CN103972025A - Field emission light source - Google Patents
Field emission light source Download PDFInfo
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- CN103972025A CN103972025A CN201310034219.9A CN201310034219A CN103972025A CN 103972025 A CN103972025 A CN 103972025A CN 201310034219 A CN201310034219 A CN 201310034219A CN 103972025 A CN103972025 A CN 103972025A
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- anode
- light source
- cathode
- field emission
- negative electrode
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Abstract
The invention discloses a field emission light source. The field emission light source comprises a cathode plate, two anode plates and an isolator rack. The cathode plate comprises a cathode emitter structure, the cathode emitter structure comprises a plurality of electron emission layers distributed in an array mode, and the surfaces of the electron emission layers are provided with annular protrusions. The two anode plates are symmetrically arranged on the two sides of the cathode plate. The cathode plate and the two anode plates are fixed to the inner wall of the isolator rack in a matching mode. The isolator rack, the cathode plate and the two anode plates form a closed structure. The field emission light source is simple in structure and high in practicality. In addition, the bombardment area of electron beams emitted by the electron emission layers is equal to that of electron beams emitted by existing electron emission layers of plane types, and the work stability of the field emission light source is improved.
Description
Technical field
The present invention relates to a kind of light source, relate in particular to a kind of field emission light source.
Background technology
A kind of green energy conservation lighting source of field emission light source, its principle is to utilize the electron emission layer on negative electrode flat board to launch electron beam, and under the effect of electric field, the luminescent layer on beam bombardment excitation anode flat board and send uniform visible ray.
In some special light sources application scenarios, as stop-light, wall indicator light, need to show by this field emission light source double-side, to reach two-sided considerable object.But existing field emission light source mostly is one side luminescence display, conventionally two existing field emission light source rightabouts need to be arranged to the object showing to reach light source double-side.But this device needs two cover drive systems to make above-mentioned two field emission light sources luminous, complex circuit, poor reliability, and cost is high, is unfavorable for actual applying.
The electron emission layer of the negative electrode flat board of existing field emission light source, normally adopts fritter film to be covered in the two sides of glass substrate with array format.But in emission process on the scene, can only bombard the anode light layer suitable with this fritter film size from the electron beam of this fritter film surface Vertical Launch, thereby lighting area is less, cause not formed dark space by the anode light layer of beam bombardment, being applied to lighting field has limitation.
When the electron emission layer of the negative electrode flat board of described field emission light source, while adopting large-area film nano material to be coated on the two sides of glass substrate, in emission process on the scene, the resistance of film nano material itself, and contact resistance between this film nano material and glass substrate all can increase.In the time that electric current passes through above-mentioned resistance, the joule's heat energy of generation is larger, and thermal accumlation increases the possibility of damaging this negative electrode flat board, and then affects the stability of field emission light source work.
Summary of the invention
Technical problem to be solved by this invention is, provides one to show by simple realization double-side, and the higher field emission light source of light extraction efficiency.
In order to solve the problems of the technologies described above, embodiments of the invention provide a kind of field emission light source, comprise negative electrode flat board, two anode flat plate and slider frame, described negative electrode flat board comprises cathode emission body structure, described cathode emission body structure comprises multiple electron emission layers that array distributes that are, the surface of described electron emission layer is projection ringwise, two described anode flat plate are symmetrically set in respectively the dull and stereotyped both sides of described negative electrode, dull and stereotyped and two the equal adaptations of described anode flat plate of described negative electrode are fixed on the inwall of described slider frame, described slider frame and described negative electrode flat board and two described anode flat plate form enclosed constructions.
Wherein, described cathode emission structure also comprises the spacer with the through hole that multiple array arranges, and insert one to one the support portion in described through hole, described support portion comprises the first side and the second side that are oppositely arranged, the first side of described support portion is projection ringwise, and described electron emission layer is covered on the first side of described support portion.
Wherein, described electron emission layer is the nano wire film that grows in the first side of described support portion.
