CN100527339C - Planar display device with capped bottom-grid controlled cathode structure and its production - Google Patents
Planar display device with capped bottom-grid controlled cathode structure and its production Download PDFInfo
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- CN100527339C CN100527339C CNB2007100546059A CN200710054605A CN100527339C CN 100527339 C CN100527339 C CN 100527339C CN B2007100546059 A CNB2007100546059 A CN B2007100546059A CN 200710054605 A CN200710054605 A CN 200710054605A CN 100527339 C CN100527339 C CN 100527339C
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Abstract
This is a flat displayer of cap shape low grid cathode structure and its production process. It includes a sealed vacuum chamber formed by a anodic glass panel, a cathode glass panel and surrounded glass frame; on the anodic glass panel is a conducting layer coated with fluorescent; a supporting wall between the anodic and cathode panel and a getter; on the cathode glass panel are a grid down-lead layer, carbon nanotube and cap shape low grid structure, which is capable of decreasing the working voltage of the rid and increasing the display brightness.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor of capped bottom-grid controlled cathode structure and manufacture craft thereof.
Background technology
Carbon nano-tube has little tip curvature radius, high aspect rate, and good physicochemical properties, and outstanding field emission characteristics are very suitable for as the field emission cold cathode material it.Utilize this principle, carried out the element manufacturing of field-emission plane display.The carbon nanotube cathod field-emitter display is a kind of novel flat panel display equipment, it mutually combines the advantage of cathode-ray tube display and LCD, its higher display brightness can be in the sun light reading data, more Gao Su response speed makes it can adapt to occasion such as quick frame update such as recreation films; Built-in thousands of electron emission sources make its visual angle broader, but also greatly improve the power that is made into of device, even the in use unexpected actual effect of part negative electrode can not impact whole display effect yet.This display had become the representative and the developing direction of flat-panel monitor of future generation already.
At present, in the middle of most carbon nanotube cathod flat-panel display device, all adopted grid structure to be positioned at the tactic pattern of carbon nanotube cathod superstructure.The control action of its grid structure is more remarkable, but the grid operating voltage is high, and formed grid current is also bigger than normal.If further do not reduce operating voltage of grid structure, can only cause the rising of total device cost so, also just can't form product and come into the market, do not meet the quality system requirement of low pressure flat-panel display device simultaneously yet.In device fabrication processes, be subjected to the restriction of various factorss such as concrete material character and manufacture craft, the distance between grid structure and the carbon nanotube cathod structure is excessive, and this is to cause grid operating voltage main reason of high; The macroshape of while carbon nanotube cathod, the control mode of grid structure, shape of carbon nanotube cathod paste composition and grid or the like other factors also can have certain influence to the grid operating voltage.So, these practical problems are gone back relatively perfectly solution of neither one at present.In the manufacturing process of practical devices, just need numerous scientific research personnel to think deeply in earnest, and solve.
In addition, in the middle of the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of capped bottom-grid controlled cathode structure simple in structure.
The object of the present invention is achieved like this, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Be arranged on anode conductive layer and the phosphor powder layer of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component; Cathode glass faceplate is provided with grid lead layer, carbon nano-tube and capped bottom-grid controlled cathode structure.
