l2?736l 九、發明說明： 【發明所屬之技術領域】 本發明係一有關場發射顯示器之結構，係有關一絕緣 ^刼裝置為陰極與陽極之支撐結構，尤其是在該絕緣支撐 骏置可設置一反射層，可有效提昇場發射顯示器發光亮度。 【先前技術】 ^平面顯不器（FPD)種類包括場發射顯示器（fed)、液晶 貝示為（]FT-LCD)、電漿顯示器（PDP)、有機發光二極體顯 ，态（OLED)、液晶投影式顯示器等等，輕、薄是該等平面 ^示器的共同特點，依照各該平面顯示器之不同特質，有 〜可應用於小尺寸面版如手機；有些則可應用於中、大型 尺寸如電腦螢幕、電視螢幕；或應用於超大型尺寸如室外 婁又位式看板。各種平面顯示器技術之發展，均是希望朝向 兼/、兩晝貝、大畫面、並提高使用壽命等特性。 其中所謂的場發射顯示器是近年來新興的平面顯示器 ^ ’其原因在其有自發光的效果，除較LCD能有更佳的 儿度表現外，加上更寬廣的視角，能源消耗低，反應速度 ^操作溫度較廣等特性，且所得影像晝質類似於傳統的 射線官（CRT)，而其體積卻遠較陰極射線管（⑶了）輕、 再加上翁近年所開發的奈米碳管，應用於内，勢必促 進其發展。 種習知之三極場發射顯示器參考第一圖所示la其結 構至v包含阮極構造1〇與陰極構造別於一單元結構％之 中，陽極與陰極之間設置有絕緣支撐裝置（或叩， 5 1277361 提供為衫陽極51a與單元陰極52a間真空區域之間隔， 及作為iW極構造10與陰極構造20之間之支樓，參閱第— 圖所示，、一陽極構造10至少包含一陽極破璃基板u，一陽 極導電層12，~榮光粉體層（Phosphors iayer)13 ;而—陰 極構ie 2至^包含一陰極玻璃基板21，_陰極導電層u， 二電子，射源層23，一介電層24，一閘極層25 ;其;各該 單元内極構造1〇與陰極構造2〇之間隔係由絕緣支撐裝 置15配置，其功能為保持陰極構造與陽極構造之間之真空 區域之維繫，並由陽極導電層12提供之高壓，俾使陰極構 造20上之電子發射源層23產生電子並射向陽極構造1〇上 之榮光粉體層13激發而使螢光粉體發光。據此，為了伏電 子在場發射I員示器中移動，藉由真空設備將顯示器抽真空 至10-7托（t〇rr)，使電子獲得一良好的自由動徑（mean hee path)，同時應避免電子發射源和螢光粉區的汚染及 毋化。另’為使電子有足夠能量去衝擊螢光粉，故在雨板 間需有適當間隙，使電子有足夠的加速度能量來衝擊螢光 粉’達到使螢光粉能充分產生發光效應，所以對維持/良 好的間隙，以使電子來產生一足夠的加速度，讓場發齅介 器獲得發級率。 ^ 然，前述之場發射顯示器係乃以一種低電壓驅動之冷 發螢光粉，陽極使用之電壓多小於5KV以下，遠小於習= 之陰極射線管CRT之陽極高壓至少大於20KV以上，因此# 發射顯示器之陰極電子發射源電子束動能仍為有限，相減 所能激發螢光粉體所產生之亮度亦有限，對此，習妒技备 1277361 亦有許多之對策可參，如，提高電流密度的奈米碳管電子 發射源層，高效率低壓螢光粉的螢光粉體層，或驅動電路 的改善等等，其中一種係以沿用陰極射線管之概念於陽極 設置一反射層14以提昇螢光粉之發光效率。 所謂的反射層方式，參考習知之陰極射線管陰極係以 電子槍與陽極螢光屏間有一相當的距離，以一種習知對角 尺寸為17吋之陰極射線管為例至少200mm以上，因此以習 知之陰極射線管陽極電壓可以20KV以上之高壓，俾使陰極 電子束加速，電子束具有相當高的動能可激發至螢光粉體 層内，而且為提昇螢光粉之發光效率，並提昇螢光屏之發 光均勻性，參閱第七圖所示習知技藝係於玻璃面板80上之 螢光粉體層82表面多蒸鍍一金屬膜反射層84,以反射被螢 光粉體激發之偏向或反向光提昇發光效率，其中該習知技 術之每一色彩單元構造具有黑體陣列區81，且圖中之金屬 光罩83可規範電子束85之發射。不過據此，對場發射顯 示器而言，如前所述，陽極使用之高壓多小於5KV以下’ 且場發射顯示器之陰陽極之間隙則僅數個mm之單位或更 小，因此電子發射源層產生電子束之動能遠小於陰極射線 管之高壓方式之電子動能，因此若依循陰極射線管之陽極 螢光屏於場發射顯示器之陽極螢光粉體層亦設置一反射金 屬膜層，電子束將難以穿透螢光粉體内激發，而且電子易 被螢光粉表層之該反射性金屬膜層吸收，反而降低螢光粉 體層之發光效率。 為此，一種習知技藝，參考臺灣專利公告號289126號， 1277361 參閱第二圖所示之結構，該構造具有陽極玻璃面板91以承 載螢光粉93、陽極導電層95及黑體陣列區94，其中係以 一種可做為陰、陽極間之支撐功能作用之支撐裝置96於臨 陽極螢光粉體層之一侧製作一反射層92以一傾斜角度反射 被激發之螢光粉體發光之背向光或偏向光，且該裝置反射 層並未直接貼附螢光粉層，不會吸收電子束，可提昇亮度， 不過依該發明所提供之技藝，係以曝光顯影製作，並配合 繁複的薄膜製程，製程繁複，設備成本過高，另，如欲製 作一大尺寸如20忖以上之場發射顯示面板，或是欲製作一 厚度達500 //m以上之支撐裝置，更屬不易，因此需尋求更 簡易之實施方式。 近年來，一種新型的絕緣材質的面板形支撐裝置過去 常被導入液晶平面顯示器面板内層間隔之使用，參閱第五 圖所示之結構，該材質膨脹係數與玻璃相近，面板厚度可 為500//m至1500 //m，並可被蝕刻為複數之孔隙42，孔隙 直徑已可滿足目前場發射顯示器之陰陽極單元矩陣配列之 需求，因此亦可被可被考量為場發射顯示器内陰陽極間之 支撐裝置應用。由於場發射顯示器處於一非常低壓的真空 狀態，為防止顯示器中的兩大片面板崩潰，習用之支撐裝 置多以玻璃球或十字型玻璃來支撐，又或以長條狀的支撐 物來支撐。該等支撐裝置需以一固著劑以黏附於陰極或陽 極，因此在製程上係需經過沾附固著劑，然後黏附在陽極 構造或陰極構造上，再經過一燒結製程已完成支撐裝置之 固著，然配合場發射顯示面板之晝面呈現需求，且不致影 1277361 響畫面呈現之效果，因此支撐裝置之規模大都介在50μηι到 200μιιι之間，其外觀尺寸相當微小，因此該結構在製程上便 會有下述複雜度的存在：一.製程繁複：由於習知之支撐裝 置外觀尺寸小，要藉由吸附設備或移載設備佈植支撐裝置 要求精確提高，對位及實施之複雜及困難度提高。二.支撐 裝置沾附固著劑易產生污染：由於習知支撐裝置需藉由沾 漿，才能黏著在面板上，其後必需再經加熱讓沾漿進行固 著，讓面板和支撐裝置完成固定封著，將沾有沾漿支撐裝 置佈植在面板上，造成沾漿對面板形成一污染源，其二為 經高温燒結，在沾漿内的溶劑因而揮發出來，勢必對面板 造成二次污染。所以，若以前述所謂之絕緣圖騰化矩陣孔 隙支撐裝置可輕易解決以上之問題，並可大大減低製程成 本。 發明人乃設計一種絕緣支撐裝置之特色加以改良應 用，並於該絕緣支撐裝置38設置一反射層44，據此，除發 揮該絕緣支撐裝置應用於場發射顯示器上之支撐功能外， 並可提升螢光粉之發光效率，又，該支撐裝置相較於習知 之支撐器實施容易，無須藉以高成本且耗時之佈植設備實 施。 【發明内容】 有鑑於習知場發射顯示器仍僅於5KV以下之低電壓驅 動，對於所激發之螢光粉發光效率有限，為此習知技術乃 設置一反射層以提昇發光效率，然製程過於繁複，難以實 施，又，習知技藝設置之支撐裝置，在製程上實施不易， 1277361 且易造成元件的污染等缺點，發明人乃設置一具反射功能 之絕緣支撐裝置38，具此發明可提昇場發射顯示元件之發 光效率，另，提供一簡易實施安置之支撐裝置，又，該絕 緣支撐裝置亦可於獨立實施製作，俾使製程簡易產品良率 提高。 本發明之主要目的，係提供一種具反射層之絕緣支撐 裝置38，可提升場發射顯示元件之亮度表現。 本發明之又一目的，係提供一具反射層之絕緣支撐裝 置38，可取代習知技藝使用之支撐裝置，使該支撐裝置安 置及實施簡易。 本發明之另一目的，係提供一具反射層之絕緣支撐裝 置38之製作方法，可於獨立加工製作，再設置於場發射顯 示器元件内一並封裝。 本發明之又另一目的’係提供一具反射層之絕緣支撐 裝置之封裝方法，俾使該所謂的絕緣支撐裝置實施於場發 射顯示元件内，不影響氣導路徑，俾使元件真空封裝作業 實施。 本發明之構造包括··陽極構造，具螢光粉體層；陰極 構造，具碳奈米管層；及支撐裝置，位於該陰極構造與該 陽極構造之間，具反射層，係面向該螢光粉體層，以反射 該螢光粉體層所發出之光。 為了使貴審查委員能更進一步暸解本發明之特徵及 技術内容，請參閱以下有關本發明之詳細說明與附圖，然 而所附圖式僅提供參考與說明用，並非用來對本發明加以 10 1277361 限制者，另，其他目的與優點，對於熟諳此技藝者而言， 在參考附圖及後文發明詳述後，亦將變得明暸。 【實施方式】 本發明提供一種具反射層之絕緣支撐裝置38，參考第 五圖所示，該裝置係為一種絕緣材質，與場發射顯示器之 陰極或陽極面板之膨脹係數接近者為佳，以利於該裝置與 陰極面板及陽極面板於真空封裝過程減少因加熱膨脹過程 陰、陽極構造與支撐裝置膨脹差異造成之裂片發生，該絕 緣支撐裝置38上設置有複數之孔隙42，孔隙之設置係對應 於場發射顯示器之陰陽極單元排列，以提供為陰極電子發 射源產生電子束以激發陽極螢光粉體層之通道，該等孔隙 之設置，可以一種蝕刻方式實施製作，該絕緣支撐裝置之 一側製作一反射層44，參閱第四圖所示，反射層呈現鏡面 效果為佳，反射層之材質可以為導電材料，該絕緣支撐裝 置38,於複數孔隙區域外之無效區域43内可製作一對位用 記號，以提供為真空封裝對位，以利陰、陽極單元對應於 該絕緣支撐裝置38内之各該複數孔隙42,該絕緣支撐裝置 38之上下兩面無效區域43面内可設置之一固著劑塗膠區， 以提供塗覆固著劑，以利於真空封裝之燒結過程固著陰極 與陽極面板。 本發明所謂的具反射層之絕緣支撐裝置38之製作方 法，可以一種加工方式進行，選用一已製作好之含複數孔 隙之絕緣支撐裝置38，以蒸鍍或濺鍍方式製作一反射層44 於絕緣支撐裝置38之一侧，以製作為所謂得本發明具反射 1277361 層之絕緣支撐裝置38。 