CN101894726A - Novel non-medium tripolar field emitter - Google Patents
Novel non-medium tripolar field emitter Download PDFInfo
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- CN101894726A CN101894726A CN 201010251052 CN201010251052A CN101894726A CN 101894726 A CN101894726 A CN 101894726A CN 201010251052 CN201010251052 CN 201010251052 CN 201010251052 A CN201010251052 A CN 201010251052A CN 101894726 A CN101894726 A CN 101894726A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/02—Electrodes other than control electrodes
- H01J2329/04—Cathode electrodes
- H01J2329/0407—Field emission cathodes
- H01J2329/041—Field emission cathodes characterised by the emitter shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/02—Electrodes other than control electrodes
- H01J2329/04—Cathode electrodes
- H01J2329/0407—Field emission cathodes
- H01J2329/0439—Field emission cathodes characterised by the emitter material
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- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The invention relates to the technical field of manufacturing electronic display devices, in particular to a novel non-medium tripolar field emitter. The field emitter comprises a cathode grid base plate and an anode base plate which are matched with each other for working. The invention is characterized in that the field emitter is in a non-medium tripolar structure; a plurality of parallel strip electrodes are arranged on the cathode grid base plate side by side; each strip electrode is formed by sequentially overlying two or more than two layers of electrodes, the bottom layer is a metallic oxide conductive film electrode, and the upper layer is of metallic or conductive metallic particle electrodes; the edge of the metallic oxide conductive film electrode are in a zigzag or rectangular structure and is provided with a field emitting material, or an electron conduction layer is arranged in a gap between the two metallic oxide conductive film electrodes; and an anode electrode and a fluorescent powder layer are arranged on the anode base plate. The field emitter not only is favor for strengthening electrode edge emission effect and electrode regulation and control effect and reducing turn-on electric fields for field emission, but also having simple manufacturing process and easy production-manufacturing.
Description
Technical field
The present invention relates to electron display device manufacturing technology field, particularly a kind of novel non-medium tripolar field emitter.
Background technology
Field-causing electron emission is a potential barrier of constraining body surface by very strong external electrical field, makes the barrier height reduction, narrowed width, and when the width of potential barrier is too narrow to when can be with the wavelength of electronics comparable, electronics penetrates potential barrier by tunnel effect and escapes into vacuum.
The sorting technique of Field Emission Display (FED) has a lot, can three utmost point FED that be called of grid be arranged simply with two utmost point FED that are called of non-grid by structure.Among two utmost point FED, anode needs high pressure realize high brightness could for the enough energy impact fluorescences of electronics powder on the one hand, anode electrode serves as modulator electrode again on the other hand, connect drive circuit and need low voltage modulated again, therefore there is the implacable contradiction between luminosity and the modulation voltage, must on the basis of two-level structure, introduce modulation grid, carry out voltage modulated, by anodic control brightness by grid.Three utmost point FED press the position difference of grid, can be divided into front gate type FED, back grid type FED and plane FED.The making of normal-gate structure is difficulty comparatively, preparation needs masking process 3-5 time, and field emission source is damaged easily in manufacturing process, grid since the positive voltage that adds makes field emission electron to beat intercepted and captured at grid and cathode emission all very sensitive to parameters such as thickness of dielectric layers, Wehnelt electrode openings.Back grid type FED is embedded in grid under the negative electrode, solved the making difficult problem of preceding grid structure, but this structure has lost the shielding action of grid antianode and has made negative electrode be subjected to ion bombardment easily, and anode voltage can not be too high, otherwise the grid regulating and controlling effect to weaken even change in quality be two utmost point FED.。Preceding grid and back grid field-emitter display all need to make cloudy gate insulation layer, and the making of large-area insulating barrier is very high to technological requirement, and the very difficult assurance of insulation property, so the device cost height is difficult for realizing the large tracts of land demonstration.Plane FED is meant that its grid and negative electrode are on the same plane, structure fabrication is simple, and cost is low, extremely is fit to large-area manufacturing and futurity industry production, but there are technical bottlenecks such as the high and dynamic modulation voltage range of cut-in voltage is narrow in conventional planar type FED, and can not carry out matrix addressing.As a kind of novel Display Technique, it also has bigger gap from the marketization.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of novel non-medium tripolar field emitter is provided, this field emission device not only helps intensifier electrode edge-emission effect, the intensifier electrode regulating and controlling effect, reduce a unlatching electric field of emission, and manufacturing process is simple, is easy to manufacture.
