CN101071741B - Flat-panel display device with ring-gate modulated valley cathode structure and its preparing process - Google Patents
Flat-panel display device with ring-gate modulated valley cathode structure and its preparing process Download PDFInfo
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- CN101071741B CN101071741B CN200710054628XA CN200710054628A CN101071741B CN 101071741 B CN101071741 B CN 101071741B CN 200710054628X A CN200710054628X A CN 200710054628XA CN 200710054628 A CN200710054628 A CN 200710054628A CN 101071741 B CN101071741 B CN 101071741B
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Abstract
The invention relates to a flat-panel display of an annular grid-controlled valley mouth-type cathode structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel; and grid lead layer, carbon nanotube and annular grid-controlled valley mouth-type cathode structure on the cathode glass panel; and it can further improve whole displayed image quality and reduce operating voltage of grid, and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, relate to a kind of flat-panel monitor and manufacture craft thereof of ring-gate modulated valley cathode structure.
Background technology
Carbon nano tube field emission display is a kind of novel flat panel display equipment, is described as the flat-panel screens of future ideality.This demonstration its have high-resolution, high brightness, high-luminous-efficiency, good performance characteristics such as the visual angle is wide, operation temperature area is big, slimming and picture rich in detail bright in luster, response speed are fast, can be widely used in various device for display of message fields such as mobile phone, plane wall hung TV, big screen display screen, the visual mirror of helmet-type, for great contribution has been made in economic development and the social development of information age.It is with the high image quality of cathode-ray tube display, and the large tracts of land of plasma scope and the advantages such as ultrathin type of LCD roll into one, and have become the developing direction of international flat panel display of new generation already.
In the middle of the carbon nanotube cathod field emission flat-panel display of three-stage structure, grid structure plays conclusive control action for the electronics emission of carbon nanotube cathod, and the operating voltage of grid structure size also is one of important technology index of low pressure flat panel display equipment quality system simultaneously.Under the situation of having only operating voltage of grid structure and conventional at present integrated drive electronics voltage to be consistent or being close, can significantly reduce the production cost of total device.As and if reduce operating voltage of grid structure is a problem that is difficult to overcome, and in the middle of the present carbon nanotube cathod field emission display device of developing, all exists the high shortcoming of grid voltage.In addition, in order further to improve the display brightness of integral device, also need more carbon nanotube cathod and carry out the electronics emission, this need improve the electronic transmitting efficiency of carbon nanotube cathod on the one hand, make carbon nanotube cathod can launch more electronics, need to increase the electron emission area of carbon nanotube cathod on the other hand.And, also need conscientious in addition thinking and research at present for these problems more satisfactory solution of neither one also.
In addition, in the middle of the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of ring-gate modulated valley cathode structure simple in structure.
The object of the present invention is achieved like this, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Grid lead layer, carbon nano-tube and ring-gate modulated valley cathode structure are arranged on cathode glass faceplate; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component.