θ. — +發明所謂的具反射層之絕緣支撐裝置38之於場發射 絲貝TpT器之^Λ* λ 〇 U 貝^ 式’該方式有別於習知以佈植方式植入固 ^^支彳牙I隙’本實施方式；一、分別於陰極構造20之 ^子^射源（兔奈米管層）36之一側或陽極構造1〇螢光粉體 增 1 3之一铜制| 衣作—阻隔壁（rib)39，該阻隔壁之設置位置 1 If方、纟巴緣支韓裝置38各該複數孔隙之間，以支撐並隔 以ft極構’且該阻隔壁之設置係以提供一氣導路徑， a 為真工封裝之氣導路徑，避免真空封裝過程，部分 體殘留於陰陽極單it及各該單元對應之絕緣支撐裝 置38之子丨1¾、向 〜嗎鬥’二、於本發明之無效區域43内之固著位 、刀別至覆上有機膠與固著劑，有機膠係為假固定之用， =先固定絕緣支撐裝置38於陰陽板之間，該有機膠將於燒 =過私中氧化移除，固著膠可以為—玻璃膠，可於高溫燒 結過程固著本發明之絕緣支撐裝置38於陰陽極構造間了 :酌本發明絕緣支撐裝置38上設置之對位標示，將陰 極構造2Q、陽極構造10及本發明絕緣支撐裝置38精準 位’其中本發明之絕緣支撐裝置38之反射層一侧係鄰 極，造螢光粉體層之—側，據此，陰陽極構造之各該 極單το與本發明之各該複數孔隙對位，先藉以前却 =機恥進行假固定，或一箝制估工具暫以固定，四、將= 疋後之半成品進行高溫燒結，俾使本發明之絕緣 I 38固著於陰、陽極構造。 牙衣置 為闊述本發明之製作電子發射源層（碳奈米管爲 ㈢」’本 12 1277361 發明以下之應用表述具體實施例； 按，本發明係採用一膨脹係數82χ1(Γ7〜86xl(TV°C之玻 璃材質之支撐裝置，該膨脹係數與本發明實施之陰極玻璃 基板及陽極玻璃基板近似，外型尺寸依場發射顯示元件設 計，於對位參考位置製作複數之對位標示，以使封裝與陰、 陽極構造對位參考之用，該支撐裝置依據陰極構造及陽極 構造上各該單元陣列，以化學触刻孔隙，以縱剖面所示， 至少有參閱第八圖、第九圖，等兩種蝕刻孔隙結構之之裝 置，第八圖所示之支撐裝置至少有第一孔隙直徑101，第二 孔隙直徑102,其中第一孔隙直徑101大於第二孔隙直徑 102，第九圖所示之支撐裝置第三孔隙直徑103，第四孔隙 直徑104，第五孔隙直徑105，其中第三孔隙直徑103或第 五孔隙直徑大於第四孔隙直徑，又第二孔隙直徑與第四孔 隙直徑至少大於陰極單元之電子發射源層（碳奈米管層）之 對角距離為佳，又，反射層之製作位置，以第八圖所示之 支撐裝置則製作於第一孔隙位置之同侧，以第九圖所示 之，則實施於支樓裝置之任一侧均可，反射層之製作係以 一種鋁為基材以蒸鍍實施形成，另一種以鉻為基材以濺鍍 方式實施形成。本發明採用之玻璃支撐裝置厚度約700// m，反射層之厚度可以為80〜500nm，本發明之無孔隙陣列配 置之區域可稱為無效區域43，該無效區域43内可設置一塗 膠區及一固著區，塗膠區内塗佈有一種UV膠為有機膠以做 為假固定之用，一固著區内塗佈一種玻璃膠做為固著膠之 用，實施方式係以藉由參考對位標示將陰極構造，本發明 13 1277361 支撐裝置，陽極構造進行對位，其中本發明之支撐裝置之 反射層一側係鄰接陽極構造之螢光粉一側，陽極構造有螢 光粉體層之一側，設置有一以玻璃膠為材質之複數阻隔壁 厚度可為50//ill至150//m，因做為氣導路徑之用，阻隔壁 之設置避免為連續之隔壁，需為間隔設置，且阻隔壁連接 位置係配置於本發明之支撐裝置之各該孔隙之間，相鄰之 阻隔壁與陰極陽極單元間之區域可以形成未來真空抽氣過 程之氣導路徑，封裝方式係藉UV膠以紫外燈照射進行硬化 以假固定，再以複數之鉗制裝置輔助固定後送入高溫爐中 以560°C進行高溫燒結，俾使本發明之支撐裝置與陰極構造 及陽極構造固著。可參閱第三圖之本發明實施結構。及本 發明之陽極構造10局部示意圖於第六圖中顯示出，其中陽 極玻璃面板31具有螢光粉體層41於陽極導電層32之上， 而阻隔壁39係可適當分佈於該螢光粉體層41之侧面，而 具支撐功能，但並不一定每一螢光粉體層41之侧面皆有設 置該阻隔壁39，且支撐裝置38表面具有反射層44，而陰 極構造20具有介電層33，使得金屬閘極層37位於其上而 能具吸引電子發射功能，且陰極玻璃面板35具有陰極導電 層34，其可用以承載電子發射源36(碳奈米管層）。 在此須敘述本發明之基本構造，其包括：陽極構造， 具螢光粉體層41 ;陰極構造20，具碳奈米管層（即電子發 射源層36);及支撐裝置38，位於該陰極構造20與該陽極 構造10之間，具反射層44，係面向該螢光粉體層41，以 反射該螢光粉體層41所發出之光。 14 1277361 在此詳述本發明之各項細部變化，如其中該陰極構造 20可包含閘極，位於該碳奈米管層與該支撐裝置38之間， 須知場發射顯示裔可為二極式亦可為二極式’如半導體之 封裝形式般，因此閘極亦為本發明必要之變化；又其中該 螢光粉體層13可為網印或喷塗方式所塗佈，可依喷塗液之 性質或製程之方便而選擇；且其中該碳奈米管層亦可為網 印或喷塗方式所塗佈；為求更佳之電子發射性質及塗佈性 質，其中該碳奈米管層係可包含有經改質後之碳奈米管， 具有高電子發射率；且為製程方便，該支撐裝置為板形時 較易製造，因此其中該支撐裝置可具有複數個孔隙，每一 該碳奈米層位於該孔隙中，以發射電子束；且可進一步包 含阻隔壁位於該支撐裝置與該陽極間，而該阻隔壁間形成 氣導路徑連通每一孔隙，使得抽真空製程得以進行；又為 求蒸鍍或濺鍍之材料運用方便，其中該反射層可為鋁膜或 鉻膜；而為求支撐時連接方便，其中該支撙裝置材質可為 玻璃，其膨脹係數為82x10 7到86xl(TV°C ;且為製程方便 其中該陽極構造及陰極構造對支撐裝置封裝時係使用含玻 璃材質之固著膠燒結。 據此發明實施之場發射顯示器，一、具反射層之絕緣 支撐裝置可以獨立實施製作，製程簡易；二、以本發明之 具反射層之絕緣支撐裝置取代習知之支撐元件於場發射顯 示元件内，安裝及製作簡易，無須佈植設備，製作容易性 高，成本低；三、由本發明之實施製作之場射顯示元件， 陽極構造上被激發之螢光粉所產生之偏射及反向光部分可 15 1277361 由本發明之具反射層之絕緣支撐裝置所提供反射層將反射 光再反射，可提升亮度；在此可說亮度之提升為本發明最 大之特徵。 綜上所述，本發明確可達到預期之使用目的，並具新 穎性及進步性，完全符合發明專利申請要件，爰依專利法 提出申請，敬請詳查並賜准本案專利，以保障發明者之權 利。 惟以上所述僅為本發明之較佳可行實施例，非因此即 拘限本發明之專利範圍，故舉凡運用本發明說明書及圖式 内容所為之等效結構變化，均同理皆包含於本發明之範圍 内，合予陳明。 【圖式簡單說明】 第一圖、習知之三極場發射顯示器結構示意圖； 第二圖、習知技藝之支撐裝置示意圖； 第三圖、本發明實施結構示意圖； 第四圖、含反射層之支撐裝置示意圖； 第五圖、絕緣材質的面板形支撐裝置示意圖； 第六圖、本發明之陽極構造局部示意圖； 第七圖、習知技藝之陽極構造局部示意圖； 第八圖、本發明之支撐裝置孔隙結構示意圖；及 第九圖、本發明之另一支樓裝置孔隙結構示意圖。 【主要元件符號說明】 陽極構造 10 陽極玻璃基板 11 陽極導電層 12 螢光粉體層 13 16 1277361 反射層 陰極構造 陰極導電層 介電層 陽極玻璃面板 介電層 陰極玻璃面板 金屬閘極層 阻隔壁 孔隙 反射層 黑體陣列區 金屬光罩 電子束 反射層 黑體陣列區 支撐裝置 第二孔隙直徑 第四孔隙直徑 支撐裝置 15 陰極玻璃基板 21 電子發射源層 23 閘極層 25 陽極導電層 32 陰極導電層 34 電子發射源 36 支撐裝置 38 螢光粉體層 41 無效區域 43 玻璃面板 80 螢光粉體層 82 反射層 84 陽極玻璃面板 91 螢光粉 93 陽極導電層 95 第一孔隙直徑 101 第三孔隙直徑 103 第五孔隙直徑 105 17L2?736l IX. Description of the invention: [Technical field of the invention] The present invention relates to a structure of a field emission display, which relates to a support structure of a cathode and an anode, especially in the insulation support. Setting a reflective layer can effectively improve the brightness of the field emission display. [Prior Art] ^Flat type display (FPD) types include field emission display (fed), liquid crystal display (=FT-LCD), plasma display (PDP), organic light-emitting diode display, state (OLED) , liquid crystal projection display, etc., light and thin are the common features of these flat display devices, according to the different characteristics of each flat display, there are ~ can be applied to small size plates such as mobile phones; some can be applied to medium, Large sizes such as computer screens, TV screens; or for very large sizes such as outdoor 娄 and kanban. The development of various flat panel display technologies is expected to be oriented toward /, two mussels, large screens, and improved service life. The so-called field emission display is a new type of flat panel display in recent years. The reason is that it has a self-luminous effect, in addition to better performance than LCD, plus a wider viewing angle, low energy