Wherein, the material of described electron emission layer is carbon nano-tube film, and the material of described support portion is stainless steel, and the material of described spacer is pottery.
Wherein, the thickness of described spacer is 1mm, and the diameter of described through hole is 2mm, and the spacing of adjacent described through hole is 2mm.
Wherein, described negative electrode flat board comprises cathode base, two cathode conductive layers and two described cathode emission body structures, two described cathode conductive layers are covered in respectively two surfaces of described cathode base, the described spacer of two described cathode emission body structures fits in respectively the surface of described cathode conductive layer, and the second side of the described support portion of two described cathode emission body structures fixedly fits in respectively on described cathode conductive layer.
Wherein, the second side of described support portion is through bonding the fitting on described cathode conductive layer of silver slurry.
Wherein, described anode flat plate comprises anode light layer, anode conductive layer and anode substrate successively, described anode conductive layer is covered in the inwall of described anode substrate, described anode light layer is covered in the surface of described anode conductive layer, and the coating of two described anode flat plate is identical and sequentially dull and stereotyped symmetrical about described negative electrode.
Wherein, described slider frame and described negative electrode flat board and two enclosed constructions that described anode flat plate forms, the vacuum degree of described enclosed construction is 1 × 10
-5pa.
To sum up, the field emission light source of the embodiment of the present invention comprises the two-sided described negative electrode flat board that all contains described electron emission layer, and two as fluoroscopic described anode flat plate.Described negative electrode flat board is located between two described anode flat plate, thus by the bombardment of described electron emission layer divergent bundle respectively corresponding described anode light layer realize the object of light source double-sided display.Described field emission light source is simple in structure, practical.Separately, the embodiment of the present invention adopts the described support portion on annular protrusion surface, when in its surface coverage upper film nano material as described electron emission layer, the electron beam of vertical annular convex surfaces transmitting bombards described anode light layer with certain dispersion angle, and the bombardment area in field and the described electron emission layer of existing plane form are equally large.And the described electron emission layer of small size can reduce the resistance of itself, and the resistance of described electron emission layer and described cathode base, thereby the joule's heat energy when reducing electric current and flowing through above-mentioned resistance has increased the stability of described field emission light source work.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the field emission light source that provides of the embodiment of the present invention;
Fig. 2 is the structural representation of the negative electrode flat board that provides of the embodiment of the present invention;
Fig. 3 is the schematic diagram of another angle of the negative electrode flat board shown in Fig. 2.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Below with reference to accompanying drawing, embodiments of the invention are described.Referring to Fig. 1, for a kind of field emission light source 100 providing in the present invention, comprise negative electrode flat board 10, anode flat plate 20a, 20b and slider frame 30.Described anode flat plate 20a, 20b is symmetrically set in respectively dull and stereotyped 10 both sides of described negative electrode, described negative electrode dull and stereotyped 10 and described anode flat plate 20a, the equal adaptation of 20b is fixed on the inwall of described slider frame 30, described slider frame 30 and described negative electrode dull and stereotyped 10 and described anode flat plate 20a, 20b forms enclosed construction.
Referring to Fig. 2 and Fig. 3, described negative electrode flat board 10 comprises cathode emission body structure 13a, described cathode emission body structure 13a comprises multiple electron emission layer 131a that array distributes that are, the surface of described electron emission layer 131a is projection ringwise, described cathode emission structure 13a also comprises the spacer 133a of the through hole (not indicating in figure) that has multiple array and arrange, and inserts one to one the support portion 132a in described through hole.Described support portion 132a comprises the first side and the second side that are oppositely arranged, the surface that the first side of described support portion 132a is annular protrusion, and described electron emission layer 131a is covered in the first side of described support portion 132a.
