CN103137245B - The transparent conductive film and its manufacturing method, an electronic device - Google Patents

The transparent conductive film and its manufacturing method, an electronic device Download PDF

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Publication number
CN103137245B
CN103137245B CN 201110386140 CN201110386140A CN103137245B CN 103137245 B CN103137245 B CN 103137245B CN 201110386140 CN201110386140 CN 201110386140 CN 201110386140 A CN201110386140 A CN 201110386140A CN 103137245 B CN103137245 B CN 103137245B
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layer
porous dielectric
dielectric layer
substrate
conductive film
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CN 201110386140
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CN103137245A (en )
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赖思维
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群康科技(深圳)有限公司
群创光电股份有限公司
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Abstract

本发明公开一种透明导电膜及其制造方法和应用它的电子装置。 The present invention discloses a method of manufacturing the transparent conductive film and applying it to the electronic device. 该透明导电膜包括导电层及多孔性介电层。 The transparent conductive film comprising a conductive layer and the porous dielectric layer. 多孔性介电层设置于导电层上。 The porous dielectric layer disposed on the conductive layer.

Description

透明导电膜及其制造方法、电子装置 The transparent conductive film and its manufacturing method, an electronic device

技术领域 FIELD

[0001] 本发明涉及一种导电膜及及其制造方法、电子装置,且特别是涉及一种透明导电膜及应用它的电子装置。 [0001] The present invention relates to a conductive film and its manufacturing method, an electronic device, and more particularly to a transparent conductive film and applying it to the electronic device.

背景技术 Background technique

[0002] 随着显示技术及触控技术的进步,各式显示装置及触控装置不断推陈出新。 [0002] As technology advances and the touch display technology, various types of display apparatus and a touch device innovation. 为了达到良好的画面显示效果,显示装置及触控装置通常会采用透明导电膜来作为驱动电极或参考电极。 In order to achieve a good screen display, a display device and a touch device using a transparent conductive film is generally used as a drive electrode or a reference electrode.

[0003] 在广泛应用透明导电膜的同时,研宄人员发现透明导电膜经常会产生反光或炫光的现象,造成使用者观看画面的不舒服,严重影响产品的品质。 [0003] While the transparent conductive film is widely used in a Subsidiary found that the transparent conductive film often produce glare or reflection phenomenon, causing the user to view the screen uncomfortable, seriously affecting the quality of the product.

[0004] 因此,如何研发出一种透明导电膜,使其具有抗反射或防炫光的效果,实为目前技术发展的重要方向。 [0004] Therefore, how to develop a transparent conductive film to have anti-glare or anti-reflection effect, and in fact the important direction of current technology.

发明内容 SUMMARY

[0005] 本发明涉及一种透明导电膜及应用它的电子装置,其利用多孔性介电层来降低全反射比率并使外界光线散射,使得透明导电膜具有抗反射或防炫光的效果。 [0005] The present invention relates to a transparent conductive film and applying it to the electronic apparatus, which uses a porous dielectric layer to reduce the total reflection ratio of external light and scattered, so that the transparent conductive film having an antireflection effect or anti-glare.

[0006] 根据本发明的一方面,提出一种透明导电膜。 [0006] According to an aspect of the present invention, a transparent conductive film. 透明导电膜包括导电层及多孔性介电层(porous dielectric layer)。 The transparent conductive film comprising a conductive layer and a porous dielectric layer (porous dielectric layer). 多孔性介电层设置于导电层上。 The porous dielectric layer disposed on the conductive layer.

[0007] 根据本发明的另一方面,提出一种电子装置。 [0007] According to another aspect of the present invention, an electronic device. 电子装置包括第一基板、透明导电膜及第二基板。 The electronic device includes a first substrate, a transparent conductive film and the second substrate. 透明导电膜设置于第一基板上。 The transparent conductive film is disposed on the first substrate. 透明导电膜包括导电层及多孔性介电层(porous dielectric layer)。 The transparent conductive film comprising a conductive layer and a porous dielectric layer (porous dielectric layer). 多孔性介电层设置于导电层上。 The porous dielectric layer disposed on the conductive layer. 第二基板平行于第一基板。 A second substrate parallel to the first substrate.

[0008] 为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合附图,作详细说明如下: [0008] In order to make the above-described present invention can be more fully understood, the following preferred non-limiting embodiment and the accompanying drawings, described in detail below:

附图说明 BRIEF DESCRIPTION

[0009] 图1绘示第一实施例的透明导电膜的示意图。 [0009] FIG. 1 shows a schematic view of a transparent conductive film according to the first embodiment.

[0010] 图2绘示多孔性介电层的立体图。 [0010] FIG depicts a perspective view of the porous dielectric layer 2.

[0011] 图3A〜3D绘示透明导电膜的制造方法的流程图。 [0011] FIG 3A~3D schematic flowchart of a method for producing a transparent conductive film shown.

