閘極導線46 1係與陰極導線垂直配置,以提供為各單 元電子束没取及控制之用。t. The first kind of gate grid is etched from a metal panel. There are a plurality of through holes in the gate V line, and each of these holes corresponds to a plurality of $ holes of the insulating support device. The gate wires are arranged in parallel. It is perpendicular to the corresponding cathode electrode wire. Second, consider the schematic structure shown in the fourth figure. The gate grid of the second aspect is also etched from the Shu panel, which is made of two adjacent gate wires. A wire unit is formed, and two adjacent wires are provided with pores corresponding to the transparent array of the insulating support device and arranged straight with the cathode wire. Please refer to the schematic, ', σ structure shown in the fifth figure. This kind of structure is composed of a metal wire and a support frame. The gate conductor in the support frame is also a pair of adjacent gate conductors to form a conductor unit. The two adjacent conductors are insulated correspondingly. The through-hole array of the supporting device is arranged straight with the cathode wire. Please refer to the schematic structure shown in the sixth figure. With reference to the field emission display device of the present invention, refer to the fourth to tenth figures. The structure includes at least an anode structure 1 and a cathode structure 2 in a unit structure. A reflective layer of the present invention is provided between the anode and the cathode. The gate support clusters are provided to provide the space between the vacuum regions between the cathodes of the unit anode and the unit and serve as anodes. 200535893 V. Description of the invention (8) Support between structure 1 and cathode structure 2. An anode structure 1 includes at least an anode. (Glass) substrate 1 1, an anode conductive layer 12, 2, a phosphor powder layer (phosphors 1 ayer) 1 3 ', an anode barrier wall 1, 4 and the barrier wall 14 are arranged between the phosphor powder layers at intervals. ; And a cathode structure 20 includes at least a cathode (glass) substrate 21, a cathode electrode layer 22, an electron emission source layer 2 3, a cathode barrier wall 24, and a barrier wall 24 arranged at intervals of electron emission Between the source layers 2 and 3, wherein the so-called cathode wire layers are arranged in parallel with a plurality of cathode wires and perpendicular to the gate wires, an electron emission source material is arranged on the cathode wires to form an electron emission source layer 2 3; Supporting device 3, 8 One side with the reflective layer 44 corresponds to the anode, and the anode barrier wall 14 is spaced. The anode barrier wall 14 corresponds to the adjacent area of each of the pores 42 on the support device of the present invention to form one or two areas as a vacuum. The gas conduction path of the process. The gate layer on the other side of the branch device 38 corresponds to the cathode. The gate layer and the cathode are supported by a cathode barrier wall 24. The gate conductor 46 1 is arranged perpendicular to the cathode conductor. To provide for the acquisition and control of the electron beam of each unit.

本發明具有的具反射層44之支撐裝置38,係選用一已製 作好之含覆數透孔4 2之絕緣玻璃板,以蒸鍍或濺鍍方式製作 一反射層44於絕緣玻璃板之一側,於絕緣玻璃板之另一側, 貼覆閘極網罩’未更裁前之閘極網罩如第七圖至第九圖所 示,並選用膨脹係數與絕緣支撐裝置之材質近似之金屬網罩 材抖,各該網罩包含有效貼覆區,與無效移除區域,無效移 除區域係作為連結與支撐’俾使該等閑極網罩與絕緣支撐裝 置貼覆實施容易,#效貼覆區域内係貼附於絕緣支撐裝置 3 8 ’即為覆數閘極導線4 6 1所構成,貼覆過程可以一種有機The supporting device 38 with a reflective layer 44 of the present invention is an insulating glass plate with a number of through holes 4 2 which has been prepared, and a reflective layer 44 is formed on one of the insulating glass plates by evaporation or sputtering. Side, on the other side of the insulating glass plate, paste the gate mesh cover 'the gate mesh cover before cutting is shown in Figures 7-9, and select an expansion coefficient similar to the material of the insulating support device The metal net cover material shakes, each net cover includes an effective application area, and an invalid removal area. The invalid removal area is used as a connection and support. This makes it easy to implement the lazy electrode cover and insulation support device. The covering area is affixed to the insulating support device 3 8 ′, which is composed of covering the gate wires 4 6 1. The covering process can be organic.