consumption, and reaction. Speed ^ operating temperature and other characteristics, and the resulting image enamel is similar to the traditional ray (CRT), but its volume is much lighter than the cathode ray tube ((3)), plus the carbon carbon developed by Weng in recent years Management, applied to the inside, is bound to promote its development. The conventional three-pole field emission display refers to the first figure, and its structure to v includes a drain structure 1 and a cathode structure is different from a unit structure %, and an insulating support device is disposed between the anode and the cathode (or 5 1277361 provides a gap between the vacuum region of the shirt anode 51a and the unit cathode 52a, and a branch between the iW pole structure 10 and the cathode structure 20. As shown in the first figure, an anode structure 10 includes at least one anode. a glass substrate u, an anode conductive layer 12, a Phosphors iayer 13; and a cathode structure 2 to include a cathode glass substrate 21, a cathode conductive layer u, two electrons, and a source layer 23 a dielectric layer 24, a gate layer 25; each of the cell inner pole structures 1 〇 and the cathode structure 2 间隔 are arranged by an insulating support device 15 and function to maintain a relationship between the cathode structure and the anode structure The vacuum region is maintained, and the high voltage provided by the anode conductive layer 12 causes the electron emission source layer 23 on the cathode structure 20 to generate electrons and is incident on the anode structure 1 to emit the phosphor powder layer 13 to cause the phosphor powder. Illumination. According to this, in order to volt The sub-field is moved in the field indicator I, and the display is evacuated to 10-7 Torr (t〇rr) by a vacuum device, so that the electron obtains a good mean hee path, and electron emission should be avoided. Pollution and deuteration in the source and phosphor powder areas. In order to make the electrons have enough energy to impact the phosphor powder, it is necessary to have a proper gap between the rain plates so that the electrons have enough acceleration energy to impact the phosphor powder. The phosphor powder can fully produce the luminescence effect, so the sustain/good gap is allowed to generate sufficient acceleration for the electron to obtain the emission rate of the field emitter. ^ However, the aforementioned field emission display system is A cold-emitting phosphor powder driven by a low voltage, the voltage used by the anode is less than 5KV, and the anode high voltage of the CRT of the cathode ray tube is much larger than 20KV or more, so the electron kinetic energy of the cathode electron emission source of the # emission display is still For the limited, the brightness of the fluorescent powder can be limited by the subtraction. For this, there are many countermeasures for the technique of 12737361, such as the carbon nanotube electron emission source for increasing the current density. The fluorescent powder layer of high-efficiency low-pressure phosphor powder, or the improvement of the driving circuit, etc., one of which is to provide a reflective layer 14 on the anode in accordance with the concept of a cathode ray tube to enhance the luminous efficiency of the phosphor powder. In the reflective layer mode, referring to the conventional cathode ray tube cathode, there is a considerable distance between the electron gun and the anode fluorescent screen. For example, a conventional cathode ray tube having a diagonal size of 17 至少 is at least 200 mm or more, so that the cathode is conventional. The anode voltage of the tube can be higher than 20KV, and the cathode electron beam is accelerated. The electron beam has a relatively high kinetic energy to be excited into the phosphor powder layer, and the luminous efficiency of the phosphor powder is improved, and the fluorescent screen is improved. For uniformity of illumination, referring to the conventional technique shown in FIG. 7 , a metal film reflective layer 84 is deposited on the surface of the phosphor powder layer 82 on the glass panel 80 to reflect the deflection or reversal excited by the phosphor powder. Light enhances luminous efficiency, wherein each color unit configuration of the prior art has a black body array region 81, and the metal mask 83 in the figure can regulate the emission of