CN100555539C - The flat-panel monitor of mountain peak type cathode array emitting structural and manufacture craft thereof - Google Patents
The flat-panel monitor of mountain peak type cathode array emitting structural and manufacture craft thereof Download PDFInfo
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- CN100555539C CN100555539C CNB2006100485154A CN200610048515A CN100555539C CN 100555539 C CN100555539 C CN 100555539C CN B2006100485154 A CNB2006100485154 A CN B2006100485154A CN 200610048515 A CN200610048515 A CN 200610048515A CN 100555539 C CN100555539 C CN 100555539C
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Abstract
The present invention relates to a kind of flat-panel monitor and manufacture craft thereof of mountain peak type cathode array emitting structural, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component; Carbon nano-tube, control grid and mountain peak type cathode array emitting structural are arranged on cathode glass faceplate; The combined with cathode marginal position is launched the field emission characteristics of a large amount of electronics, can further increase the surface field intensity on carbon nano-tube top, improve its electronic transmitting efficiency, improve the image quality of device, have that manufacturing process is reliable and stable, manufacture craft is simple, cost of manufacture is cheap, advantage of simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, Electronics Science and Technology field, vacuum science and technical field, integrated circuit science and technology field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor of mountain peak type cathode array emitting structural and manufacture craft thereof.
Background technology
Carbon nano-tube has little tip curvature radius, and high aspect rate and good physicochemical characteristics have caused showing great attention to of numerous scientific research personnel already.Carbon nano-tube can be launched a large amount of electronics under the alive outside effect, forms the field emission phenomenon.The flat-panel monitor that utilizes the field emission principle of carbon nano-tube and make is a kind of novel display device, has characteristics such as high definition, high brightness, high-resolution and suitable warm area be wide, and it is used more and more widely.Flat-panel display device also is a kind of crucial man-machine communication's instrument, from the display floater of instrument and meter, to the display screen of high-end sci-tech product notebook computer, is at every moment bringing into play irreplaceable effect.
In the field emission flat-panel display of three-stage structure, when after applying appropriate voltage on the grid, will form powerful electric field strength on the top of carbon nanotube cathod, force the carbon nano-tube emitting electrons; But because the residing position of carbon nanotube cathod difference, formed electric field strength is difference to some extent, also just caused not all carbon nanotube cathod to launch uniformly simultaneously, the carbon nano-tube electrons emitted that is positioned at the cathode edge position is maximum, being positioned at negative electrode middle position electrons emitted then will lack relatively, perhaps emitting electrons not, this is the marginal position phenomenon of launching a large amount of electronics just.For the researcher, in the process of the design of device architecture and element manufacturing, just need consider that these actual conditions are used, this is a considerable aspect.In addition, in the preparation process of carbon nanotube cathod, the carbon nanotube density height that the direct growth method is prepared, autoelectronic current is big, has the better electron emission characteristic of performance, also will take in actual applications.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of whole flat-panel display device; When can carrying out the making of large area display spare, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of mountain peak type cathode array emitting structural simple in structure.
The object of the present invention is achieved like this: a kind of flat-panel monitor of mountain peak type cathode array emitting structural, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have carbon nano-tube, control grid and mountain peak type cathode array emitting structural on cathode glass faceplate.