200535893 五、發明說明(9) 膠與玻璃膠實施貼合,貼覆後之半成品,以一種切割褒置移 除閘極網罩無效移除區域,俾使閘極導線可為一獨立控制導 線。 本發明具反射層之閘極支撐裝置之場發射顯示器構造製 做方式其包含;一、分別於陰極構造2 0之電子發射源(碳奈 米管層)3 6之一侧或陽極構造1 〇螢光粉體層丨3之一側製作一 陰極與陽極之阻隔壁(rib) 24及14,該陰極阻隔壁24及陽極 阻隔壁1 4設置位置係對應於反射層4 4及閘極層4 6各該覆數透 孔42之間,以支撐並隔離陰陽極構造,二、於本發明之邊緣 無效區域4 3 (如第十一圖所示)内之固著位置分別塗覆上有機 膠與固著劑,有機膠(如UV膠)係為假固定之用,以先固定本 發明之支撐裝置3於陰陽板之間,該有機膠將於燒結過程中 氧化移除,固著膠可以為一玻璃膠,可於高溫燒結過程固著 本發明之支撐裝置3於陰陽極構造卜2間,三、參酌本發明 絕緣支撐裝置3 8上設置之對位標示,將陰極構造2、陽極構 造1及本發明絕緣支撐裝置3精準對位,據此,陰陽極構造之 各該陰陽極單元與本發明之各該覆數透孔對位,先藉以前述 所謂之有機膠進行假固定,或一箝制工具暫以固定,四、 將,定後之半成品進行高溫燒結,俾使本發明之支撐裝置3 固著於陰、陽極構造1、2。 、 按,如第四圖至第六圖所示本發明係採用一膨脹係數與陰陽 極玻璃基板相同之具複數孔係之玻璃板作為絕緣層支撐^置 38,一種金屬網罩作為閘極層46,外型尺寸依場^ = 一 件設計,於對位參考位置製作複數之對位標示,二使封裝=200535893 V. Description of the invention (9) The glue is adhered to the glass glue, and the semi-finished product after the covering is removed by a cutting device to remove the invalid area of the gate mesh cover, so that the gate wire can be an independent control wire. The field emission display structure manufacturing method of the gate support device with a reflective layer of the present invention includes: one, one side of the electron emission source (carbon nanotube layer) 36 of the cathode structure 20 or one anode structure 1 〇 One side of the fluorescent powder layer 丨 3 is made of ribs 24 and 14 of a cathode and an anode, and the cathode barrier wall 24 and the anode barrier wall 14 are arranged at positions corresponding to the reflective layer 4 4 and the gate layer 4 6 Between each of the covering holes 42 to support and isolate the cathode and anode structure. Second, apply organic glue to the fixed positions in the edge invalid area 4 3 (as shown in Figure 11) of the present invention. And fixing agent, organic glue (such as UV glue) is used for false fixing. The supporting device 3 of the present invention is first fixed between the yin and yang plates. The organic glue will be oxidized and removed during the sintering process. It is a glass glue, which can fix the support device 3 of the present invention between the cathode and anode structures 2 during the high temperature sintering process. Third, refer to the alignment mark provided on the insulation support device 38 of the present invention, and set the cathode structure 2 and the anode structure. 1 and the insulation support device 3 of the present invention are accurately aligned, and accordingly, the Each anode and cathode unit of the pole structure is aligned with each of the covered through holes of the present invention. First, the aforementioned so-called organic glue is used for false fixing, or a clamping tool is used for temporary fixing. Fourth, the semi-finished product after the fixing is subjected to high temperature. By sintering, the supporting device 3 of the present invention is fixed to the cathode and anode structures 1 and 2. As shown in the fourth to sixth figures, the present invention uses a glass plate with a plurality of holes having the same expansion coefficient as that of the cathode and anode glass substrates as an insulating layer to support 38, and a metal mesh cover as the gate layer. 46, the external dimensions are according to the field ^ = a design, a plurality of alignment marks are made at the alignment reference position, and the second package =