the electron beam 85. However, according to this, for the field emission display, as described above, the high voltage used by the anode is less than 5 kV or less, and the gap between the anode and the cathode of the field emission display is only a few mm units or less, so the electron emission source layer The kinetic energy of generating the electron beam is much smaller than the electron kinetic energy of the high voltage mode of the cathode ray tube. Therefore, if the anode fluorescent screen of the cathode ray tube is disposed on the anode fluorescent powder layer of the field emission display, a reflective metal film layer is also disposed, and the electron beam will be It is difficult to penetrate the phosphor powder to excite, and the electrons are easily absorbed by the reflective metal film layer on the surface of the phosphor powder, which in turn reduces the luminous efficiency of the phosphor powder layer. To this end, a conventional technique is described with reference to Taiwan Patent Publication No. 289126, No. 1,277,361, which is incorporated herein by reference to the structure of the second embodiment, which has an anode glass panel 91 for carrying the phosphor powder 93, the anode conductive layer 95 and the black body array region 94, The reflective layer 92 is formed on one side of the anode phosphor powder layer by a supporting device 96 which can function as a support function between the cathode and the anode to reflect the back of the excited phosphor powder at an oblique angle. To the light or to the light, and the reflective layer of the device is not directly attached to the phosphor layer, and does not absorb the electron beam, which can improve the brightness, but according to the technology provided by the invention, it is produced by exposure and development, and is complicated with Thin film process, complicated process, high equipment cost, and it is not easy to make a large-area field emission display panel of 20 忖 or more, or to make a support device with a thickness of more than 500 //m. Need to find an easier implementation. In recent years, a new type of insulating panel-shaped support device has been used in the past to be introduced into the inner layer of the liquid crystal flat panel display. Referring to the structure shown in the fifth figure, the expansion coefficient of the material is similar to that of the glass, and the thickness of the panel can be 500//. m to 1500 //m, and can be etched into a plurality of pores 42. The pore diameter can meet the requirements of the matrix arrangement of the cathode-anode unit of the current field emission display, and therefore can also be considered as the anode-anode between the field emission display. Support device application. Since the field emission display is in a very low pressure vacuum state, in order to prevent the collapse of the two large panels in the display, the conventional support device is mostly supported by a glass ball or a cross-shaped glass, or supported by a long strip of support. The supporting device needs to be adhered to the cathode or the anode by a fixing agent, so that the fixing agent is adhered to the process, and then adhered to the anode structure or the cathode structure, and the supporting device is completed through a sintering process. Fixing, with the surface of the field emission display panel presenting the demand, and does not affect the effect of the 1277361 loud picture, so the size of the supporting device is mostly between 50μηι and 200μιι, and its appearance size is quite small, so the structure is on the process. There will be the following complexity: 1. The complicated process: due to the small size of the conventional support device, it is necessary to accurately increase the support device by the adsorption device or the transfer device, and the complexity and difficulty of alignment and implementation. improve. 