The backing material of described ring-gate modulated valley cathode structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer of the printing above the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the grid lead layer; The insulation paste layer of the printing above the grid lead layer forms grid and increases layer; The upper and lower surface that grid increases layer is the plane, and lower surface is wanted cover grid trace layer and vacant block layer part; Grid increases and has small sircle hole in the layer, as the passage of grid extended line layer; Grid increases the silver slurry layer that prints in the small sircle hole in the layer and forms grid extended line layer; Grid extended line layer and grid lead layer are interconnected; The metal level that grid increases after the etching on layer upper surface forms the grid tube preparative layer; Grid tube preparative layer and grid extended line layer are interconnected; The grid tube preparative layer presents the circular ring type shape, depend on grid increase the layer upper surface on; The insulation paste layer of the printing above the grid tube preparative layer forms wall; The upper and lower surface of wall is the plane, and lower surface wants cover grid control layer and grid to increase layer; There is type hole, the mouth of a valley in the wall, the bottom that is type hole, the mouth of a valley presents disc face type shape, expose following grid tube preparative layer upper surface, and bottom disc face type shape is positioned at the centre position of annular grid tube preparative layer, the center of the two overlaps, and the diameter of mouth of a valley type bottom disc face is less than the interior diameter of annular grid tube preparative layer; Wall two-story valley shape of the mouth as one speaks hole forms the disc type shape of a hollow at the upper surface of wall, its diameter is identical with the overall diameter of ring-type grid control layer, upper surface from wall, its most of side all forms an inclined-plane, but there is an inside recessed triangular form shape in the mid portion on the inclined-plane, the base of triangular form is positioned on the inclined-plane in type hole, the mouth of a valley, and its wedge angle points to the grid tube preparative layer; Wall two-story valley shape of the mouth as one speaks hole presents annular, be seated ring-type grid control layer above; Metal level after the etching on the madial wall in wall two-story valley shape of the mouth as one speaks hole forms the negative electrode transition zone; The negative electrode transition zone is covered with the madial wall in type hole, the mouth of a valley; Metal level after the etching above the negative electrode transition zone forms cathode conductive layer; Metal level after the etching on the wall upper surface forms the cathode leg layer; Cathode leg layer, negative electrode transition zone and cathode conductive layer all are interconnected; The insulation paste layer of the printing above the cathode leg layer forms cathode coating; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described ring-gate modulated valley cathode structure is for being fixed on the cathode glass faceplate; The grid lead layer can be metallic gold, silver, aluminium, molybdenum, chromium; The grid tube preparative layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin; The trend of the trend of cathode leg layer and grid lead layer is orthogonal; The cathode leg layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin, lead, indium; The negative electrode transition zone can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin; Cathode conductive layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft of flat-panel monitor of ring-gate modulated valley cathode structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of block layer: printing insulation paste layer on cathode glass faceplate forms block layer behind baking, sintering process;
3) making of grid lead layer: on block layer, prepare a metal level, form the grid lead layer after the etching;
4) grid increases the making of layer: printing insulation paste layer on the grid lead layer forms grid and increases layer behind baking, sintering process;
5) making of grid extended line layer: printed silver slurry in grid increases layer small sircle hole forms grid extended line layer behind baking, sintering process;
6) making of grid tube preparative layer: increase at grid and to prepare a metal level on layer upper surface, form the grid tube preparative layer after the etching;
7) making of wall: printing insulation paste layer on the grid tube preparative layer forms wall behind baking, sintering process;
8) making of negative electrode transition zone: on the madial wall in wall two-story valley shape of the mouth as one speaks hole, prepare a metal level, form the negative electrode transition zone after the etching;
9) making of cathode conductive layer: on the negative electrode transition zone, prepare a metal level, form cathode conductive layer after the etching;
10) making of cathode leg layer: on the wall upper surface, prepare a metal level, form the cathode leg layer after the etching;
11) making of cathode coating: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
12) cleaning surfaces of ring-gate modulated valley cathode structure is handled: clean is carried out on the surface to ring-gate modulated valley cathode structure, removes impurity and dust;
13) preparation of carbon nano-tube: with made of carbon nanotubes on cathode conductive layer;
14) making of anode glass panel: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
15) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
16) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
17) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
18) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
19) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 16 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 17 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 19 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described ring-gate modulated valley cathode structure, with carbon nanotube cathod preparation present cathode conductive layer above the madial wall of type hole, the mouth of a valley above.Like this, change the shape of macroscopic carbon nanotube negative electrode, its curvature is diminished, made full use of unique phenomenon that the carbon nanotube cathod marginal position can be launched a large amount of electronics, improve the electronic transmitting efficiency of carbon nanotube cathod, also helped further to reduce simultaneously operating voltage of grid structure.Increase the electron emission area of carbon nanotube cathod, helped to improve the display brightness of device.Grid structure and cathode construction height are integrated together, help lend some impetus to the Highgrade integration development of integral device.
