CN100527331C - Intersection type cathode adjusting structural panel display device and its production technique - Google Patents
Intersection type cathode adjusting structural panel display device and its production technique Download PDFInfo
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- CN100527331C CN100527331C CNB2006100485173A CN200610048517A CN100527331C CN 100527331 C CN100527331 C CN 100527331C CN B2006100485173 A CNB2006100485173 A CN B2006100485173A CN 200610048517 A CN200610048517 A CN 200610048517A CN 100527331 C CN100527331 C CN 100527331C
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Abstract
The invention relates to a plate display in alternative cathode adjusting structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and alternative cathode adjusting structure are arranged on the cathode glass panel. The invention can effectively adjust the ability of field activated electron emission of cathode, to make the cathode emit electrons uniformly and stably and improve the display brightness and light uniformity of whole device, with lower cost and simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in Display Technique field, plane, Electronics Science and Technology field, vacuum science and technical field, integrated circuit science and technology field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor and manufacture craft thereof with intersection type cathode adjusting structural.
Background technology
Display device is a kind of crucial man-machine communication interface, and the human display device of certain form that also always relies on to come into contacts with various instrument equipment.Indicating dial from the fascia, to the high definition screen of high-end notebook PC, in the high speed development process of information technology, these display devices have occupied indispensable status and effect.For the field emission flat-panel display that utilizes carbon nano-tube as cathode material, the height of image quality is one of key technical index of integral display spare making success or not.And realize a large amount of electronics of emission that carbon nanotube cathod can be uniform and stable, this is the precondition that shows good image.Carbon nano-tube has little tip curvature radius, and high aspect rate and excellent conducting performance have caused showing great attention to of numerous scientific research personnel.
When external voltage is applied to the carbon nanotube cathod surface, will form powerful electric field strength on the carbon nano-tube top, force carbon nano-tube to launch a large amount of electronics.Adopting grafting to prepare in the process of carbon nanotube cathod slurry, the influence that is subjected to concrete manufacture craft, production process and makes raw material, the field emission ability of carbon nano-tube has descended many.So how to take effective measure, can allow large-area carbon nanotube cathod realize uniform and stable reliable emitting electrons, this is a realistic problem need solving.
In large-area carbon nanotube cathod, be subjected to the influence of other factors, can not guarantee that each negative electrode all has identical field emission ability, that is to say, the electron emissivity of the carbon nanotube cathod that has is more intense, and the electron emissivity of the carbon nanotube cathod that has is more weak; Like this, just caused the brightness of its pairing phosphor pixel point to distinguish to some extent, the situation that has also just caused image quality to descend.In this case, just need carry out extra electricity regulation mechanism, expectation allows and applies higher a little voltage on the more weak carbon nanotube cathod of luminosity, launch more electronics, improve the luminosity of this pixel, and make the voltage on the more intense carbon nanotube cathod of luminosity low a little, reduce the luminosity of this pixel.And for the also perfect without comparison solution of problem like that.
In addition, under the prerequisite of the field emission ability that does not influence carbon nanotube cathod as far as possible, also need further to reduce the cost of manufacture of whole flat-panel display device; When can carrying out the making of large area display spare, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, flat-panel monitor with intersection type cathode adjusting structural and manufacture craft thereof simple in structure.
