CN100452284C - Thin film transistor controlled thin film field emission display device - Google Patents
Thin film transistor controlled thin film field emission display device Download PDFInfo
- Publication number
- CN100452284C CN100452284C CNB2006100896217A CN200610089621A CN100452284C CN 100452284 C CN100452284 C CN 100452284C CN B2006100896217 A CNB2006100896217 A CN B2006100896217A CN 200610089621 A CN200610089621 A CN 200610089621A CN 100452284 C CN100452284 C CN 100452284C
- Authority
- CN
- China
- Prior art keywords
- electrode
- film
- film transistor
- thin film
- field emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a thin film field emission display device controlled by a thin film transistor, which belongs to the technical field of vacuum electron emission type flat plate display. The present invention is characterized in that a ground electrode and a three electrode type thin film transistor in parallel with a column electrode are arranged on a cathode base plate; the thin film transistor is connected with a two electrode type thin film field emission cathode which is composed of an electron injection electrode, an electron extraction electrode, and an electron conduction emission layer arranged between the two electrodes to form an emission unit; the three electrode type thin film transistor is composed of a grid electrode, a source electrode, a leakage electrode, an insulation layer arranged between a plane of the grid electrode and a plane of the source electrode and the leakage electrode, and a semiconductor thin film arranged on the insulation layer; the source electrode is connected with a ground electrode; the grid electrode is connected with a row electrode; the leakage electrode is connected with the electron injection electrode; the electron extraction electrode is connected with the column electrode. The present invention successfully solves the problem of oversize column current in an ordinary surface conduction emission display device, the driving voltage is directly exerted to generate electron emission, and the technology treatment time is greatly reduced, and furthermore, the present invention is suitable for large scale production.
Description
Technical field
The present invention relates to a kind of thin-film field-emitting panel display spare, particularly a kind of thin film field emission display device by thin-film transistor control belongs to vacuum electronic emission type technical field of flat panel display.
Technical background
Recently, flat-panel display device (FPD) development is advanced by leaps and bounds, and the trend that replaces traditional cathode ray tube (CRT) is arranged greatly.Currently marketed main flow flat-panel monitor comprises LCD (LCD), plasma display (PDP) and a small amount of undersized organic light emitting diode display (OLED).As with the similar Field Emission Display of CRT principle of luminosity (FED), for various reasons, development being subjected to certain restriction.Because FED has unique advantage aspect display performance, therefore research and development never stops.Since 04 year, the surface conductive emissive display of CANON's development showed outstanding especially performance, has more excited the research boom of Field Emission Display.
Display of field-emitting flat panel comprises the little sharp type field emission display of metal, diamond thin field emission display, carbon nano-tube field emission display spare, surface conductive emissive display (SED), various metal one insulating barrier, one metal (MIM) field emission display etc., wherein with the present invention comparatively approaching be a kind of surface conductive emission flat panel display spare, its structure comprises cathode glass substrate, anode glass substrate, sealing-in and supporting construction.Wherein cathode glass substrate comprises base plate glass, row, column drive electrode and surface conductive emitting cathode, and the anode glass substrate comprises base plate glass, fluorescent material, black matrix and anode aluminium film.Cathode base structure wherein comprises the buffer layer at base plate glass, row drive electrode, row drive electrode, electron injection electrode, electronics extraction electrode, surface conductive layer and place, row, column drive electrode crosspoint as shown in Figure 2.Gap between injecting electrode and the extraction electrode is about 10 microns.The palladium oxide particle film of surface conductive layer about by 10 nanometers formed, and forming one 10 slit about nanometer in the middle of this film by pulse electric shock and activation.
The operation principle of surface conductive emitting cathode is as follows: when extraction electrode added positive voltage, electronics flow into the surface conductive layer from injecting electrode.Owing to have the electric field about 1 volt/micron between injecting electrode and the extraction electrode, so electronic energy obtains energy in the surface conductive layer.Owing to there is one 10 slit about nanometer in the surface conductive layer, so portions of electronics can be transmitted in the vacuum from this, and obtains quickening under the effect of anode voltage, high-energy electron bombardment anode, and excitated fluorescent powder is luminous.