The backing material of described mountain peak type cathode array emitting structural is glass, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the cathode leg layer; Silicon dioxide layer after the etching on the cathode glass faceplate forms dielectric isolation layer; There is circular port in the centre of dielectric isolation layer, need expose the cathode leg layer of bottom; Silicon dioxide layer after the etching of dielectric isolation layer side forms first sacrifice layer; The lower surface of first sacrifice layer presents one 1/4th ellipse, exposes the cathode leg layer of bottom; Doped polysilicon layer after the etching of the first sacrifice layer side forms outside negative electrode and increases layer; Bottom and cathode leg layer that outside negative electrode increases layer contact, and last plane will be lower than the last plane of dielectric isolation layer, sees on the vertical structure to present a circular pyramidal structure; The silicon dioxide layer that outside negative electrode increases after the etching of layer side forms second sacrifice layer; Doped polysilicon layer after the side etching of second sacrifice layer forms inboard negative electrode and increases layer; It is equal that inboard negative electrode increases the last plane of the last plane of layer and dielectric isolation layer, its lower surface and cathode leg layer contact, see on the vertical structure to present a circular pyramidal structure, be positioned at the inside that outside negative electrode increases layer, but plane to be higher than the last plane that outside negative electrode increases layer on it; Etching is removed first sacrifice layer and second sacrifice layer; Metal level after the etching above the dielectric isolation layer forms grid layer; The grid layer major part all be positioned at dielectric isolation layer above, but its fore-end will stretch to the inboard of circular port, presents a kind of vacant state; Silicon dioxide layer after the etching above the grid layer forms the grid cover layer; The grid cover layer will cover whole grid layers, comprises the grid layer of front end overhanging portion; Outside negative electrode increases the metal level formation catalyst layer after the top etching that layer and inboard negative electrode increase layer; Preparation has carbon nano-tube on catalyst layer.
The fixed position of described mountain peak type cathode array emitting structural is for being fixed on the cathode glass faceplate, grid and negative electrode are integrated together, the cathode leg layer is metal gold, silver, aluminium, chromium, molybdenum, tin, the doping type that outside negative electrode increases layer is the p type or is the n type, the doping type that inboard negative electrode increases layer is the p type or is the n type, but its doping type will with outside negative electrode increase the layer doping type identical, grid layer is metal gold, silver, tin, aluminium, chromium, molybdenum, and catalyst layer is metallic iron, cobalt, nickel.
A kind of manufacture craft of flat-panel monitor of mountain peak type cathode array emitting structural is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer: evaporation layer of metal layer on cathode glass faceplate forms the cathode leg layer after the etching;
3) making of dielectric isolation layer: on cathode glass faceplate, produce a silicon dioxide layer once more, form dielectric isolation layer after the etching; There is a circular port in the middle of the dielectric isolation layer, need exposes the cathode leg layer of bottom;
4) negative electrode increases the making of layer outside: the n type doped polysilicon layer after the etching of the first sacrifice layer side forms outside negative electrode and increases layer;
5) inboard negative electrode increases the making of layer: the n type doped polysilicon layer after the side etching of second sacrifice layer forms inboard negative electrode and increases layer;
6) removal of first sacrifice layer and second sacrifice layer: etching is removed first sacrifice layer and second sacrifice layer; Retaining inboard negative electrode, to increase the basic configuration that layer and outside negative electrode increase layer motionless;
7) making of grid: on dielectric isolation layer, prepare a metal level, form grid after the etching; The grid layer major part all be positioned at dielectric isolation layer above, but its fore-end will stretch to the inboard of circular port, presents a kind of vacant state;
8) the tectal making of grid: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching; The grid cover layer will cover whole grid layers, comprises the grid layer of front end overhanging portion;
9) making of catalyst layer: increase the top that layer and inboard negative electrode increase layer at outside negative electrode and prepare a metal level, form catalyst layer after the etching;
10) cleaning surfaces of mountain peak type cathode array emitting structural is handled: clean is carried out on the surface to mountain peak type cathode array emitting structural, removes impurity and dust;
11) preparation of carbon nano-tube: utilize catalyst layer to prepare carbon nano-tube;
12) making of anode glass panel: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 4 is specially the side of the dielectric isolation layer in circular port and prepares a silicon dioxide layer, forms first sacrifice layer after the etching; The lower surface of first sacrifice layer presents one 1/4th ellipse, exposes the cathode leg layer of bottom; Prepare a n type doped polysilicon layer in the side of first sacrifice layer, form outside negative electrode after the etching and increase layer; Bottom and cathode leg layer that outside negative electrode increases layer contact, and last plane will be lower than the last plane of dielectric isolation layer, sees on the vertical structure to present a circular pyramidal structure.