2. Supporting device adheres to the fixing agent and is easy to cause pollution: since the conventional supporting device needs to be adhered to the panel by dipping the slurry, it is necessary to heat the slurry to fix the plate and the supporting device. Sealed, the slurry support device is implanted on the panel, causing the slurry to form a pollution source to the panel, and the second is to be sintered at a high temperature, and the solvent in the slurry is volatilized, which is bound to cause secondary pollution to the panel. Therefore, the above problems can be easily solved by the aforementioned so-called insulated totemization matrix aperture supporting device, and the process cost can be greatly reduced. The inventor has devised a feature of an insulating support device to improve the application, and a reflective layer 44 is disposed on the insulating support device 38, in addition to the support function of the insulating support device applied to the field emission display, and can be improved The luminous efficiency of the phosphor powder, in turn, is easier to implement than conventional support, without the need for costly and time consuming planting equipment. SUMMARY OF THE INVENTION In view of the fact that conventional field emission displays are still driven at a low voltage of only 5 kV or less, the luminous efficiency of the excited phosphor powder is limited. For this reason, a conventional reflective layer is provided to improve the luminous efficiency, and the process is too high. It is complicated and difficult to implement. Moreover, the support device of the conventional art setting is not easy to implement in the process, and it is easy to cause contamination of components. The inventor has provided a reflective support device 38, which can be improved. The field emission display element has luminous efficiency, and further provides a support device for easy implementation, and the insulation support device can also be independently fabricated to improve the yield of the simple product. SUMMARY OF THE INVENTION A primary object of the present invention is to provide an insulating support device 38 having a reflective layer that enhances the brightness performance of a field emission display element. Another object of the present invention is to provide an insulating support device 38 having a reflective layer that can replace the support device used in the prior art to make the support device easy to install and implement. Another object of the present invention is to provide a method of fabricating an insulating support device 38 having a reflective layer that can be fabricated separately and packaged in a field emission display device. Still another object of the present invention is to provide a method of encapsulating an insulating support device with a reflective layer, so that the so-called insulating support device is implemented in a field emission display element, does not affect the air conduction path, and causes the component to be vacuum-packed. Implementation. The structure of the present invention comprises: an anode structure having a phosphor powder layer; a cathode structure having a carbon nanotube layer; and a supporting device between the cathode structure and the anode structure, having a reflective layer facing the firefly a layer of light powder to reflect the light emitted by the phosphor layer. In order to make the present invention more fully understand the features and technical contents of the present invention, the following detailed description of the present invention and the accompanying drawings are provided, but the drawings are only provided for reference and description, and are not intended to be used for the present invention 10 1277361 The other objects and advantages of the invention will become apparent to those skilled in the art in the appended claims. [Embodiment] The present invention provides an insulating support device 38 having a reflective layer. As shown in the fifth figure, the device is an insulating material, and the expansion coefficient of the cathode or anode panel of the field emission display is preferably close to The device and the cathode panel and the anode panel reduce the occurrence of cracks caused by the difference in expansion between the anode and the anode structure and the supporting device during the vacuum expansion process. The insulating support device 38 is provided with a plurality of pores 42, and the arrangement of the pores corresponds to Aligning the anode and cathode units of the field emission display to provide an electron beam for the cathode electron emission source to excite the channel of the anode phosphor powder layer, and the arrangement of the holes can be performed by an etching method, and one of the insulating support devices A reflective layer 44 is formed on the side. As