CN100487849C - Transversing cathode emitting structural panel display device and its production technique - Google Patents
Transversing cathode emitting structural panel display device and its production technique Download PDFInfo
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Abstract
The invention relates to a plate display in transverse cathode emission structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and transverse cathode emission structure are arranged on the cathode glass panel; the carbon nanometer tube cathode is transverse, the grid is at the side of cathode to control the electron emission of cathode to improve the electron emission efficiency and reduce the working voltage, with lower cost and simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, Electronics Science and Technology field, vacuum science and technical field, integrated circuit science and technology field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to a kind of flat-panel monitor and manufacture craft thereof of transversing cathode emitting structural.
Background technology
Display device is a kind of crucial man-machine communication interface, and along with fast development of information technology, people have also proposed more and more higher, more and more stricter requirement for Display Technique and display device.Carbon nano-tube has little tip curvature radius, high aspect rate, and high mechanical strength, alive outside effect can be launched a large amount of electronics down, and this has caused numerous scientific research personnel's great attention already.And utilize the field-emission plane display of carbon nano-tube as cathode material, has high definition, characteristics such as high-resolution, high image quality and suitable warm area are wide, realized the real panelized of device, make display device become thinner, brighter, may make technical field of flat panel display generation great change.
In the preparation technology of carbon nanotube cathod, roughly can be divided into two kinds of methods, i.e. direct growth method and grafting.The carbon nanotube density height that the direct growth method is prepared, autoelectronic current is big, has the better field emission characteristics of performance, is that grafting is incomparable, but be subjected to the restriction of factors such as backing material, growth temperature, be subjected to certain limitation in use.The preparation technology of grafting is simple, can carry out large-area element manufacturing, be not subjected to the restriction of backing material, but the emitting performance of prepared carbon nano-tube is less better.Launch in the process of a large amount of electronics at carbon nanotube cathod, not all carbon nanotube cathod can both emitting electrons, but the carbon nano-tube electrons emitted that is positioned at marginal position is more, the carbon nano-tube electrons emitted that is positioned at interior location will be lacked, even in some carbon nano-tube of middle position of negative electrode emitting electrons not, the phenomenon that a large amount of electronics can be launched in this just comparatively unique edge needs to make full use of this phenomenon in the manufacturing process of practical devices.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of whole flat-panel display device; When can carrying out the making of large area display spare, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, flat-panel monitor that has transversing cathode emitting structural and manufacture craft thereof simple in structure.
The object of the present invention is achieved like this: a kind of flat-panel monitor of transversing cathode emitting structural, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have grid, carbon nanotube cathod and transversing cathode emitting structural on cathode glass faceplate.
The backing material of described transversing cathode emitting structural is glass, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the grid lead layer; Silicon dioxide layer after the etching on the cathode glass faceplate will be divided into two parts, promptly grid increase the layer and negative electrode increase layer; Grid increase the layer be positioned at the grid lead layer above, negative electrode increase the layer be positioned at grid increase the layer side; It is identical with the height that negative electrode increases layer that grid increases layer; Doped polysilicon layer of existence on grid increases layer, the doped polysilicon layer after the etching forms grid layer; Grid layer covers upper surface and the side that grid increases layer, and and the grid lead layer of bottom contact; Silicon dioxide layer after the etching above the grid layer forms the grid cover layer; The grid cover layer is wanted complete cover grid layer, comprises the top and the side of grid layer; Negative electrode increases metal level of top existence of layer, and the metal level after the etching forms cathode conductive layer; The cathode conductive layer major part all be positioned at negative electrode increase layer above, but its front end is a vacant state, exceed the part negative electrode and increase layer; Have the another one metal level on the front end overhanging portion of cathode conductive layer, the metal level after the etching forms catalyst layer; Silicon dioxide layer after the etching above the cathode conductive layer forms cathode coating; Cathode coating will cover and be positioned at negative electrode and increase whole cathode conductive layers above the layer, but must not cover the front end overhanging portion and the catalyst layer of cathode conductive layer; Utilize catalyst layer to prepare carbon nano-tube.
The fixed position of described transversing cathode emitting structural is for being fixed on the cathode glass faceplate, and grid and negative electrode are integrated together, grid is positioned at the side direction of negative electrode, controlling the electronics emission of negative electrode, the grid lead layer is metal gold, silver, tin, chromium, nickel, cobalt, aluminium, the doping type of grid layer is the p type or is the n type that cathode conductive layer is metal gold, silver, tin, molybdenum, chromium, and catalyst layer is metallic iron, cobalt, nickel.