The core of surface conductive emitting cathode is the structure and the preparation of thin film electronic conduction emission layer.In the manufacture method, adopt ink-jet, resins exchange and sintering to form discontinuous film.The discontinuous film of this layer also will pass through forming process, promptly through apply electric pulse between electrode, produces the slit of sub-micron.The film that obtains so also will pass through so-called activation, promptly in hydrocarbon atmosphere, apply voltage between electrode, the heat that electric current produces during by film causes hydrocarbons decompose, the carbon that decomposites makes the slit be varied down to below 10 nanometers, thereby produces conduction and emission current.
The field-transmitting cathode of said structure can produce bigger emission current, satisfies the requirement of Field Emission Display.The stability and the uniformity of emission are also fine.An important indicator is an emissivity, is defined as the ratio of conduction current in emission current and the film, and the best level of the emissivity that this structure cathode reaches is 3%.In display of field-emitting flat panel, negative electrode is that branch drives, and for selected line, all row electric currents all import this row, thereby causes the row electric current very big.For 60 inches High Resolution Display, when peak brightness reaches 1000cd/m
2The time, emission current is up to 60 milliamperes.3% emissivity means that capable electric current will be up to 2 amperes, and high like this drive current is that current driver circuit is difficult to provide, even such circuit is arranged, its cost also is very high.The expensive of drive circuit will cause the expensive of whole display, make it and can't be applied.For this surface conductive emitting cathode, emissivity reaches 3%, has been quite high, and stability and uniformity that continuation raising emissivity will cause launching reduce, and do not satisfy the basic demand that shows.In addition, the column electrode resistance that excessive capable current requirements is very little will cause electrode blocked up, increase technology difficulty, reduce the reliability of device, cause too high cost equally.
Summary of the invention
Purpose of the present invention provides a kind of thin film field emission display device of thin-film transistor control at deficiency and shortcoming that surface conductive field emission display in the prior art exists.Make it not only have characteristics such as simple in structure, that material is common, processing technology is simple, and most importantly thoroughly solve the excessive problem of row electric current in the general surface conduction emissive display, make capable electric current include only very little capacity current, reach almost negligible degree, thereby further reduce the reliability of the expensive of whole display and raising device.
Technical scheme of the present invention is as follows:
A kind of thin film field emission display device of thin-film transistor control, contain cathode base, anode substrate, sealing structure and supporting construction, described cathode base comprises cathode base glass, be arranged between cathode base column electrode on glass, row electrode, electrode and the electrode buffer layer on the crosspoint and the diarch membrane field emission cathode between the row, column electrode, and this diarch field membrane field emission cathode is made up of electron injection electrode, electronics extraction electrode and the electrical conductivity emission layer between them; Described anode substrate comprises anode substrate glass, is arranged on anode substrate red-green-blue fluorescent material on glass, black matrix and aluminium film anode, it is characterized in that: also comprise the ground electrode and the triple-pole type thin-film transistor that be arranged in parallel with the row electrode on the described cathode base; Described diarch membrane field emission cathode is connected with the triple-pole type thin-film transistor, be arranged between row electrode and the ground electrode, described triple-pole type thin-film transistor is by grid, source electrode, drain electrode, insulating barrier and the semiconductive thin film on this insulating barrier between plane, grid place and source electrode, the drain electrode plane, place constitute, wherein said source electrode is connected with ground electrode, described grid is connected with column electrode, and described drain electrode is connected with electron injection electrode, and described electronics extraction electrode is connected with the row electrode.
Electrical conductivity emission layer in the diarch membrane field emission cathode among the present invention is to be made of the single or multiple lift semiconductive thin film.
Electrical conductivity emission layer of the present invention can also be made of laminated film, following one deck of this composite membrane is the metal-oxide film that metallic film forms through peroxidating, top one deck is the single or multiple lift semiconductive thin film, and described metal-oxide film is the oxide of zinc, cadmium, magnesium, aluminium, gallium, indium, tin, lead, antimony, bismuth, rare earth metal or the oxide of these metal alloys; Perhaps the following of laminated film is the metal fluoride film, is the single or multiple lift semiconductive thin film above.The fluoride that described metal fluoride film is lithium, sodium, magnesium, calcium, strontium, barium, aluminum metal or the fluoride of their alloys.
