1277996 九、發明說明： 【發明所屬之技術領域】 本餐明係有關於-種場發顯示器（F福仙 =%;FED)具閘極構造之製作技術，尤指—種以碳奈米 b為電子發射源層之場發顯示器製作技術。 【先前技術】 _平面顯示器㈣)種類包括場發射顯示器(fed)、液晶 ^器(TFT-LCD)、錢顯示器（pDp)、有機發光二極體顯 以（OLED)' L影式顯示器料’輕、薄是該等平面 顯示器的共同特點，依照各該平面顯示器之不同特質，有 些可應用於小尺寸面版如手機；有些則可應用於中、大型 尺寸如電腦螢幕、電視螢幕；或制於超大型尺寸如室外 數位式看板。各種平面顯示器技術之發展，均是希望朝向 兼具南晝質、大畫®r、並提高使用壽料特性。 其中所謂的場發射顯示器是近年來新興的平面顯示器 之-’其原因在其有自發光的$文果，除較LCD能有更佳的 亮度表現外，加上更寬廣的視角，能源、;肖耗低，反應速度 快，操作溫度較廣等特性，且所得影像晝質類似於傳統的 陰極射線官(CRT)，而其體積卻遠較陰極射線管(CRT)輕、 薄，再加上將近年所開發的奈米碳管，應用於内，勢必促 進其發展。 一種習知之三極場發射顯示器參考第一圖所示其結構 至少包含陽極構造l〇a與陰極構造2〇a於一單元結構之中， Ϊ277996 $與陰極之·置有絕緣支撐裝置(或spaeem5a，提 極與單元陰極間真空區域之間隔，及作為陽= 極構造20a之間之支樓，為防止顯示器中的兩大 片，板朋 >貝，麥閱第一圖所示，一陽極構造l〇a至少包含 -陽極破璃基板lla，—陽極導電層12a，—螢光粉= (Phosphors layer)13a;而一陰極構造 2〇a 至少 2基板叫，一陰極導電層仏，一電子發射源層Γί 電層24a’ 一閘極層25a;其中各該單元内陽極構造伽 兵陰極構造20a之間隔係由絕緣支樓裝i l5a配置，其功能 為保持陰極構造20a與陽極構造伽之間之真空區域之維 繫’並由陽極導電I 12a提供之高壓，俾使陰極構造20a 上之電子發射源層23a產生電子並射向陽極構造l〇a上之營 光粉體層13a激發而使f光粉體發光。此外，前述所謂之 陰極構造施之陰極導電層仏係、由平行並列之陰極導線配 置而成’閘極層仏亦由平行並列之閘極導線配置而成， ，者導線之配置互成垂直關係，在功能上餘閘極層 =陰㈣極層(含陰極導電層瓜及電子發射源層η)間提 型成電場’由間極汲引電子發射源之電子束， —與陰極電極導線之垂直配置關係，以達成各單 之控，係，以達成動態晝面呈現之目的； 發射顯示器中移動，藉由真空設備將 不%〆th/7托(torr)，使電子獲得-良好的自由動 径（mean free path)，同時庫 染及毒化。另，錢料㈣光粉區的污 有足夠肖b量去衝擊螢光粉， 1277996 兩板間需有適*_，並提供陽極電極層（含陽極導電芦 12a及螢光粉體層13a)-高電壓，俾始於閘缺引出之= 束有足夠的加速度能量來衝擊螢光粉 : 分產生發光效應。 Μ志充 然，結構以習知技藝製作，對於陰極多以一種繁 製程技蟄如薄膜製程以完成_板上之陰至^ 層等^多層製作，製程繁複，尤其對中大型顯示面板= 產性更難於實施，若以-種厚職作技術，雖Μ” 型^寸面板之製作技術，但仍難以克服高解析製術 限制丄此外對於齡結構之切裝置15，對於該等裳= 佈值貫施液仍有技術上之實施瓶頸。 ^年來種新型n緣材質的面板形支撐裝置過去 常被導人液晶平面顯示器面板内層間隔之使用，來閱第五 圖所示之結構，質膨脹係數與朗相近，面板厚度可 為500//m至1500/zm，並可被蝕刻為覆數之孔隙42，孔 P糸直徑已可滿足目W場發射顯示器之陰陽極單元矩陣配列 之需求’因此亦可被可被考量為場發射顯示器内陰陽極間 之支樓裝置應用。由於習用之支樓裝置多以玻璃球或十字 型玻璃來支撐，又或以長條狀的切物來支撐。該等支撐 裝置需以一固著劑以黏附於陰極或陽極，因此在製程上係 需經過沾附固著劑，然後黏附在陽極構造或陰極構造上， 再經過~燒結製程已完成支撐裝置之固著，然配合場發射 顯示面板之晝面呈現需求，且不致影響晝面呈現之效果， 因此支撐裝置之規模大都介在5(^m到2〇〇μπι之間，其外 1277996 觀尺寸相當微小，因此該結構在製程上便會有下述複雜度 的存在··一·製程繁複··由於習知之支撐裝置外觀尺寸小， 要藉由吸附設備或移载設備佈植支撐裝置要求精確提高， 對位及實施之複雜及困難度提高。二支撐裝置沾附固著劑 易產生污染：由於習知支撐I置需藉由沾聚，才能黏著在 面板上，其後必需再 :加熱讓沾漿進行固 …、-今、…N 一 3 艰W低文 II置完成岐封著，將沾有沾鼓撐裝置佈植在面板 么’造成沾漿對面板形成-污染源，其二為經高溫燒結， 汰沾漿内的溶劑因而揮發出來，勢必對面板造二*、、一 所以’右以W述所謂之絕緣圖騰化矩陣孔隙支壯一 σ Μ解決以上之問題’並可大大減低製程成本。Μ置 之，此申請人曾提出—專利纽計係—種絕緣支舞 寸加以改良應用，於該絕緣支撐裝置38設置〜 據此’除發揮n緣支撐裝置應用於場發 于層 :^外，並可提升榮光粉之發光效率…= 於習知之支標器實施容易，無須籍以高成本2 之t植設備實施，據此，發明人乃再利用此 禮u再增設—閘極層以製反射 ^ 稼裝置，昤且义、+、丄 〜閣極支 致外，二处二則述申請人之專利案之支撐與增加亮度之功 ，並結合一簡易及可獨立製作之閘極層；配合 構牛所製作場發射顯示器之陰極結構，心 藝製作陰極置，然該配合設置仍极習知拉 1277996 【發明内容】 有鏗於以習知技藝製作之場發射顯示器之閘極製作方 式仍有缺憾存在仍待克服，且製程僅適用於較複雜製程設 備之閘極製作，因此發明人乃改良具反射層之閘極支樓筆 置，並降低製程設備需求及材料成本，據此對場發射顯示 器之製程做出貢獻。. 、 本餐明之主要目的，係提供一種具反射層及閘極之支 撐裝置，可於一種具反射層之絕緣支撐裝置上以一種簡易 之製作閘極以構成本發明之結構。 壯本發明又一目的，係提供一種具反射層及閘極之支撐 裳置，可獨立製作，對於習知之閘極相比較時，製作成: 低廉且良率高。 _本^明另—目的’係對應本發明之陰極結構與陽極 衣作簡化’且各该結構均可獨立個別製作後，再予以 ’以為-種配合本發明實施之場發射顯示器結構。 ^上述所謂之諸目的，本發明係提供—種具反射 詩^置’於—種具複數透孔之絕緣板之一側以 貫施製作-反射層以對應陽極，於該具複數透 =板之L㈣騰化(如印刷或㈣之方式 :極：以：應陰極該問極層係由圖騰化之㈣ 垂直;Ϊ導:係平仃亚列’與陰極電極層之陰極導線配 對上广:極導線上係配置複數之透孔，各該透孔 板之透孔，以容各該單元之陰極電子束通過以 龟1%極赏光粉體層之對應單元。 1277996 配合本發明具反射層之閘極支撐裝置之場發射顯示器 構造包含·陰極構造，具有阻隔壁(rib)，電子發射源層，陰 極電極層及陰極基板；及陽極構造，具有阻隔壁(rib)，陽極 電極層，具有螢光粉體層及陽極基板；及本發明之具反射 層之閘極支撐裝置；其中該陰極構造具有阻隔壁，位於該1277996 IX. Description of the invention: [Technical field to which the invention pertains] This meal is related to the production technology of a gate structure (F Fuxian=%; FED) with a gate structure, especially a carbon nanotube b A field display display technology for an electron emission source layer. [Prior Art] _Plane display (4)) types include field emission display (fed), liquid crystal device (TFT-LCD), money display (pDp), organic light-emitting diode display (OLED) 'L-shaped