[0012] 图4绘示第二实施例的透明导电膜的示意图。 [0012] FIG. 4 illustrates a second embodiment of the transparent conductive film of the embodiment shown.

[0013] 图5绘示第三实施例的透明导电膜的示意图。 [0013] FIG. 5 shows a schematic view of a transparent conductive film according to a third embodiment.

[0014] 图6绘示第四实施例的电子装置的示意图。 [0014] FIG. 6 is a schematic diagram of an electronic apparatus of the fourth embodiment shown.

[0015] 图7绘示第五实施例的电子装置的示意图。 [0015] FIG. 7 is a schematic diagram of an electronic device according to the fifth embodiment shown.

[0016] 图8绘示第六实施例的电子装置的示意图。 [0016] FIG. 8 is a schematic view of a sixth embodiment of the electronic apparatus of the embodiment shown.

[0017] 附图标记说明 [0017] REFERENCE NUMERALS

[0018] 100、200、300、4200、5200、5400、6200:透明导电膜 [0018] 100,200,300,4200,5200,5400,6200: transparent conductive film

[0019] 110、210、310、4210、5210、5410、6210:导电层 [0019] 110,210,310,4210,5210,5410,6210: conductive layer

[0020] 120、220、320、4220、5220、5420、6220:多孔性介电层 [0020] 120,220,320,4220,5220,5420,6220: porous dielectric layer

[0021] 120,:金属层 [0021] The metal layer 120 ,:

[0022] 121:空心孔 [0022] 121: hollow bore

[0023] 130、230、330:基板 [0023] 130, 230: substrate

[0024] 222:团聚块 [0024] 222: agglomerated block

[0025] 4000、5000、6000:电子装置 [0025] 4000,5000,6000: the electronic device

[0026] 4100,5100,6100:第一基板 [0026] 4100,5100,6100: a first substrate

[0027] 4300,5300,6300:第二基板 [0027] 4300,5300,6300: a second substrate

[0028] 4410,4420:透明感应膜 [0028] 4410,4420: transparent sensing membrane

[0029] 4500、5500:保护板 [0029] 4500,5500: protective plate

[0030] 6400:像素电极膜 [0030] 6400: a pixel electrode film

[0031] 6500:电泳结构层 [0031] 6500: electrophoretic layer structure

[0032] 6600:保护层 [0032] 6600: protective layer

[0033] 6700:透明光学胶 [0033] 6700: a transparent optical adhesive

[0034] D120:厚度 [0034] D120: thickness

[0035] D222:直径 [0035] D222: Diameter

[0036] G:间隙 [0036] G: gap

具体实施方式 Detailed ways

[0037] 以下提出实施例进行详细说明,其利用多孔性介电层来降低全反射比率并使外界光线散射,使得透明导电膜具有抗反射或防炫光的效果。 [0037] The following presents a detailed description of embodiments, which utilize the porous dielectric layer to reduce the ratio of total reflection and scattering of the external light, so that the transparent conductive film has the anti-glare or anti-reflection effect. 然而,实施例仅用以作为范例说明,并不会限制本发明欲保护的范围。 However, embodiments are only for illustrative, not limiting the scope of protection of the invention. 此外,实施例中的附图省略部分元件,以清楚显示本发明的技术特点。 Moreover, the drawings omit some of the elements in this embodiment, in order to highlight the technical features of the invention.

[0038] 第一实施例 [0038] First embodiment

[0039] 请参照图1〜2,图1绘示第一实施例的透明导电膜100的示意图,图2绘示多孔性介电层(porous dielectric layer) 120的立体图。 [0039] Referring to FIG 1 to 2, FIG. 1 illustrates a schematic view 100 of a transparent conductive film of the first embodiment, FIG 2 shows a perspective view of a porous dielectric layer (porous dielectric layer) 120 a. 透明导电膜100包括导电层110及多孔性介电层120。 The transparent conductive film 100 includes a conductive layer 110 and the porous dielectric layer 120. 导电层110为透明状且具有导电性,例如是铟锡氧化物(indium tinoxide, ITO)或铟锌氧化物(indium zinc oxide,IZO)。 Conductive layer 110 is transparent and has electrical conductivity, such as indium tin oxide (indium tinoxide, ITO) or indium zinc oxide (indium zinc oxide, IZO). 此类型的导电层110可应用于显示面板及触控面板。 This type conductive layer 110 may be applied to a display panel and a touch panel.

[0040] 多孔性介电层120设置于导电层110上,多孔性介电层120的材料例如是氧化铝。 [0040] The porous dielectric layer 120 disposed on the conductive layer 110, the material of the porous dielectric layer 120, for example, alumina. 多孔性介电层120具有多个空心孔121,该多个空心孔121可以是不规则分布或者是规则分布的。 The porous dielectric layer 120 having a plurality of hollow bore 121, the plurality of hollow holes 121 may be irregularly distributed or regularly distributed.