The backing material of described capped bottom-grid controlled cathode structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer of the printing on the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the grid lead layer; Alternating floor between the insulation paste layer of the printing above the grid lead layer forms; Between the upper and lower surface of alternating floor be the plane, lower surface is wanted complete cover grid trace layer and vacant block layer part; Between have small sircle hole in the alternating floor, as the passage of grid extended line layer; Between the silver slurry layer of printing in the medium and small circular hole of alternating floor form grid extended line layer; Grid extended line layer and grid lead layer are interconnected; Between metal level after the etching above the alternating floor form the regulation and control grid layer; The regulation and control grid layer depends on the upper surface of an alternating floor, presents disc face type shape, and its lower surface and grid extended line layer are interconnected, and interlinkage is positioned at the home position of regulation and control grid layer lower surface; The insulation paste layer of the printing above the regulation and control grid layer forms two layers at interval; At interval two layers lower surface is the plane, cover fully the regulation and control grid layer and vacant between the alternating floor upper surface portion; Two layers upper surface major part is the plane at interval, but has a dome-type projection at the upper section that is positioned at the regulation and control grid layer, and the round bottom surface of this dome-type projection overlaps fully with the disc face type shape of regulation and control grid layer; Metal level after the etching on the dome-type raised surface on the two layers of upper surface in interval forms the negative electrode transition zone; The negative electrode transition zone presents the circular ring type shape, depends on the surface of dome-type shape, and near dome-type projection and position, two layers of upper surface boundary, interval; Metal level after the etching above two layers forms the cathode leg layer at interval; The insulation paste layer of the printing above the cathode leg layer forms cathode coating; Metal level after the etching above the negative electrode transition zone forms cathode conductive layer; Cathode conductive layer is covered with the upper surface of negative electrode transition zone; Cathode leg layer, negative electrode transition zone and cathode conductive layer all are interconnected; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described capped bottom-grid controlled cathode structure is for being fixed on the cathode glass faceplate; The cathode leg layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin, lead; The negative electrode transition zone can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin; Cathode conductive layer can be metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The regulation and control grid layer can be metallic gold, silver, aluminium, molybdenum, chromium; The grid lead layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium.
A kind of manufacture craft of flat-panel monitor of capped bottom-grid controlled cathode structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of block layer: on cathode glass faceplate, print insulation paste, behind baking, sintering process, form block layer;
3) making of grid lead layer: on block layer, prepare a metal level, form the grid lead layer after the etching;
4) making of alternating floor between: printing insulation paste on the grid lead layer, alternating floor between forming behind baking, the sintering process;
5) making of grid extended line layer: printed silver slurry in the aperture in an alternating floor forms grid extended line layer behind baking, sintering process;
6) making of regulation and control grid layer: preparing a metal level above the alternating floor, forming the regulation and control grid layer after the etching;
7) two layers making at interval: printing insulation paste layer on the regulation and control grid layer forms two layers at interval behind baking, sintering process;
8) making of negative electrode transition zone: preparing a metal level on two layers of dome-type raised surface at interval, forming the negative electrode transition zone after the etching;
9) making of cathode leg layer: preparing a metal level above two layers at interval, forming the cathode leg layer after the etching;
10) making of cathode coating: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
11) making of cathode conductive layer: on the negative electrode transition zone, prepare a metal level, form cathode conductive layer after the etching;
12) cleaning surfaces of capped bottom-grid controlled cathode structure is handled: clean is carried out on the surface to capped bottom-grid controlled cathode structure, removes impurity and dust;
13) preparation of carbon nano-tube: with made of carbon nanotubes on cathode conductive layer;
14) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
15) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
16) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
17) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
18) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
19) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 16 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 17 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 19 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described capped bottom-grid controlled cathode structure, grid lead layer, grid extended line layer and regulation and control grid layer structure have been made respectively.Wherein the grid lead layer can be delivered to device inside with external voltage, also has the function of pixel matrix addressing simultaneously; Grid extended line layer is that grid lead layer and regulation and control grid layer are connected with each other, and plays the effect of transfer overvoltage; The regulation and control grid layer then is the electronics emission of specifically controlling carbon nanotube cathod.When after applying appropriate voltage on the grid structure, will form powerful electric field strength on top, carbon nanotube cathod surface, force carbon nano-tube to launch a large amount of electronics, institute's electrons emitted is under the anode action of high voltage, bombard the phosphor anode layer and send visible light, this has just embodied the powerful controlled function of grid structure.Because grid structure is positioned at the below of carbon nanotube cathod structure, and is spaced apart the two layers of isolation that covers, so the electrons emitted Shu Buhui of institute is subjected to holding back of grid structure, greatly reduced grid current, helps improving the display brightness of device.Because the end of regulation and control grid layer can approach carbon nanotube cathod as much as possible, thereby can greatly reduce operating voltage of grid structure.