display material' Light and thin are the common features of these flat panel displays. According to the different characteristics of each flat panel display, some can be applied to small-sized panels such as mobile phones; some can be applied to medium and large sizes such as computer screens and TV screens; For ultra-large size such as outdoor digital signage. The development of various flat panel display technologies is hoping to have both the southern enamel and the large paintings, and to improve the characteristics of the used materials. Among them, the so-called field emission display is the emerging flat-panel display in recent years - the reason is that it has a self-illuminating $ text, in addition to better brightness performance than LCD, plus a wider viewing angle, energy,; Low absorption, fast response, wide operating temperature, and the resulting image enamel is similar to the traditional cathode ray official (CRT), but its volume is much lighter and thinner than that of a cathode ray tube (CRT). The application of the carbon nanotubes developed in recent years will inevitably promote its development. A conventional three-pole field emission display has a structure including at least an anode structure 10a and a cathode structure 2〇a in a unit structure, and Ϊ277996 $ and a cathode are provided with an insulating support device (or spaeem5a). , the distance between the vacuum region of the electrode and the cathode of the unit, and the branch between the anode and the pole structure 20a, in order to prevent two large pieces in the display, the board is as shown in the first figure, an anode structure L〇a comprises at least an anode glass substrate 11a, an anode conductive layer 12a, a phosphor powder layer (13), and a cathode structure 2〇a at least 2 substrates, a cathode conductive layer, and an electron emission. The source layer Γ electrically layer 24a' a gate layer 25a; wherein the spacing of the anode structure galvanic cathode structure 20a in each unit is configured by an insulating branch assembly i l5a, the function of which is to maintain a relationship between the cathode structure 20a and the anode structure The vacuum region is maintained by the high voltage provided by the anode conduction I 12a, so that the electron emission source layer 23a on the cathode structure 20a generates electrons and is emitted to the camping powder layer 13a on the anode structure 10a to be excited. Light powder illuminates. In addition, The so-called cathode structure is provided with a cathode conductive layer, which is formed by parallel juxtaposed cathode wires. The gate layer is also formed by parallel parallel gate wires, and the wires are arranged in a vertical relationship with each other. Functionally, the remaining gate layer = the negative (four) pole layer (including the cathode conductive layer melon and the electron emission source layer η) is extracted into an electric field 'electron beam from the electron source of the interpole electrode, and the vertical arrangement relationship with the cathode electrode wire In order to achieve the control of each order, to achieve the purpose of dynamic facial display; moving in the display, by vacuum equipment will not be 〆th / 7 torr (torr), so that the electrons get a good free moving path ( Mean free path), at the same time, the library dyes and poisons. In addition, the material (4) in the light