[0041] 氧化铝的折射率为1.76,空心孔121内的空气的折射率为1.0,因此多孔性介电层120的等效折射率将介于1.0至1.76之间。 Refractive index [0041] The alumina is 1.76, the refractive index of air in the hollow hole 121 is 1.0, so the equivalent refractive index of the porous dielectric layer 120 will be between 1.0 to 1.76. 调整多孔性介电层120的空心孔121的数量或大小可以调整多孔性介电层120的等效折射率。 Adjustment of the porous dielectric layer 120 of the hollow hole 121 of the number or size to adjust the equivalent refractive index of the porous dielectric layer 120.

[0042] 导电层110以铟锡氧化物(ITO)为例时,其折射率为1.8〜2.1。 [0042] When the conductive layer 110 of indium tin oxide (ITO), for example, a refractive index of 1.8~2.1. 外界光线穿越透明导电膜100时,依序经过折射率为1.0的空气、折射率为1.0至1.76的多孔性介电层120及折射率为1.8〜2.1的导电层110,因此大部分的光线将被折射,进而有效地降低光线全反射的比率,达到抗反射的效果。 When the outside light 100 through the transparent conductive film, a refractive index of air sequentially through 1.0, the refractive index of the porous dielectric layer 120 of 1.0 to 1.76 and a refractive index of the conductive layer 110 is 1.8~2.1, and therefore most of the light will It is refracted, thus effectively reducing the ratio of total reflection of light, to achieve the anti-reflection effect.

[0043] 此外,调整多孔性介电层120的厚度D120,也可获得不同的折射效果,以进一步调整抗反射的效果。 [0043] In addition, adjusting the thickness of the porous dielectric layer D120 120 of different refraction effect can be obtained to further adjust the antireflection effect. 在本实施例中,多孔性介电层120的厚度D120为80〜120纳米(nm)。 In the present embodiment, the thickness D120 porous dielectric layer 120 is 80~120 nanometers (nm).

[0044] 以下更进一步以流程图说明如何于导电层110上形成多孔性介电层120。 [0044] In the following further exemplary flowchart illustrating how to form a porous dielectric layer 120 on the conductive layer 110. 请参照图3A〜3D,其绘示透明导电膜100的制造方法的流程图。 Referring to FIG 3A~3D, a flowchart of a method of producing a transparent conductive film 100 which illustrates. 首先,在图3A中,提供基板130,基板130例如是硬镀膜(HC PET)。 First, in FIG. 3A, a substrate 130, substrate 130, for example, a hard coating (HC PET).

[0045] 接着,如图3B所示,形成导电层110于基板130上。 [0045] Next, as shown in FIG. 3B, the conductive layer 110 is formed on the substrate 130. 导电层110例如是采用凝胶法、磁控溅射法来形成于基板130上。 Conductive layer 110 is a gel method, a magnetron sputtering method is formed on the substrate 130. 在实施例中,导电层110亦可于此步骤进行图案化工 In an embodiment, the conductive layer 110 can be patterned using step thereto

-H- -H-

O O

[0046] 然后,如图3C所示,形成金属层120'于导电层110上。 [0046] Then, as shown in FIG. 3C, the metal layer is formed 'on the conductive layer to 110,120. 金属层120'例如是采用电镀、溅镀的方式形成于导电层110上。 Metal layer 120 ', for example, by plating, sputtering is formed on the conductive layer 110. 在本实施例中,金属层120'的材料为铝(Al)。 In the present embodiment, the material of the metal layer 120 'is made of aluminum (Al).

[0047] 接着,如图3D所示,以导电层110为阳极,阳极氧化(anodic oxidat1n)金属层120',以形成多孔性介电层120。 [0047] Next, as shown in FIG. 3D, a conductive layer 110 is an anode, the anodic oxidation (anodic oxidat1n) metal layer 120 'to form porous dielectric layer 120. 阳极氧化为一种电化学反应,在合适的电解液中,透过导电层110将金属层120'当作阳极,石墨棒作为阴极。 The reaction is an electrochemical anodization in a suitable electrolyte, the conductive layer 110 through the metal layer 120 'as an anode, a graphite rod as the cathode. 电解液则提供氧离子使阳极的金属层120'形成多孔性介电层120,同时伴随氢气在阴极生成。 Electrolyte oxygen ions provides an anode metal layer 120 'is formed of the porous dielectric layer 120, accompanied by the hydrogen produced at the cathode.