shown in the fourth figure, the reflective layer has a mirror effect. The reflective layer may be made of a conductive material. The insulating support device 38 may be formed in the ineffective region 43 outside the plurality of aperture regions. The alignment mark is used to provide the vacuum package alignment, so that the anode and cathode units correspond to the Each of the plurality of apertures 42 in the supporting device 38, a fixing agent coating region may be disposed in the upper and lower ineffective regions 43 of the insulating supporting device 38 to provide a coating fixing agent for facilitating the sintering process of the vacuum package. Fix the cathode and anode panels. The manufacturing method of the insulating support device 38 with a reflective layer of the present invention can be carried out in a processing manner, and a prepared insulating support device 38 having a plurality of pores is selected, and a reflective layer 44 is formed by evaporation or sputtering. One side of the insulating support device 38 is formed as an so-called insulating support device 38 having a reflective 1273761 layer of the present invention. θ. — + Invented the so-called insulating support device 38 with a reflective layer for the field-emitting silk shell TpT device ^ Λ * λ 〇 U ^ ^ 式 'This method is different from the conventional implanting method ^ ^ The present invention is as follows: 1. One side of the cathode structure 20 (the rabbit nano tube layer) 36 or the anode structure 1 〇 the phosphor powder is increased by 1 3衣衣- rib 39, the position of the barrier wall 1 If, the 纟巴缘支韩装置38 between the plural apertures to support and be separated by the ft pole structure 'and the barrier wall setting To provide a gas guiding path, a is the air conduction path of the real package, to avoid the vacuum packaging process, part of the body remains in the anode and cathode single it and the corresponding insulating support device 38 of the unit 丨13⁄4, In the ineffective area 43 of the present invention, the fixing position, the knife is covered with the organic glue and the fixing agent, and the organic glue is used for the false fixing, and the insulating support device 38 is fixed between the male and female boards. The glue will be oxidized and removed in the burning = over the private, the fixing glue can be - glass glue, which can be fixed in the high temperature sintering process. The insulating support device 38 is disposed between the anode and cathode structures: the alignment structure provided on the insulating support device 38 of the present invention, the cathode structure 2Q, the anode structure 10 and the insulating support device 38 of the present invention are accurately positioned. The side of the reflective layer of the device 38 is adjacent to the side of the phosphor powder layer, and accordingly, each of the poles τ of the anode and cathode structure is aligned with each of the plurality of pores of the present invention. Shame is fixed, or a clamp tool is temporarily fixed. Fourth, the semi-finished product is sintered at a high temperature, so that the insulating I 38 of the present invention is fixed to the anode and cathode structures. The tooth coat is set as the electron-emitting source layer of the present invention (the carbon nanotube is (3)". The present invention is described in the following application examples. According to the present invention, an expansion coefficient of 82χ1 (Γ7~86xl ( The support device of the glass material of TV °C, the expansion coefficient is similar to the cathode glass substrate and the anode glass substrate of the present invention, and the external size is designed according to the field emission display element, and a plurality of alignment marks are formed at the alignment reference position to The package is aligned with the anode and cathode structures. The support device is based on the cathode structure and the anode structure, and the chemically touches the pores, as shown by the longitudinal section, at least referring to the eighth and ninth diagrams. And two devices for etching the pore structure, the supporting device shown in the eighth figure has at least a first pore diameter 101, and a second pore diameter 102, wherein the first pore diameter 101 is larger than the second pore diameter 102, and the ninth figure The support device has a third pore