Secondly, in described ring-gate modulated valley cathode structure, made side screen-gri structure.When after applying appropriate voltage on the grid structure, will form powerful electric field strength on top, carbon nanotube cathod surface, force carbon nano-tube to launch a large amount of electronics, embodied the strong controlled function of grid structure.Because grid structure is positioned at the side of carbon nanotube cathod, and is spaced apart layer and covers, so can not reduce grid current holding back from carbon nanotube cathod electrons emitted Shu Jinhang.Since grid structure present circular ring type be looped around carbon nanotube cathod around, can uniformly external voltage be imposed on carbon nanotube cathod, guarantee uniformity and stability that integral device is luminous.
In addition, in described ring-gate modulated valley cathode structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of ring-gate modulated valley cathode structure;
Fig. 2 has provided the transversary schematic diagram of ring-gate modulated valley cathode structure;
Fig. 3 has provided and has had structural representation ring-gate modulated valley cathode structure, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has ring-gate modulated valley cathode structure, comprise by anode glass panel [13], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [18] is constituted; Anode conductive layer [14] and the phosphor powder layer [16] of preparation on anode conductive layer are arranged on the anode glass panel; Grid lead layer [3], carbon nano-tube [12] and ring-gate modulated valley cathode structure are arranged on cathode glass faceplate; Supporting wall structure between anode glass panel and cathode glass faceplate [17] and getter [19] subsidiary component.
Described ring-gate modulated valley cathode structure comprises that cathode glass faceplate [1], block layer [2], grid lead layer [3], grid increase layer [4], grid extended line layer [5], grid tube preparative layer [6], wall [7], negative electrode transition zone [8], cathode conductive layer [9], cathode leg layer [10], cathode coating [11] and carbon nano-tube [12] part.
The backing material of described ring-gate modulated valley cathode structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer of the printing above the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the grid lead layer; The insulation paste layer of the printing above the grid lead layer forms grid and increases layer; The upper and lower surface that grid increases layer is the plane, and lower surface is wanted cover grid trace layer and vacant block layer part; Grid increases and has small sircle hole in the layer, as the passage of grid extended line layer; Grid increases the silver slurry layer that prints in the small sircle hole in the layer and forms grid extended line layer; Grid extended line layer and grid lead layer are interconnected; The metal level that grid increases after the etching on layer upper surface forms the grid tube preparative layer; Grid tube preparative layer and grid extended line layer are interconnected; The grid tube preparative layer presents the circular ring type shape, depend on grid increase the layer upper surface on; The insulation paste layer of the printing above the grid tube preparative layer forms wall; The upper and lower surface of wall is the plane, and lower surface wants cover grid control layer and grid to increase layer; There is type hole, the mouth of a valley in the wall, the bottom that is type hole, the mouth of a valley presents disc face type shape, expose following grid tube preparative layer upper surface, and bottom disc face type shape is positioned at the centre position of annular grid tube preparative layer, the center of the two overlaps, and the diameter of mouth of a valley type bottom disc face is less than the interior diameter of annular grid tube preparative layer; Wall two-story valley shape of the mouth as one speaks hole forms the disc type shape of a hollow at the upper surface of wall, its diameter is identical with the overall diameter of ring-type grid control layer, upper surface from wall, its most of side all forms an inclined-plane, but there is an inside recessed triangular form shape in the mid portion on the inclined-plane, the base of triangular form is positioned on the inclined-plane in type hole, the mouth of a valley, and its wedge angle points to the grid tube preparative layer; Wall two-story valley shape of the mouth as one speaks hole presents annular, be seated ring-type grid control layer above; Metal level after the etching on the madial wall in wall two-story valley shape of the mouth as one speaks hole forms the negative electrode transition zone; The negative electrode transition zone is covered with the madial wall in type hole, the mouth of a valley; Metal level after the etching above the negative electrode transition zone forms