[0048] 在此步骤中,适当的控制电流大小、反应时间、电解液浓度、电解液成分等可以有效控制多孔性介电层120的空心孔121 (绘示于图2)的大小与数量。 [0048] In this step, an appropriate control current magnitude, the reaction time, the electrolyte concentration, electrolyte composition and other hollow bore 121 can effectively control the porous dielectric layer 120 (shown in FIG. 2) of size and number.

[0049] 如上所述,本实施例的多孔性介电层120并不是透过额外贴附膜的方式来形成,而是在导电层110上透过阳极氧化的方式来直接形成多孔性介电层120,其工艺复杂度低、材料成本可大幅降低、且厚度亦可大幅降低。 [0049] As described above, the porous dielectric layer 120 of the present embodiment is not attached to an additional embodiment is formed through the membrane, but directly to form a porous dielectric permeates through anodic oxidation on the conductive layer 110 layer 120, low complexity of the process, the material cost can be greatly reduced, and the thickness can be greatly reduced.

[0050] 此外,本实施例的多孔性介电层120也不是透过涂布颗粒状结构的方式来形成,而是在导电层I1上直接形成一体成型的多孔性介电层120。 [0050] Further, the present embodiment of the porous dielectric layer 120 is not formed through embodiment granular structure is applied, but the formation of the porous dielectric layer 120 is integrally formed directly on the conductive layer I1. 相较于颗粒状结构,一体成型的多孔性介电层120与导电层110的结合面积较大,因此与导电层110的结合强度相当的尚O Compared to a granular structure, porous dielectric layer 120 integrally formed in connection with a large area of ​​the conductive layer 110, and thus the bonding strength of the conductive layer 110 is still fairly O

[0051] 此外,相较于颗粒状结构,一体成型的多孔性介电层120不容易散开或裂开,因此多孔性介电层120的内部结合力相当的高。 [0051] In addition, compared to the particulate structure, a porous dielectric layer 120 is integrally formed or cracking is not easily spread, the internal bonding strength of the porous dielectric layer 120 is relatively high.

[0052] 综上所述,本实施例的透明导电膜100利用多孔性介电层120来降低全反射比率,使得透明导电膜100具有抗反射的效果。 [0052] In summary, the embodiment of the transparent conductive film 100 of the present embodiment using a porous dielectric layer 120 to reduce the ratio of the total reflection, so that the transparent conductive film 100 having an antireflection effect. 并且本实施例的透明导电膜100的制造方法透过阳极氧化的方式来形成多孔性介电层120,使得结合强度增加、工艺复杂度降低、材料成本降低且厚度也可降低。 And the transparent conductive film of the present embodiment of the manufacturing method of embodiment 100 to form a porous dielectric layer 120 through an anode oxidation, such that binding strength is increased, reducing the process complexity, thickness and material costs can be reduced.

[0053] 第二实施例 [0053] Second Embodiment

[0054] 请参照图4,其绘示第二实施例的透明导电膜200的示意图。 [0054] Referring to FIG 4, which illustrates a schematic diagram 200 of a transparent conductive film of the second embodiment. 本实施例的透明导电膜200与第一实施例的透明导电膜100不同之处在于多孔性介电层220,其余相同之处不再重复叙述。 The transparent conductive film according to the present embodiment of the transparent conductive film 200 of the first embodiment is different from embodiment 100 in that the porous dielectric layer 220, the similarities are not repeated here.

[0055] 如图4所示,本实施例的多孔性介电层220包括多个团聚块222。 [0055] As shown in FIG. 4, porous dielectric layer 220 of the present embodiment comprises a plurality of agglomerated block 222. 各个团聚块222间隔间隙G。 A gap spacer blocks 222 each agglomerate G. 该多个团聚块222整面地形成于导电层210及基板230之上。 The plurality of agglomerated block 222 is formed on the entire surface over the conductive layer 210 and the substrate 230. 每一团聚块222的内部含有多个空心孔洞。 Within each block 222 contains a plurality of agglomerated hollow holes. 团聚块222的尺寸相当的微小,在本实施例中,团聚块222的直径D222为I〜8微米(um)。 Agglomerated block 222 corresponding to the size of the minute, in the present embodiment, the agglomerate diameter D222 is I~8 block 222 microns (um). 适当地控制阳极氧化的电流大小、反应时间、电解液浓度、电解液成分可以有效地控制团聚块222的尺寸。 Appropriately control the current magnitude of the anodic oxidation, the reaction time, the electrolyte concentration, electrolyte composition can be effectively controlled agglomerate size of the block 222.

[0056] 外界光线射入团聚块222或射入间隙G将产生不同的散射效果。 [0056] external light is incident on the incident agglomerated block 222 or the gap G will produce different scattering effect. 因此,外界光线进入透明导电膜200时,炫光的现象可以有效的减少。 Thus, external light entering the transparent conductive film 200, a glare phenomenon can be effectively reduced.