The object of the present invention is achieved like this: a kind of flat-panel monitor with intersection type cathode adjusting structural, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have control grid, carbon nanotube cathod and intersection type cathode adjusting structural on cathode glass faceplate;
The backing material of described intersection type cathode adjusting structural is glass, just cathode glass faceplate; There is a metal level on the cathode glass faceplate, is used for forming respectively source lead layer and drain lead layer after the etching; N type heavy doping silicon layer on the cathode glass faceplate after the etching is divided into two parts, and a part is used to form source electrode, and another part is used to form drain electrode; Source electrode n type heavy doping silicon layer on the cathode glass faceplate to be positioned at the source lead layer above, drain electrode n type heavy doping silicon layer to be positioned at the drain lead layer above; Source electrode on the cathode glass faceplate and drain electrode are not connected; Source electrode and drain electrode all present a kind of trapezoidal shape, and the long limit of trapezoidal shape is positioned at the below and trace layer separately contacts; Prepare a n type doped silicon layer on cathode glass faceplate once more, this n type doped silicon layer will cover source electrode and drain electrode simultaneously; The mid portion of the n type doped silicon layer after the etching will be to lower recess, and sunk part will be positioned at the centre position of source electrode and drain electrode downwards; Silicon dioxide insulating layer of the top existence of n type doped silicon layer, silicon dioxide insulating layer will cover n type doped silicon layer fully; Gate pole metal level of the top existence of silicon dioxide insulating layer forms gate pole after the etching; Silicon dioxide layer of protection of the top existence of gate pole metal level; Silicon dioxide layer of protection will cover the gate pole metal level fully; Dielectric isolation layer, grid and grid cover layer all be positioned at the drain lead layer above; Dielectric isolation layer, grid and grid cover layer be not be positioned at silicon dioxide insulating layer above, but be positioned at the side of silicon dioxide insulating layer, be connected by drain lead layer and drain electrode; On the drain lead layer of carbon nanotube cathod preparation in the electron channel hole.
The fixed position of described intersection type cathode adjusting structural is for being fixed on the cathode glass faceplate, source lead layer and drain lead layer are metal gold, silver, chromium, nickel, molybdenum, aluminium, n type heavy doping silicon layer on the cathode glass faceplate is made one deck or is made multilayer, and the gate pole metal level is metal gold, silver, nickel, chromium, molybdenum, tin, aluminium, indium.
A kind of manufacture craft with flat-panel monitor of intersection type cathode adjusting structural is characterized in that: its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of source lead layer and drain lead layer: evaporation last layer metal on cathode glass faceplate forms source lead layer and drain lead layer respectively after the etching;
3) making of source electrode and drain electrode: on cathode glass faceplate, produce a n type heavy doping silicon layer once more, form source electrode and drain electrode after the etching respectively;
4) making of n type doped silicon layer: on cathode glass faceplate, prepare a n type doped silicon layer once more, form n type doped silicon layer after the etching; This n type doped silicon layer will cover source electrode and drain electrode simultaneously;
5) making of silicon dioxide insulating layer: on n type doped silicon layer, prepare a silicon dioxide insulating layer, form silicon dioxide insulating layer after the etching; Silicon dioxide insulating layer will cover n type doped silicon layer fully;
6) making of gate pole metal level: on silicon dioxide insulating layer, produce the layer of metal layer, form the gate pole metal level after the etching;
7) making of silicon dioxide layer of protection: on the gate pole metal level, produce a silicon dioxide layer of protection, form silicon dioxide layer of protection after the etching; Silicon dioxide layer of protection will cover the gate pole metal level fully;
8) making of dielectric isolation layer: on the drain lead layer, prepare the layer of silicon dioxide layer, form dielectric isolation layer after the etching; Form the electron channel hole in the dielectric isolation layer centre position, expose the drain lead layer of bottom;
9) making of grid: evaporation last layer metal on dielectric isolation layer forms grid after the etching;
10) the tectal making of grid: on grid, produce a silicon dioxide layer once more, form the grid cover layer after the etching;
11) cleaning surfaces of intersection type cathode adjusting structural is handled: clean is carried out on whole cathode glass faceplate surface, remove dust and impurity;
12) preparation of carbon nano-tube: on the drain lead layer of made of carbon nanotubes in the electron channel hole;
13) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
14) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
15) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
16) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
17) device assembling: cathode glass faceplate, anode glass panel, supporting wall structure and glass are enclosed frame be assembled together, and the getter subsidiary component is put in the middle of the cavity, fix with glass powder with low melting point;
18) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially produces a n type heavy doping silicon layer once more on cathode glass faceplate, form source electrode and drain electrode after the etching respectively; N type heavy doping silicon layer can be made one deck, also can make multilayer; N type heavy doping silicon layer after the etching is divided into two parts, and a part is used to form source electrode, and another part is used to form drain electrode; Source electrode n type heavy doping silicon layer to be positioned at the source lead layer above, drain electrode n type heavy doping silicon layer to be positioned at the drain lead layer above; Source electrode and drain electrode are not connected; Source electrode and drain electrode all present a kind of trapezoidal shape, and the long limit of trapezoidal shape is positioned at the below and trace layer separately contacts.