The present invention also provides the thin film field emission display device of another kind of thin-film transistor control, this thin film field emission display device contains cathode base, anode substrate, sealing structure and supporting construction, described cathode base comprises cathode base glass, is arranged on the diarch membrane field emission cathode between cathode base column electrode on glass, row electrode and the row, column electrode, and this diarch field membrane field emission cathode is made up of electron injection electrode, electronics extraction electrode and the electrical conductivity emission layer between them; Described anode substrate comprises anode substrate glass, is arranged on anode substrate red-green-blue fluorescent material on glass, black matrix and aluminium film anode, it is characterized in that: also comprise the ground electrode and the triple-pole type thin-film transistor that be arranged in parallel with the row electrode on the described cathode base; Described diarch membrane field emission cathode is connected with the triple-pole type thin-film transistor, be arranged between row electrode and the ground electrode, described triple-pole type thin-film transistor is by grid, source electrode, drain electrode, insulating barrier and the semiconductive thin film on this insulating barrier between plane, grid place and source electrode, the drain electrode plane, place constitute, and described column electrode is simultaneously as grid; Described insulating barrier is simultaneously as the buffer layer on the crosspoint between electrode and the electrode; Wherein said source electrode is connected with ground electrode, and described drain electrode is connected with electron injection electrode, and described electronics extraction electrode is connected with the row electrode.
The present invention compared with prior art, have the following advantages and the high-lighting effect: have only very little capacity current among the present invention in the column electrode, thoroughly overcome the excessive problem of row electric current in the general surface conduction emission demonstration, made drive circuit greatly simplify, cost reduces.Requirement for the device emissivity also greatly reduces, and just can satisfy the needs that high-performance shows fully as long as reach 1%.Among the present invention, emitting performance is stable and even, and device architecture and preparation technology are simple, and material need not special processing, and emitting cathode does not need special activation to handle yet, and directly applies driving voltage and just can produce electronics and launch, save process treatment time greatly, be fit to large-scale production.This device is used for large-screen, high definition, high brightness shows becomes possibility.
Description of drawings
Fig. 1 is the structural representation of the thin film field emission display device of thin-film transistor control of the present invention.
Fig. 2 is the cathode base structural representation of the surface conductive field emission display in the prior art.
Fig. 3 is the structural representation of the cathode base embodiment in the thin film field emission display device of thin-film transistor provided by the invention control.
Fig. 4 is the A-A section amplification figure of Fig. 3, expresses the concrete structure schematic diagram of the membrane field emission cathode of thin-film transistor control in the transmitter unit.
Fig. 5 is the structural representation of another kind of cathode base embodiment provided by the invention.
Among the figure: 30-cathode base glass; The 31-column electrode; 32-row electrode; The 33-ground electrode; Electron injection electrode in the 34-diarch membrane field emission cathode; Electronics extraction electrode in the 35-diarch membrane field emission cathode; Electrical conductivity emission layer in the 36-diarch membrane field emission cathode; The grid of 37-triple-pole type thin-film transistor; The source electrode of 38-triple-pole type thin-film transistor; The drain electrode of 39-triple-pole type thin-film transistor; Insulating barrier in the 310-triple-pole type thin-film transistor; Semiconductor layer in the 311-triple-pole type thin-film transistor; 10-anode substrate glass; The 11-red fluorescence powder; The 12-green emitting phosphor; The 13-blue colour fluorescent powder; The 14-black matrix; 15-anode aluminium film; The 17-supporting construction; The 18-sealing structure; The 19-electrons emitted.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention, concrete structure and preparation method are further described.
Fig. 1 is the overall structure schematic diagram of the film field emission display of thin-film transistor control provided by the invention.This display contains cathode base, anode substrate, sealing structure 18 and supporting construction 17, cathode base comprises cathode base glass 30, be arranged between cathode base column electrode on glass 31, row electrode 32, electrode and the electrode buffer layer 312 on the crosspoint and the diarch membrane field emission cathode between the row, column electrode, this diarch field membrane field emission cathode is made up of electron injection electrode 34, electronics extraction electrode 35 and the electrical conductivity emission layer 36 between them; Described anode substrate comprises anode substrate glass 10, is arranged on anode substrate red fluorescence powder on glass 11, green emitting phosphor 12, blue colour fluorescent powder 13, black matrix 14 and aluminium film anode 15; On cathode base, also comprise the ground electrode 33 and the triple-pole type thin-film transistor that be arranged in parallel with row electrode 32; Described diarch membrane field emission cathode is connected with the triple-pole type thin-film transistor, be arranged between row electrode and the ground electrode, described triple-pole type thin-film transistor is by grid 37, source electrode 38, drain electrode 39, insulating barrier 310 and the semiconductive thin film on this insulating barrier 311 between plane, grid place and source electrode, the drain electrode plane, place constitute.