[0057] 第三实施例 [0057] Third embodiment

[0058] 请参照图5,其绘示第三实施例的透明导电膜300的示意图。 [0058] Referring to FIG 5, a schematic view of the transparent conductive film 300 of the third embodiment thereof shown. 本实施例的透明导电膜300与第一实施例的透明导电膜100不同之处在于导电层310及多孔性介电层320为图案化结构,其余相同之处不再重复叙述。 100 is different from the transparent conductive film The transparent conductive film 300 of this embodiment from the first embodiment in that the conductive layer 310 and the porous dielectric layer 320 is a patterned structure, the similarities are not repeated here.

[0059] 如图5所示,本实施例的导电层310为图案化结构。 As shown in [0059] FIG. 5, the conductive layer 310 according to the present embodiment is a patterned structure. 多孔性介电层320可以选择性披覆的方式皆设置于图案化的导电层310上,而没有设置于基板330上,并暴露出部分的基板330的表面。 320 may be selectively coated to the porous dielectric layer embodiment are disposed on the patterned conductive layer 310, and not provided on the substrate 330, substrate 330 and expose the surface portion.

[0060] 以基板330的材料为玻璃为例,玻璃的折射率约为1.5〜1.6。 [0060] In the material for the glass substrate 330 as an example, the refractive index of glass is about 1.5~1.6. 导电层310的折射率则为1.8〜2.1。 The refractive index of the conductive layer 310 was 1.8~2.1. 在基板330与导电层310的折射率差异大的情况下,外界光线进入导电层310与直接进入基板330所产生的反射光强度差异则较大,容易在外观上形成蚀刻痕。 In the large refractive index difference between the substrate 330 and the conductive layer 310, the external light enters directly into the conductive layer 310 and the reflected light intensity difference substrate 330 is generated by a larger, easily etched mark is formed in appearance.

[0061] 本实施例在导电层310上披覆折射率为1.0〜1.76的多孔性介电层320,所以外界光线进入多孔性介电层320与直接进入基板330所产生的反射光强度变得接近,进而使得蚀刻痕变得不明显。 [0061] In the present embodiment, the conductive layer 310 on the cladding refractive index of the porous dielectric layer 320 1.0~1.76, so external light enters the light intensity reflected directly into the substrate 330 and the resulting porous dielectric layer 320 becomes close, thus making the etching marks becomes inconspicuous.

[0062] 第四实施例 [0062] Fourth embodiment

[0063] 请参照图6,其绘示第四实施例的电子装置4000的示意图。 [0063] Referring to FIG 6, a schematic view of a fourth embodiment of an electronic device 4000 which illustrates. 本实施例的电子装置4000可采用第一实施例的透明导电膜100的设计或第二实施例的透明导电膜200的设计。 The electronic device according to the present embodiment is a transparent conductive film 4000 can be designed design embodiment 100 or a transparent conductive film 200 of the second embodiment of the first embodiment. 以下以采用第二实施例的透明导电膜200的设计为例作说明。 In the following design uses a transparent conductive film 200 of the second embodiment explained as an example.

[0064] 本实施例的电子装置4000包括第一基板4100、透明导电膜4200、第二基板4300、二个透明感应膜4410、4420及保护板4500。 The electronic device [0064] 4000 of the present embodiment includes a first substrate 4100, a transparent conductive film 4200, a second substrate 4300, 4410,4420 sensitive film and two transparent protective plate 4500. 透明导电膜4200设置于第一基板4100上。 The transparent conductive film 4200 disposed on the first substrate 4100. 第二基板4300平行于第一基板4100。 A second substrate parallel to the first substrate 4300 4100.

[0065] 透明感应膜4410、4420设置于第二基板4300的相对的二表面上,透明感应膜4410与透明感应膜4420均为线状电极(例如是相互垂直的X轴向电极及Y轴向电极)。 [0065] Transparent 4410,4420 sensitive film disposed on the second surface of the second substrate opposite to 4300, 4410 and 4420 transparent sensing membrane transparent linear electrodes are sensitive membrane (e.g., the X-axis are perpendicular to each electrode and the Y axis electrode). 第二基板4300与透明感应膜4410、4420为触控面板。 The second transparent substrate 4300 with a touch sensitive film 4410,4420 panel. 保护板4500设置于透明导电膜4200外。 Protection plate 4500 is provided on the outer transparent conductive film 4200.

[0066] 透明导电膜4200包括导电层4210及多孔性介电层4220。 [0066] The transparent conductive film 4200 includes a conductive porous layer 4210 and dielectric layer 4220. 导电层4210为屏蔽(shielding)电极。 Shielding conductive layer 4210 (Shielding) electrode. 本实施例的透明导电膜4200采用团聚块的设计,由此同时达到抗反射效果及防炫光的效果。 The transparent conductive film of the present embodiment is designed to use agglomerated block 4200, thereby achieving the effect of anti-glare and anti-reflection effect at the same time.