powder area has enough amount of b to impact the fluorescent powder, 1277996 between the two plates need to have appropriate * _, and provide the anode electrode layer (including anode Conductive reed 12a and phosphor powder layer 13a) - high voltage, starting from the gate defect = beam has enough acceleration energy to impact the phosphor powder: the luminescence effect is generated. The structure is based on the know-how Production, for the cathode is more than a traditional process For example, the film process is completed to complete the multi-layer production of the yin to the layer of the board, and the process is complicated, especially for the medium and large display panels = the production is more difficult to implement, if the technology is used, the type is thick. The manufacturing technology of the panel, but it is still difficult to overcome the limitation of high-resolution technology. In addition, the cutting device 15 for the age structure still has a technical bottleneck for the application of the same value. The panel-shaped supporting device used to be used to guide the inner layer spacing of the liquid crystal flat panel display panel. Referring to the structure shown in the fifth figure, the coefficient of mass expansion is similar to that of the lang, and the thickness of the panel can be 500//m to 1500/zm, and The aperture 42 is etched into a number of holes, and the diameter of the hole P糸 can meet the requirements of the matrix arrangement of the anode and cathode cells of the target field emission display. Therefore, it can also be considered as a branch device application between the anode and the cathode in the field emission display. . Because the conventional building installations are mostly supported by glass balls or cross-shaped glass, or supported by long strips. The supporting device needs to adhere to the cathode or the anode by a fixing agent, so that the fixing agent is adhered to the process, and then adhered to the anode structure or the cathode structure, and then the supporting device is completed through the sintering process. Fixing, with the surface of the field emission display panel presenting the demand, and does not affect the effect of the surface rendering, so the size of the supporting device is mostly between 5 (^m to 2〇〇μπι, and the outer 1277996 size is quite small Therefore, the structure has the following complexity in the process. 1. The process is complicated. · Due to the small size of the conventional support device, it is required to accurately increase the support device by the adsorption device or the transfer device. The complexity and difficulty of alignment and implementation are improved. The second supporting device is attached to the fixing agent and is easy to cause pollution: since the conventional support I needs to be adhered to the panel by the coagulation, it is necessary to: heat and let the slurry Carrying out solid, -, today, ... N - 3 Difficult W low text II set to complete the 岐 seal, will be stained with a drum support device implanted in the panel? 