For achieving the above object, technical scheme of the present invention is: 1, a kind of novel non-medium tripolar field emitter, the cloudy grid base plate and the anode substrate that comprise the work of cooperatively interacting, it is characterized in that: this field emission device is the non-medium tripolar structure, be provided with a plurality of strip shaped electric poles that are parallel to each other side by side on the described cloudy grid base plate, described each strip shaped electric poles is made up of two-layer or two-layer the stack successively with top electrode, bottom is the metal conductive oxide membrane electrode, can be used as the current-limiting resistance layer, the upper strata is metal or conducting metal particles electrode, the edge of described metal conductive oxide membrane electrode is zigzag or rectangular configuration, is provided with field emmision material at the edge of described metal conductive oxide membrane electrode or the gap between two metal conductive oxide membrane electrodes is provided with electronic conductive layer; On described anode substrate, be provided with anode electrode and phosphor powder layer.
The invention has the beneficial effects as follows the edge enhancement that makes full use of electrode, the intensifier electrode regulating and controlling effect reduces a unlatching electric field of emission, thereby improves the field emission performance of non-medium tripolar type field emission device.In addition, the making that this field emission device adopts common plated film and photoetching process just can finish electrode on substrate, manufacturing process is simple, it greatly reduces the complexity and the difficulty of technology, not only be easy to produce but also low cost of manufacture, extremely be fit to large-area manufacturing and futurity industry production, have wide market application prospect.
Description of drawings
Fig. 1 is the structural representation of novel non-medium tripolar field emitter of the present invention.
Fig. 2 is the cathode construction schematic diagram (electrode edge is a laciniation) of the novel non-medium tripolar field emitter in the embodiment of the invention one.
Fig. 3 is and the corresponding cathode construction schematic diagram with novel non-medium tripolar field emitter of regulating and controlling effect of Fig. 2.
Fig. 4 is the cross sectional representation with the cathode construction of the corresponding novel non-medium tripolar field emitter of Fig. 2.
Fig. 5 is the cathode construction schematic diagram (electrode edge is rectangular-shaped structure) of the novel non-medium tripolar field emitter in the embodiment of the invention two.
Fig. 6 is and the corresponding cathode construction schematic diagram with novel non-medium tripolar field emitter of regulating and controlling effect of Fig. 5.
Fig. 7 is the cross sectional representation with the cathode construction of the corresponding novel non-medium tripolar field emitter of Fig. 5.
Fig. 8 is for having the cathode construction schematic diagram (electrode edge is a rectangular configuration) of the novel non-medium tripolar field emitter of conductive film in the embodiment of the invention three.
Fig. 9 is for having the cathode construction schematic diagram (electrode edge is a laciniation) of the novel non-medium tripolar field emitter of conductive film in the embodiment of the invention three.
Figure 10 for the cross sectional representation (edge does not have field emmision material) of the cathode construction of the corresponding novel non-medium tripolar field emitter of Fig. 8.
Figure 11 for the cross sectional representation (edge is provided with field emmision material) of the cathode construction of the corresponding novel non-medium tripolar field emitter of Fig. 8.
In the accompanying drawing, the main element description of symbols is as follows:
11,21,31,41: cloudy grid base plate.
12,22,32,42: underlying metal oxide electroconductive film electrode.
13,23,33,43: upper strata metal or conducting metal particles electrode.
14,24,34: field emmision material.
44: electronic conductive layer.
