CN100428396C - Thin film cathode field emission display device based on porous aluminium oxide structure - Google Patents
Thin film cathode field emission display device based on porous aluminium oxide structure Download PDFInfo
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- CN100428396C CN100428396C CNB2005100864349A CN200510086434A CN100428396C CN 100428396 C CN100428396 C CN 100428396C CN B2005100864349 A CNB2005100864349 A CN B2005100864349A CN 200510086434 A CN200510086434 A CN 200510086434A CN 100428396 C CN100428396 C CN 100428396C
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- 239000010409 thin film Substances 0.000 title claims abstract description 120
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- 239000000463 material Substances 0.000 claims abstract description 19
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- 238000000034 method Methods 0.000 claims description 48
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- 239000011521 glass Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
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- 239000004411 aluminium Substances 0.000 claims description 19
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- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010931 gold Substances 0.000 claims description 3
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- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 210000003127 knee Anatomy 0.000 claims description 3
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
The present invention relates to a thin film cathode field emission display device based on a porous aluminum oxide structure, particularly to a thin film field emission flat plate display device. The present invention is characterized in that a field emission cathode in the thin film cathode field emission display device based on a porous aluminum oxide structure is composed of conductive body thin film electrodes and a thin film electron conduction emission layer, wherein the conductive body thin film electrodes are respectively connected to a row driving electrode and a column driving electrode; the thin film electron conduction emission layer is arranged between the conductive body thin film electrodes; the thin film electron conduction emission layer is composed of a layer of porous alumina thin film and an electricity conduction thin film arranged on the porous alumina thin film; the porous alumina thin film carryies out thinning treatment through the hole wall. The device of the present invention has the advantages of simple structure, low driving voltage, high electron emission rate beyond 5 percent, simple manufacture technology, no need of special treatment of material, no need of activation treatment of the emission cathode and electron emission generation through direct driving voltage exertion, and furthermore, the cost of the device is lower than that of in the prior art. The present invention is suitable for large-scale production.
Description
Technical field
The invention belongs to vacuum electronic emission type technical field of flat panel display, particularly a kind of thin-film field-emitting panel display spare
Technical background
Display of field-emitting flat panel is important candidate's device of following large-screen flat panel display, has and the similar display performance of cathode ray tube, is therefore paid much attention to.Field emission display comprises diamond thin field emission display, carbon nano-tube field emission display spare, surface conductive type cathodic field emissive display, various metal-insulator layer-semiconductor layer-metal (MISM) field emission display etc. according to the difference of cathode construction.Wherein with the present invention comparatively approaching be a kind of surface conductive emission flat panel display spare, its structure comprises by cathode base glass, anode substrate glass, sealing-in and supporting construction and constituting.Cathode base preparation on glass has row, column drive electrode and surface conductive emitting cathode, constitutes cathode base.Anode substrate preparation on glass has fluorescent material, black matrix and aluminium film anode, constitutes anode substrate.The cathode base structure comprises the buffer layer at cathode base glass, row drive electrode, row drive electrode, electron injection electrode, electronics extraction electrode, surface conductive layer and place, row, column drive electrode crosspoint as shown in Figure 2.Gap between injecting electrode and the extraction electrode is about 10 microns.The palladium oxide particle film of surface conductive layer about by 10 nanometers formed, and forming one 10 slit about nanometer in the middle of this film by pulse electric shock and activation.
The operation principle of surface conductive emissive display is as follows: when the electronics extraction electrode added positive voltage, electronics flow into the surface conductive layer from injecting electrode.Owing to have the electric field about 1 volt/micron between injecting electrode and the extraction electrode, so electronic energy obtains energy in the surface conductive layer.Owing to there is one 10 slit about nanometer in the surface conductive layer, so portions of electronics can be transmitted in the vacuum from this, and obtains quickening under the effect of anode voltage, high-energy electron bombardment anode, and excitated fluorescent powder is luminous.