Described step 15 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 16 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 18 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Intersection type cathode adjusting structural at first, in the present invention is to regulate the emission current of carbon nanotube cathod.When after applying appropriate voltage respectively on control grid and the gate pole, will form powerful electric field strength on the carbon nano-tube top, force carbon nano-tube to launch a large amount of electronics.Meanwhile, after applying appropriate voltage on the gate pole, the silicon dioxide insulating layer below gate pole will form conducting channel in n type doped silicon layer; When applying voltage at the raceway groove two ends, will form electric current in the raceway groove, like this, applied voltage is applied on the source electrode, is connected in the drain electrode by conducting channel, just has been applied on the carbon nanotube cathod.Utilize this mode, can control the shape of conducting channel in the n type doped silicon layer, thereby control current of cathode indirectly by controlling the size that gate pole powers on and presses.Excessive when the electric current on a certain pixel, when pixel brightness is too high, can be by reducing operating voltage on the gate pole reduce the to flow through cathode current of carbon nano-tube; Too small when the electric current of a certain pixel, when pixel brightness is low excessively, can increase the cathode current of the carbon nano-tube of flowing through by improving the operating voltage on the gate pole; Thereby regulated the field emission ability of the carbon nanotube cathod under the different pixels point, reached a large amount of electronics of emission of realizing that whole carbon nanotube cathod can be uniform and stable, thereby realized the uniformity and the stability of whole display image.
Secondly, in the intersection type cathode adjusting structural in the present invention, made of carbon nanotubes is connected with drain electrode by the drain lead layer on the drain lead layer, has so just reduced the contact to drain electrode, has avoided the damage of drain electrode, has improved the power that is made into of device;
The 3rd, in the intersection type cathode adjusting structural in the present invention, on gate pole, made a silicon dioxide layer of protection, avoided of the influence of other impurity to gate pole; Similar therewith, on the control grid, also made the gate protection layer, avoided the influence of anode high voltage to grid voltage;
In addition, in the intersection type cathode adjusting structural in the present invention, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of intersection type cathode adjusting structural;
Fig. 2 has provided the transversary schematic diagram of intersection type cathode adjusting structural;
Fig. 3 has provided and has had structural representation intersection type cathode adjusting structural, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has intersection type cathode adjusting structural, comprise by cathode glass faceplate 1, anode glass panel 14 and all around glass enclose the sealed vacuum chamber that frame 20 is constituted; Anode conductive layer 15 and the phosphor powder layer 17 of preparation on anode conductive layer are arranged on anode glass panel 14; Supporting wall structure 19 between anode glass panel and cathode glass faceplate and getter subsidiary component 18.Control grid 11, carbon nanotube cathod 13 and intersection type cathode adjusting structural are arranged on cathode glass faceplate 1.
Described intersection type cathode adjusting structural includes cathode glass faceplate 1, source lead layer 2, drain lead layer 3, source electrode 4, drain electrode 5, n type doped silicon layer 6, silicon dioxide insulating layer 7, gate pole metal level 8, silicon dioxide layer of protection 9, dielectric isolation layer 10, grid 11, grid cover layer 12 parts.