Described step 5 is specially in the side that outside negative electrode increases layer and prepares a silicon dioxide layer, forms second sacrifice layer after the etching; Prepare a n type doped polysilicon layer in the side of second sacrifice layer once more, form inboard negative electrode after the etching and increase layer; It is equal that inboard negative electrode increases the last plane of the last plane of layer and dielectric isolation layer, its lower surface and cathode leg layer contact, see on the vertical structure to present a circular pyramidal structure, be positioned at the inside that outside negative electrode increases layer, but plane to be higher than the last plane that outside negative electrode increases layer on it.
Described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
The device that described step 16 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described mountain peak type cathode array emitting structural, grid can effectively be controlled the electronics emission of carbon nanotube cathod.When after applying appropriate voltage on the grid, will form powerful electric field strength on the top of carbon nano-tube, force carbon nano-tube to launch a large amount of electronics.Because in mountain peak type cathode array emitting structural, carbon nanotube cathod is in outside negative electrode respectively and increases the top that layer and inboard negative electrode increase layer, and the cone structure that presents a kind of point point, so just further strengthen the electric field strength on carbon nano-tube top, thereby can reduce working voltage of device effectively; Because in the mountain peak type cathode array structure, successively made that outside negative electrode increases layer and inboard negative electrode increases layer two an annular cone structure, that is to say that two circular carbon nanotube cathods exist, also increase effective emission area of carbon nanotube cathod so simultaneously, can further improve the display brightness of integral device;
Secondly, in described mountain peak type cathode array emitting structural, on grid layer, make the grid cover layer again, grid structure has been surrounded fully, wherein also comprised the grid layer of front end overhanging portion.Like this, the generation that prevents short circuit phenomenon between grid and the carbon nanotube cathod that can be favourable can also further reduce the distance between grid and the carbon nanotube cathod simultaneously, thereby reduces working voltage of device;
The 3rd, in described mountain peak type cathode array emitting structural, utilize n type doped polysilicon layer made respectively inboard negative electrode increase the layer and outside negative electrode increase layer; Like this, utilize the characteristic of semiconductor of n type doped polysilicon layer, the target electric current carries out self-control effectively, avoids the appearance of the excessive phenomenon of cathode current;
The 4th, in described mountain peak type cathode array emitting structural, it is different with the height that inboard negative electrode increases the last plane making of layer that outside negative electrode is increased layer, wherein inboard negative electrode increase the layer height higher, the height that outside negative electrode increases layer is lower, this also just means, the height of inside and outside two carbon nanotube cathods is different, like this, in device fabrication processes, just can guarantee that two carbon nanotube cathods are approaching to grid from different directions respectively, both reduced the distance between the two, reduce the operating voltage of device, also effectively increased the emission area of carbon nanotube cathod simultaneously.
In addition, in described mountain peak type cathode array emitting structural, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of mountain peak type cathode array emitting structural;
Fig. 2 has provided the transversary schematic diagram of mountain peak type cathode array emitting structural;
Fig. 3 has provided and has had structural representation mountain peak type cathode array emitting structural, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has mountain peak type cathode array emitting structural, comprise by anode glass panel 10, cathode glass faceplate 1 and all around glass enclose the sealed vacuum chamber that frame 15 is constituted; Carbon nano-tube 9, control grid 6 and mountain peak type cathode array emitting structural are arranged on cathode glass faceplate; Anode conductive layer 11 and the phosphor powder layer 13 of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure 14 between anode glass panel and cathode glass faceplate and getter subsidiary component 16.
Described mountain peak type cathode array emitting structural comprises that cathode glass faceplate 1, cathode leg layer 2, dielectric isolation layer 3, outside negative electrode increase layer 4, inboard negative electrode increases layer 5, grid 6, grid cover layer 7, catalyst layer 8 and carbon nano-tube 9 parts.