The core of surface conductive emitting cathode is the structure and the preparation of thin film electronic conduction emission layer.In the existing manufacture method, adopt ink-jet, resins exchange and sintering to form discontinuous film.The discontinuous film of this layer also will pass through forming process, promptly through apply electric pulse between electrode, produces the slit of tens nanometer.The film that obtains so also will pass through so-called activation, promptly in hydrocarbon atmosphere, apply voltage between electrode, the heat that electric current produces during by film causes hydrocarbons decompose, the carbon that decomposites makes the slit be varied down to below 10 nanometers, thereby produces conduction and emission current.
The surface conductive emitting cathode of having realized can produce bigger emission current, satisfies the requirement of Field Emission Display.The stability and the uniformity of emission are also fine.But the problem that exists is that the activation in this structure cathode manufacturing process needs great electric current and very long processing time, becomes the maximum bottleneck in the volume production.Another problem that this structure cathode exists is that emissivity is little, and current best level is 3%.Emissivity is defined as the ratio of conduction current in emission current and the film.In display of field-emitting flat panel, negative electrode is that branch drives, and for selected line, all row electric currents all import this row, thereby causes the row electric current very big.For 60 inches High Resolution Display, when peak brightness reaches 1000cd/m
2The time, emission current is up to 60 milliamperes.3% emissivity means that capable electric current will be up to 2 amperes, and high like this drive current is that current driver circuit is difficult to provide, even such circuit is arranged, its cost also is very high.The expensive of drive circuit will cause the expensive of whole display, make it to be at war with the LCD and the plasma scope of current popular.
Summary of the invention
The present invention is directed to the deficiency and the shortcoming of surface conductive Field Emission Display in the prior art, a kind of novel thin film cathode field emission display device based on porous aluminium oxide structure is provided, make it have not only that display device structure is simple, material is common, processing technology is simple, the most outstanding characteristics are to make this device not need special activation to handle, and overcome the bottleneck in the volume production.The electron emissivity height of this device significantly reduces the drive circuit cost.
Another object of the present invention provides the preparation method of field-transmitting cathode in the aforementioned display device.
Technical scheme of the present invention is as follows:
A kind of thin film cathode field emission display device based on porous aluminium oxide structure is characterized in that: described field-transmitting cathode is made of the second conductor thin film electrode and the conduction of the thin film electronic between the first conductor thin film electrode and the second conductor thin film electrode emission layer that are connected to the first conductor thin film electrode on the capable drive electrode and be connected on the row drive electrode; The first conductor thin film electrode and the second conductor thin film electrode are positioned at the base plate glass surface, are horizontally, and thin film electronic conduction emission layer is between the first conductor thin film electrode and the second conductor thin film electrode; Thin film electronic conduction emission layer is connected by overlapped with the second conductor thin film electrode with the first conductor thin film electrode, at overlapping part, thin film electronic conduct emission layer be positioned at the top of the first conductor thin film electrode and the second conductor thin film electrode or below; Electronics is along the transmission of thin film electronic conduction emission layer, and transmission direction is parallel with the base plate glass surface; Described thin film electronic conduction emission layer is to be made of the porous alumina membrane and the deposition conductive film thereon of one deck through the hole wall reduction processing.
On the basis of such scheme, another feature of the present invention is below porous alumina membrane the layer of metal sull to be set, and this metal-oxide film is titanium oxide, zirconia, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, iron oxide, cobalt oxide, nickel oxide, antimony oxide or bismuth oxide film.
The material of conductive film of the present invention adopts carbon, silicon, chromium, tungsten, molybdenum, rhenium, niobium, tantalum, titanium, zirconium, hafnium, gold, silver, ruthenium, rhodium, palladium, osmium, platinum, iridium, iron, cobalt, nickel, rare earth metal, zinc oxide, indium oxide, tin oxide, tin indium oxide, palladium oxide, carbonitride, zirconium nitride, hafnium nitride, titanium nitride, tantalum nitride, the nitrogenize rare earth metal, ramet, zirconium carbide, hafnium carbide, titanium carbide, ramet, tungsten carbide, carborundum, carbonization rare earth metal or boronation rare earth metal.
Another technical characterictic of the present invention is: conductor thin film electrode in the described field-transmitting cathode adopts the interdigital electrode structure, and described thin film electronic conduction emission layer is arranged on all slits between the interdigital electrode; Or on the alternate slit that is arranged between the interdigital electrode of described thin film electronic conduction emission layer.