The backing material of described intersection type cathode adjusting structural is a glass, and as soda-lime glass, Pyrex, just cathode glass faceplate 1; There is a metal level on the cathode glass faceplate, is used for forming respectively source lead layer 2 and drain lead layer 3 after the etching; N type heavy doping silicon layer on the cathode glass faceplate after the etching is divided into two parts, and a part is used to form source electrode 4, and another part is used to form drain electrode 5; Source electrode n type heavy doping silicon layer on the cathode glass faceplate to be positioned at the source lead layer above, drain electrode n type heavy doping silicon layer to be positioned at the drain lead layer above; Source electrode on the cathode glass faceplate and drain electrode are not connected; Source electrode and drain electrode all present a kind of trapezoidal shape, and the long limit of trapezoidal shape is positioned at the below and trace layer separately contacts; Prepare a n type doped silicon layer 6 on cathode glass faceplate once more, this n type doped silicon layer will cover source electrode and drain electrode simultaneously; The mid portion of the n type doped silicon layer after the etching will be to lower recess, and sunk part will be positioned at the centre position of source electrode and drain electrode downwards; Silicon dioxide insulating layer 7 of the top existence of n type doped silicon layer, silicon dioxide insulating layer will cover n type doped silicon layer fully; Gate pole metal level 8 of the top existence of silicon dioxide insulating layer forms gate pole after the etching; Silicon dioxide layer of protection 9 of the top existence of gate pole metal level 8; Silicon dioxide layer of protection 9 will cover gate pole metal level 8 fully; Dielectric isolation layer 10, grid 11 and grid cover layer 12 all be positioned at drain lead layer 3 above; Dielectric isolation layer, grid and grid cover layer be not be positioned at silicon dioxide insulating layer above, but be positioned at the side of silicon dioxide insulating layer 7, be connected by drain lead layer and drain electrode; On the drain lead layer 3 of carbon nanotube cathod 13 preparations in the electron channel hole.
The fixed position of described intersection type cathode adjusting structural is for being fixed on the cathode glass faceplate.Source lead layer and drain lead layer can be one of metal gold, silver, chromium, nickel, molybdenum, aluminium.N type heavy doping silicon layer on the cathode glass faceplate can be made one deck, also can make multilayer.The gate pole metal level can be one of metallic gold, silver, nickel, chromium, molybdenum, tin, aluminium, indium.
A kind of manufacture craft with flat-panel monitor of intersection type cathode adjusting structural, its manufacture craft is as follows:
1) making of cathode glass faceplate 1: whole plate glass is carried out scribing,, produce cathode glass faceplate as soda-lime glass, Pyrex;
2) making of source lead layer 2 and drain lead layer 3: evaporation last layer metal on cathode glass faceplate as chromium, forms source lead layer and drain lead layer respectively after the etching;
3) making of source electrode 4 and drain electrode 5: on cathode glass faceplate, produce a n type heavy doping silicon layer once more, form source electrode and drain electrode after the etching respectively;
4) making of n type doped silicon layer 6: on cathode glass faceplate, prepare a n type doped silicon layer once more, form n type doped silicon layer 6 after the etching; This Doped n-type doped silicon layer will cover source electrode and drain electrode simultaneously;
5) making of silicon dioxide insulating layer 7: on n type doped silicon layer, prepare a silicon dioxide insulating layer, form silicon dioxide insulating layer 7 after the etching; Silicon dioxide insulating layer will cover n type doped silicon layer fully;
6) making of gate pole metal level 8: on silicon dioxide insulating layer, produce the layer of metal layer,, form the gate pole metal level after the etching as the molybdenum layer;
7) making of silicon dioxide layer of protection 9: on the gate pole metal level, produce a silicon dioxide layer of protection, form silicon dioxide layer of protection after the etching; Silicon dioxide layer of protection will cover the gate pole metal level fully;
8) making of dielectric isolation layer 10: on the drain lead layer, prepare the layer of silicon dioxide layer, form dielectric isolation layer 10 after the etching; Form the electron channel hole in dielectric isolation layer 10 centre positions, expose the drain lead layer of bottom;
9) making of grid 11: evaporation last layer metal on dielectric isolation layer as nickel, forms grid after the etching;
10) making of grid cover layer 12: on the grid nickel dam, produce a silicon dioxide layer once more, form the grid cover layer after the etching;
11) cleaning surfaces of intersection type cathode adjusting structural is handled: clean is carried out on whole cathode glass faceplate surface, remove dust and impurity;
12) preparation of carbon nano-tube 13: on the drain lead layer of made of carbon nanotubes in the electron channel hole;