In present embodiment, the material of described spacer 133a is pottery.Conventionally adopting the physico-chemical processes such as cutting, polishing is to process and make described via-hole array on 1mm, the length of side pottery that is 10cm at thickness, the diameter of described through hole is preferably 2mm, the spacing of adjacent described through hole is preferably 2mm, then carry out ultrasonic cleaning and do drying and processing, to obtain described spacer 133a.In other embodiments, described spacer 133a can be other insulation materials, as boron nitride ceramics, and simple glass.
In present embodiment, the material of described support portion 132a is stainless steel.Concrete, described support portion 132a is column.Conventionally adopt the outer ring diameter 10mm of patterning method processing, interior ring diameter 5mm, projecting height 3mm, stainless steel column, it is carried out to polishing, ultrasonic cleaning oven dry, to obtain described support portion 132a.In other embodiments, described support portion 132a also can be simple glass, and then metal-coated films conductive layer on described this simple glass adopts the method for silk screen printing to apply one deck nano wire film on described metallic film conductive layer.
In present embodiment, described electron emission layer 131a is the nano wire film that grows in the first side of described support portion 132a.Concrete, described nano wire film can be carbon nano-tube film or other nano thin-films.Conventionally adopt thermal chemical vapor deposition (CVD) method on described stainless steel column, to grow described carbon nano-tube film to obtain described electron emission layer 131a.
Described negative electrode flat board 10 comprises cathode base 11, cathode conductive layer 12a, 12b, described cathode emission body structure 13a, and with the identical cathode emission body structure of described cathode emission body structure 13a structure 13b.Described cathode emission body structure 13b comprises spacer 133b, support portion 132b and electron emission layer 131b.
Described cathode conductive layer 12a, 12b is covered in respectively two surfaces of described cathode base 11.Conventionally select a thick 3mm, the described cathode base 11 that the length of side is 10cm, after its ultrasonic cleaning drying, adopts magnetron sputtering method at cathode conductive layer 12a described in described cathode base 11 plated surfaces, 12b.
Described spacer 133a also fits in the surface of described cathode conductive layer 12a, and described spacer 133b fits in the surface of described cathode conductive layer 12b.It is upper that the second side of described support portion 132a fixedly fits in described cathode conductive layer 12a, and the second side of described support portion 132b fixedly fits on described cathode conductive layer 12b.In present embodiment, described the second side fits in described cathode conductive layer 12a through the bonding correspondence respectively of silver slurry, on 12b.Described spacer 133a, 133b is used for reducing described support portion 132a, 132b and described cathode conductive layer 12a, the electric field influence between 12b.In other embodiments, described silver-colored slurry can adopt other metallic conduction glue to replace.
Refer to Fig. 1, described anode flat plate 20a comprises anode light layer 21a, anode conductive layer 22a and anode substrate 23a successively.Described anode conductive layer 22a is covered in the inwall of described anode substrate 23a, and described anode light layer 21a is covered in the surface of described anode conductive layer 22a.Described anode flat plate 20b comprises anode light layer 21b, anode conductive layer 22b and anode substrate 23b successively, and the structure of described anode flat plate 20b is identical with described anode flat plate 20a with coating, and order is about dull and stereotyped 10 symmetries of described negative electrode.Conventionally select a thick 3mm, the described anode substrate 23a that the length of side is 10cm, 23b, to its ultrasonic cleaning oven dry.After use anode substrate 23a described in magnetron sputtering method, described anode conductive layer 22a, 22b are plated respectively in the surface of 23b.Then use silk screen print method at described anode conductive layer 22a, on 22b, apply respectively described anode light layer 21a, 21b.In the present embodiment, described anode light layer 21a, 21b is phosphor powder layer.