The backing material of described mountain peak type cathode array emitting structural is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the cathode leg layer; Silicon dioxide layer after the etching on the cathode glass faceplate forms dielectric isolation layer; There is circular port in the centre of dielectric isolation layer, need expose the cathode leg layer of bottom; Silicon dioxide layer after the etching of dielectric isolation layer side forms first sacrifice layer; The lower surface of first sacrifice layer presents one 1/4th ellipse, exposes the cathode leg layer of bottom; Doped polysilicon layer after the etching of the first sacrifice layer side forms outside negative electrode and increases layer; Bottom and cathode leg layer that outside negative electrode increases layer contact, and last plane will be lower than the last plane of dielectric isolation layer, sees on the vertical structure to present a circular pyramidal structure; The silicon dioxide layer that outside negative electrode increases after the etching of layer side forms second sacrifice layer; Doped polysilicon layer after the side etching of second sacrifice layer forms inboard negative electrode and increases layer; It is equal that inboard negative electrode increases the last plane of the last plane of layer and dielectric isolation layer, its lower surface and cathode leg layer contact, see on the vertical structure to present a circular pyramidal structure, be positioned at the inside that outside negative electrode increases layer, but plane to be higher than the last plane that outside negative electrode increases layer on it; Etching is removed first sacrifice layer and second sacrifice layer; Metal level after the etching above the dielectric isolation layer forms grid layer; The grid layer major part all be positioned at dielectric isolation layer above, but its fore-end will stretch to the inboard of circular port, presents a kind of vacant state; Silicon dioxide layer after the etching above the grid layer forms the grid cover layer; The grid cover layer will cover whole grid layers, comprises the grid layer of front end overhanging portion; Outside negative electrode increases the metal level formation catalyst layer after the top etching that layer and inboard negative electrode increase layer; Can utilize catalyst layer to carry out the preparation of carbon nano-tube.
The fixed position of described mountain peak type cathode array emitting structural is for being fixed on the cathode glass faceplate, and grid and negative electrode are integrated together.The cathode leg layer can be metallic gold, silver, aluminium, chromium, molybdenum, tin.The doping type that outside negative electrode increases layer can be the p type, also can be the n type.The doping type that inboard negative electrode increases layer can be the p type, also can be the n type, but its doping type will to increase the doping type of layer identical with outside negative electrode.Grid layer can be metallic gold, silver, tin, aluminium, chromium, molybdenum.Catalyst layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of mountain peak type cathode array emitting structural, its manufacture craft is as follows:
1) making of cathode glass faceplate 1: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer 2: evaporation layer of metal molybdenum layer on cathode glass faceplate forms the cathode leg layer after the etching;
3) making of dielectric isolation layer 3: on cathode glass faceplate, produce a silicon dioxide layer once more, form dielectric isolation layer after the etching; There is a circular port in the middle of the dielectric isolation layer, need exposes the cathode leg layer of bottom;
4) negative electrode increases the making of layer 4 outside: the n type doped polysilicon layer after the etching of the first sacrifice layer side forms outside negative electrode and increases layer;
5) inboard negative electrode increases the making of layer 5: the n type doped polysilicon layer after the side etching of second sacrifice layer forms inboard negative electrode and increases layer;
6) removal of first sacrifice layer and second sacrifice layer: etching is removed first sacrifice layer and second sacrifice layer; Retaining inboard negative electrode, to increase the basic configuration that layer and outside negative electrode increase layer motionless;
7) making of grid 6: on dielectric isolation layer, prepare a metallic chromium layer, form grid after the etching; The grid layer major part all be positioned at dielectric isolation layer above, but its fore-end will stretch to the inboard of circular port, presents a kind of vacant state;
8) making of grid cover layer 7: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching; The grid cover layer will cover whole grid layers, comprises the grid layer of front end overhanging portion;
9) making of catalyst layer 8: increase the top that layer and inboard negative electrode increase layer at outside negative electrode and prepare a metal nickel dam, form catalyst layer after the etching;
10) cleaning surfaces of mountain peak type cathode array emitting structural is handled: clean is carried out on the surface to mountain peak type cathode array emitting structural, removes impurity and dust;
11) preparation of carbon nano-tube 9: utilize catalyst layer to prepare carbon nano-tube;