13) making of anode glass panel 14: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
14) making of anode conductive layer 15: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
15) making of insulation paste layer 16: at the non-display area printing insulation paste layer of anode conductive layer;
16) making of phosphor powder layer 17: the viewing area printing phosphor powder layer on anode conductive layer;
17) device assembling: cathode glass faceplate, anode glass panel, supporting wall structure 19 and glass are enclosed frame 20 be assembled together, and getter 18 is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
18) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially produces n type heavy doping silicon layer once more on cathode glass faceplate, form source electrode and drain electrode after the etching respectively; N type heavy doping silicon layer can be made one deck, also can make multilayer; N type heavy doping silicon layer after the etching is divided into two parts, and a part is used to form source electrode, and another part is used to form drain electrode; Source electrode n type heavy doping silicon layer to be positioned at the source lead layer above, drain electrode n type heavy doping silicon layer to be positioned at the drain lead layer above; Source electrode and drain electrode are not connected; Source electrode and drain electrode all present a kind of trapezoidal shape, and the long limit of trapezoidal shape is positioned at the below and trace layer separately contacts;
Described step 15 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes;
Described step 16 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes;
The device that described step 18 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (7)
1, a kind of flat-panel monitor with intersection type cathode adjusting structural, comprise by cathode glass faceplate [1], anode glass panel [14] and all around glass enclose the sealed vacuum chamber that frame [20] is constituted; Anode conductive layer [15] and the phosphor powder layer [17] of preparation on anode conductive layer are arranged on anode glass panel [14]; Supporting wall structure between anode glass panel and cathode glass faceplate [19] and getter subsidiary component [18] is characterized in that:
Control grid [11], carbon nanotube cathod [13] and intersection type cathode adjusting structural are arranged on cathode glass faceplate [1];
The backing material of described intersection type cathode adjusting structural is a glass, just cathode glass faceplate [1]; There is a metal level on the cathode glass faceplate, is used for forming respectively source lead layer [2] and drain lead layer [3] after the etching; N type heavy doping silicon layer on the cathode glass faceplate after the etching is divided into two parts, and a part is used to form source electrode [4], and another part is used to form drain electrode [5]; Source electrode n type heavy doping silicon layer on the cathode glass faceplate to be positioned at the source lead layer above, drain electrode n type heavy doping silicon layer to be positioned at the drain lead layer above; Source electrode on the cathode glass faceplate and drain electrode are not connected; Source electrode and drain electrode all present a kind of trapezoidal shape, and the long limit of trapezoidal shape is positioned at the below and trace layer separately contacts; Prepare a n type doped silicon layer [6] on cathode glass faceplate once more, this n type doped silicon layer will cover source electrode and drain electrode simultaneously; The mid portion of the n type doped silicon layer after the etching will be to lower recess, and sunk part will be positioned at the centre position of source electrode and drain electrode downwards; A silicon dioxide insulating layer of the top existence of n type doped silicon layer [7], silicon dioxide insulating layer will cover n type doped silicon layer fully; A gate pole metal level of the top existence of silicon dioxide insulating layer [8] forms gate pole after the etching; A silicon dioxide layer of protection of the top existence of gate pole metal level [8] [9]; Silicon dioxide layer of protection [9] will cover gate pole metal level [8] fully; Dielectric isolation layer [10], grid [11] and grid cover layer [12] all be positioned at drain lead layer [3] above; Dielectric isolation layer, grid and grid cover layer be not be positioned at silicon dioxide insulating layer above, but be positioned at the side of silicon dioxide insulating layer [7], be connected by drain lead layer and drain electrode; On the drain lead layer [3] of carbon nanotube cathod [13] preparation in the electron channel hole.
2, the flat-panel monitor with intersection type cathode adjusting structural according to claim 1, it is characterized in that: the fixed position of described intersection type cathode adjusting structural is for being fixed on the cathode glass faceplate, source lead layer and drain lead layer are one of metal gold, silver, chromium, nickel, molybdenum, aluminium, n type heavy doping silicon layer on the cathode glass faceplate is made one deck or is made multilayer, and the gate pole metal level is one of metal gold, silver, nickel, chromium, molybdenum, tin, aluminium, indium.