第13頁 200535893 五、發明說明(10) 陰、陽極構造對位參考之用。本發明之無透孔陣列配置之無 效區域4 3,該無效區域内可設置一塗膠區及一固著區,塗膠 區内塗佈有一種UV膠為有機膠以做為假固定之用,一固著區 内塗佈一種玻璃膠做為固著膠之用,實施方式係以藉由參考 對位標示將陰極、陽極構造’進行對位,最後再將陰陽極 板封裝接合。Page 13 200535893 V. Description of the invention (10) Reference of anode and anode structure alignment. The ineffective area 43 of the non-through-hole array configuration of the present invention can be provided with a glue coating area and a fixing area, and a UV glue is coated as an organic glue for the purpose of false fixing. A glass glue is applied as a glue in a fixing area. The embodiment is to align the cathode and anode structures by referring to the registration mark, and finally, the cathode and anode plates are packaged and bonded.

本發明之具有反射層之閘極支撐裝置之場發射顯示器構 造尚且可進一步包含下列細部特性;本發明可進一步包含一 反射層4 4位於該絕緣玻璃板3 8與該陽極阻隔壁丨4之間;且 該反射層44面對該螢光粉層1 1 ;另包含一閘極層位於該絕緣 玻璃板38與該陰極阻隔壁24之間;其中該螢光粉層丨丨可為網 :或喷塗方式所塗佈,又其中該電子發射源層2 3可為網印或 喷ί方式所塗佈;其中該電子發射源層2 3可包含有經改質後 奈米管,具有高電子發射率,且其中該反射構造可具有 Ϊ數t孔隙42,每一該電子發射源層23位於該孔隙42中;其 11? f極阻隔壁14可位於該反射構造與該陽極間,且該陽極 可:;上4Γ形成氣導路徑連通每—孔隙,該陽極阻隔壁14係 传槎:::製程或網印製成圖騰化製作;其中該陰極阻隔壁L 閉極層與陰極電極層之間隙,阻隔壁之厚度係決定 】:J模’該陰極阻隔# 24係可以微 作;據ί!明可使間極之製作可以採用-金屬網軍, νϊ :! 材料膨脹係數近似玻璃基板可為1""〇 極構w Γ ί反射層可為紹膜或絡膜;其中該陽極構造及陰 k、凌時可使用含坡璃材質之固著膠燒結;其中該絕緣The field emission display structure of the gate support device with a reflective layer of the present invention can further include the following detailed characteristics; the present invention can further include a reflective layer 4 4 between the insulating glass plate 38 and the anode barrier wall 4 And the reflective layer 44 faces the phosphor layer 1 1; further comprising a gate layer between the insulating glass plate 38 and the cathode barrier wall 24; wherein the phosphor layer 丨 丨 may be a net: or The electron emission source layer 23 can be coated by spray printing, and the electron emission source layer 23 can be coated by screen printing or spraying. The electron emission source layer 23 can include a modified nanometer tube with high electrons. Emissivity, and wherein the reflective structure may have a number of pores 42, each of the electron emission source layers 23 is located in the pores 42; its 11? F-pole barrier wall 14 may be located between the reflective structure and the anode, and the The anode can :; the upper 4Γ forms a gas-conducting path to communicate with each pore, and the anode barrier wall 14 is transmitted by ::: process or screen printing totem production; where the cathode barrier wall L closed electrode layer and the cathode electrode layer The gap and the thickness of the barrier wall are determined]: J-mode Cathode barrier # 24 series can be micro-worked; according to ί! Ming can make the production of inter-electrode can be used-metal net army, νϊ:! Material expansion coefficient is similar to glass substrates can be 1 " " 〇 Polar structure w Γ Reflective layer can be It is a film or film; the anode structure and the anode and cathode can be sintered with a fixing glue containing slope glass; the insulation