'Cause the slurry to form a panel - pollution source, the second is high temperature burning The solvent in the slurry is volatilized, which is bound to be made on the panel. Therefore, the right side of the so-called insulating totemization matrix pores can be used to solve the above problems and the process cost can be greatly reduced. In the case of this device, the applicant has proposed that the patented new system is an improved application for the insulating support device, and is disposed in the insulating support device 38. According to this, the n-edge supporting device is applied to the field and is applied to the layer: And can improve the luminous efficiency of glory powder...= It is easy to implement the standard calibrator, and it is not necessary to implement it with high cost 2 planting equipment. According to this, the inventor reuses this ritual and then adds the gate layer. The system of reflection and control, the unit of 昤, 、, 丄 阁 阁 阁 阁 , , , , , , , , 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人 申请人With the cathode structure of the field emission display made by the cow, the heart is made into the cathode, but the matching setting is still very well-known. 1277996 [Inventive content] There is a way to make the gate of the field display display made by the known technology. Still missing The existence still needs to be overcome, and the process is only applicable to the gate fabrication of more complicated process equipment. Therefore, the inventor improved the pen set of the gate branch with the reflective layer, and reduced the requirements of the process equipment and the material cost, and accordingly the field emission display The main purpose of this meal is to provide a support device with a reflective layer and a gate, which can be used to form the gate on an insulating support device with a reflective layer to form the present invention. Another object of the invention is to provide a supporting skirt with a reflective layer and a gate, which can be independently fabricated, and is produced in comparison with a conventional gate, which is low in cost and high in yield. - The purpose of the present invention is to simplify the cathode structure and the anode coating of the present invention, and each of the structures can be independently fabricated separately, and then the structure of the field emission display to which the present invention is implemented. ^ The above-mentioned objects, the present invention provides a reflective poem disposed on one side of an insulating plate having a plurality of through holes for performing a reflective layer to correspond to an anode, and having a plurality of transparent plates L (four) Tenghua (such as printing or (4) way: pole: to: the cathode should be the pole layer is made by totemization (four) vertical; Ϊ conduction: the system is connected to the cathodic electrode layer of the cathodic electrode layer: The plurality of through holes are arranged on the pole wires, and the through holes of the through holes are arranged to allow the cathode electron beams of the unit to pass through the corresponding unit of the turtle powder layer by 1%. 1277996 Cooperating with the reflective layer of the present invention The field emission display structure of the gate support device comprises a cathode structure, a rib, an electron emission source layer, a cathode electrode layer and a cathode substrate; and an anode structure having a barrier rib and an anode electrode layer a powder layer and an anode substrate; and a gate support device having a reflective layer of the present invention; wherein the cathode structure has a barrier wall,