Secondly, in described capped bottom-grid controlled cathode structure, the carbon nanotube cathod preparation is being presented above the circular cathode conductive layer.Like this, make full use of the phenomenon that marginal position can be launched a large amount of electronics in the carbon nanotube cathod, improved the electronic transmitting efficiency of carbon nanotube cathod, also increased the electron emission area of carbon nanotube cathod simultaneously; Grid structure and cathode construction height are integrated together, help lend some impetus to the Highgrade integration development of integral device;
In addition, in described capped bottom-grid controlled cathode structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of capped bottom-grid controlled cathode structure;
Fig. 2 has provided the transversary schematic diagram of capped bottom-grid controlled cathode structure;
Fig. 3 has provided and has had the structural representation capped bottom-grid controlled cathode structure emitting structural, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
The present invention includes by anode glass panel [13], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [18] is constituted; Anode conductive layer [14] and the phosphor powder layer [16] of preparation on anode conductive layer are arranged on the anode glass panel; Grid lead layer [3], carbon nano-tube [12] and capped bottom-grid controlled cathode structure are arranged on cathode glass faceplate; Supporting wall structure between anode glass panel and cathode glass faceplate [17] and getter [19] subsidiary component.
Described capped bottom-grid controlled cathode structure comprises cathode glass faceplate [1], block layer [2], grid lead layer [3], an alternating floor [4], grid extended line layer [5], regulation and control grid layer [6], interval two layers of [7], negative electrode transition zone [8], cathode leg layer [9], cathode coating [10], cathode conductive layer [11] and carbon nano-tube [12] part.
The backing material of described capped bottom-grid controlled cathode structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer of the printing on the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the grid lead layer; Alternating floor between the insulation paste layer of the printing above the grid lead layer forms; Between the upper and lower surface of alternating floor be the plane, lower surface is wanted complete cover grid trace layer and vacant block layer part; Between have small sircle hole in the alternating floor, as the passage of grid extended line layer; Between the silver slurry layer of printing in the medium and small circular hole of alternating floor form grid extended line layer; Grid extended line layer and grid lead layer are interconnected; Between metal level after the etching above the alternating floor form the regulation and control grid layer; The regulation and control grid layer depends on the upper surface of an alternating floor, presents disc face type shape, and its lower surface and grid extended line layer are interconnected, and interlinkage is positioned at the home position of regulation and control grid layer lower surface; The insulation paste layer of the printing above the regulation and control grid layer forms two layers at interval; At interval two layers lower surface is the plane, cover fully the regulation and control grid layer and vacant between the alternating floor upper surface portion; Two layers upper surface major part is the plane at interval, but has a dome-type projection at the upper section that is positioned at the regulation and control grid layer, and the round bottom surface of this dome-type projection overlaps fully with the disc face type shape of regulation and control grid layer; Metal level after the etching on the dome-type raised surface on the two layers of upper surface in interval forms the negative electrode transition zone; The negative electrode transition zone presents the circular ring type shape, depends on the surface of dome-type shape, and near dome-type projection and position, two layers of upper surface boundary, interval; Metal level after the etching above two layers forms the cathode leg layer at interval; The insulation paste layer of the printing above the cathode leg layer forms cathode coating; Metal level after the etching above the negative electrode transition zone forms cathode conductive layer; Cathode conductive layer is covered with the upper surface of negative electrode transition zone; Cathode leg layer, negative electrode transition zone and cathode conductive layer all are interconnected; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described capped bottom-grid controlled cathode structure is for being fixed on the cathode glass faceplate; The cathode leg layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin, lead; The negative electrode transition zone can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin; Cathode conductive layer can be metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The regulation and control grid layer can be metallic gold, silver, aluminium, molybdenum, chromium; The grid lead layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium.