cathode conductive layer; Metal level after the etching on the wall upper surface forms the cathode leg layer; Cathode leg layer, negative electrode transition zone and cathode conductive layer all are interconnected; The insulation paste layer of the printing above the cathode leg layer forms cathode coating; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described ring-gate modulated valley cathode structure is for being fixed on the cathode glass faceplate; The grid lead layer can be metallic gold, silver, aluminium, molybdenum, chromium; The grid tube preparative layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin; The trend of the trend of cathode leg layer and grid lead layer is orthogonal; The cathode leg layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin, lead, indium; The negative electrode transition zone can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin; Cathode conductive layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of ring-gate modulated valley cathode structure, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of block layer [2]: printing insulation paste layer on cathode glass faceplate forms block layer behind baking, sintering process;
3) making of grid lead layer [3]: on block layer, prepare a metallic chromium layer, form the grid lead layer after the etching;
4) grid increases the making of layer [4]: printing insulation paste layer on the grid lead layer forms grid and increases layer behind baking, sintering process;
5) making of grid extended line layer [5]: printed silver slurry in grid increases layer small sircle hole forms grid extended line layer behind baking, sintering process;
6) making of grid tube preparative layer [6]: increase at grid and to prepare a metallic chromium layer on layer upper surface, form the grid tube preparative layer after the etching;
7) making of wall [7]: printing insulation paste layer on the grid tube preparative layer forms wall behind baking, sintering process;
8) making of negative electrode transition zone [8]: on the madial wall in wall two-story valley shape of the mouth as one speaks hole, prepare a metal molybdenum layer, form the negative electrode transition zone after the etching;
9) making of cathode conductive layer [9]: on the negative electrode transition zone, prepare a layer of metal cobalt, form cathode conductive layer after the etching;
10) making of cathode leg layer [10]: on the wall upper surface, prepare a metal molybdenum layer, form the cathode leg layer after the etching;
11) making of cathode coating [11]: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
12) cleaning surfaces of ring-gate modulated valley cathode structure is handled: clean is carried out on the surface to ring-gate modulated valley cathode structure, removes impurity and dust;
13) preparation of carbon nano-tube [12]: with made of carbon nanotubes on cathode conductive layer;
14) reprocessing of carbon nano-tube: carbon nano-tube is carried out reprocessing, improve field emission characteristics;
15) making of anode glass panel [13]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
16) making of anode conductive layer [14]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
17) making of insulation paste layer [15]: at the non-display area printing insulation paste layer of anode conductive layer;
18) making of phosphor powder layer [16]: the viewing area printing phosphor powder layer on anode conductive layer;
19) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [17] and all around glass enclose frame [18] and be assembled together, and getter [19] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
20) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 17 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 18 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 20 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1. the flat-panel monitor of a ring-gate modulated valley shape cathode construction, comprise by anode glass panel [13], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [18] constitutes; Be arranged on anode conductive layer [14] and the phosphor powder layer [16] of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [17] and getter subsidiary component [19]; It is characterized in that: grid lead layer [3], carbon nano-tube [12] and ring-gate modulated valley shape cathode construction are arranged on cathode glass faceplate, and the backing material of described ring-gate modulated valley shape cathode construction is soda-lime glass or Pyrex, i.e. cathode glass faceplate; The insulation paste layer of the printing above the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the grid lead layer; The insulation paste layer of the printing above the grid lead layer forms grid and increases layer; Grid increases a layer upper and lower surface and is the plane, and lower surface is wanted cover grid trace layer and vacant block layer part; Grid increases and has