12) making of anode glass panel 10: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer 11: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer 12: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer 13: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure 14 and all around glass enclose frame 15 and be assembled together, and getter 16 is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 4 is specially the side of the dielectric isolation layer in circular port and prepares a silicon dioxide layer, forms first sacrifice layer after the etching; The lower surface of first sacrifice layer presents one 1/4th ellipse, exposes the cathode leg layer of bottom; Prepare a n type doped polysilicon layer in the side of first sacrifice layer, form outside negative electrode after the etching and increase layer; Bottom and cathode leg layer that outside negative electrode increases layer contact, and last plane will be lower than the last plane of dielectric isolation layer, sees on the vertical structure to present a circular pyramidal structure;
Described step 5 is specially in the side that outside negative electrode increases layer and prepares a silicon dioxide layer, forms second sacrifice layer after the etching; Prepare a n type doped polysilicon layer in the side of second sacrifice layer once more, form inboard negative electrode after the etching and increase layer; It is equal that inboard negative electrode increases the last plane of the last plane of layer and dielectric isolation layer, its lower surface and cathode leg layer contact, see on the vertical structure to present a circular pyramidal structure, be positioned at the inside that outside negative electrode increases layer, but plane to be higher than the last plane that outside negative electrode increases layer on it;
Described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes;
Described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes;
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor of mountain peak type cathode array emitting structural, comprise by anode glass panel [10], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [15] is constituted; Anode conductive layer [11] and the phosphor powder layer [13] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [14] and getter subsidiary component [16] is characterized in that:
Carbon nano-tube [9], control grid [6] and mountain peak type cathode array emitting structural are arranged on cathode glass faceplate,
The backing material of described mountain peak type cathode array emitting structural is a glass, just cathode glass faceplate [1]; Metal level after the etching on the cathode glass faceplate forms cathode leg layer [2]; Silicon dioxide layer after the etching on the cathode glass faceplate forms dielectric isolation layer [3]; There is circular port in the centre of dielectric isolation layer, need expose the cathode leg layer of bottom; Silicon dioxide layer after the etching of dielectric isolation layer side forms first sacrifice layer; The lower surface of first sacrifice layer presents one 1/4th ellipse, exposes the cathode leg layer of bottom; Doped polysilicon layer after the etching of the first sacrifice layer side forms outside negative electrode and increases layer [4]; Bottom and cathode leg layer that outside negative electrode increases layer contact, and last plane will be lower than the last plane of dielectric isolation layer, sees on the vertical structure to present a circular pyramidal structure; The silicon dioxide layer that outside negative electrode increases after the etching of layer side forms second sacrifice layer; Doped polysilicon layer after the side etching of second sacrifice layer forms inboard negative electrode and increases layer [5]; It is equal that inboard negative electrode increases the last plane of the last plane of layer and dielectric isolation layer, its lower surface and cathode leg layer contact, see on the vertical structure to present a circular pyramidal structure, be positioned at the inside that outside negative electrode increases layer, but plane to be higher than the last plane that outside negative electrode increases layer on it; Etching is removed first sacrifice layer and second sacrifice layer; Metal level after the etching above the dielectric isolation layer forms grid layer [6]; The grid layer major part all be positioned at dielectric isolation layer above, but its fore-end will stretch to the inboard of circular port, presents a kind of vacant state; Silicon dioxide layer after the etching above the grid layer forms grid cover layer [7]; The grid cover layer will cover whole grid layers, comprises the grid layer of front end overhanging portion; Outside negative electrode increases the metal level formation catalyst layer [8] after the top etching that layer and inboard negative electrode increase layer; Preparation has carbon nano-tube [9] on catalyst layer.
2, the flat-panel monitor of mountain peak type cathode array emitting structural according to claim 1, it is characterized in that: the fixed position of described mountain peak type cathode array emitting structural is for being fixed on the cathode glass faceplate, grid and negative electrode are integrated together, the cathode leg layer is a metallic gold, silver, aluminium, chromium, molybdenum, one of tin, the doping type that outside negative electrode increases layer is the p type or is the n type, the doping type that inboard negative electrode increases layer is the p type or is the n type, but its doping type will with outside negative electrode increase the layer doping type identical, grid layer is a metallic gold, silver, tin, aluminium, chromium, one of molybdenum, catalyst layer are metallic iron, cobalt, one of nickel.