A kind of manufacture craft of flat-panel monitor of transversing cathode emitting structural, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of grid lead layer: evaporation last layer metal level on cathode glass faceplate forms the grid lead layer after the etching;
3) grid increases the making that layer and negative electrode increase layer: prepare a silicon dioxide layer on cathode glass faceplate, the silicon dioxide layer after the etching will be divided into two parts, and promptly grid increases layer and negative electrode increases layer; Grid increase the layer be positioned at the grid lead layer above, negative electrode increase the layer be positioned at grid increase the layer side; It is identical with the height that negative electrode increases layer that grid increases layer;
4) making of grid layer: on grid increases layer, prepare a n type doped polysilicon layer, form grid layer after the etching; N type doped polysilicon layer covers upper surface and the side that grid increases layer, and and the grid lead layer of bottom contact;
5) the tectal making of grid: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching; The grid cover layer is wanted complete cover grid layer, comprises the top and the side of grid layer;
6) making of cathode conductive layer: on negative electrode increases layer, prepare a metal level, form cathode conductive layer after the etching; The cathode conductive layer major part all be positioned at negative electrode increase layer above, but its front end is a vacant state, exceed the part negative electrode and increase layer;
7) making of catalyst layer: on the front end overhanging portion of cathode conductive layer, prepare a metal level, form catalyst layer after the etching;
8) making of cathode coating: on cathode conductive layer, prepare a silicon dioxide layer, form cathode coating after the etching; Cathode coating after the etching will cover and be positioned at negative electrode and increase whole cathode conductive layers above the layer, but must not cover the front end overhanging portion and the catalyst layer of cathode conductive layer;
9) cleaning surfaces of transversing cathode emitting structural is handled: clean is carried out on the surface to whole transversing cathode emitting structural, removes impurity and dust;
10) preparation of carbon nano-tube: utilize catalyst layer to prepare carbon nano-tube;
11) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
13) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [15] and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 13 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 14 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
The device that described step 16 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, the carbon nanotube cathod in described transversing cathode emitting structural is laterally to place.When after applying appropriate voltage on the grid, because the distance between grid and the carbon nanotube cathod is very near, grid voltage can form powerful electric field strength on the top of carbon nanotube cathod, force carbon nanotube cathod to launch a large amount of electronics; Owing to be subjected to the high-tension influence of anode, turnover appears during flying to the way of grid from carbon nanotube cathod institute electrons emitted, transfer to fly to anode impact fluorescence bisque and send visible light with higher speed.Like this, just greatly reduce grid current, further improved the display brightness of device;
Secondly, the fore-end of the cathode conductive layer in described transversing cathode emitting structural is unsettled, and this just allows some leeway for the growth carbon nanotube cathod; Simultaneously, by the length of control cathode conductive layer overhanging portion, also can finely tune the distance between grid and the carbon nanotube cathod;
The 3rd, in described transversing cathode emitting structural, on grid layer, prepared the grid cover layer, avoid of the influence of other impurity first to grid, second also make grid and carbon nanotube cathod keep apart mutually, avoid the appearance of short circuit phenomenon between the two, improved the power that is made into of device;
In addition, in described transversing cathode emitting structural, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of transversing cathode emitting structural;
Fig. 2 has provided the structural representation of overhanging portion negative electrode;
Fig. 3 has provided the transversary schematic diagram of transversing cathode emitting structural;
Fig. 4 has provided and has had structural representation transversing cathode emitting structural, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has transversing cathode emitting structural, comprise by cathode glass faceplate 1, anode glass panel 11 and all around glass enclose the sealed vacuum chamber that frame 16 is constituted; Anode conductive layer 12 and the phosphor powder layer 14 of preparation on anode conductive layer are arranged on the anode glass panel; Grid 4, carbon nano-tube 10 negative electrodes and transversing cathode emitting structural are arranged on cathode glass faceplate; Supporting wall structure 15 between anode glass panel and cathode glass faceplate and getter subsidiary component 17.
Described transversing cathode emitting structural comprises that cathode glass faceplate 1, grid lead layer 2, grid increase layer 3, grid layer 4, grid cover layer 5, negative electrode increase layer 6, cathode conductive layer 7, catalyst layer 8, cathode coating 9 and carbon nano-tube 10 parts.