A kind of manufacture craft that has the flat-panel monitor of capped bottom-grid controlled cathode structure, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of block layer [2]: on cathode glass faceplate, print insulation paste, behind baking, sintering process, form block layer;
3) making of grid lead layer [3]: on block layer, prepare a metallic chromium layer, form the grid lead layer after the etching;
The making of alternating floor 4) [4]: printing insulation paste on the grid lead layer, alternating floor between forming behind baking, the sintering process;
5) making of grid extended line layer [5]: printed silver slurry in the aperture in an alternating floor forms grid extended line layer behind baking, sintering process;
6) making of regulation and control grid layers [6]: preparing a metallic chromium layer above the alternating floor, forming the regulation and control grid layer after the etching;
7) making of two layers [7] at interval: printing insulation paste layer on the regulation and control grid layer forms two layers at interval behind baking, sintering process;
8) making of negative electrode transition zone [8]: preparing a metal molybdenum layer on two layers of dome-type raised surface at interval, forming the negative electrode transition zone after the etching;
9) making of cathode leg layer [9]: preparing a metal molybdenum layer above two layers at interval, forming the cathode leg layer after the etching;
10) making of cathode coating [10]: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
11) making of cathode conductive layer [11]: on the negative electrode transition zone, prepare a metal nickel dam, form cathode conductive layer after the etching;
12) cleaning surfaces of capped bottom-grid controlled cathode structure is handled: clean is carried out on the surface to capped bottom-grid controlled cathode structure, removes impurity and dust;
13) preparation of carbon nano-tube [12]: with made of carbon nanotubes on cathode conductive layer;
14) reprocessing of carbon nano-tube: carbon nano-tube is carried out reprocessing, improve field emission characteristics:
15) making of anode glass panel [13]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
16) making of anode conductive layer [14]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
17) making of insulation paste layer [15]: at the non-display area printing insulation paste layer of anode conductive layer;
18) making of phosphor powder layer [16]: the viewing area printing phosphor powder layer on anode conductive layer;
19) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [17] and all around glass enclose frame [18] and be assembled together, and getter [19] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
20) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 17 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 18 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 20 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor of capped bottom-grid controlled cathode structure, comprise by anode glass panel (13), cathode glass faceplate (1) and all around glass enclose the sealed vacuum chamber that frame (18) is constituted; Be arranged on anode conductive layer (14) and the phosphor powder layer (16) of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate (17) and getter subsidiary component (19) is characterized in that:
Cathode glass faceplate is provided with grid lead layer (3), carbon nano-tube (12) and capped bottom-grid controlled cathode structure;
The backing material of described capped bottom-grid controlled cathode structure is soda-lime glass or Pyrex; The insulation paste layer of the printing on the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the grid lead layer; Alternating floor between the insulation paste layer of the printing above the grid lead layer forms; Between the upper and lower surface of alternating floor be the plane, lower surface is wanted complete cover grid trace layer and vacant block layer part; Between have small sircle hole in the alternating floor, as the passage of grid extended line layer; Between the silver slurry layer of printing in the medium and small circular hole of alternating floor form grid extended line layer; Grid extended line layer and grid lead layer are interconnected; Between metal level after the etching above the alternating floor form the regulation and control grid layer; The regulation and control grid layer depends on the upper surface of an alternating floor, presents disc face type shape, and its lower surface and grid extended line layer are interconnected, and interlinkage is positioned at the home position of regulation and control grid layer lower surface; The insulation paste layer of the printing above the regulation and control grid layer forms two layers at interval; At interval two layers lower surface is the plane, cover fully the regulation and control grid layer and vacant between the alternating floor upper surface portion; Two layers upper surface major part is the plane at interval, but has a dome-type projection at the upper section that is positioned at the regulation and control grid layer, and the round bottom surface of this dome-type projection overlaps fully with the disc face type shape of regulation and control grid layer; Metal level after the etching on the dome-type raised surface on the two layers of upper surface in interval forms the negative electrode transition zone; The negative electrode transition zone presents the circular ring type shape, depends on the surface of dome-type shape, and near dome-type projection and position, two layers of upper surface boundary, interval; Metal level after the etching above two layers forms the cathode leg layer at interval; The insulation paste layer of the printing above the cathode leg layer forms cathode coating; Metal level after the etching above the negative electrode transition zone forms cathode conductive layer; Cathode conductive layer is covered with the upper surface of negative electrode transition zone; Cathode leg layer, negative electrode transition zone and cathode conductive layer all are interconnected; Made of carbon nanotubes is on cathode conductive layer.