3, a kind of manufacture craft of flat-panel monitor of mountain peak type cathode array emitting structural is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer [2]: evaporation layer of metal layer on cathode glass faceplate forms the cathode leg layer after the etching;
3) making of dielectric isolation layer [3]: on cathode glass faceplate, produce a silicon dioxide layer once more, form dielectric isolation layer after the etching; There is a circular port in the middle of the dielectric isolation layer, need exposes the cathode leg layer of bottom;
4) outside negative electrode increases the making of layer [4]: the n type doped polysilicon layer after the etching of the first sacrifice layer side forms outside negative electrode and increases layer; Described step 4 is specially the side of the dielectric isolation layer in circular port and prepares a silicon dioxide layer, forms first sacrifice layer after the etching; The lower surface of first sacrifice layer presents one 1/4th ellipse, exposes the cathode leg layer of bottom; Prepare a n type doped polysilicon layer in the side of first sacrifice layer, form outside negative electrode after the etching and increase layer; Bottom and cathode leg layer that outside negative electrode increases layer contact, and last plane will be lower than the last plane of dielectric isolation layer, sees on the vertical structure to present a circular pyramidal structure;
5) inboard negative electrode increases the making of layer [5]: the n type doped polysilicon layer after the side etching of second sacrifice layer forms inboard negative electrode and increases layer; Described step 5 is specially in the side that outside negative electrode increases layer and prepares a silicon dioxide layer, forms second sacrifice layer after the etching; Prepare a n type doped polysilicon layer in the side of second sacrifice layer once more, form inboard negative electrode after the etching and increase layer; It is equal that inboard negative electrode increases the last plane of the last plane of layer and dielectric isolation layer, its lower surface and cathode leg layer contact, see on the vertical structure to present a circular pyramidal structure, be positioned at the inside that outside negative electrode increases layer, but plane to be higher than the last plane that outside negative electrode increases layer on it;
6) removal of first sacrifice layer and second sacrifice layer: etching is removed first sacrifice layer and second sacrifice layer; Retaining inboard negative electrode, to increase the basic configuration that layer and outside negative electrode increase layer motionless;
7) making of grid [6]: on dielectric isolation layer, prepare a metal level, form grid after the etching; The grid layer major part all be positioned at dielectric isolation layer above, but its fore-end will stretch to the inboard of circular port, presents a kind of vacant state;
8) making of grid cover layer [7]: on grid layer, prepare a silicon dioxide layer, form the grid cover layer after the etching; The grid cover layer will cover whole grid layers, comprises the grid layer of front end overhanging portion;
9) making of catalyst layer [8]: increase the top that layer and inboard negative electrode increase layer at outside negative electrode and prepare a metal level, form catalyst layer after the etching;
10) cleaning surfaces of mountain peak type cathode array emitting structural is handled: clean is carried out on the surface to mountain peak type cathode array emitting structural, removes impurity and dust;
11) preparation of carbon nano-tube [9]: utilize catalyst layer to prepare carbon nano-tube;
12) making of anode glass panel [10]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer [11]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer [12]: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer [13]: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [14] and all around glass enclose frame [15] and be assembled together, and getter [16] is put in the middle of the cavity, fix with glass powder with low melting point;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of mountain peak type cathode array emitting structural according to claim 3 is characterized in that: described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of mountain peak type cathode array emitting structural according to claim 3 is characterized in that: described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of mountain peak type cathode array emitting structural according to claim 3 is characterized in that: the device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CNB2006100485154A CN100555539C (en) | 2006-08-02 | 2006-08-02 | The flat-panel monitor of mountain peak type cathode array emitting structural and manufacture craft thereof |
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| CN100555539C true CN100555539C (en) | 2009-10-28 |
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