The backing material of described transversing cathode emitting structural is a glass, and as soda-lime glass, Pyrex, just cathode glass faceplate 1; Metal level after the etching on the cathode glass faceplate forms grid lead layer 2; Silicon dioxide layer after the etching on the cathode glass faceplate will be divided into two parts, promptly grid increase the layer 3 and negative electrode increase the layer 6; Grid increase the layer be positioned at the grid lead layer above, negative electrode increase the layer be positioned at grid increase the layer side; It is identical with the height that negative electrode increases layer that grid increases layer; Doped polysilicon layer of existence on grid increases layer, the doped polysilicon layer after the etching forms grid layer 4; Grid layer covers upper surface and the side that grid increases layer, and and the grid lead layer of bottom contact; Silicon dioxide layer after the etching above the grid layer forms grid cover layer 5; The grid cover layer is wanted complete cover grid layer, comprises the top and the side of grid layer; Negative electrode increases metal level of top existence of layer, and the metal level after the etching forms cathode conductive layer 7; The cathode conductive layer major part all be positioned at negative electrode increase layer above, but its front end is a vacant state, exceed the part negative electrode and increase layer; Have the another one metal level on the front end overhanging portion of cathode conductive layer, the metal level after the etching forms catalyst layer 8; Silicon dioxide layer after the etching above the cathode conductive layer forms cathode coating 9; Cathode coating will cover and be positioned at negative electrode and increase whole cathode conductive layers above the layer, but must not cover the front end overhanging portion and the catalyst layer of cathode conductive layer; Utilize catalyst layer to prepare carbon nano-tube 10.
The fixed position of described transversing cathode emitting structural is for being fixed on the cathode glass faceplate, and grid and negative electrode be integrated together, and grid is positioned at the side direction of negative electrode, is controlling the electronics emission of negative electrode.The grid lead layer can be metallic gold, silver, tin, chromium, nickel, cobalt, aluminium.The doping type of grid layer can be the p type, also can be the n type.Cathode conductive layer can be metallic gold, silver, tin, molybdenum, chromium.Catalyst layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of transversing cathode emitting structural, its manufacture craft is as follows:
1) making of cathode glass faceplate 1: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of grid lead layer 2: evaporation last layer chromium layer on cathode glass faceplate forms the grid lead layer after the etching;
3) grid increases layer 3 and negative electrode increases layer 6 making: prepare a silicon dioxide layer on cathode glass faceplate, the silicon dioxide layer after the etching will be divided into two parts, and promptly grid increases layer and negative electrode increases layer; Grid increase the layer be positioned at the grid lead layer above, negative electrode increase the layer be positioned at grid increase the layer side; It is identical with the height that negative electrode increases layer that grid increases layer;
4) making of grid layer 4: on grid increases layer, prepare a n type doped polysilicon layer, form grid layer after the etching; N type doped polysilicon layer covers upper surface and the side that grid increases layer, and and the grid lead layer of bottom contact;
5) making of grid cover layer 5: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching; The grid cover layer is wanted complete cover grid layer, comprises the top and the side of grid layer;
6) making of cathode conductive layer 7: on negative electrode increases layer, prepare a molybdenum layer, form cathode conductive layer after the etching; The cathode conductive layer major part all be positioned at negative electrode increase layer above, but its front end is a vacant state, exceed the part negative electrode and increase layer;
7) making of catalyst layer 8: on the front end overhanging portion of cathode conductive layer, prepare a nickel dam, form catalyst layer after the etching;
8) making of cathode coating 9: on cathode conductive layer, prepare a silicon dioxide layer, form cathode coating after the etching; Cathode coating after the etching will cover and be positioned at negative electrode and increase whole cathode conductive layers above the layer, but must not cover the front end overhanging portion and the catalyst layer of cathode conductive layer;
9) cleaning surfaces of transversing cathode emitting structural is handled: clean is carried out on the surface to whole transversing cathode emitting structural, removes impurity and dust;
10) preparation of carbon nano-tube 10: utilize catalyst layer to prepare carbon nano-tube;
11) making of anode glass panel 11: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer 12: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
13) making of insulation paste layer 13: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer 14: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure 15 and all around glass enclose frame 16 and be assembled together, and getter 17 is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 13 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 14 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 16 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor of transversing cathode emitting structural, comprise by cathode glass faceplate [1], anode glass panel [11] and all around glass enclose the sealed vacuum chamber that frame [16] is constituted; Anode conductive layer [12] and the phosphor powder layer [14] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [15] and getter subsidiary component [17] is characterized in that:
Grid [4], carbon nano-tube [10] negative electrode and transversing cathode emitting structural are arranged on cathode glass faceplate;
The backing material of described transversing cathode emitting structural is a glass, just cathode glass faceplate [1]; Metal level after the etching on the cathode glass faceplate forms grid lead layer [2]; Silicon dioxide layer after the etching on the cathode glass faceplate will be divided into two parts, and promptly grid increases layer [3] and negative electrode and increases layer [6]; Grid increase the layer be positioned at the grid lead layer above, negative electrode increase the layer be positioned at grid increase the layer side; It is identical with the height that negative electrode increases layer that grid increases layer; Doped polysilicon layer of existence on grid increases layer, the doped polysilicon layer after the etching forms grid layer [4]; Grid layer covers upper surface and the side that grid increases layer, and and the grid lead layer of bottom contact; Silicon dioxide layer after the etching above the grid layer forms grid cover layer [5]; The grid cover layer is wanted complete cover grid layer, comprises the top and the side of grid layer; Negative electrode increases metal level of top existence of layer, and the metal level after the etching forms cathode conductive layer [7]; The cathode conductive layer major part all be positioned at negative electrode increase layer above, but its front end is a vacant state, exceed the part negative electrode and increase layer; Have the another one metal level on the front end overhanging portion of cathode conductive layer, the metal level after the etching forms catalyst layer [8]; Silicon dioxide layer after the etching above the cathode conductive layer forms cathode coating [9]; Cathode coating will cover and be positioned at negative electrode and increase whole cathode conductive layers above the layer, but must not cover the front end overhanging portion and the catalyst layer of cathode conductive layer; Utilize catalyst layer to prepare carbon nano-tube [10].