侧相間隔，其阻隔壁之厚度係以為閘極與陰極電極之電場 決定要素，及控·極汲取陰極電子發射源，並以為驅動 電，設計提供f叙參寺，取代f知結構之介電層24 ;其 中陽極構造具有本發明增設之阻隔壁，舶提供與本發明 之具反射層之支稽裝置相<具反射層—側相間隔，以 作為真空過程之氣導路徑。The side phase spacing, the thickness of the barrier wall is determined by the electric field determining elements of the gate and the cathode electrode, and the cathode electron emission source is controlled and controlled, and the driving power is designed, and the design is provided to replace the structure of the structure. The layer 24; wherein the anode structure has the barrier wall of the present invention, is provided to be spaced apart from the side of the reflective layer of the present invention as a gas guiding path for the vacuum process.
為了使 貝番查委員能更進一步瞭解本發明之特徵) 技術内容’請參閱以下有關本發明之詳細說明與附圖^ =圖;僅，考與說明用，並非用來對本發明加:In order to enable the members of the Pampange to better understand the features of the present invention, the technical content is described below with reference to the detailed description of the present invention and the accompanying drawings.
在义參考附他目触優點，對於熟諳此技藝者而言 少 ' 後文發明詳述後，亦將變得明瞭。 【實施方式】 圖干ί::::了種具反射層及閘極之支撐裝置3參考1 圖不其結構至少具複數⑽42之絕較 ^ 陰極板陽極板之卩彳卩冑纟p > ，以1 對應單元内提供雷车夕#私… τ攸仏局陰1¼極ί 如m 動路徑；於該絕緣支撐穿詈3 側汉置反射層44，對雍於妒八衣置3 對應於％發射顯示器之陽極〜侧以) 10 1277996 =極板^發之螢光粉體發光，^添亮度，鄰接反射層 周X置為热效區域’該無效區域係提供為對位及封裝 L於絕緣支樓裳置38之另一側圖騰化製作（印刷、喷塗 2刻寻方式）閘極層（層由導t材料縣），該閘極層 閘極導線46構成，閘極導線上有複數之孔隙 :該孔咏42係對應絕緣支撐裝置38之複數孔隙42， 46係平行配置並觸應之陰極電極轉垂直，請 芩考第三圖所示之示意結構。 配合本發明之場發射顯示器參考第四圖所示其結構至 少包含陽極構造10與陰極構造2G於—單元結構之中，陽 極與陰極之間設置有本發明之狀射層44及_之支撐裝 置3，提供為單元陽極與單元陰極間真空區域之間隔，及作 為陽極構造K)與陰極構造2G之間之支#，—陽極構造ι〇 至少包含一陽極(玻璃)基板n，—陽極導電層12，一螢光 粉體層（phosphors layer)13，-陽極阻隔壁14，阻隔壁係間 隔配置於螢光粉體層13之間；而—陰極構造2() ^包含 -陰極(玻璃)基板2Γ，-陰極導電層22，一電子發射源層 23, 一陰極阻隔壁24,陰極阻隔壁24係間隔配置於電子發 射源層23之間，其中所謂的陰極導線層係由複數之陰極導 線平行配置並與閘極導線46垂直，該等陰極導線之上配置 電子發射源材質，以形成電子發射源層；而本發明之具反 射層44及閘極之支撐裝置3，係以具反射層之一側對應陽 極，以陽極阻隔壁14間隔，該陽極阻隔壁14係對應本發 明之支撐裝置上各該孔隙42之鄰接區域内，以型成:空^ 11 1277996 區域，作為真空過程之氣導路徑，支撐裝置3之另— \ 極層(複數個閘極導線46所構成），係對應陰極，閘極層= · ^極間以陰極阻隔壁24區隔支撐，閘極導線係與陰極^綠 垂直配置’以提供為各單元電子束沒取及控制之用。、7 本發明所謂的具反射層及閘極撐裝置3,係選用^ 子之❺複數孔隙42之絕緣支撐裝置(絕緣玻填板)38，r 瘵鍍或濺鍍方式製作一反射層44於絕緣支撐裝置38之二 側‘於絕緣支撐裝置38之另一侧可以微影製程或網印圖騰 化製作閘極電極層’以製作為所謂得本發明具 ― 極之支撐装置3。 曰甲 % 本發明具反射層及閘極之支撐裝置3之場發射顯示哭 構造製做方式其包含；一、分別於陰極構造2〇之電子發二 源(¼示米管層）36之一側或陽極構造螢光粉體層I]之 一側製作一陰極與陽極阻隔壁(rib)24& 14，該陰極"阻隔壁 24及陽極阻隔壁14設置位置係對應於反射層44及閘 (複數個閘極導線46所構成)各該覆數透孔42之間，以支^ 並隔離陰陽極構造，二、於本發明之邊緣無效區域43(如第 鲁 五圖）内之固著位置分別塗覆上有機膠與固著劑，有機膠(如 UV膠)係為假固定之用，以先固定本發明之具反射層及閘 極之支撐裝置3於陰陽板之間，該有機膠將於燒結過程中 氧化移除，固著膠可以為一玻璃膠，可於高溫燒結過程固 著本發明之支撐裝置3於陰陽極構造1、2間，三、參酌本 發明絕緣支撐裝置38上設置之對位標示，將陰極構造2、 陽極構造1及本發明絕緣支撐裴置3精準對位，據此，陰 12 1277996 位，先陰陽極單元與本發明之各該覆數孔隙42對 暫以固定曰，别处所謂之有機膠進行假固定，或—箝制工具 發明之且反二：定後之半成品進行高溫燒結，俾使本 /、射Μ及閘極之支撐裝置3固著 與陰:極如玻^ 盥降、陽朽媸、皮孤 衣叙數之對位標不，以使封裝 ^域本發明之無透孔陣列配置 及-固著區，塗膠區有該域内可設置-塗膠區 固定之用，-固著區二了膠為有機膠™ 貝施方式係以藉由參考對位標示將陰極、陽:::之用 對位，最後再將陰陽極板封裝接合。 冓&，進盯 本發明之具有反射声夕弓 層11可為網印或喷塗方式所塗佈I中ς中该螢光粉體 23可為網印或噴塗方式所塗佈;其中該電中;=^^ 包含有經改質後之碳奈米管，且㊉嗌射源層23 Τ 該反射構造可具有複數個孔隙4 rι子發射率，且其中 42 t ； 23 造與該陽極間™阻隔壁14 _成;;=: 1277996 一孔隙’該陽極阻隔壁係可以微影製程或網印製成圖騰化 製作；其中該陰極阻隔壁24係提供為閘極層與陰極電極層 之間隙，阻隔壁之厚度係決定電場之規模，據此發明可使 閘極之製作可以厚膜製成程如網印圖騰化印製或蝕刻或喷 塗；其中該反射層可為鋁膜或鉻膜；其中該陽極構造及陰 極構造封裝時可使用含玻璃材質之固著膠燒結；其中該絕 緣玻璃板膨脹係數為1〇_6到ΙΟ-7/t：;其中該陽極阻隔壁之 厚度可為50 //m至1〇〇 ，即可達提供氣導路徑之功效； 其中該陰極阻隔壁之厚度配合本發明使用之高效能低啟始 電壓之奈米碳管電子發射源層，製作厚度可以為如从m至 60//m ’即可配合80v之驅動電壓電路設計之用。其中該 陽極阻隔壁及陰極阻隔壁材質可為玻璃材質，其膨脹係數 可為 82x10-7 到 86xl〇-7/°C。 藉以上之詳細揭示驗證，本發明之優點如下； 一、製作簡易； 二、本發明裝置可適用大量製程需求； 一大大降低製程設備需求及材料成本。 练上所述，本發明確可達到預期之使用目的，並具身 ，性及進步性，完全符合利專㈣請要件，纽專和 ，出申請’敬請詳查並賜准本案專利，以㈣發明者之韦 y惟以上料僅為本發明之触可行實_，非因以 =本發明之專·κ，故舉凡應財發明 =容所為之等效結構變化，均_皆包含於本發明之Ξ 内，以保障發明者之權益，於此陳明。 14 1277996 【圖式簡單說明】 第一圖、為習知場發射顯示器結構示意圖； 第二圖、本發明之具反射層之閘極支撐裝置結構示意圖； 第三圖、本發明之具反射層之閘極支撐裝置結構示意圖； 第四圖、本發明之場發射顯示器示意圖；及 第五圖、習知之支撐裝置結構示意圖。 