Fig. 3 is the structural representation of the cathode base embodiment in the thin film field emission display device of thin-film transistor provided by the invention control.Cathode base comprises cathode base glass 30, is arranged on diarch membrane field emission cathode and triple-pole type thin-film transistor between cathode base column electrode on glass 31, row electrode 32, ground electrode 33, the row-column electrode; This diarch field membrane field emission cathode is made up of electron injection electrode 34, electronics extraction electrode 35 and the electrical conductivity emission layer 36 between them; The triple-pole type thin-film transistor is by grid 37, source electrode 38, drain electrode 39, insulating barrier 310 and the semiconductive thin film on this insulating barrier 311 between plane, grid place and source electrode, the drain electrode plane, place constitute, wherein said source electrode 38 is connected with ground electrode 33, described grid 37 is connected with column electrode 31, and described drain electrode 39 is connected with electron injection electrode 34, and described electronics extraction electrode 35 is connected with row electrode 32.Place, crosspoint at column electrode and row electrode ground electrode carries out electric insulation by buffer layer 312 between the electrode.
Fig. 4 is the A-A section amplification figure of Fig. 3, expresses the concrete structure schematic diagram of the membrane field emission cathode of thin-film transistor control in the transmitter unit.Electrical conductivity emission layer in the diarch membrane field emission cathode among electrical conductivity emission layer the present invention among the present invention in the diarch membrane field emission cathode is to be made of the single or multiple lift semiconductive thin film.The electrical conductivity emission layer can also be made of laminated film, and the following metal-oxide film that is metallic film through peroxidating formation of this composite membrane is the single or multiple lift semiconductive thin film above.Described metal-oxide film is the oxide of zinc, cadmium, magnesium, aluminium, gallium, indium, tin, lead, antimony, bismuth, rare earth metal or the oxide of these metal alloys.Perhaps the following of laminated film is the metal fluoride film, is the single or multiple lift semiconductive thin film above.The fluoride that described metal fluoride film is lithium, sodium, magnesium, calcium, strontium, barium, aluminum metal or the fluoride of their alloys.Fig. 5 is a kind of simpler cathode base structure.Wherein the grid of column electrode and triple-pole type thin-film transistor is an electrode altogether, and the insulating barrier between buffer layer, grid and the source drain between column electrode and the ground electrode row electrode is also shared.
Conductor in the above-mentioned diarch membrane field emission cathode in the electrical conductivity emission layer or semiconductive thin film are actually a kind of film that is in discontinuous state, when passing through bigger electric current, its thin zone will be blown the very little slit of formation, the electronics that conducts in the film emits some from this, form emission current, and under the effect of anode high voltage, arriving anode substrate, the impact fluorescence powder is luminous.
Fig. 5 is the structural representation of another kind of cathode base embodiment provided by the invention.Contain cathode base, anode substrate, sealing structure 18 and supporting construction 17, described cathode base comprises cathode base glass 30, is arranged on the diarch membrane field emission cathode between cathode base column electrode on glass 31, row electrode 32 and the row, column electrode, and this diarch field membrane field emission cathode is made up of electron injection electrode 34, electronics extraction electrode 35 and the electrical conductivity emission layer 36 between them; Described anode substrate comprises anode substrate glass 10, is arranged on anode substrate red fluorescence powder on glass 11, red fluorescence powder 12, fluorescent material 13, black matrix 14 and aluminium film anode 15, it is characterized in that: also comprise the ground electrode 33 and the triple-pole type thin-film transistor that be arranged in parallel with row electrode 32 on the described cathode base; Described diarch membrane field emission cathode is connected with the triple-pole type thin-film transistor, be arranged between row electrode and the ground electrode, described triple-pole type thin-film transistor is by grid, source electrode 38, drain electrode 39, insulating barrier 310 and the semiconductive thin film on this insulating barrier 311 between plane, grid place and source electrode, the drain electrode plane, place constitute, and described 31 whiles of column electrode are as grid; Described 310 whiles of insulating barrier are as the buffer layer on the crosspoint between electrode and the electrode; Wherein said source electrode 38 is connected with ground electrode 33, and described drain electrode 39 is connected with electron injection electrode 34, and described electronics extraction electrode 35 is connected with row electrode 32.
The type of drive of the thin film field emission display device of thin-film transistor control is: the addressing control signal is added on the column electrode, determines whether this row is lighted.The brightness control signal of pixel is added on the row electrode, determines the brightness size of this pixel.Brightness control signal can be an am signals, also can be pulse-width control signal.