15,25,35,45: zigzag or rectangular configuration.
26,36,46: the gap between the electrode.
16: anode substrate.
The 17:ITO film.
18: phosphor powder layer.
Embodiment
Novel non-medium tripolar field emitter of the present invention, the cloudy grid base plate and the anode substrate that comprise the work of cooperatively interacting, this field emission device is the non-medium tripolar structure, be provided with a plurality of strip shaped electric poles that are parallel to each other side by side on the described cloudy grid base plate, described each strip shaped electric poles is made up of two-layer or two-layer the stack successively with top electrode, bottom is the metal conductive oxide membrane electrode, can be used as the current-limiting resistance layer, the upper strata is metal or conducting metal particles electrode, the edge of described metal conductive oxide membrane electrode is zigzag or rectangular configuration, is provided with field emmision material at the edge of described metal conductive oxide membrane electrode or the gap between two metal conductive oxide membrane electrodes is provided with electronic conductive layer; On described anode substrate, be provided with anode electrode and phosphor powder layer.
The present invention adopts silk screen print method, electrophoretic deposition, chemical vapour deposition technique or physical vaporous deposition at the edge of described metal conductive oxide membrane electrode field emmision material to be set or the gap between two metal conductive oxide membrane electrodes is provided with electronic conductive layer.The field emission body material can be single the kind or two kinds and above micro-nano material, selects CNT, C film or SnO with good emitting performance for use
2, ZnO, Bi
2O
3Deng metal oxide nano-wire, its particle scale is 1nm-10--m; Electrically conductive material is conductive materials such as Cu, Ag, Au, Pt, Pd, Au, Zn.
In the present invention, the metal electrode that is used to make described strip shaped electric poles upper strata adopts vacuum coating technology to combine with photoetching technique and makes, and the conducting metal particles electrode employing screen printing technique that is used to make described strip shaped electric poles upper strata is made.
The manufactured materials of above-mentioned metal conductive oxide membrane electrode comprises the oxide of one or both and above those element combinations thereof in the oxide of Sn, Zn with conductivity, In, Sb, Bi, Cd element, and electrode width is (10-1000) μ m.
The manufactured materials of above-mentioned metal or conducting metal particles electrode comprises that film conductive electrode material is the single thin film of Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, Ti or by multi-layer compound film, alloy firm or the conductive metal layer of its combination in any, electrode width is (5-500) μ m.
The span of spacing is (0.01-100) μ m between the adjacent strip shaped electric poles.
The present invention is described in further detail below in conjunction with drawings and the specific embodiments.
Embodiment one
Please refer to Fig. 2-4, when making minus plate, at first provide substrate (21), substrate (21) material for example is a glass.With 100*100mm panel technology is example, with the face glass of 100*100mm as cloudy grid base plate.Parallel electrodes is the film conductive electrode that combines made with coating technique, photoetching technique, and its thickness is 100-1000 nm.The electrode bottom is metal conductive oxide film (22), it is made in conjunction with coating technique and photoetching technique, at first adopt magnetron sputtering method to prepare the layer of metal oxide electroconductive film at substrate (21), adopt photoetching technique again, through overexposure, development, etching, move back glue, that formation is parallel to each other, extraction pole is respectively at the electrode at two ends, and electrode edge is a laciniation, shown in Fig. 2-4(25), its electrode width is 100-200 μ m, and the gap width (26) between its adjacent outstanding laciniation is for being 10-100 μ m.Again the substrate that forms pattern (21) is cleaned up, present embodiment is selected the top layer (23) of Cr/Cu/Ag/Cu/Cr composite metal film as electrode for use, adopt direct current magnetron sputtering process on substrate (21) surface sputtering sedimentation Cr film successively, the Cu film, the Ag film, the Cu film, the Cr film, form the Cr/Cu/Ag/Cu/Cr composite metal film, utilize photoetching technique then, at metal conductive oxide membrane electrode intermediate fabrication electrode mask layer, the etching composite metal film, just prepare the Cr/Cu/Ag/Cu/Cr composite metal film electrode on the metal conductive oxide membrane electrode, its electrode width is more smaller than bottom electrode width, is 50-100--m.