2, the flat-panel monitor of capped bottom-grid controlled cathode structure according to claim 1 is characterized in that: the fixed position of described capped bottom-grid controlled cathode structure is for being fixed on the cathode glass faceplate; The cathode leg layer is one of metal gold, silver, copper, aluminium, molybdenum, chromium, tin, lead; The negative electrode transition zone is one of metal gold, silver, copper, aluminium, molybdenum, chromium, tin; Cathode conductive layer is one of metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is vertical mutually; The regulation and control grid layer is one of metal gold, silver, aluminium, molybdenum, chromium; The grid lead layer is one of metal gold, silver, copper, aluminium, molybdenum, chromium.
3, a kind of manufacture craft of flat-panel monitor of capped bottom-grid controlled cathode structure as claimed in claim 1 is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate (1): whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of block layer (2): on cathode glass faceplate, print insulation paste, behind baking, sintering process, form block layer;
3) making of grid lead layer (3): on block layer, prepare a metal level, form the grid lead layer after the etching;
The making of alternating floor 4) (4): printing insulation paste on the grid lead layer, alternating floor between forming behind baking, the sintering process;
5) making of grid extended line layer (5): printed silver slurry in the aperture in an alternating floor forms grid extended line layer behind baking, sintering process;
6) making of regulation and control grid layers (6): preparing a metal level above the alternating floor, forming the regulation and control grid layer after the etching;
7) making of two layers (7) at interval: printing insulation paste layer on the regulation and control grid layer forms two layers at interval behind baking, sintering process;
8) making of negative electrode transition zone (8): preparing a metal level on two layers of dome-type raised surface at interval, forming the negative electrode transition zone after the etching;
9) making of cathode leg layer (9): preparing a metal level above two layers at interval, forming the cathode leg layer after the etching;
10) making of cathode coating (10): printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
11) making of cathode conductive layer (11): on the negative electrode transition zone, prepare a metal level, form cathode conductive layer after the etching;
12) cleaning surfaces of capped bottom-grid controlled cathode structure is handled: clean is carried out on the surface to capped bottom-grid controlled cathode structure, removes impurity and dust;
13) preparation of carbon nano-tube (12): with made of carbon nanotubes on cathode conductive layer;
14) making of anode glass panel (13): the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
15) making of anode conductive layer (14): evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
16) making of insulation paste layer (15): at the non-display area printing insulation paste layer of anode conductive layer;
17) making of phosphor powder layer (16): the viewing area printing phosphor powder layer on anode conductive layer;
18) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure (17) and all around glass enclose frame (18) and be assembled together, and getter subsidiary component (19) is put in the middle of the cavity, fix with glass powder with low melting point;
19) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of capped bottom-grid controlled cathode structure according to claim 3 is characterized in that: described step 16 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of capped bottom-grid controlled cathode structure according to claim 3 is characterized in that: described step 17 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of capped bottom-grid controlled cathode structure according to claim 3 is characterized in that: the device that described step 19 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter subsidiary component (19) of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100546059A CN100527339C (en) | 2007-06-19 | 2007-06-19 | Planar display device with capped bottom-grid controlled cathode structure and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100546059A CN100527339C (en) | 2007-06-19 | 2007-06-19 | Planar display device with capped bottom-grid controlled cathode structure and its production |
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| Publication Number | Publication Date |
|---|---|
| CN101075538A CN101075538A (en) | 2007-11-21 |
| CN100527339C true CN100527339C (en) | 2009-08-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128923A (en) * | 2016-07-07 | 2016-11-16 | 金陵科技学院 | The active display of bowl-type ring cathode construction is inverted in the two-door control of parallel long front |
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2007
- 2007-06-19 CN CNB2007100546059A patent/CN100527339C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128923A (en) * | 2016-07-07 | 2016-11-16 | 金陵科技学院 | The active display of bowl-type ring cathode construction is inverted in the two-door control of parallel long front |
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| CN101075538A (en) | 2007-11-21 |
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