【车要元件符號說明】 陽極玻璃板 11a 螢光粉體層 13a 陰極構造 20a 陰極導電層 22a 介電層 24a 陽極基板 11 螢光粉體層 13 陰極構造 2 陰極電極層層 22 陰極阻隔壁 24 3 孔隙 42 閘極導線 46In the meaning of reference, the advantages of the subject, and the lesser of those skilled in the art, will become apparent after the detailed description of the invention. [Embodiment] Figure ί:::: A support device with a reflective layer and a gate 3 reference 1 Figure does not have a structure of at least a plurality of (10) 42 ^ ^ 阴极 阴极 & & p gt; , in the corresponding unit, provide the thunder car 夕# private... τ攸仏局阴11⁄4极ί as the m moving path; in the insulating support, the 侧3 side of the Han reflective layer 44, the 雍 妒 衣 衣 衣 3 corresponds to % of the anode of the emission display ~ side to 10) 1277996 = the phosphor of the plate is emitted, the brightness is added, and the adjacent reflection layer is set to the thermal area. The ineffective area is provided as the alignment and package L. The other side of the insulating branch is placed on the other side of the totem production (printing, spraying 2 etch mode) gate layer (layer is guided by the material material county), the gate layer gate conductor 46 is formed, the gate wire has Pores of the plurality: the holes 42 correspond to the plurality of apertures 42 of the insulating support device 38, and the 46 series are arranged in parallel and the cathode electrodes corresponding to the electrodes are turned vertically. Please refer to the schematic structure shown in the third figure. Referring to the fourth embodiment of the present invention, the field emission display has at least an anode structure 10 and a cathode structure 2G in a unit structure, and a support layer 44 and a support device of the present invention are disposed between the anode and the cathode. 3, provided as a gap between the anode region of the unit anode and the cathode region of the unit, and as a branch between the anode structure K) and the cathode structure 2G, the anode structure 〇 includes at least an anode (glass) substrate n, an anode conductive layer 12, a phosphorous layer 13, an anode blocking wall 14, the barrier wall is disposed between the phosphor powder layers 13; and - the cathode structure 2 () ^ comprises a cathode (glass) substrate 2, a cathode conductive layer 22, an electron emission source layer 23, a cathode barrier wall 24, and a cathode barrier wall 24 are disposed between the electron emission source layers 23, wherein the so-called cathode wiring layer is parallelized by a plurality of cathode wires Arranging and perpendicular to the gate wire 46, the electron emission source material is disposed on the cathode wire to form an electron emission source layer; and the reflective layer 44 and the gate supporting device 3 of the present invention are provided with a reflective layer. One side The anodes are spaced apart by an anode barrier wall 14 corresponding to each of the adjacent regions of the apertures 42 of the support device of the present invention to form an air: 11 1277996 region as a gas guiding path for the vacuum process, supporting The other layer of device 3 is composed of a plurality of gate conductors (composed of a plurality of gate conductors 46), corresponding to the cathode, and the gate layer = ^ ^ is supported by the cathode barrier wall 24, and the gate conductor is vertically arranged with the cathode 'To provide