At last, the jagged edge at electrode underlying metal oxide electroconductive film is provided with field emmision material (24).The material of field emission body is single the kind or two kinds and above nano material, selects CNT, C film or SnO with good emitting performance for use
2, ZnO, Bi
2O
3Deng metal oxide nano-wire, its particle scale is 1nm-10--m.In the present embodiment with carbon nano-tube (CNT) as field emission body, adopt electrophoretic deposition that the CNT nano material is transferred to electrode edge.At first carbon nano-tube and ethyl cellulose, terpinol, trace mineral supplement and isopropyl alcohol are made into and are uniformly dispersed and stable CNT electrophoresis liquid, afterwards, adopt direct voltage source or pulse voltage source at electrode edge electrophoretic deposition carbon nanotube material, control the amount of the CNT material that is deposited on the electrode edge by electrophoresis parameters such as control electrophoretic liquid concentration, electrophoretic voltage, electrophoretic current, electrophoresis times.After electrophoresis is finished, carry out sintering, to remove residual organic solvent, organic substance etc., make the good patterned field emission body of tack, its thickness is 2-600 nm, and width is 0.5-5--m.Promptly finished the making of the cloudy grid base plate of non-medium tripolar type field emission device in this.
Novel non-medium tripolar field emitter according to the present embodiment made, adopt electrophoretic deposition to shift the CNT field emmision material, can be on the deposition of electrode edge the CNT field emmision material, this all helps utilizing an edge enhancement of emission, strengthen the anticathode regulating and controlling effect of grid, reduce electrode and open field intensity, improve the field emission performance of field-transmitting cathode, technology is simple, and cost is low.
Embodiment two
Please refer to Fig. 5-7, substrate at first is provided.Substrate (31) at first is provided, and substrate (31) material for example is a glass.With 100*100mm panel technology is example, with the face glass of 100*100mm as cloudy grid base plate.Parallel electrodes is the film conductive electrode that combines made with coating technique, photoetching technique, and its thickness is 100-1000 nm.The electrode bottom is metal conductive oxide film (32), and it is made in conjunction with coating technique and photoetching technique.At first adopt magnetron sputtering method to prepare layer of metal oxide electroconductive film electrode at substrate (31), adopt photoetching technique again, through overexposure, development, etching, move back glue, that formation is parallel to each other, extraction pole is respectively at the electrode at two ends, and electrode edge is a rectangular configuration, shown in Fig. 5-7(35), its electrode width is 100-200 μ m, and the width (36) between its adjacent outstanding rectangular configuration is for being 10-100 μ m.The substrate that forms electrode pattern (31) is cleaned up and dries, then making bus electrode (33) on metal conductive oxide membrane electrode (32).Present embodiment selects for use silver slurry thick membrane electrode (33) as the electrode top layer, adopt screen printing technique,, make it in the middle of the metal conductive oxide membrane electrode having the glass substrate cover of electrode pattern to stamp ag paste electrode, its electrode width is more smaller than bottom electrode width, is 50-100 μ m.
At last, at the edge of metal conductive oxide membrane electrode (32) field emission body (34) is set.The material of field emission body is single the kind or two kinds and above nano material, selects CNT, C film or SnO with good emitting performance for use
2, ZnO, Bi
2O
3Deng metal oxide nano-wire, its particle scale is 1nm-10--m.In the present embodiment with four-needle-shape nano zinc oxide as field emission body, adopt silk screen print method in metal conductive oxide membrane electrode (32) edge printing nano material.For the ease of silk screen printing, four needle-like ZnO whiskers need be mixed with slurry, before the printing of ZnO slurry, remove the dust of electrode base board (31) surface adsorption earlier, carry out aiming at of screen printing forme and cathode substrate then, adopt the hand-screen machine then, adopt 250 order nylon mesh, material paste is poured on forme one side, on silk screen, applies one deck slurry uniformly with scraper plate.Be imprinted on equably then on the rectangular configuration (35) at cathode electrode edge.Next step enters sintering circuit to be completed for printing the back.Sintering carries out in programme controlled baking oven, sets working procedure, at 450 ℃ of insulation 30 min.Whole sintering process mainly is the organic solvent of removing in the slurry, simultaneously four needle-like ZnO semiconductors is carried out high annealing, helps improving the launch stability of ZnO, has promptly finished the making that cloudy grid base plate is launched in the non-medium tripolar field in this.