diameter 103, a fourth pore diameter 104, and a fifth pore diameter 105, wherein the third pore diameter 103 or the fifth pore diameter is greater than the fourth pore diameter, Further, the second pore diameter and the fourth pore diameter are at least larger than the diagonal distance of the electron emission source layer (carbon nanotube layer) of the cathode unit, and the position of the reflective layer is produced, and the supporting device shown in FIG. Then, it is formed on the same side of the first pore position, and as shown in the ninth figure, it can be implemented on either side of the branch device, and the reflective layer is formed by vapor deposition on an aluminum substrate, and A chromium substrate is formed by sputtering. The thickness of the glass support device used in the present invention is about 700//m, and the thickness of the reflective layer can be 80 to 500 nm. The area of the non-porous array of the present invention can be called invalid. In the area 43, the inactive area 43 can be provided with a glue application area and a fixing area. The glue area is coated with a UV glue as an organic glue for use as a dummy fixing, and a fixing area is coated with a glass. The glue is used as a fixing glue, and the embodiment is to align the anode structure by the reference structure by reference to the alignment mark, and the anode structure of the support device of the present invention is aligned, wherein the reflective layer side of the support device of the present invention is adjacent to the anode. Fluorescent powder The side and the anode are arranged on one side of the phosphor powder layer, and a plurality of barrier walls made of glass glue are disposed, and the thickness of the barrier wall can be 50//ill to 150/m, which is used as a gas guiding path, and the barrier wall is The arrangement is avoided as a continuous partition wall, and is required to be spaced apart, and the barrier wall connection position is disposed between each of the apertures of the support device of the present invention, and the area between the adjacent barrier wall and the cathode anode unit can form a vacuum evacuation in the future. The air conduction path of the process is encapsulated by UV glue to be fixed by pseudo-fixation, and then fixed by a plurality of clamp devices, and then sent to a high-temperature furnace for high-temperature sintering at 560 ° C to support the support of the present invention. The apparatus is fixed to the cathode structure and the anode structure. Referring to the third embodiment of the present invention, a partial schematic view of the anode structure 10 of the present invention is shown in the sixth diagram, wherein the anode glass panel 31 has a phosphor powder layer 41. On the anode conductive layer 32, the barrier wall 39 may be appropriately distributed on the side of the phosphor powder layer 41 to have a supporting function, but not necessarily on the side of each phosphor powder layer 41. The barrier wall 39 has a reflective layer 44 on the surface of the support device 38, and the cathode structure 20 has a dielectric layer 33 such that the metal gate layer 37 is positioned thereon to attract an electron emission function, and the cathode glass panel 35 has a cathode conductive layer. 34, which can be used to carry an electron emission source 36 (carbon nanotube layer). The basic construction of the present invention is described herein, including: an anode structure having a phosphor powder layer 41; a cathode structure 20 having a carbon nanotube layer (ie, an electron emission source layer 36); and a support device 38 located therein. Between the cathode structure 20 and the anode structure 10, there is a reflective layer 44 facing the phosphor powder layer 41 to reflect the light emitted by the phosphor powder layer 41. 