[0067] 第五实施例 [0067] The fifth embodiment

[0068] 请参照图7,其绘示第五实施例的电子装置5000的示意图。 [0068] Referring to FIG. 7, a schematic view of a fifth embodiment of an electronic device 5000 which illustrates. 本实施例的电子装置可采用第三实施例的透明导电膜300的设计。 The electronic device according to the present embodiment of the transparent conductive film 300 can be designed according to a third embodiment.

[0069] 本实施例的电子装置5000为触控面板,该触控面板例如是薄膜式(Film type)或玻璃式(Glass type)触控面板,其中玻璃式触控面板例如是单面镀膜(Single-sided ITO,SITO)、双面锻膜(Double-sided ITO, DIT0)、触控保护玻璃模块(Window in integratedsensor,HS)。 [0069] The electronic device 5000 of the present embodiment is a touch panel, the touch panel, for example, a thin film of formula (Film type) or a glass type (Glass type) touch panel, wherein the touch panel, for example, a glass-sided film ( Single-sided ITO, SITO), a double-sided film forging (Double-sided ITO, DIT0), the protective glass touch module (Window in integratedsensor, HS). 单面镀膜是指于基板的单一表面形成X及Y电极,双面镀膜是指于基板的相对两个表面分别形成X、Y电极,触控保护玻璃模块则是指直接于保护玻璃的侧面上形成X及Y电极。 Refers to single-sided coating is formed on a single surface of the substrate X and Y electrodes, a double-sided coating refers to the two opposing surfaces of the substrate forming the X, Y electrodes, respectively, the touch protective glass module refers to the side of the cover glass directly X and Y electrodes are formed. 本实施例以薄膜式(Film type)触控面板为例。 In this embodiment, the touch panel thin film (Film type) as an example. 电子装置5000包括第一基板5100、透明导电膜5200、第二基板5300、透明导电膜5400及保护板5500。 The electronic device 5000 includes a first substrate 5100, a transparent conductive film 5200, a second substrate 5300, a transparent conductive film 5400 and the protection plate 5500. 透明导电膜5200设置于第一基板5100上。 The transparent conductive film 5200 disposed on the first substrate 5100. 第二基板5300平行于第一基板5100。 A second substrate parallel to the first substrate 5300 5100. 透明导电膜5400设置于第二基板5300上。 The transparent conductive film 5400 is provided on the second substrate 5300. 保护板5500设置于透明导电膜5200之上。 Protection plate 5500 is disposed on the transparent conductive film 5200.

[0070] 透明导电膜5200、5400分别包括导电层5210、5410及多孔性介电层5220、5420。 [0070] The transparent conductive film comprising a conductive layer, respectively, 5200,5400 and 5210,5410 5220,5420 porous dielectric layer. 导电层5210、5410均为线状电极(例如是相互垂直的X轴向电极及Y轴向电极)。 5210,5410 linear electrode are electrically conductive layer (for example, mutually perpendicular X-axis electrodes and Y-axis electrodes). 本实施例的多孔性介电层5220及5420采用选择性披覆的设计,由此同时达到抗反射效果及避免蚀刻痕的问题。 The porous dielectric layer 5220 and cladding 5420 of selective design of the present embodiment, while achieving an antireflection effect and thereby avoid the problem of etching the marks.

[0071] 在实施例中,可以仅在其中之一导电层5210、5410上方形成多孔性介电层(例如是多孔性介电层5220或者多孔性介电层5420)。 [0071] In an embodiment, which may be formed over only one of the conductive layers 5210,5410 porous dielectric layer (e.g., a porous dielectric layer 5220 or the porous dielectric layer 5420). 也就是说只要至少其中之一导电层5210、5410上方形成有多孔性介电层即不脱离本发明所属技术范围。 That is at least as long as one of the top conductive layer is formed 5210,5410 porous dielectric layer i.e. without departing from the scope of the present invention belongs.

[0072] 第六实施例 [0072] Sixth Example

[0073] 请参照图8,其绘示第六实施例的电子装置6000的示意图。 [0073] Referring to FIG 8, a schematic diagram of the electronic device 6000 of the sixth embodiment thereof shown. 本实施例的电子装置6000可采用第一实施例的透明导电膜100的设计或第二实施例的透明导电膜200的设计。 The electronic device according to the present embodiment is a transparent conductive film 6000 can be designed design embodiment 100 or a transparent conductive film 200 of the second embodiment of the first embodiment. 以下以采用第二实施例的透明导电膜200为例作说明。 In the transparent conductive film 200 of the second embodiment explained as an example.