The operation principle of the thin film field emission display device of the thin-film transistor control among the present invention is as follows: the addressing signal is added on the column electrode, and brightness control signal is added on the row electrode.For non-selected line, row electrode voltage is zero or is negative that grid in the triple-pole type thin-film transistor is in electronegative potential, and device ends, and does not have electronics to pass through between source electrode and the drain electrode, is emitted as zero.For selected line, column electrode adds positive voltage, and the grid in the triple-pole type thin-film transistor is in positive potential, and transistor is in conducting state.Flow through the diarch membrane field emission cathode from the luminance signal of the row electrode thin-film transistor by conducting, after electric current surpasses certain value, thin part will be blown in the electrical conductivity emission film, form a very little slit, the part conduction electron will emit, arrive anode substrate under the anode high voltage effect, the impact fluorescence powder is luminous.Because the electric current from the row electrode flows directly into ground electrode in parallel, rather than Paying Bank's electrode, the electric current of these electrodes of therefore flowing through is the electric current of a pixel, and its value is no more than 1 milliampere.And the electric current in the column electrode is very little capacity current, can ignore substantially.The present invention has thoroughly solved the capable electric current problems of too in the general surface conduction emission demonstration.Adopt the present invention, even emissivity is reduced to below 1%, also fully can operate as normal, reach the requirement that high-performance shows.And the reduction of emissivity often is accompanied by stable inhomogeneity raising, and it is better that device performance will become.
Be in vacuum state when the present invention works, need exhaust and vacuum to keep parts, these all are that this field professional knows, and do not need special statement.
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are silicon nitride.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Depositing zinc oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 30 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Deposition layer of metal tin thin film between the electron injection electrode of diarch membrane field emission cathode and electronics extraction electrode, deposition are that underlayer temperature is 180 degree, under 350 degree tin are carried out thermal oxidation, evaporate one deck carbon film more thereon.Tin oxide and carbon film constitute thin film electronic conduction emission layer 36, and electrode resistance is controlled at about 5 kilohms.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish three primary colors fluorescent powder, last deposition of aluminum film 15.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 2
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are tantalum pentoxide.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Deposition indium oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 10 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Deposition layer of metal indium film between the electron injection electrode of diarch membrane field emission cathode and electronics extraction electrode, deposition are that underlayer temperature is 180 degree, under 300 degree indium are carried out thermal oxidation, evaporate one deck carbon film more thereon.Indium oxide and carbon film constitute thin film electronic conduction emission layer 36, and electrode resistance is controlled at about 5 kilohms.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 3
Elder generation makes cathode base, cleans cathode base glass 30 with conventional cleaning procedure, at making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 (while is as the grid 37 of triple-pole type thin-film transistor), once finishes.Depositing insulating layer 310, material are silicon nitride.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Depositing zinc oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 30 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Deposition layer of metal tin thin film between the electron injection electrode of diarch membrane field emission cathode and electronics extraction electrode, deposition are that underlayer temperature is 180 degree, under 350 degree tin are carried out thermal oxidation, evaporate one deck carbon film more thereon.Tin oxide and carbon film constitute thin film electronic conduction emission layer 36, and electrode resistance is controlled at about 5 kilohms.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 4
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are silicon nitride.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Electrical conductivity emission layer in the making diarch membrane field emission cathode between electron injection electrode and the electronics extraction electrode, deposit the layer of metal bismuth thin film earlier, deposition is that underlayer temperature is 180 degree, under 300 degree bismuth is carried out thermal oxidation, evaporates one deck carbon film more thereon.Bismuth oxide and carbon film constitute thin film electronic conduction emission layer 36, and electrode resistance is controlled at about 5 kilohms.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Depositing zinc oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 30 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 5
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are tantalum pentoxide.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Electrical conductivity emission layer in the making diarch membrane field emission cathode between electron injection electrode and the electronics extraction electrode, deposit the layer of metal magnesium film earlier, deposition is that underlayer temperature is 200 degree, under 400 degree magnesium is carried out thermal oxidation, evaporates one deck carbon film more thereon.Magnesium oxide and carbon film constitute thin film electronic conduction emission layer 36, and electrode resistance is controlled at about 5 kilohms.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Depositing zinc oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 30 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 6