第14頁Page 14

200535893 五、發明說明(11) 玻璃板膨脹係數為8 2x 1 0 -到8 6χ 1 0 _V°C ;其中該陽極阻隔壁 之厚度可為5 0// m至1 〇 〇// m,即可達提供氣導路徑之功效; 其中該陰極阻隔壁之厚度配合本發明使用之高效能低啟始電 壓之奈米碳管電子發射源層,製作厚度可以為30以岐6〇a : m,即可配合8 0 V之驅動電壓電路設計之用。 - 藉以上之詳細揭示驗證,本發明之優點如下;一、製作 簡易,一、本發明裝置可適用大量製程需求;三、大大降低 製輕設備需求及材料成本。 綜上所述,本發明確可達到預期之使用目的,並具新穎 性及進步性,完全符合發明專利申請要件,爰依專利法提出^ 申請,敬請詳查並賜准本案專利,以保障發明者之權利。鲁 :以上所述僅為本發明之較佳可行實施例,非因此即拘 限本餐專利範圍,故舉凡應用本發明說明書及圖式内容 所為之寺效結構變化,均同理皆包含於本發明之範圍内,以 保障發明者之權益,於此陳明。200535893 V. Description of the invention (11) The expansion coefficient of the glass plate is 8 2x 1 0 to 8 6χ 1 0 _V ° C; wherein the thickness of the anode barrier wall can be 50 // m to 100 // m, that is, The thickness of the cathode barrier wall can be matched with the high-efficiency, low-start-voltage nano-carbon tube electron emission source layer used in the present invention, and the thickness can be made 30 to 60 μm, Can be used with 80 V drive voltage circuit design. -Based on the above detailed disclosure and verification, the advantages of the present invention are as follows: 1. It is simple to manufacture, 1. The device of the present invention can be applied to a large number of process requirements; 3. The requirements for light-weight equipment and material costs are greatly reduced. In summary, the present invention can indeed achieve the intended use, and is novel and progressive. It fully meets the requirements for invention patent applications. It is filed in accordance with the Patent Law. ^ Please check and approve the patent in this case to ensure protection. Inventor's rights. Lu: The above description is only the preferred and feasible embodiment of the present invention, and the patent scope of this meal is not limited because of this. Therefore, any changes in the structure of the temple effect that are applied to the description and drawings of the present invention are included in the same reason. Within the scope of the invention, in order to protect the rights and interests of the inventor, hereby.

第15頁 200535893 圖式簡單說明 第一圖、習知場發射顯示器結構; 弟二圖、習知閘極網罩結構不意圖, 第三圖、習知以閘極網罩之場發射顯示器示意圖; 第四圖至第六圖、本發明之具反射層及閘極之支撐裝置 第七圖至第九圖、採用之三種閘極網罩態樣; 第十圖、本發明之場發射顯示器示意圖;及 第十一圖、本發明 之零件絕緣支撐裝置。 【元件符號說明】 陽極構造 10a 陽極玻璃板 11a 陽極導電層 12a 螢光粉體層 13a 絕緣支撐裝置 15a 陰極構造 20a 陰極玻璃板 21a 陰極導電層 22a 電子發射源層 2 3a 介電層 24a 閘極層 陽極板 25a 1, 陰極板 2, 介電層 24’ 支撐裝置 3, 閘極網罩 46’ 閘極導線 461, 陽極構造 1 陽極基板 11 陽極電極層 12 螢光粉體層 13 陽極阻隔壁 14 陰極構造 2 陰極基板 21 陰極電極層 22 電子發射源層 23 陰極阻隔壁 24 支撐裝置 38 孔隙 42Page 15 200535893 The diagram briefly illustrates the first picture, the structure of the conventional field emission display; the second picture, the structure of the conventional gate net cover is not intended, the third picture, the schematic view of the field emission display using the gate grid; The fourth to sixth figures, the support device with a reflective layer and the gate of the present invention, the seventh to the ninth diagrams, the three gate mesh covers adopted; the tenth diagram, the field emission display of the present invention; And Fig. 11 is a component insulation support device of the present invention. [Element symbol description] Anode structure 10a Anode glass plate 11a Anode conductive layer 12a Fluorescent powder layer 13a Insulating support device 15a Cathode structure 20a Cathode glass plate 21a Cathode conductive layer 22a Electron emission source layer 2 3a Dielectric layer 24a Gate layer Anode plate 25a 1, cathode plate 2, dielectric layer 24 'support 3, gate grid 46' gate wire 461, anode structure 1 anode substrate 11 anode electrode layer 12 fluorescent powder layer 13 anode barrier wall 14 cathode Structure 2 Cathode substrate 21 Cathode electrode layer 22 Electron emission source layer 23 Cathode barrier wall 24 Support device 38 Pore 42