Technical characterictic of the present invention also is: described supporting construction adopts pottery or glass support wall construction, and knee wall fixedly is expert on the drive electrode.
The present invention also provides a kind of preparation method based on field-transmitting cathode in the thin film cathode field emission display device of porous aluminium oxide structure, it is characterized in that the thin film electronic conduction emission layer in the described field-transmitting cathode carries out as follows:
1) earlier with conventional method at cathode base deposition on glass single-layer metal aluminium film or comprise the composite metal film of aluminium film, wherein the lower metal of composite metal film comprises titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, iron, cobalt, nickel, antimony or bismuth, and the upper strata is an aluminium film;
2) carry out the porous oxidation processes with conventional method, obtain porous alumina membrane;
3) Woelm Alumina that obtains is carried out the hole wall reduction processing, promptly can soak preferably phosphoric acid in the acid of corrosion oxidation aluminium; Carry out thermal oxidation then, temperature is controlled at the softening point that is lower than glass, and metallic film remaining after the porous oxidation processes is oxidized to metal oxide;
4) through step 1)-3) above the porous alumina membrane that forms by conventional deposition single or multiple lift conductive film;
5) the thin film electronic conduction emission layer that obtains is carried out pulse current under vacuum condition and handle, burn the conductive channel on the Woelm Alumina hole wall, form thin film electronic conduction emission layer with electron emissivity.
The present invention compared with prior art, have the following advantages and the high-lighting effect: the present invention not only has the emission effciency height, emitting performance is stable and even, device architecture and preparation technology are simple, and material need not special processing, and emitting cathode does not need special activation to handle yet, directly apply driving voltage and just can produce the electronics emission, save process treatment time greatly, overcome the bottleneck in the volume production, be fit to large-scale production.The emissivity of field-transmitting cathode surpasses 5%, surpasses the level that prior art reaches, and the raising of emissivity reduces capable drive current greatly, thereby making that this device is used for large-screen, high definition, high brightness shows becomes possibility.
Description of drawings
Fig. 1 is the overall structure schematic diagram of the thin film cathode field emission display device based on porous aluminium oxide structure provided by the invention.
Fig. 2 is the cathode base structural representation of the surface conductive Field Emission Display in the prior art.
Fig. 3 is provided by the invention based on the cathode base structural representation in the thin film cathode field emission display device of porous aluminium oxide structure.
Fig. 4 (a) is the A-A section amplification figure of Fig. 3, and expression is based on the structural representation of a field-transmitting cathode in the thin film cathode field emission display device of porous aluminium oxide structure.(b) be the vertical view of a field emission cathode structure.
Fig. 5 is the A-A section amplification figure among Fig. 3, increases the structural representation of a field-transmitting cathode behind the layer of metal sull below the expression Woelm Alumina.
Fig. 6 is the structural representation of the interdigital electrode of field-transmitting cathode provided by the invention.
Fig. 7 is the structural representation of the another kind of interdigital electrode of field-transmitting cathode provided by the invention.
Among the figure: the 17-supporting construction; 18-glass sealing frame; The 19-electrons emitted; 31-cathode base glass; 32-row drive electrode; The capable drive electrode of 33-; 34-is connected to the conductor thin film electrode on the capable drive electrode; 35-is connected to the conductor thin film electrode on the row drive electrode; 36-thin film electronic conduction emission layer; The 37-buffer layer; Lower floor's porous alumina membrane in the 41-thin film electronic conduction emission layer, the upper strata conductive film in the 42-thin film electronic conduction emission layer; The 43-metal-oxide film; 10-anode substrate glass; 11,12,13-red, green, blue three primary colors fluorescent powder; 14-black matrix matrix; 15-anode aluminium film.