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are silicon nitride.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Depositing zinc oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 30 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Deposition one deck carbon film between the electron injection electrode of diarch membrane field emission cathode and electronics extraction electrode.Carbon film constitutes thin film electronic conduction emission layer 36, and electrode resistance is controlled at about 5 kilohms.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 7
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are silicon nitride.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Depositing zinc oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 30 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Deposition one deck indium is oxidized to indium oxide film with it under 300 degree conditions between the electron injection electrode of diarch membrane field emission cathode and electronics extraction electrode, and indium oxide film constitutes thin film electronic conduction emission layer 36, and electrode resistance is controlled at about 5 kilohms.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 8
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are silicon nitride.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Depositing zinc oxide semiconductive thin film 311 between triple-pole type thin-film transistor source-drain electrode, about thickness 30 nanometers, resistance is the megaohm magnitude between the source-drain electrode.Sputtering sedimentation one deck zinc oxide semiconductor thin film between the electron injection electrode of diarch membrane field emission cathode and electronics extraction electrode, as thin film electronic conduction emission layer 36, electrode resistance is controlled at about 5 kilohms.Through said process, cathode base completes.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 9
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are silicon nitride.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Depositing zinc oxide semiconductive thin film 311 on the position between the triple-pole type thin-film transistor source-drain electrode is about thickness 30 nanometers.The laminated film of depositing fluorinated calcium and carbon is as thin film electronic conduction emission layer 36 on the position of diarch membrane field emission cathode.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Through said process, cathode base completes.Resistance is the megaohm magnitude between the source-drain electrode of triple-pole type thin-film transistor, and the resistance between the diarch membrane field emission cathode electrode is a kilo-ohm magnitude.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Make cathode base earlier, clean cathode base glass 30,, once finish at the grid 37 of making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 and triple-pole type thin-film transistor with conventional cleaning procedure.Depositing insulating layer 310, material are silicon nitride.With the buffer layer 312 between method for printing screen making column electrode and the row electrode ground electrode, material is a low-melting glass.Deposition indium oxide semiconductive thin film 311 on the position between the triple-pole type thin-film transistor source-drain electrode is about thickness 10 nanometers.The laminated film of depositing fluorinated aluminium and carbon is as thin film electronic conduction emission layer 36 on the position of diarch membrane field emission cathode.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Through said process, cathode base completes.Resistance is the megaohm magnitude between the source-drain electrode of triple-pole type thin-film transistor, and the resistance between the diarch membrane field emission cathode electrode is a kilo-ohm magnitude.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
Embodiment 11
Elder generation makes cathode base, cleans cathode base glass 30 with conventional cleaning procedure, at making chromium-copper on glass-chromium (Cr-Cu-Cr) column electrode 31 (while is as the grid 37 of triple-pole type thin-film transistor).Depositing insulating layer 310, material are silicon nitride.Deposition tin oxide semiconductor film 311 on the position between the triple-pole type thin-film transistor source-drain electrode is about thickness 10 nanometers.The laminated film of depositing fluorinated barium and carbon is as thin film electronic conduction emission layer 36 on the position of diarch membrane field emission cathode.Make the source electrode 38 of Cr-Cu-Cr row electrode 32, ground electrode 33, triple-pole type thin-film transistor and drain 39, the electron injection electrode 34 in the diarch membrane field emission cathode, electronics extraction electrode 35 etc., once finish.Through said process, cathode base completes.Resistance is the megaohm magnitude between the source-drain electrode of triple-pole type thin-film transistor, and the resistance between the diarch membrane field emission cathode electrode is a kilo-ohm magnitude.The manufacturing process of anode substrate is as follows: anode purge base plate glass 10, make graphite black matrix 14 with conventional method earlier, and republish the last deposition of aluminum film 15 of three primary colors fluorescent powder.With cathode base, anode substrate, sealing structure 18 usefulness frit seals together, each emitting cathode point is corresponding with fluorescent material point.Supporting construction 17 is parallel with the row drive electrode, and is vertical with display plane, is arranged between cathode base glass and the anode glass substrate.The device that said method obtains is through after exhaust and toasting, and the sealed-off exhaust station is finished whole technical process.This device is connected on the drive circuit system, add positive voltage on the selected line, make the thin-film transistor conducting in this row, feed positive current pulses from the row electrode, after burning the partially conductive passage that respectively conducts electricity in the thin film electronic conduction emission layer in the diarch membrane field emission cathode between the island, produce the electronics emission.This display can show dynamic image.