2, the flat-panel monitor of transversing cathode emitting structural according to claim 1, it is characterized in that: the fixed position of described transversing cathode emitting structural is for being fixed on the cathode glass faceplate, and grid and negative electrode are integrated together, grid is positioned at the side direction of negative electrode, controlling the electronics emission of negative electrode, the grid lead layer is one of metal gold, silver, tin, chromium, nickel, cobalt, aluminium, the doping type of grid layer is the p type or is the n type, cathode conductive layer is one of metal gold, silver, tin, molybdenum, chromium, and catalyst layer is one of metallic iron, cobalt, nickel.
3, a kind of manufacture craft of flat-panel monitor of transversing cathode emitting structural is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of grid lead layer [2]: evaporation last layer metal level on cathode glass faceplate forms the grid lead layer after the etching;
3) grid increases the making that layer [3] and negative electrode increase layer [6]: prepare a silicon dioxide layer on cathode glass faceplate, the silicon dioxide layer after the etching will be divided into two parts, and promptly grid increases layer and negative electrode increases layer; Grid increase the layer be positioned at the grid lead layer above, negative electrode increase the layer be positioned at grid increase the layer side; It is identical with the height that negative electrode increases layer that grid increases layer;
4) making of grid layer [4]: on grid increases layer, prepare a n type doped polysilicon layer, form grid layer after the etching; N type doped polysilicon layer covers upper surface and the side that grid increases layer, and and the grid lead layer of bottom contact;
5) making of grid cover layer [6]: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching; The grid cover layer is wanted complete cover grid layer, comprises the top and the side of grid layer;
6) making of cathode conductive layer [7]: on negative electrode increases layer, prepare a metal level, form cathode conductive layer after the etching; The cathode conductive layer major part all be positioned at negative electrode increase layer above, but its front end is a vacant state, exceed the part negative electrode and increase layer;
7) making of catalyst layer [8]: on the front end overhanging portion of cathode conductive layer, prepare a metal level, form catalyst layer after the etching;
8) making of cathode coating [9]: on cathode conductive layer, prepare a silicon dioxide layer, form cathode coating after the etching; Cathode coating after the etching will cover and be positioned at negative electrode and increase whole cathode conductive layers above the layer, but must not cover the front end overhanging portion and the catalyst layer of cathode conductive layer;
9) cleaning surfaces of transversing cathode emitting structural is handled: clean is carried out on the surface to whole transversing cathode emitting structural, removes impurity and dust;
10) preparation of carbon nano-tube [10]: utilize catalyst layer to prepare carbon nano-tube;
11) making of anode glass panel [11]: whole plate glass is carried out scribing, produce the anode glass panel;
12) making of anode conductive layer [12]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
13) making of insulation paste layer [13]: at the non-display area printing insulation paste layer of anode conductive layer;
14) making of phosphor powder layer [14]: the viewing area printing phosphor powder layer on anode conductive layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [15] and all around glass enclose frame [16] and be assembled together, and getter [17] is put in the middle of the cavity, fix with glass powder with low melting point;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of transversing cathode emitting structural according to claim 3 is characterized in that: described step 13 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of transversing cathode emitting structural according to claim 3 is characterized in that: described step 14 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of transversing cathode emitting structural according to claim 3 is characterized in that: the device that described step 16 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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