Embodiment
The preparation method based on the thin film cathode field emission display device and the field-transmitting cathode thereof of porous aluminium oxide structure that the present invention is proposed below reaches accompanying drawing in conjunction with the embodiments and describes in detail:
Fig. 1 is the overall structure schematic diagram that the present invention is based on the thin film cathode field emission display device of porous aluminium oxide structure.Should constitute by cathode base, anode substrate, glass sealing frame 18 and supporting construction 17 based on the thin film cathode field emission display device of porous aluminium oxide structure, described cathode base comprises buffer layer 37 between cathode base glass 31, row drive electrode 33, row drive electrode 32, the ranks drive electrode crosspoint top electrode, is connected to the conductor thin film electrode 34 on the capable drive electrode, be connected to the conductor thin film electrode 35 on the row drive electrode, thin film electronic conduction emission layer 36.Described anode substrate comprises anode substrate glass 10, three primary colors fluorescent powder 11,12 and 13, black matrix matrix 14 and aluminium film anode 15.Described supporting construction 17 adopts pottery or glass support wall construction, and knee wall fixedly is expert on the drive electrode.
Fig. 3 is provided by the invention based on the cathode base structural representation in the thin film cathode field emission display device of porous aluminium oxide structure.Cathode base comprises cathode base glass 31, row drive electrode 32, row drive electrode 33 and be connected respectively to the conductor thin film electrode 34 on the capable drive electrode and be connected to conductor thin film electrode 35 on the row drive electrode; Be connected to conductor thin film electrode 34 and the conductor thin film electrode 35 that is connected on the row drive electrode on the capable drive electrode, its about 10 microns at interval is thin film electronic conduction emission layer 36 in the middle slot.Place, crosspoint at the row and column drive electrode carries out electric insulation by buffer layer 37 between the ranks drive electrode.
Fig. 4 is the concrete structure schematic diagram of a field-transmitting cathode.The thin film electronic conduction emission layer 36 that is arranged between the two conductor thin film electrodes is made of porous alumina membrane 41 and the conductive film 42 on it, to be the metallic aluminium film form through porous anode multiaperture pellumina wherein, this electrical conductivity emission layer be positioned at the following of two conductor thin film electrodes or above.Conductive film material is a carbon, silicon, chromium, tungsten, molybdenum, rhenium, niobium, tantalum, titanium, zirconium, hafnium, scandium, yttrium, gold, silver, ruthenium, rhodium, palladium, osmium, platinum, iridium, iron, cobalt, nickel, rare earth metal, zinc oxide, indium oxide, tin oxide, tin indium oxide, palladium oxide, carbonitride, zirconium nitride, hafnium nitride, titanium nitride, tantalum nitride, ramet, zirconium carbide, hafnium carbide, titanium carbide, ramet, tungsten carbide, carborundum, the rare earth metal nitride, rare earth metal carbide or rare earth metal borides.
Fig. 5 represents to increase below the Woelm Alumina structural representation of a field-transmitting cathode behind the layer of metal sull.Described metal-oxide film 43 is titanium oxide, zirconia, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, iron oxide, cobalt oxide, nickel oxide, antimony oxide or bismuth oxide film.
Fig. 6 is the structural representation of the interdigital electrode of field-transmitting cathode provided by the invention.The conductor thin film electrode 35 that is connected to the conductor thin film electrode 34 on the capable drive electrode and is connected on the row drive electrode is the interdigital electrode structure, and described thin film electronic conduction emission layer 36 is arranged on all slits between the interdigital electrode.
Fig. 7 is the structural representation of the another kind of interdigital electrode of field-transmitting cathode provided by the invention.Be connected to conductor thin film electrode 34 on the capable drive electrode and the conductor thin film electrode 35 that is connected on the row drive electrode and be the interdigital electrode structure, on the described thin film electronic conduction emission layer 36 alternate slits that are arranged between the interdigital electrode.
Adopt the interdigital electrode structure, can increase the effective length of negative electrode, increase emission current, perhaps, help prolonging the useful life of negative electrode and whole display device keeping reducing the emission current on the unit cathode length under the certain prerequisite of emission current.
The present invention adopts ranks matrix electrodes Drive Structure, and wherein the ranks drive electrode can adopt metal film electrode, the metal thick membrane electrode that also can adopt the printing of silver slurry to obtain, and this will determine according to screen size.During the small screen, the electrode resistance that needs can be bigger, generally can adopt membrane electrode, as chromium-copper-chromium electrode.When screen is big, need drive electrode resistance less, thick membrane electrode is more suitable.The invention belongs to vacuum electron device, also comprise annex indispensable in the vacuum electron device on the structure,, do not need specific explanation and explanation as Vacuum exhaust tube, vacuum getter etc.