The present invention adopts ranks matrix electrodes Drive Structure, and wherein the ranks drive electrode can adopt metal film electrode, the metal thick membrane electrode that also can adopt the printing of silver slurry to obtain, and this will determine according to screen size.During the small screen, the electrode resistance that needs can be bigger, generally can adopt membrane electrode, as chromium-copper-chromium electrode.When screen is big, need drive electrode resistance less, thick membrane electrode is more suitable.
Electrode material in the membrane field emission cathode can adopt the stable metal of any chemical property.Because this membrane electrode can be very thin, generally needs ten nanometers just, therefore can adopt precious metal material, as gold, platinum, iridium etc.Can oxidation in this class material processed process, technology can be simpler.Electrode material also can adopt oxide semiconductor, and as tin indium oxide, Al-Doped ZnO, zinc oxide, indium oxide etc., there is not problem of oxidation in material yet here.
On the anode glass substrate of thin film field emission display device, adopting primary colours fluorescent material parallel construction for each pixel, is the black matrix matrix between them, is covered with anode aluminium film on the fluorescent material.Primary colours fluorescent material powder point is corresponding one by one with field-transmitting cathode on the cathode glass substrate.
Claims (7)
1. the thin film field emission display device of thin-film transistor control, contain cathode base, anode substrate, sealing structure (18) and supporting construction (17), described cathode base comprises cathode base glass (30), be arranged on cathode base column electrode on glass (31), row electrode (32), buffer layer between electrode and the electrode on the crosspoint (312) and row, diarch membrane field emission cathode between the row electrode, this diarch membrane field emission cathode is by electron injection electrode (34), electronics extraction electrode (35) and the electrical conductivity emission layer (36) between them are formed; Described anode substrate comprises anode substrate glass (10), is arranged on anode substrate three primary colors fluorescent powder on glass (11,12,13), black matrix (14) and aluminium film anode (15), it is characterized in that: also comprise the ground electrode (33) and the triple-pole type thin-film transistor that be arranged in parallel with row electrode (32) on the described cathode base; Described diarch membrane field emission cathode is connected with the triple-pole type thin-film transistor, be arranged between row electrode and the ground electrode, described triple-pole type thin-film transistor is by grid (37), source electrode (38), drain electrode (39), plane, grid place and source electrode, insulating barrier (310) and the semiconductive thin film (311) on this insulating barrier between the drain electrode plane, place constitute, wherein said source electrode (38) is connected with ground electrode (33), described grid (37) is connected with column electrode (31), described drain electrode (39) is connected with electron injection electrode (34), and described electronics extraction electrode (35) is connected with row electrode (32).
2. the thin film field emission display device of thin-film transistor control according to claim 1 is characterized in that: described electrical conductivity emission layer adopts the single or multiple lift semiconductive thin film to constitute.
3. the thin film field emission display device of thin-film transistor control according to claim 1, it is characterized in that: described electrical conductivity emission layer is to be made of laminated film, being the metal-oxide film of metallic film through peroxidating formation below, is the single or multiple lift semiconductive thin film above.
4. the thin film field emission display device of thin-film transistor control according to claim 3, it is characterized in that: the metal-oxide film of the following one deck in the described laminated film is the oxide of zinc, cadmium, magnesium, aluminium, gallium, indium, tin, lead, antimony, bismuth, rare earth metal or the oxide of these metal alloys.
5. the thin film field emission display device of thin-film transistor control according to claim 1, it is characterized in that: described electrical conductivity emission layer is to be made of laminated film, is the metal fluoride film below, is the single or multiple lift semiconductive thin film above.
6. the thin film field emission display device of thin-film transistor control according to claim 5 is characterized in that: the fluoride that the following layer of metal fluoride film in the laminated film of described electrical conductivity emission layer is lithium, sodium, magnesium, calcium, strontium, barium, aluminum metal or the fluoride of their alloys.