第16頁 200535893 圖式簡單說明 反射層 閘極導線 44 461 閘極層 46Page 16 200535893 Brief description of the drawing Reflective layer Gate wire 44 461 Gate layer 46

第17頁Page 17

Claims (1)

200535893200535893 六、申請專利範圍 1、 一種具有反射層及閘極之%發射顯示器構批 僻k,包括 有· 陰極構造’具有電子發射源層及陰極基板;及 陽極構造,具有螢光粉體層及陽極基板; ’ 其中該陰極構造具有陰極阻隔壁,位於該陰極基板之上-且位於該電子發射源層橫向間隔之間; · 其中该陰極構造具有閘極’由金屬網罩構成且位於該, 極阻隔壁之上方; K 其中該場發射顯示器構造進一步具有支撐裝置,位於該 金屬網罩與該陽極構造之間,且面向陽極側具有反射層',Μ 而該反射層具反射該螢光粉體層發出之光的能力。 θ · 2、 如申請專利範圍第1項所述之具有反射層及閘極之場 發射顯示器構造,其中該反射層面對該螢光粉體層。 3、 如申請專利範圍第1項所述之具有反射層i閘極之場 發射顯示器構造,其中該螢光粉體層為網印或喷塗方式冷 佈。 、土 4、 如申請專利範圍第1項所述之具有反射層及閘極之場 發射顯示器構造,其中該電子發射源層為網印或噴塗方式所 塗佈。 5、 如申請專利範圍第丨項所述之具有反射層及閘極之場 f射_示器構造’其中該電子發射源層係包含有經改質後之 碳奈米管,具有高電子發射率。 、 6、 如申請專利範圍第2項所述之具有反射層及閘極之場 ♦射_示器構造,其中該反射層及支撐裝置具有複數個孔6. Scope of patent application 1. A% emission display device with a reflective layer and a gate electrode is approved, including a cathode structure with an electron emission source layer and a cathode substrate; and an anode structure with a fluorescent powder layer and an anode. Substrate; 'wherein the cathode structure has a cathode barrier wall, which is located above the cathode substrate-and between the lateral intervals of the electron emission source layer; · wherein the cathode structure has a gate electrode' which is composed of a metal mesh cover and is located at the electrode Above the barrier wall; K wherein the field emission display structure further has a supporting device, which is located between the metal mesh cover and the anode structure, and has a reflective layer facing the anode side, and the reflective layer has a reflection of the fluorescent powder The ability of the layer to emit light. θ · 2. The field emission display structure with a reflective layer and a gate electrode as described in item 1 of the scope of the patent application, wherein the reflective layer is the phosphor powder layer. 3. The structure of a field emission display with a reflective layer i gate as described in item 1 of the scope of the patent application, wherein the fluorescent powder layer is a screen-printed or spray-coated cold cloth. 4. The structure of a field emission display with a reflective layer and a gate electrode as described in item 1 of the scope of the patent application, wherein the electron emission source layer is coated by screen printing or spray coating. 5. The field emitter structure with a reflective layer and a gate electrode as described in item 丨 of the scope of the patent application, wherein the electron emission source layer includes a modified carbon nanotube and has a high electron emission. rate. 6, 6. The field with a reflective layer and a gate electrode as described in item 2 of the scope of the patent application. ♦ The emitter structure, wherein the reflective layer and the supporting device have a plurality of holes. 