Embodiment 1
At first prepare cathode base, clean cathode base glass 31, evaporate layer of metal aluminium film thereon with conventional cleaning procedure, thickness is greater than 300 nanometers, underlayer temperature 80 degree during evaporation is implemented porous anode then in concentration is 5% phosphoric acid, voltage control is at 30 volts during oxidation.The Woelm Alumina that obtains soaked in phosphoric acid 40 minutes, the attenuate hole wall.With photoetching be lifted away from fabrication techniques metal electrode 34 and metal electrode 35, electrode material is chromium-Yin.Make the spacer medium 37 between row drive electrode 32, the ranks drive electrode and the drive electrode 33 of going successively with the method for silk screen printing and sintering.Three's material is respectively silver, low-melting glass and silver.Form the photoresist figure of thin film electronic conduction emission layer with photoetching technique between metal electrode 34 and metal electrode 35, needing on the position of thin film electronic conduction emission layer does not have photoresist, and all the other are local to be the photoresist covering.Deposition one deck carbon film makes that its square resistance is the megohm magnitude.In acetone soln, remove photoresist, on the position of thin film electronic conduction emission layer correspondence, keep carbon film.Woelm Alumina 41 and carbon film 42 constitute thin film electronic conduction emission layer 36.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix matrix 14 with conventional method earlier, and republish three primary colors fluorescent powder 11,12 and 13, last deposition of aluminum film 15.With cathode base, anode substrate, the 18 usefulness frit seals of glass sealing frame together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is vertical with anode substrate glass with cathode base glass, is provided with on the drive electrode of being expert at.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, handles through current impulse, burn the partially conductive passage on the Woelm Alumina hole wall after, produce the electronics emission, emissivity can reach more than 5%.This device can show dynamic menu.
Embodiment 2
At first prepare cathode base, cleaning procedure with routine cleans cathode base glass 31, deposited by electron beam evaporation deposits the aluminium film of metal titanium membrane and one deck 500 nanometer thickness of 10 nanometers thereon, underlayer temperature 200 degree during evaporation, implement porous anode then in concentration is 5% phosphoric acid, voltage control is at 100 volts during oxidation.The Woelm Alumina that obtains soaked in phosphoric acid 60 minutes, the attenuate hole wall.Above-mentioned substrate was carried out thermal oxidation 30 minutes, and temperature is controlled at 450 degree.With photoetching be lifted away from fabrication techniques metal electrode 34 and 35, electrode material is chromium-Yin.Make the spacer medium 37 between row drive electrode 32, the ranks drive electrode and the drive electrode 33 of going successively with the method for silk screen printing and sintering.Three's material is respectively silver, low-melting glass and silver.Form the photoresist figure of thin film electronic conduction emission layer with photoetching technique between metal electrode 34 and 35, needing on the position of thin film electronic conduction emission layer does not have photoresist, and all the other are local to be the photoresist covering.Deposition one deck carbon film makes that its square resistance is the megohm magnitude.In acetone soln, remove photoresist, on the position of thin film electronic conduction emission layer correspondence, keep carbon film.Titanium oxide 43, Woelm Alumina 41 and carbon film 42 constitute thin film electronic conduction emission layer 36.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix matrix 14 with conventional method earlier, and republish three primary colors fluorescent powder 11,12 and 13, last deposition of aluminum film 15.With cathode base, anode base glass, the 18 usefulness frit seals of glass sealing frame together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is vertical with anode substrate glass with cathode base glass, is provided with on the drive electrode of being expert at.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, handles through current impulse, burn the partially conductive passage on the Woelm Alumina hole wall after, produce the electronics emission, emissivity can reach 6%.This device can show dynamic menu.