14 1277361 Details of various variations of the present invention, such as wherein the cathode structure 20 can include a gate between the carbon nanotube layer and the support device 38, and the field emission display can be bipolar. It can also be a two-pole type such as a semiconductor package, so the gate is also a necessary change of the invention; and the phosphor powder layer 13 can be applied by screen printing or spraying, and can be sprayed. The nature of the liquid or the convenience of the process is selected; and wherein the carbon nanotube layer can also be coated by screen printing or spraying; for better electron emission properties and coating properties, wherein the carbon nanotube layer The utility model can include the modified carbon nanotube tube, which has high electron emissivity; and is convenient for the process, the support device is easier to manufacture when it is a plate shape, so the support device can have a plurality of pores, each of which a carbon nanolayer is located in the pore to emit an electron beam; and further comprising a barrier wall between the supporting device and the anode, and an air guiding path is formed between the barrier walls to communicate with each of the pores, so that the vacuuming process can be performed; Also for evaporation The material of the sputtering is convenient to use, wherein the reflective layer can be an aluminum film or a chromium film; and the connection is convenient for supporting, wherein the material of the supporting device can be glass, and the expansion coefficient is 82×10 7 to 86×l (TV ° C ; Moreover, the process is convenient for the anode structure and the cathode structure to be packaged by the fixing material containing the glass material when the supporting device is packaged. According to the field emission display of the invention, the insulating support device with the reflective layer can be independently manufactured. The process is simple; second, the insulating support device with reflective layer of the invention replaces the conventional support component in the field emission display component, and is easy to install and manufacture, does not need the planting equipment, has high manufacturing efficiency and low cost; The field-emitting display element produced by the implementation, the polarized light and the reverse light portion generated by the excited phosphor powder on the anode structure can be reflected by the reflective layer provided by the insulating support device of the present invention to reflect the reflected light. Brightness can be improved; here, it can be said that the improvement of brightness is the biggest feature of the invention. In summary, the present invention can achieve the intended use. It is novel and progressive, fully in line with the requirements of the invention patent application, and is filed in accordance with the Patent Law. Please check and grant the patent in this case to protect the rights of the inventor. However, the above is only the present invention. The preferred embodiments are not to be construed as limiting the scope of the invention, and the equivalent structural changes of the present invention and the contents of the drawings are all included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the structure of a conventional three-pole field emission display; FIG. 2 is a schematic view showing a supporting device of the prior art; FIG. 3 is a schematic view showing the structure of the present invention; Schematic diagram of the support device; fifth diagram, schematic view of the panel-shaped support device of the insulating material; sixth diagram, partial schematic view of the anode structure of the present invention; seventh diagram, partial schematic diagram of the anode structure of the prior art; eighth diagram, the present invention Schematic diagram of the pore structure of the support device; and the ninth diagram, a schematic diagram of the pore structure of another branch device of the present invention. [Main component symbol description] Anode structure 10 Anode glass substrate 11 Anode conductive layer 12 Fluorescent powder layer 13 16 1277361 Reflective layer Cathode structure Cathode conductive layer Dielectric layer Anode glass panel Dielectric layer Cathode glass panel Metal gate layer Barrier wall Porous reflection layer black body array region metal mask electron beam reflection layer black body array region support device second pore diameter fourth pore diameter support device 15 cathode glass substrate 21 electron emission source layer 23 gate layer 25 anode conductive layer 32 cathode conductive layer 34 Electron emission source 36 Support device 38 Fluorescent powder layer 41 Invalid area 43 Glass panel 80 Fluorescent powder layer 82 Reflecting layer 84 Anode glass panel 91 Fluorescent powder 93 Anode conductive layer 95 First pore diameter 101 Third pore diameter 103 Fifth pore diameter 105 17