Described slider frame 30 and described negative electrode dull and stereotyped 10 and two described anode flat plate 20a, the enclosed construction that 20b forms, the vacuum degree of described enclosed construction is 1 × 10
-5pa.In present embodiment, described negative electrode dull and stereotyped 10 and described anode flat plate 20a, 20b is all cuboid bulk, and described slider frame 30 is cuboid bulk.Described slider frame 30 is thick 2cm, length 10cm, and the ceramic wafer of height 2cm, the inwall of described slider frame 30 is offered multiple grooves 31.Described negative electrode dull and stereotyped 10 and described anode flat plate 20a, 20b is arranged in parallel, to increase the luminous efficiency of described field emission light source 100.Described negative electrode dull and stereotyped 10 and described anode flat plate 20a, the equal adaptation of end face of 20b is embedded in described groove 31, reaches better firm effect.Described slider frame 30 is located at described negative electrode dull and stereotyped 10 and described anode flat plate 20a, and the surrounding of 20b, with by described slider frame 30 and described negative electrode dull and stereotyped 10 and two described anode flat plate 20a, the enclosed construction that 20b forms.In other embodiments, described negative electrode dull and stereotyped 10 and described anode flat plate 20a, 20b can be other irregular set-up modes, also can be the inwall that adopts other modes to be fixed on described slider frame 30, as bonding, is threaded.
The principle of the field emission light source 100 described in the embodiment of the present invention is: when applying a positive voltage at described anode conductive layer 22a, 22b, by after described cathode conductive layer 12a, 12b ground connection, electron beam can be launched in the annular protrusion surface of described electron emission layer 131a, 131b, the vertical annular convex surfaces of described electron beam is also disperseed transmitting, bombards described anode light layer 21a, 21b with certain dispersion angle.
To sum up, the embodiment of the present invention, in order to realize light source double-sided display, provides a kind of field emission light source 100.Described field emission light source 100 comprises the two-sided described negative electrode flat board 10 that all contains described electron emission layer 131a, 131b, and two as fluoroscopic described anode flat plate 20a, 20b, described negative electrode flat board 10 is located between two described anode flat plate 20a, 20b, bombard corresponding described anode light layer 21a, 21b respectively by described electron emission layer 131a, 131b electron emission, thereby realize the object of light source double-sided display.
The present invention adopts the support portion 132a on annular protrusion surface, 132b, when in its surface coverage upper film nano material as electron emission layer 131a, 131b, the electron beam of vertical annular convex surfaces transmitting bombards described anode light layer 21a with certain dispersion angle, 21b, the electron emission layer 131a of the area in bombardment field and existing plane form, 131b is equally large, and the described electron emission layer 131a of small size, 131b can reduce the resistance of itself, and described electron emission layer 131a, the resistance of 131b and described cathode base 11, joule's heat energy when thereby minimizing electric current flows through above-mentioned resistance, increase the stability that described field emission light source 100 is worked.
Above-described execution mode, does not form the restriction to this technical scheme protection range.The amendment done within any spirit at above-mentioned execution mode and principle, be equal to and replace and improvement etc., within all should being included in the protection range of this technical scheme.
Claims (9)
1. a field emission light source, it is characterized in that, comprise negative electrode flat board, two anode flat plate and slider frame, described negative electrode flat board comprises cathode emission body structure, described cathode emission body structure comprises multiple electron emission layers that array distributes that are, the surface of described electron emission layer is projection ringwise, two described anode flat plate are symmetrically set in respectively the dull and stereotyped both sides of described negative electrode, dull and stereotyped and two the equal adaptations of described anode flat plate of described negative electrode are fixed on the inwall of described slider frame, described slider frame and described negative electrode flat board and two described anode flat plate form enclosed constructions.
2. a kind of field emission light source as claimed in claim 1, it is characterized in that, described cathode emission structure also comprises the spacer with the through hole that multiple array arranges, and insert one to one the support portion in described through hole, described support portion comprises the first side and the second side that are oppositely arranged, the first side of described support portion is projection ringwise, and described electron emission layer is covered on the first side of described support portion.
3. a kind of field emission light source as claimed in claim 2, is characterized in that, described electron emission layer is the nano wire film that grows in the first side of described support portion.
4. a kind of field emission light source as claimed in claim 3, is characterized in that, the material of described electron emission layer is carbon nano-tube film, and the material of described support portion is stainless steel, and the material of described spacer is pottery.