Embodiment 3
At first prepare cathode base, cleaning procedure with routine cleans cathode base glass 31, evaporates the aluminium film of one deck 500 nanometer thickness thereon, underlayer temperature 200 degree during evaporation, implement porous anode then in concentration is 10% oxalic acid, voltage control is at 50 volts during oxidation.The Woelm Alumina that obtains soaked in phosphoric acid 60 minutes, the attenuate hole wall.Deposited by electron beam evaporation method deposition one deck carbon film is not heated during evaporation on Woelm Alumina, and the square resistance that obtains is the megohm magnitude.Etch away unnecessary Woelm Alumina and carbon film with photoetching and lithographic method again, only the film on reservation and the negative electrode correspondence position.Woelm Alumina 41 and carbon film 42 constitute thin film electronic conduction emission layer 36.With photoetching be lifted away from the metal electrode 34 and 35 shown in fabrication techniques Fig. 3, electrode material is an iridium.Make the spacer medium 37 between row drive electrode 32, the ranks drive electrode and the drive electrode 33 of going successively with the method for silk screen printing and sintering.Three's material is respectively silver, low-melting glass and silver.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix matrix 14 with conventional method earlier, and republish three primary colors fluorescent powder 11,12 and 13, last deposition of aluminum film 15.With cathode base, anode substrate, the 18 usefulness frit seals of glass sealing frame together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is vertical with anode substrate glass with cathode base glass, is provided with on the drive electrode of being expert at.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, handles through current impulse, burn the partially conductive passage on the Woelm Alumina hole wall after, produce the electronics emission, emissivity can reach 10%.This device can show dynamic menu.
Embodiment 4
At first prepare cathode base, cleaning procedure with routine cleans cathode base glass 31, evaporates the aluminium film of one deck 500 nanometer thickness thereon, underlayer temperature 80 degree during evaporation, implement porous anode then in concentration is 10% oxalic acid, voltage control is at 50 volts during oxidation.The Woelm Alumina that obtains soaked in phosphoric acid 60 minutes, the attenuate hole wall.Deposited by electron beam evaporation method deposition one deck lanthanum hexaboride on Woelm Alumina, substrate is not heated during evaporation, and the square resistance that obtains is the megohm magnitude.Etch away unnecessary Woelm Alumina and lanthanum hexaboride film with photoetching and lithographic method again, only the film on reservation and the negative electrode correspondence position.Woelm Alumina 42 and lanthanum hexaboride 42 constitute thin film electronic conduction emission layer 36.With photoetching be lifted away from the metal electrode 34 and 35 shown in fabrication techniques Fig. 5, electrode material is chromium-copper-chromium.Make the spacer medium 37 between row drive electrode 32, the ranks drive electrode and the drive electrode 33 of going successively with the method for silk screen printing and sintering.Three's material is respectively silver, low-melting glass and silver.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix matrix 14 with conventional method earlier, and republish three primary colors fluorescent powder 11,12 and 13, last deposition of aluminum film 15.With cathode base, anode substrate, the 18 usefulness frit seals of glass sealing frame together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is vertical with anode substrate glass with cathode base glass, is provided with on the drive electrode of being expert at.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, handles through current impulse, burn the partially conductive passage on the Woelm Alumina hole wall after, produce the electronics emission, emissivity can reach 8%.This device can show dynamic menu.
Embodiment 5
At first prepare cathode base, cleaning procedure with routine cleans cathode base glass 31, the deposited by electron beam evaporation method deposits the tantalum film of about 15 nanometers of a layer thickness and the aluminium film of one deck 500 nanometer thickness thereon, underlayer temperature 80 degree during evaporation, implement porous anode then in concentration is 10% oxalic acid, voltage control is at 50 volts during oxidation.The Woelm Alumina that obtains soaked in phosphoric acid 60 minutes, the attenuate hole wall.Above-mentioned substrate is carried out thermal oxidation in air, temperature is 400 degree.With reactive sputtering method deposition one deck carbon nitride films, substrate is not heated during deposition on Woelm Alumina, and the square resistance that obtains is the megohm magnitude.Etch away unnecessary Woelm Alumina and carbon nitride films with photoetching and etching etching method again, only the film on reservation and the negative electrode correspondence position.Tantalum-oxide film 43, Woelm Alumina 41 and carbonitride 42 films constitute thin film electronic conduction emission layer 36.With photoetching be lifted away from the metal electrode 34 and 35 shown in fabrication techniques Fig. 6, electrode material is a platinum.Make the spacer medium 37 between row drive electrode 32, the ranks drive electrode and the drive electrode 33 of going successively with the method for silk screen printing and sintering.Three's material is respectively silver, low-melting glass and silver.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix matrix 14 with conventional method earlier, and republish three primary colors fluorescent powder 11,12 and 13, last deposition of aluminum film 15.With cathode base, anode substrate, the 18 usefulness frit seals of glass sealing frame together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is vertical with anode substrate glass with cathode base glass, is provided with on the drive electrode of being expert at.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, handles through current impulse, burn the partially conductive passage on the Woelm Alumina hole wall after, produce the electronics emission, emissivity can reach more than 5%.This device can show dynamic menu.