3, a kind of manufacture craft with flat-panel monitor of intersection type cathode adjusting structural, it is characterized in that: its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of source lead layer [2] and drain lead layer [3]: evaporation last layer metal on cathode glass faceplate forms source lead layer and drain lead layer respectively after the etching;
3) making of source electrode [4] and drain electrode [5]: on cathode glass faceplate, produce a n type heavy doping silicon layer once more, form source electrode and drain electrode after the etching respectively;
4) making of n type doped silicon layer [6]: on cathode glass faceplate, prepare a n type doped silicon layer once more, form n type doped silicon layer [6] after the etching; This n type doped silicon layer will cover source electrode and drain electrode simultaneously;
5) making of silicon dioxide insulating layer [7]: on n type doped silicon layer, prepare a silicon dioxide insulating layer, form silicon dioxide insulating layer [7] after the etching; Silicon dioxide insulating layer will cover n type doped silicon layer fully;
6) making of gate pole metal level [8]: on silicon dioxide insulating layer, produce the layer of metal layer, form the gate pole metal level after the etching;
7) making of silicon dioxide layer of protection [9]: on the gate pole metal level, produce a silicon dioxide layer of protection, form silicon dioxide layer of protection after the etching; Silicon dioxide layer of protection will cover the gate pole metal level fully;
8) making of dielectric isolation layer [10]: on the drain lead layer, prepare the layer of silicon dioxide layer, form dielectric isolation layer [10] after the etching; Form the electron channel hole in dielectric isolation layer [10] centre position, expose the drain lead layer of bottom;
9) making of grid [11]: evaporation last layer metal on dielectric isolation layer forms grid after the etching;
10) making of grid cover layer [12]: on grid, produce a silicon dioxide layer once more, form the grid cover layer after the etching;
11) cleaning surfaces of intersection type cathode adjusting structural is handled: clean is carried out on whole cathode glass faceplate surface, remove dust and impurity;
12) preparation of carbon nano-tube [13]: on the drain lead layer of made of carbon nanotubes in the electron channel hole;
13) making of anode glass panel [14]: whole plate glass is carried out scribing, produce the anode glass panel;
14) making of anode conductive layer [15]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
15) making of insulation paste layer [16]: at the non-display area printing insulation paste layer of anode conductive layer;
16) making of phosphor powder layer [17]: the viewing area printing phosphor powder layer on anode conductive layer;
17) device assembling: cathode glass faceplate, anode glass panel, supporting wall structure [19] and glass are enclosed frame [20] be assembled together, and getter subsidiary component [18] is put in the middle of the cavity, fix with glass powder with low melting point;
18) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft with flat-panel monitor of intersection type cathode adjusting structural according to claim 3, it is characterized in that: described step 3 is specially produces a n type heavy doping silicon layer once more on cathode glass faceplate, form source electrode and drain electrode after the etching respectively; N type heavy doping silicon layer can be made one deck, also can make multilayer; N type heavy doping silicon layer after the etching is divided into two parts, and a part is used to form source electrode, and another part is used to form drain electrode; Source electrode n type heavy doping silicon layer to be positioned at the source lead layer above, drain electrode n type heavy doping silicon layer to be positioned at the drain lead layer above; Source electrode and drain electrode are not connected; Source electrode and drain electrode all present a kind of trapezoidal shape, and the long limit of trapezoidal shape is positioned at the below and trace layer separately contacts.
5, the manufacture craft with flat-panel monitor of intersection type cathode adjusting structural according to claim 3 is characterized in that: described step 15 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
6, the manufacture craft with flat-panel monitor of intersection type cathode adjusting structural according to claim 3 is characterized in that: described step 16 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
7, the manufacture craft with flat-panel monitor of intersection type cathode adjusting structural according to claim 3 is characterized in that: the device that described step 18 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CNB2006100485173A CN100527331C (en) | 2006-08-02 | 2006-08-02 | Intersection type cathode adjusting structural panel display device and its production technique |
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| CNB2006100485173A CN100527331C (en) | 2006-08-02 | 2006-08-02 | Intersection type cathode adjusting structural panel display device and its production technique |
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| CN100527331C true CN100527331C (en) | 2009-08-12 |
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