Novel non-medium tripolar field emitter according to the present embodiment made, adopt silk screen print method to shift the ZnO field emmision material, be implemented in ZnO field emmision material on the deposition of electrode edge, this all helps utilizing an edge enhancement of emission, strengthen the anticathode regulating and controlling effect of grid, reduce electrode and open field intensity, improve the field emission performance of field-transmitting cathode, and technology is simple, and cost is low.
Embodiment three
Please refer to Fig. 8-11, when making minus plate, at first provide substrate (41), substrate (41) material for example is a glass.With 100*100mm panel technology is example, with the face glass of 100*100mm as cloudy grid base plate.The strip shaped electric poles that is parallel to each other is the film conductive electrode that combines made with coating technique, photoetching technique, and its gross thickness is 100-1000 nm.The electrode bottom is metal conductive oxide film (42), it is made in conjunction with coating technique and photoetching technique, at first adopt magnetron sputtering method to prepare the layer of metal oxide electroconductive film at substrate (41), adopt photoetching technique again, through overexposure, develop, etching, move back glue, formation is parallel to each other, extraction pole is respectively at the metal conductive oxide membrane electrode (42) at two ends, and electrode edge is a rectangular configuration, shown in Fig. 8-11(45), its electrode width is 100-200 μ m, and its adjacent outstanding rectangular configuration or the gap width between the laciniation (46) are for being 10-100 μ m.Again the substrate that forms electrode pattern (41) is cleaned up, present embodiment is selected the top layer (43) of Cr/Cu/Ag/Cu/Cr composite metal film as electrode for use, adopt direct current magnetron sputtering process on substrate (41) surface sputtering sedimentation Cr film successively, the Cu film, the Ag film, the Cu film, the Cr film, form the Cr/Cu/Ag/Cu/Cr composite metal film, utilize photoetching technique to be produced on metal conductive oxide membrane electrode intermediate fabrication electrode mask layer then, the etching composite metal film, just prepare the Cr/Cu/Ag/Cu/Cr composite metal film electrode (43) on the metal conductive oxide membrane electrode, its electrode width is more smaller than bottom electrode width, is 50-100--m.Electrode after the etching does not temporarily move back earlier glue, photoresist in the preparation of electronic conductive layer as mask layer.
Then, substrate of glass (41) cleaning, drying, the space between the adjacent outstanding rectangular configuration (45) of parallel electrodes is provided with electronic conductive layer (44).Utilize magnetron sputtering method to make conductive film (44) in the substrate of glass that has cleaned up (41) with electron emissivity, generally can use conductive materials such as Cu, Ag, Au, Pt, Pd, Au, Zn to serve as target, and according to the characteristic of different metal, different temperature and the oxygen-supply quantities of control in magnetron sputtering process, sputter forms the conductive film of metal and metal oxide mixing on substrate of glass.Conductive film thickness is nanometer scale, becomes discontinuous isolated island shape, and the gap between isolated island is tens nanometers, because the tunneling effect electronics can conduct between isolated island, forms electric current.According to the difference of metal species, its thickness is also different, between 30-200nm.Promptly finished the making that cloudy grid base plate is launched in non-medium tripolar field with conductive film in this.
More than be preferred embodiment of the present invention, all changes of doing according to technical solution of the present invention when the function that is produced does not exceed the scope of technical solution of the present invention, all belong to protection scope of the present invention.