5. a kind of field emission light source as claimed in claim 2, is characterized in that, the thickness of described spacer is 1mm, and the diameter of described through hole is 2mm, and the spacing of adjacent described through hole is 2mm.
6. a kind of field emission light source as claimed in claim 2, it is characterized in that, described negative electrode flat board comprises cathode base, two cathode conductive layers and two described cathode emission body structures, two described cathode conductive layers are covered in respectively two surfaces of described cathode base, the described spacer of two described cathode emission body structures fits in respectively the surface of described cathode conductive layer, and the second side of the described support portion of two described cathode emission body structures fixedly fits in respectively on described cathode conductive layer.
7. a kind of field emission light source as claimed in claim 6, is characterized in that, the second side of described support portion is through bonding the fitting on described cathode conductive layer of silver slurry.
8. a kind of field emission light source as claimed in claim 1, it is characterized in that, described anode flat plate comprises anode light layer, anode conductive layer and anode substrate successively, described anode conductive layer is covered in the inwall of described anode substrate, described anode light layer is covered in the surface of described anode conductive layer, and the coating of two described anode flat plate is identical and sequentially dull and stereotyped symmetrical about described negative electrode.
9. a kind of field emission light source as claimed in claim 1, described slider frame and described negative electrode flat board and two enclosed constructions that described anode flat plate forms, the vacuum degree of described enclosed construction is 1 × 10
-5pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310034219.9A CN103972025A (en) | 2013-01-29 | 2013-01-29 | Field emission light source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310034219.9A CN103972025A (en) | 2013-01-29 | 2013-01-29 | Field emission light source |
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| CN103972025A true CN103972025A (en) | 2014-08-06 |
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Citations (7)
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|---|---|---|---|---|
| CN1355548A (en) * | 2000-12-01 | 2002-06-26 | 中国科学院电子学研究所 | Microelectronic vacuum luminous element with efficient dual-surface field emission cathode |
| CN1705070A (en) * | 2004-06-02 | 2005-12-07 | 清华大学 | Double faced field emission display |
| CN1728329A (en) * | 2004-07-30 | 2006-02-01 | 清华大学 | Light source equipment |
| CN1770352A (en) * | 2004-11-05 | 2006-05-10 | 清华大学 | Field emission device and field emission display equipped with the same |
| CN101042971A (en) * | 2006-03-24 | 2007-09-26 | 清华大学 | Field emission double faced displaying light source and method of making same |
| JP2009016281A (en) * | 2007-07-09 | 2009-01-22 | Asahi Kasei Corp | Field-emission type electron emission device |
| CN101740279A (en) * | 2008-11-21 | 2010-06-16 | 大同股份有限公司 | Field-emissive cathode board and manufacturing method thereof |
-
2013
- 2013-01-29 CN CN201310034219.9A patent/CN103972025A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355548A (en) * | 2000-12-01 | 2002-06-26 | 中国科学院电子学研究所 | Microelectronic vacuum luminous element with efficient dual-surface field emission cathode |
| CN1705070A (en) * | 2004-06-02 | 2005-12-07 | 清华大学 | Double faced field emission display |
| CN1728329A (en) * | 2004-07-30 | 2006-02-01 | 清华大学 | Light source equipment |
| CN1770352A (en) * | 2004-11-05 | 2006-05-10 | 清华大学 | Field emission device and field emission display equipped with the same |
| CN101042971A (en) * | 2006-03-24 | 2007-09-26 | 清华大学 | Field emission double faced displaying light source and method of making same |
| JP2009016281A (en) * | 2007-07-09 | 2009-01-22 | Asahi Kasei Corp | Field-emission type electron emission device |
| CN101740279A (en) * | 2008-11-21 | 2010-06-16 | 大同股份有限公司 | Field-emissive cathode board and manufacturing method thereof |
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Application publication date: 20140806 |