small sircle hole in the layer, as the passage of grid extended line layer; Grid increases the silver slurry layer that prints in the small sircle hole in the layer and forms grid extended line layer; Grid extended line layer and grid lead layer are interconnected; The metal level that grid increases after the etching on layer upper surface forms the grid tube preparative layer; Grid tube preparative layer and grid extended line layer are interconnected; The grid tube preparative layer presents the annular shape, depend on grid increase the layer upper surface on; The insulation paste layer of the printing of the upper surface of grid tube preparative layer forms wall; The upper and lower surface of wall is the plane, and lower surface wants cover grid control layer and grid to increase layer; There is shape hole, the mouth of a valley in the wall, the bottom that is shape hole, the mouth of a valley presents disc face shape shape, bottom disc face shape shape is positioned at the centre position of annular grid tube preparative layer, the center of the two overlaps, and the diameter of mouth of a valley shape bottom disc face is less than the interior diameter of annular grid tube preparative layer; Wall two-story valley degree of lip-rounding hole forms the disc shape shape of a hollow at the upper surface of wall, its diameter is identical with the overall diameter of annular grid tube preparative layer, upper surface from wall, its most of side all forms an inclined-plane, but the mid portion on inclined-plane exist one inside recessed triangular shaped, leg-of-mutton base is positioned on the inclined-plane in shape hole, the mouth of a valley, and its wedge angle tiltedly points to the grid tube preparative layer; Wall two-story valley degree of lip-rounding hole presents annular, be seated annular grid tube preparative layer above; Metal level after the etching on the madial wall in wall two-story valley degree of lip-rounding hole forms the negative electrode transition zone; The negative electrode transition zone is covered with the madial wall in shape hole, the mouth of a valley; Metal level after the etching above the negative electrode transition zone forms cathode conductive layer; Metal level after the etching on the wall upper surface forms the cathode leg layer; Cathode leg layer, negative electrode transition zone and cathode conductive layer all are interconnected; The insulation paste layer of the printing above the cathode leg layer forms cathode coating; Made of carbon nanotubes is on cathode conductive layer.
2. the flat-panel monitor of ring-gate modulated valley shape cathode construction according to claim 2 is characterized in that: described ring-gate modulated valley shape cathode construction is fixed on the cathode glass faceplate; The grid lead layer is metal gold, silver, aluminium, molybdenum or chromium; The grid tube preparative layer is metal gold, silver, copper, aluminium, molybdenum, chromium or tin; The trend of the trend of cathode leg layer and grid lead layer is vertical mutually; The cathode leg layer is metal gold, silver, copper, aluminium, molybdenum, chromium, tin, lead or indium; The negative electrode transition zone is metal gold, silver, copper, aluminium, molybdenum, chromium or tin; Cathode conductive layer is metallic iron, cobalt or nickel.
3. the manufacture craft of the flat-panel monitor of a ring-gate modulated valley shape cathode construction is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of block layer [2]: printing insulation paste layer on cathode glass faceplate forms block layer behind baking, sintering process;
3) making of grid lead layer [3]: on block layer, prepare a metal level, form the grid lead layer after the etching;
4) grid increases the making of layer [4]: printing insulation paste layer on the grid lead layer, behind baking, sintering process, form grid and increase layer, grid increases a layer upper and lower surface and is the plane, and lower surface is wanted cover grid trace layer and vacant block layer part; Grid increases and has small sircle hole in the layer, as the passage of grid extended line layer;
5) making of grid extended line layer [5]: increase at grid and to form small sircle hole in the layer, printed silver slurry in described small sircle hole forms grid extended line layer behind baking, sintering process, and grid extended line layer and grid lead layer are interconnected;
6) making of grid tube preparative layer [6]: increase at grid and to prepare a metal level on layer upper surface, form the grid tube preparative layer after the etching, grid tube preparative layer and grid extended line layer are interconnected; The grid tube preparative layer presents the annular shape, depend on grid increase the layer upper surface on;