[0074] 本实施例的电子装置6000为电子纸显不面板。 [0074] The electronic device 6000 of the present embodiment is not significantly panel electronic paper. 电子装置6000包括第一基板6100、透明导电膜6200、第二基板6300、像素电极膜6400、电泳结构层6500、保护层6600及透明光学胶(Optically Clear Adhesive,OCA) 6700。 The electronic device 6000 includes a first substrate 6100, a transparent conductive film 6200, a second substrate 6300, the pixel electrode film 6400, the structure of the electrophoretic layer 6500, the protective layer 6600 and a transparent optical adhesive (Optically Clear Adhesive, OCA) 6700. 透明导电膜6200设置于第一基板6100的一侧,保护层6600及透明光学胶6700设置于第一基板6100的另一侧。 The transparent conductive film 6200 disposed on one side of the first substrate 6100, the protective layer 6600 and transparent optical adhesive 6700 provided on the other side of the first substrate 6100. 透明导电膜6200包括导电层6210及多孔性介电层6220。 The transparent conductive film 6200 includes a conductive porous layer 6210 and dielectric layer 6220. 导电层6210为参考电极。 The conductive layer 6210 as the reference electrode. 第二基板6300平行于第一基板6100。 A second substrate parallel to the first substrate 6300 6100. 像素电极膜6400设置于第二基板6300上。 6400 pixel electrode film disposed on the second substrate 6300. 电泳结构层6500设置于第一基板6100及第二基板6300之间。 Electrophoretic structure layer 6500 disposed between the first substrate 6100 and second substrate 6300. 电泳结构层6500例如是包括多个电泳胶囊或电泳微杯。 6500, for example, an electrophoretic layer structure comprising a plurality of electrophoretic capsules or electrophoretic microcups. 在本实施例中,电泳结构层6500以电泳胶囊为例作说明。 In the present embodiment, the structure of the electrophoretic layer 6500 to be described as an example an electrophoretic capsule.

[0075] 本实施例的多孔性介电层6220采用团聚块的设计,由此同时达到抗反射效果及避免蚀刻痕的问题。 [0075] The porous dielectric layer of the present embodiment employs a design 6220 agglomerated block, thereby achieving an antireflection effect and avoid problems while etching marks.

[0076] 综上所述,虽然本发明已以优选实施例披露如上,然其并非用以限定本发明。 [0076] In summary, although a preferred embodiment of the present invention has been disclosed in the above embodiment, they are not intended to limit the present invention. 本发明所属技术领域中普通技术人员,在不脱离本发明的精神和范围内,当可作各种的更动与润饰。 Skilled in the art of the present invention of ordinary skill in the art, without departing from the spirit and scope of the present invention, it may make various modifications and variations. 因此,本发明的保护范围当视权利要求所界定为准。 Accordingly, the scope of the invention as defined by the following claims and equivalents.

Claims (17)