Embodiment 6
At first prepare cathode base, cleaning procedure with routine cleans cathode base glass 31, the deposited by electron beam evaporation method deposits the niobium film of about 15 nanometers of a layer thickness and the aluminium film of one deck 500 nanometer thickness thereon, underlayer temperature 80 degree during evaporation, implement porous anode then in concentration is 10% oxalic acid, voltage control is at 50 volts during oxidation.The Woelm Alumina that obtains soaked in phosphoric acid 60 minutes, the attenuate hole wall.Above-mentioned substrate is carried out thermal oxidation in air, temperature is 400 degree.On Woelm Alumina with direct current sputtering method deposition one deck carbon film and one deck iridium film, substrate 200 degree of heating during deposition, the square resistance that obtains is the megohm magnitude.Etch away unnecessary Woelm Alumina, carbon and iridium film with photoetching and lithographic method again, only the film on reservation and the negative electrode correspondence position.Woelm Alumina 41, carbon and iridium film 42 constitute thin film electronic conduction emission layer 36.With photoetching be lifted away from the metal electrode 34 and 35 shown in fabrication techniques Fig. 3, electrode material is a platinum.Make the spacer medium 37 between row drive electrode 32, the ranks drive electrode and the drive electrode 33 of going successively with the method for silk screen printing and sintering.Three's material is respectively silver, low-melting glass and silver.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix matrix 14 with conventional method earlier, and republish three primary colors fluorescent powder 11,12 and 13, last deposition of aluminum film 15.With cathode base, anode substrate, the 18 usefulness frit seals of glass sealing frame together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is vertical with anode substrate glass with cathode base glass, is provided with on the drive electrode of being expert at.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, handles through current impulse, burn the partially conductive passage on the Woelm Alumina hole wall after, produce the electronics emission, emissivity can reach 6%.This device can show dynamic menu.
Claims (8)
1. thin film cathode field emission display device based on porous aluminium oxide structure, mainly by cathode base, anode substrate, glass sealing frame and supporting construction constitute, described cathode base comprises cathode base glass (31), be arranged on cathode base capable drive electrode (33) on glass, row drive electrode (32), buffer layer (37) between the top electrode of ranks drive electrode crosspoint and the field-transmitting cathode of locating near each ranks drive electrode crosspoint, described anode substrate comprises anode substrate glass (10), be arranged on glass red of anode substrate, green, blue three primary colors fluorescent powder (11,12,13), black matrix matrix (14) and aluminium film anode (15) is characterized in that: described field-transmitting cathode is made of the second conductor thin film electrode (35) and the conduction emission layer of the thin film electronic between the first conductor thin film electrode and the second conductor thin film electrode (36) that are connected to the first conductor thin film electrode (34) on the capable drive electrode and be connected on the row drive electrode; The first conductor thin film electrode and the second conductor thin film electrode are positioned at the base plate glass surface, are horizontally, and thin film electronic conduction emission layer is between the first conductor thin film electrode and the second conductor thin film electrode; Thin film electronic conduction emission layer is connected by overlapped with the second conductor thin film electrode with the first conductor thin film electrode, at overlapping part, thin film electronic conduct emission layer be positioned at the top of the first conductor thin film electrode and the second conductor thin film electrode or below; Electronics is along the transmission of thin film electronic conduction emission layer, and transmission direction is parallel with the base plate glass surface; Described thin film electronic conduction emission layer (36) is to be made of the porous alumina membrane (41) and the deposition conductive film (42) thereon of one deck through the hole wall reduction processing.