第18頁 200535893 六、申請專利範圍 一'一" ~~一' -^—— 严永 ,~&* —古女缔* 7 σ兒子喬射源層位於該孔隙中。 發射顯示如器申構^專利範一圍第6項所述之具有反射層及閑極之場 該陽極間,且访進-一 乂具有一陽極阻隔壁位於該反射層鱼 8、 如 =阻=壁間形成氣導路徑連通每一孔隙。/、 發射顯示器構月造利盆輕^圍第2項所述之具有反射層及閘極之場 9、 如申心σ '、中δ玄反射層為紹膜或鉻膜。 發射顯示器構\專利範圍第7項所述之具有反射層及閘極之場 製程或網印制^闫其中該陰極阻隔壁及陽極阻隔壁可以微影 1 〇、如=i圖騰化製作,材質可為玻璃材質。 場發射顯示哭:專利範圍第1項所述之具有反射層及閘極之 用含玻螭材t ^ ’其中讜陽極構造及陰極構造封裝時係使 工丨何貝之固著膠燒結。 τ印便 士曰π h 9女申凊專利範圍第1項所述之且右;5 4+厣》pq J %叙射顯示哭 rb ^ir Μ -、有反射層及閘極之 V。 ™構k,其中§亥金屬網之膨脹係數為10-到10-ν 場發:2顯專利;所述之具有反射層及閑極之 m。 ,、為構造,其中s亥金屬網罩之厚度為50/z m至10卟 場發t〜申請專利範圍冑1項所述之具有反射層*閑極之 構造,其中=屬網罩材質為鐵鎳合金 場發射顯示器構造,其中該支撐装署之//反射層及閘極之 數為8 2 X 1 〇 —到8 6 X ^ 〇 (凡。 、材貝可為玻璃板膨脹係Page 18 200535893 VI. Scope of patent application One 'One " ~~ One'-^ —— Yan Yong, ~ & * —Ancient Girl Association * 7 The source layer of Qiao's son Qiao is located in the pore. The emission shows a field with a reflective layer and a free pole as described in item 6 of Patent Application ^ Patent Fanwei. The anode is between the anodes, and it is visited-one has an anode barrier located on the reflective layer. = An air-conducting path formed between the walls connects each pore. /, The emission display constructs a lunar pot to make a profit basin, and the field with a reflective layer and a gate electrode described in item 2 9. If Shenxin σ ′, the medium δ meta-reflective layer is a shaw film or a chromium film. The field display process or screen printing with reflective layer and gate electrode described in Item 7 of the scope of the patent, including the cathode barrier wall and anode barrier wall can be lithographed. Can be made of glass. Field emission shows crying: The glass-containing material t ^ ′ with reflective layer and gate electrode described in the first scope of the patent is used for the sintering of the anode glue and cathode structure. τ Indian penny said π h 9 female patent application scope described in item 1 and right; 5 4 + 厣 "pq J% narrative shows cry rb ^ ir Μ-, with reflective layer and gate V. ™ structure k, where § the expansion coefficient of the metal mesh is 10- to 10-ν field emission: 2 display patents; the said has a reflective layer and the m of the pole. , Is a structure, in which the thickness of the metal mesh cover is 50 / zm to 10 porosity, and the structure with a reflective layer * leisure electrode described in the scope of the patent application 胄 1, where = belongs to the mesh cover material is iron The structure of the nickel alloy field emission display, wherein the number of the reflective layer and the gate electrode of the supporting device is 8 2 X 1 0 to 8 6 X ^ 〇 (where. The material can be a glass plate expansion system 第19頁Page 19
TW93111518A 2004-04-23 2004-04-23 Field emission display device structure with reflection layer and gate electrode TWI267099B (en)

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