7) making of wall [7]: printing insulation paste layer on the grid tube preparative layer, behind baking, sintering process, form wall, the upper and lower surface of wall is the plane, and lower surface wants cover grid control layer and grid to increase layer; There is shape hole, the mouth of a valley in the wall, the bottom that is shape hole, the mouth of a valley presents disc face shape shape, bottom disc face shape shape is positioned at the centre position of annular grid tube preparative layer, the center of the two overlaps, and the diameter of mouth of a valley shape bottom disc face is less than the interior diameter of annular grid tube preparative layer; Wall two-story valley degree of lip-rounding hole forms the disc shape shape of a hollow at the upper surface of wall, its diameter is identical with the overall diameter of annular grid tube preparative layer, upper surface from wall, its most of side all forms an inclined-plane, but the mid portion on inclined-plane exist one inside recessed triangular shaped, leg-of-mutton base is positioned on the inclined-plane in shape hole, the mouth of a valley, and its wedge angle tiltedly points to the grid tube preparative layer; Wall two-story valley degree of lip-rounding hole presents annular, be seated annular grid tube preparative layer above;
8) making of negative electrode transition zone [8]: prepare a metal level on the madial wall in wall two-story valley degree of lip-rounding hole, form the negative electrode transition zone after the etching, the negative electrode transition zone is covered with the madial wall in shape hole, the mouth of a valley;
9) making of cathode conductive layer [9]: on the negative electrode transition zone, prepare a metal level, form cathode conductive layer after the etching;
10) making of cathode leg layer [10]: prepare a metal level on the wall upper surface, form the cathode leg layer after the etching, cathode leg layer, negative electrode transition zone and cathode conductive layer all are interconnected;
11) making of cathode coating [11]: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
12) cleaning surfaces of ring-gate modulated valley shape cathode construction is handled: clean is carried out on the surface to ring-gate modulated valley shape cathode construction, removes impurity and dust;
13) preparation of carbon nano-tube [12]: with made of carbon nanotubes on cathode conductive layer;
14) making of anode glass panel [13]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
15) making of anode conductive layer [14]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
16) making of insulation paste layer [15]: at the non-display area printing insulation paste layer of anode conductive layer;
17) making of phosphor powder layer [16]: the viewing area printing phosphor powder layer on anode conductive layer;
18) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [17] and all around glass enclose frame [18] and be assembled together, and getter [19] is put in the middle of the cavity, fix with glass powder with low melting point;
19) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4. the manufacture craft of the flat-panel monitor of ring-gate modulated valley shape cathode construction according to claim 3 is characterized in that: described step 16 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5. the manufacture craft of the flat-panel monitor of ring-gate modulated valley shape cathode construction according to claim 3 is characterized in that: described step 17 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6. the manufacture craft of the flat-panel monitor of ring-gate modulated valley shape cathode construction according to claim 3 is characterized in that: the device that described step 19 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; Carry out device exhaust, sealed-off row on the platform, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CN1413353A (en) * | 1999-12-31 | 2003-04-23 | 尖端设备公司 | Segmented grid drive for dynamic electron beam shape correction in field emission cathodes |
| CN1909166A (en) * | 2006-08-02 | 2007-02-07 | 中原工学院 | Coaxial multi-loop column type cathode array structural panel display device and its production technique |
| CN1917133A (en) * | 2006-08-02 | 2007-02-21 | 中原工学院 | Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique |
-
2007
- 2007-06-20 CN CN200710054628XA patent/CN101071741B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1413353A (en) * | 1999-12-31 | 2003-04-23 | 尖端设备公司 | Segmented grid drive for dynamic electron beam shape correction in field emission cathodes |
| CN1909166A (en) * | 2006-08-02 | 2007-02-07 | 中原工学院 | Coaxial multi-loop column type cathode array structural panel display device and its production technique |
| CN1917133A (en) * | 2006-08-02 | 2007-02-21 | 中原工学院 | Grid controlled flat panel display in circular ring, tip shaped cathode type emission structure, and fabrication technique |
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| CN101071741A (en) | 2007-11-14 |
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