2. the thin film cathode field emission display device based on porous aluminium oxide structure according to claim 1, it is characterized in that: increase layer of metal sull below described porous alumina membrane, described metal-oxide film is titanium oxide, zirconia, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, iron oxide, cobalt oxide, nickel oxide, antimony oxide or bismuth oxide film.
3. according to claim 1 or 2 described thin film cathode field emission display devices based on porous aluminium oxide structure, it is characterized in that: the material of described conductive film adopts carbon, silicon, chromium, tungsten, molybdenum, rhenium, niobium, tantalum, titanium, zirconium, hafnium, gold, silver, ruthenium, rhodium, palladium, osmium, platinum, iridium, iron, cobalt, nickel, rare earth metal, zinc oxide, indium oxide, tin oxide, tin indium oxide, palladium oxide, carbonitride, zirconium nitride, hafnium nitride, titanium nitride, tantalum nitride, the nitrogenize rare earth metal, ramet, zirconium carbide, hafnium carbide, titanium carbide, ramet, tungsten carbide, carborundum, carbonization rare earth metal or boronation rare earth metal.
4. the thin film cathode field emission display device based on porous aluminium oxide structure according to claim 1 and 2, it is characterized in that: the first conductor thin film electrode (34) in the described field-transmitting cathode and the second conductor thin film electrode (35) adopt the interdigital electrode structure, and described thin film electronic conduction emission layer (36) is arranged on all slits between the interdigital electrode.
5. the thin film cathode field emission display device based on porous aluminium oxide structure according to claim 1 and 2, it is characterized in that: the first conductor thin film electrode (34) in the described field-transmitting cathode and the second conductor thin film electrode (35) adopt the interdigital electrode structure, on the alternate slit that is arranged between the interdigital electrode of described thin film electronic conduction emission layer (36).
6. the thin film cathode field emission display device based on porous aluminium oxide structure according to claim 1 is characterized in that, described supporting construction adopts pottery or glass support wall construction, and knee wall fixedly is expert on the drive electrode.
7. preparation method based on field-transmitting cathode in the thin film cathode field emission display device of porous aluminium oxide structure as claimed in claim 1 or 2 is characterized in that: the thin film electronic conduction emission layer in the described field-transmitting cathode carries out as follows:
1) earlier with conventional method at cathode base deposition on glass single-layer metal aluminium film or comprise the composite metal film of aluminium film, the lower metal of composite metal film wherein comprises titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, iron, cobalt, nickel, antimony or bismuth, and the upper strata is an aluminium film;
2) carry out the porous oxidation processes with conventional method, obtain porous alumina membrane;
3) Woelm Alumina that obtains is carried out the hole wall reduction processing, promptly can soak in the acid of corrosion oxidation aluminium; So carry out thermal oxidation, temperature is controlled at the softening point that is lower than glass, and metallic film remaining after the porous oxidation processes is oxidized to metal oxide;
4) through step 1)-3) above the porous alumina membrane that forms by conventional deposition single or multiple lift conductive film;
5) the thin film electronic conduction emission layer that obtains is carried out pulse current under vacuum condition and handle, burn the partially conductive passage on the Woelm Alumina hole wall, form thin film electronic conduction emission layer with electron emissivity.
8. according to the described preparation method of claim 7, it is characterized in that: Woelm Alumina is carried out the hole wall reduction processing adopt phosphoric acid described in the step 3) based on field-transmitting cathode in the thin film cathode field emission display device of porous aluminium oxide structure.
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| US20040150979A1 (en) * | 2002-07-26 | 2004-08-05 | C.R.F. Societa Consortile Per Azioni | Light-emitting device comprising porous alumina, and corresponding method of fabrication |
| EP1566823A1 (en) * | 2002-11-25 | 2005-08-24 | Toshiba Carrier Corporation | Electron source device and display |
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| CN1233344A (en) * | 1996-08-14 | 1999-10-27 | Add视觉公司 | Electroluminescent lamp designs |
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