for the unit's electron beam is not taken and controlled. The so-called reflective layer and gate support device 3 of the present invention is formed by using an insulating support device (insulating glass filler plate) 38 of a plurality of apertures 42 of the present invention, and a reflective layer 44 is formed by r 瘵 plating or sputtering. The two sides of the insulating support device 38 are formed on the other side of the insulating support device 38 by a lithography process or a screen printing to form a gate electrode layer to form a so-called support device 3 of the present invention.曰甲% The field emission display of the support device 3 with reflective layer and gate of the present invention shows that the crying structure is composed of one way; one of the two electron sources (1⁄4 meter tube layer) 36 respectively in the cathode structure One side of the side or anode structure phosphor layer I] is formed with a cathode and anode barrier rib 24 & 14, the cathode " barrier wall 24 and anode barrier wall 14 are disposed at positions corresponding to the reflective layer 44 and the gate (the plurality of gate wires 46 are formed) between the plurality of through-holes 42 to separate the cathode-anode structure, and the fixing in the edge-ineffective region 43 (such as the fifth map) of the present invention The position is respectively coated with an organic glue and a fixing agent, and the organic glue (such as UV glue) is used for the pseudo fixing, so as to fix the supporting device 3 with the reflective layer and the gate of the invention between the yin and yang plates, the organic The glue is oxidized and removed during the sintering process, and the fixing glue can be a glass glue. The support device 3 of the present invention can be fixed in the high-temperature sintering process between the anode and cathode structures 1, 2, and the insulating support device 38 of the present invention is considered. The alignment mark provided on the cathode structure 2, the anode structure 1 and the insulation of the present invention The truss 3 is accurately aligned, according to which, the yin 12 1277996 position, the yin anode unit and the cover aperture 42 of the present invention are temporarily fixed, the so-called organic glue is pseudo-fixed elsewhere, or the clamp tool is invented. And the second: the fixed semi-finished product is sintered at a high temperature, so that the support device 3 of the present/, the sputum and the gate is fixed and yin: the pair is as high as the glass, the 盥, the 媸, the 孤The position mark is not, so that the package is not provided with the through-hole array configuration and the fixing area of the present invention, and the glue-coated area is provided for fixing the glue-coated area in the field, and the fixing area is the organic glue. The Besch method is to align the cathode, anode::: by reference to the alignment mark, and finally to bond the cathode and cathode plates.