7. the thin film field emission display device of thin-film transistor control, contain cathode base, anode substrate, sealing structure (18) and supporting construction (17), described cathode base comprises cathode base glass (30), is arranged on the diarch membrane field emission cathode between cathode base column electrode on glass (31), row electrode (32) and the row, column electrode, and this diarch membrane field emission cathode is made up of electron injection electrode (34), electronics extraction electrode (35) and the electrical conductivity emission layer (36) between them; Described anode substrate comprises anode substrate glass (10), is arranged on anode substrate three primary colors fluorescent powder on glass (11,12,13), black matrix (14) and aluminium film anode (15), it is characterized in that: also comprise the ground electrode (33) and the triple-pole type thin-film transistor that be arranged in parallel with row electrode (32) on the described cathode base; Described diarch membrane field emission cathode is connected with the triple-pole type thin-film transistor, be arranged between row electrode and the ground electrode, described triple-pole type thin-film transistor is by grid, source electrode (38), drain electrode (39), insulating barrier (310) and the semiconductive thin film (311) on this insulating barrier between plane, grid place and source electrode, the drain electrode plane, place constitute, and described column electrode (31) is simultaneously as grid; Described insulating barrier (310) is simultaneously as the buffer layer on the crosspoint between electrode and the electrode; Wherein said source electrode (38) is connected with ground electrode (33), and described drain electrode (39) is connected with electron injection electrode (34), and described electronics extraction electrode (35) is connected with row electrode (32).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100896217A CN100452284C (en) | 2006-07-07 | 2006-07-07 | Thin film transistor controlled thin film field emission display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100896217A CN100452284C (en) | 2006-07-07 | 2006-07-07 | Thin film transistor controlled thin film field emission display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1885483A CN1885483A (en) | 2006-12-27 |
| CN100452284C true CN100452284C (en) | 2009-01-14 |
Family
ID=37583578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100896217A Expired - Fee Related CN100452284C (en) | 2006-07-07 | 2006-07-07 | Thin film transistor controlled thin film field emission display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100452284C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109323784B (en) * | 2018-09-21 | 2020-07-10 | 浙江大学 | Piezoresistive flexible touch sensor with double-layer buckle type micro-boss |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1558441A (en) * | 2004-01-16 | 2004-12-29 | 清华大学 | Method for preparing carbon nanotube on glass substrates |
| JP2005222074A (en) * | 2005-03-22 | 2005-08-18 | Hitachi Ltd | Image display device |
| CN1773664A (en) * | 2005-09-09 | 2006-05-17 | 清华大学 | Thin film field emitting display device and method for producing its field emission cathode |
-
2006
- 2006-07-07 CN CNB2006100896217A patent/CN100452284C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1558441A (en) * | 2004-01-16 | 2004-12-29 | 清华大学 | Method for preparing carbon nanotube on glass substrates |
| JP2005222074A (en) * | 2005-03-22 | 2005-08-18 | Hitachi Ltd | Image display device |
| CN1773664A (en) * | 2005-09-09 | 2006-05-17 | 清华大学 | Thin film field emitting display device and method for producing its field emission cathode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1885483A (en) | 2006-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4185002B2 (en) | EL display element | |
| CN100372047C (en) | Thin film field emitting display device and method for producing its field emission cathode | |
| KR20040010026A (en) | Field emission display | |
| US20070222394A1 (en) | Black matrix for flat panel field emission displays | |
| JP2010123338A (en) | Image display apparatus | |
| CN104466021B (en) | AMOLED device architectures and its manufacture method | |
| CN102097272B (en) | Triode structured field emission display (FED) with anode and grid on same substrate | |
| US8803413B2 (en) | Symmetric quadrupole structured field emission display without spacer | |
| CN204087144U (en) | Touch structure of organic light emitting diode display panel | |
| US7327080B2 (en) | Hybrid active matrix thin-film transistor display | |
| CN100452284C (en) | Thin film transistor controlled thin film field emission display device | |
| CN102017051A (en) | Under-gate field emission triode with charge dissipation layer | |
| Fennimore et al. | A stable under-gate triode CNT field emitter fabricated via screen printing | |
| WO2006102796A1 (en) | A field emission display having multi-layer structure | |
| CN101872706B (en) | Manufacture method of surface-conduction electron-emitting source of SED (Surface-conduction Electron-emitter Display) | |
| CN100418181C (en) | Grid controlled thin film field emission display device | |
| Busta | Field emission flat panel displays | |
| US7405711B2 (en) | Fixed-pixel display device and cold cathode field electron emission display device | |
| CN100428396C (en) | Thin film cathode field emission display device based on porous aluminium oxide structure | |
| CN106057862B (en) | High-brightness OLED display | |
| CN100477066C (en) | Cathode structure of back grid field emitting display and preparing method thereof | |
| CN101206988A (en) | Surface-conduction-electron emission display improvement structure | |
| CN202473820U (en) | Carbon nanotube field emission array with focusing grid electrode | |
| US8223101B1 (en) | Active matrix phosphor cold cathode display | |
| KR101071882B1 (en) | Field emission device comprising anode with conductive film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20110707 |