  1. 1.一种透明导电膜,包括: 导电层;以及多孔性介电层,设置于该导电层上, 其中该多孔性介电层具有多个空心孔, 其中该导电层的折射率为1.8〜2.1, 其中该多孔性介电层的等效折射率介于1.0至1.76之间。 1. A transparent conductive film, comprising: a conductive layer; and a porous dielectric layer disposed on the conductive layer, wherein the porous dielectric layer having a plurality of hollow bore, wherein the refractive index of the conductive layer 1.8~ 2.1, wherein the porous dielectric layer, the equivalent refractive index is between 1.0 to 1.76.
  2. 2.如权利要求1所述的透明导电膜,其中该多孔性介电层的材料为氧化铝。 2. The transparent conductive film according to claim 1, wherein the material of the porous dielectric layer is alumina.
  3. 3.如权利要求1所述的透明导电膜,其中该多孔性介电层包括多个团聚块,各团聚块以间隙间隔,其中该些空心孔包含于所述多个团聚块之中。 The transparent conductive film according to claim 1, wherein the porous dielectric layer comprises a plurality of blocks agglomerates, each agglomerate blocks gap interval, wherein the plurality of holes included in the plurality of hollow agglomerate into blocks.
  4. 4.如权利要求3所述的透明导电膜,其中各团聚块的直径为I〜8微米。 The transparent conductive film as claimed in claim 3 wherein the diameter of each of the blocks is agglomerated I~8 microns.
  5. 5.如权利要求1所述的透明导电膜,其中该多孔性介电层的厚度为80〜120纳米。 The transparent conductive film according to claim 1, wherein said porous dielectric layer having a thickness of 80~120 nm.
  6. 6.如权利要求1所述的透明导电膜,其中该导电层设置于基板上,该导电层为图案化结构,该多孔性介电层皆设置于图案化的该导电层上,并暴露出部分的该基板的表面。 6. The transparent conductive film according to claim 1, wherein the conductive layer is disposed on the substrate, the conductive layer is a patterned structure, the porous dielectric layer are disposed on the patterned conductive layer, and exposing surface of the substrate portion.
  7. 7.一种电子装置,包括: 第一基板; 透明导电膜,设置于该第一基板上,该透明导电膜包括: 导电层;及多孔性介电层,设置于该导电层上;以及第二基板,平行于该第一基板, 其中该多孔性介电层具有多个空心孔, 其中该导电层的折射率为1.8〜2.1, 其中该多孔性介电层的等效折射率介于1.0至1.76之间。 An electronic device, comprising: a first substrate; a transparent conductive film, disposed on the first substrate, the transparent conductive film comprising: a conductive layer; and a porous dielectric layer disposed on the conductive layer; and a second second substrate, parallel to the first substrate, wherein the porous dielectric layer having a plurality of hollow bore, wherein the refractive index of the conductive layer is 1.8~2.1, wherein the porous dielectric layer, the equivalent refractive index between 1.0 to between 1.76.
  8. 8.如权利要求7所述的电子装置,其中该多孔性介电层的材料为氧化铝。 The electronic device according to claim 7, wherein the material of the porous dielectric layer is alumina.
  9. 9.如权利要求7所述的电子装置,其中该多孔性介电层包括多个团聚块,各团聚块以间隙间隔,其中该些空心孔包含所述多个团聚块之中。 9. The electronic device according to claim 7, wherein the porous dielectric layer comprises a plurality of blocks agglomerates, each agglomerate blocks gap interval, wherein the plurality of apertures comprises a plurality of hollow blocks being agglomerated.
  10. 10.如权利要求9所述的电子装置,其中各团聚块的直径为I〜8微米。 The electronic device according to claim 9, wherein the diameter of each of the blocks is agglomerated I~8 microns.
  11. 11.如权利要求7所述的电子装置,其中该多孔性介电层的厚度为80〜120纳米。 11. The electronic device according to claim 7, wherein said porous dielectric layer having a thickness of 80~120 nm.
  12. 12.如权利要求9所述的电子装置,其中该导电层为屏蔽电极。 12. The electronic device according to claim 9, wherein the conductive layer is a shield electrode.
  13. 13.如权利要求7所述的电子装置,其中该电子装置为触控面板,该导电层为触控感应电极。 13. The electronic device according to claim 7, wherein the electronic device is a touch panel, the touch sensing layer is a conductive electrode.
  14. 14.如权利要求13所述的电子装置,还包括: 另一透明导电膜,设置于该第二基板上,该另一透明导电膜包括: 另一导电层;及另一多孔性介电层,设置于该另一导电层上,其中该另一多孔性介电层具有多个空心孔, 其中该另一导电层为图案化结构,且为触控感应电极,折射率为1.8〜2.1, 其中该另一多孔性介电层的等效折射率介于1.0至1.76之间。 14. The electronic device according to claim 13, further comprising: a transparent conductive film is further disposed on the second substrate, the transparent conductive film further comprising: a further conductive layer; and the other porous dielectric layer disposed on the other conductive layer, wherein the further porous dielectric layer having a plurality of hollow bore, wherein the conductive layer is further patterned structure, and a touch sensing electrodes, a refractive index of 1.8~ 2.1, wherein the porous dielectric layer further equivalent refractive index is between 1.0 to 1.76.
  15. 15.如权利要求7所述的电子装置,其中该电子装置为电子纸显示面板,该电子装置还包括: 电泳结构层,设置于该第一基板及该第二基板之间;以及像素电极膜,设置于该第二基板上,该导电层为参考电极。 And a pixel electrode film; electrophoretic structure layer disposed between the first substrate and the second substrate: The electronic device according to claim 7, wherein the electronic device is an electronic paper display panel, the electronic device further comprises , disposed on the second substrate, the conductive layer is a reference electrode.
  16. 16.一种透明导电膜的制造方法,包括: 提供基板; 形成导电层于该基板上; 形成金属层于该导电层上;以及以该导电层为阳极,阳极氧化该金属层,以形成多孔性介电层, 其中该多孔性介电层具有多个空心孔, 其中该导电层的折射率为1.8〜2.1, 其中该多孔性介电层的等效折射率介于1.0至1.76之间。 16. A method for manufacturing a transparent conductive film, comprising: providing a substrate; forming a conductive layer on the substrate; a metal layer formed on the conductive layer; and an anode with the conductive layer, the metal layer is anodized to form a porous dielectric layer, wherein the porous dielectric layer having a plurality of hollow bore, wherein the refractive index of the conductive layer is 1.8~2.1, wherein the porous dielectric layer, the equivalent refractive index is between 1.0 to 1.76.
  17. 17.如权利要求16所述的透明导电膜的制造方法,其中在提供该金属层的步骤中,该金属层为铝。 17. The method of producing a transparent conductive film according to claim 16, wherein the step of providing the metal layer, the metal layer is aluminum.
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