冓&, the reflective yoke layer 11 of the present invention may be screen-printed or spray-coated. The phosphor powder 23 may be screen-printed or spray-coated; In the electricity; =^^ contains the modified carbon nanotubes, and the tenth emitter layer 23 Τ the reflective structure can have a plurality of pores 4 rι emittance, and wherein 42 t ; 23 and the anode Inter-TM barrier wall 14 _ ing;; =: 1277996 A pore 'The anode barrier wall can be made into a totem process by lithography or screen printing; wherein the cathode barrier wall 24 is provided as a gate layer and a cathode electrode layer The gap and the thickness of the barrier wall determine the size of the electric field. According to the invention, the gate can be made into a thick film process such as screen printing totem printing or etching or spraying; wherein the reflective layer can be aluminum film or chromium. Membrane; wherein the anode structure and the cathode structure package may be sintered by using a glass-containing fixing glue; wherein the insulating glass plate has a coefficient of expansion of 1〇_6 to ΙΟ-7/t:; wherein the thickness of the anode barrier wall is 50 / m to 1 〇〇, to achieve the effect of providing a gas guiding path; wherein the cathode blocking wall The thickness of the present invention with the use of high-performance carbon nanotube electron emission source layer low starting voltage, such a thickness may be from m to 60 // m 'of the driving voltage to 80v complex circuit design purposes. The anode barrier wall and the cathode barrier wall may be made of glass and have an expansion coefficient of 82x10-7 to 86xl〇-7/°C. The advantages of the present invention are as follows: 1. Simple fabrication; 2. The device of the present invention can be applied to a large number of process requirements; and the process equipment requirements and material costs are greatly reduced. In practice, the present invention can achieve the intended purpose of use, and is self-contained, sexual and progressive, fully in line with the special (4) requirements, new and special applications, please check and grant the patent in this case, (4) The inventor's Wei y only the above materials are only feasible according to the invention _, non-independent = the special κ of the present invention, so the equivalent structural changes of the versatile financial invention = 容 are included in this Within the scope of the invention, to protect the rights and interests of the inventors, Chen Ming. 14 1277996 [Simplified description of the drawings] The first figure is a schematic diagram of a conventional field emission display structure; the second figure is a schematic structural view of a gate supporting device with a reflective layer of the present invention; The third figure, the reflective layer of the present invention Schematic diagram of the structure of the gate support device; fourth diagram, schematic diagram of the field emission display of the present invention; and fifth diagram, schematic diagram of the structure of the conventional support device. [Description of Vehicle Elements] Anode Glass Plate 11a Fluorescent Powder Layer 13a Cathode Structure 20a Cathode Conductive Layer 22a Dielectric Layer 24a Anode Substrate 11 Fluorescent Powder Layer 13 Cathode Structure 2 Cathode Electrode Layer 22 Cathodic Barrier Wall 24 3 Pore 42 gate wire 46
陽極構造 l〇a 陽極導電層 12a 絕緣支撐裝置 15a 陰極玻璃板 21a 電子發射源層 23a 閘極層 25a 陽極構造 1 陽極電極層 12 陽極阻隔壁 14 陰極基板 21 電子發射源層 23 具反射層及閘極之支撐裝置 絕緣支撐裝置 38 反射層 44 15Anode structure l〇a anode conductive layer 12a insulating support device 15a cathode glass plate 21a electron emission source layer 23a gate layer 25a anode structure 1 anode electrode layer 12 anode barrier wall 14 cathode substrate 21 electron emission source layer 23 with reflective layer and gate Pole support device insulation support device 38 reflective layer 44 15