CN1355548A - Microelectronic vacuum luminous element with efficient dual-surface field emission cathode - Google Patents
Microelectronic vacuum luminous element with efficient dual-surface field emission cathode Download PDFInfo
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- CN1355548A CN1355548A CN 00133684 CN00133684A CN1355548A CN 1355548 A CN1355548 A CN 1355548A CN 00133684 CN00133684 CN 00133684 CN 00133684 A CN00133684 A CN 00133684A CN 1355548 A CN1355548 A CN 1355548A
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- negative electrode
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Abstract
A novel high-efficient microelectronic luminous device is composed of two paralel fluorescent screens and a cathode emitting electrode from both surface and between two fluorescent screens. It can be used as light source with advantages of high efficiency and low cost, or as flat display with advantages of low voltage, high efficiency and high safety.
Description
The invention belongs to the microelectronic vacuum field-transmitting cathode, particularly luminescent devices such as microelectronic vacuum field emission light source and flat-panel monitor.
The evacuated display tube that uses all uses single face cathode emission at present.Double-sided display will be used two evacuated display tubes if desired.So in the occasion that needs the two sides to show, it is very huge that display unit is done, the also corresponding complexity of structure.
The present invention seeks to propose a kind of new structure of microelectronic vacuum dual-surface field emission cathode.
Main feature of the present invention is to comprise two parallel phosphor screens as anode, and the negative electrode of one or two surface launching electronics is arranged between phosphor screen, is vacuum state in the described phosphor screen.The present invention has cathode construction in two, and a kind of is the negative electrode of double-sided deposition electron emission film, and another kind is two-sided silicon tip array cathode.
This new structure can be used for devices such as light source and flat-panel monitor, be used for light source and be it have concurrently the low cost of incandescent lamp and fluorescent lamp high efficiency, have low-voltage, safe and reliable advantage, can improve lighting angle, economical with materials, energy savings again; Be used for flat-panel monitor and have low-voltage, high efficiency, safe and reliable advantage, can improve luminous power, economical with materials, energy savings again.Improve about 2 times of the luminous power of light source and flat-panel monitor, reduced the volume and weight of luminescent device, eliminated thermal losses.
Fig. 1 is the luminescent device schematic diagram, and negative electrode is the silicon tip negative electrode.
1 is cathode leg among the figure, the 2nd, and cathodic field emission silicon tip array, the 3rd, phosphor screen, the 4th, getter, the 5th, cathode leg.
Fig. 2 is the luminescent device schematic diagram, and negative electrode is a film cathode.
21 is cathode legs among the figure, the 22nd, and cathodic field emission silicon tip array, the 23rd, phosphor screen, the 24th, getter, the 25th, cathode leg.
The operation principle of novel field emission light-emitting device is: anode phase target applies positive voltage, forms accelerating field at cathode surface, and the cathode emission electronics makes the luminous demonstration of low-voltage phosphor.Novel evacuated microelectronics dual-surface field emission cathode is used to from the electronics of FEA luminous by the phosphor screen of its front of preassigned pattern bombardment, because can deposit film or erode away the silicon tip array at the tow sides of same silicon chip, will produce field emission when generating positive and negative voltage is added on phosphor screen and the silicon chip under the situation in high vacuum, double than single face feds luminous power.
The primary structure of novel two-sided field-transmitting cathode has two kinds of structures, and a kind of is two-sided silicon tip array cathode, and two-sided emission silicon tip awl array thickness is silicon wafer thickness.Between negative electrode and the anode insulating barrier is arranged, thickness of insulating layer is generally 2-25 μ m.Low-voltage fluorescence as anode shields two, two parallel placements of phosphor screen, and negative electrode is placed between the phosphor screen, and distance is 2-30 μ m between negative electrode and the anode.
Another kind of is that double-side electronic is launched film cathode, its size and two-sided silicon tip array cathode size basically identical.The two-side film membrane cathode thickness can be by several dusts to tens micron according to material property; Low-voltage fluorescence as anode shields two, two parallel placements of phosphor screen, and distance is 2-30 μ m between negative electrode and the anode.
Claims (6)
1. a dual-surface field emission cathode microelectronic vacuum luminous element is characterized in that comprising two parallel phosphor screens as anode, and the negative electrode of one or two surface launching electronics is arranged between phosphor screen, is vacuum state in the described phosphor screen.
2. by the described luminescent device of claim 1, it is characterized in that described negative electrode is the negative electrode of double-sided deposition electron emission film.
3. by the described luminescent device of claim 1, it is characterized in that described negative electrode is two-sided silicon tip array.
4. by the described luminescent device of claim 1, it is characterized in that anode is two low-voltage fluorescence screens.
5. by the described luminescent device of claim 1, it is characterized in that an insulating barrier is arranged between negative electrode and the anode, the thickness of insulating barrier is 2-25 μ m.
6. by the described luminescent device of claim 1, it is characterized in that the distance between described anode and the negative electrode is 2-30 μ m.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 00133684 CN1355548A (en) | 2000-12-01 | 2000-12-01 | Microelectronic vacuum luminous element with efficient dual-surface field emission cathode |
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CN 00133684 CN1355548A (en) | 2000-12-01 | 2000-12-01 | Microelectronic vacuum luminous element with efficient dual-surface field emission cathode |
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CN1355548A true CN1355548A (en) | 2002-06-26 |
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CN 00133684 Pending CN1355548A (en) | 2000-12-01 | 2000-12-01 | Microelectronic vacuum luminous element with efficient dual-surface field emission cathode |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100395865C (en) * | 2004-12-28 | 2008-06-18 | 财团法人工业技术研究院 | Composite baseplate capable of lighting at two sides |
CN100405524C (en) * | 2004-06-02 | 2008-07-23 | 清华大学 | Double faced field emission display |
US7638935B2 (en) | 2004-07-22 | 2009-12-29 | Tsinghua University | Field emission cathode and light source apparatus using same |
CN1674193B (en) * | 2004-03-25 | 2011-03-23 | 日本普瑞伦有限责任公司 | Lighting device |
CN103972025A (en) * | 2013-01-29 | 2014-08-06 | 海洋王照明科技股份有限公司 | Field emission light source |
-
2000
- 2000-12-01 CN CN 00133684 patent/CN1355548A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1674193B (en) * | 2004-03-25 | 2011-03-23 | 日本普瑞伦有限责任公司 | Lighting device |
CN100405524C (en) * | 2004-06-02 | 2008-07-23 | 清华大学 | Double faced field emission display |
US7449825B2 (en) | 2004-06-02 | 2008-11-11 | Tsinghua University | Double-faced field emission display device |
US7638935B2 (en) | 2004-07-22 | 2009-12-29 | Tsinghua University | Field emission cathode and light source apparatus using same |
CN100395865C (en) * | 2004-12-28 | 2008-06-18 | 财团法人工业技术研究院 | Composite baseplate capable of lighting at two sides |
CN103972025A (en) * | 2013-01-29 | 2014-08-06 | 海洋王照明科技股份有限公司 | Field emission light source |
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