Claims (7)
1. novel non-medium tripolar field emitter, the cloudy grid base plate and the anode substrate that comprise the work of cooperatively interacting, it is characterized in that: this field emission device is the non-medium tripolar structure, be provided with a plurality of strip shaped electric poles that are parallel to each other side by side on the described cloudy grid base plate, described each strip shaped electric poles is made up of two-layer or two-layer the stack successively with top electrode, bottom is the metal conductive oxide membrane electrode, the upper strata is metal or conducting metal particles electrode, the edge of described metal conductive oxide membrane electrode is zigzag or rectangular configuration, is provided with field emmision material at the edge of described metal conductive oxide membrane electrode or the gap between two metal conductive oxide membrane electrodes is provided with electronic conductive layer; On described anode substrate, be provided with anode electrode and phosphor powder layer.
2. novel non-medium tripolar field emitter according to claim 1 is characterized in that: adopt silk screen print method, electrophoretic deposition, chemical vapour deposition technique or physical vaporous deposition at the edge of described metal conductive oxide membrane electrode field emmision material is set or the gap between two metal conductive oxide membrane electrodes is provided with electronic conductive layer.
3. novel non-medium tripolar field emitter according to claim 1 is characterized in that: the metal electrode that is used to make described strip shaped electric poles upper strata adopts vacuum coating technology to combine with photoetching technique and makes.
4. novel non-medium tripolar field emitter according to claim 1 is characterized in that: the conducting metal particles electrode that is used to make described strip shaped electric poles upper strata adopts screen printing technique to make.
5. novel non-medium tripolar field emitter according to claim 1 is characterized in that: the manufactured materials of described metal conductive oxide membrane electrode comprises the oxide of one or both and above those element combinations thereof in the oxide of Sn, Zn with conductivity, In, Sb, Bi, Cd element.
6. novel non-medium tripolar field emitter according to claim 1 is characterized in that: the manufactured materials of described metal or conducting metal particles electrode comprises that film conductive electrode material is the single thin film of Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, Ti or by multi-layer compound film, alloy firm or the conductive metal layer of its combination in any.
7. novel non-medium tripolar field emitter according to claim 1 is characterized in that: the span of spacing is (0.01-100) μ m between the adjacent strip shaped electric poles.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010251052 CN101894726A (en) | 2010-08-12 | 2010-08-12 | Novel non-medium tripolar field emitter |
| PCT/CN2011/077229 WO2012019503A1 (en) | 2010-08-12 | 2011-07-16 | Novel medium-free tripolar field emitter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010251052 CN101894726A (en) | 2010-08-12 | 2010-08-12 | Novel non-medium tripolar field emitter |
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| CN101894726A true CN101894726A (en) | 2010-11-24 |
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| WO (1) | WO2012019503A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112242547A (en) * | 2020-10-19 | 2021-01-19 | 苏州科技大学 | Preparation method of electronic skin biofuel cell and biofuel cell |
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| CN1126366A (en) * | 1994-06-09 | 1996-07-10 | 佳能株式会社 | Image-forming apparatus and manufacture method of same |
| EP0696814A1 (en) * | 1994-08-09 | 1996-02-14 | Fuji Electric Co., Ltd. | Field emission type electron emitting device and method of producing the same |
| US6858981B2 (en) * | 2002-04-22 | 2005-02-22 | Samsung Sdi Co., Ltd. | Electron emission source composition for field emission display device and field emission display device fabricated using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112242547A (en) * | 2020-10-19 | 2021-01-19 | 苏州科技大学 | Preparation method of electronic skin biofuel cell and biofuel cell |
| CN112242547B (en) * | 2020-10-19 | 2021-07-09 | 苏州科技大学 | Preparation method of electronic skin biofuel cell and biofuel cell |
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| WO2012019503A1 (en) | 2012-02-16 |
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Application publication date: 20101124 |